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1. 发明授权

US5466847A Process for preparing hexamethylcyclotrisilazane 失效
标题翻译：制备六甲基环三硅氮烷的方法
公开(公告)号：US5466847A
公开(公告)日：1995-11-14
申请号：US330948
申请日：1994-10-28
申请人： Toshio Shinohara , Akio Yokoo , Muneo Kudo , Motoaki Iwabuchi , Kazuyuki Matsumura
发明人： Toshio Shinohara , Akio Yokoo , Muneo Kudo , Motoaki Iwabuchi , Kazuyuki Matsumura
IPC分类号： C07B61/00 , C07F7/21 , C07F7/10
CPC分类号： C07F7/21
摘要： A process for preparing hexamethylcyclo-trisilazane by heating octamethylcyclotetra-silazane in the presence of a catalyst such as a Lewis acid or a sulfur compound of the following formula ##STR1## wherein M represents Ca, Mg, Al, Fe or NH.sub.4, R represents OH, a phenyl group or a substituted phenyl group, x is 0, 1 or 2 and y is 0, 1, 2 or 3 provided that x and y are not zero at the same time, and z is 0, 1, 2 or 3.
摘要翻译：在催化剂如路易斯酸或下式的硫化合物的存在下加热八甲基环四硅氮烷来制备六甲基环三硅氮烷的方法R表示OH，苯基或取代的苯基，x为0 ，1或2，y为0,1,2或3，条件是x和y不同时为零，z为0,1,2或3。

2. 发明授权

US5136073A Thexyl trialkoxy silane 失效
标题翻译： THEXYL TRIALKOXY SILANE
公开(公告)号：US5136073A
公开(公告)日：1992-08-04
申请号：US796360
申请日：1991-11-22
申请人： Toshio Shinohara , Muneo Kudo , Motoaki Iwabuchi
发明人： Toshio Shinohara , Muneo Kudo , Motoaki Iwabuchi
IPC分类号： C07F7/18
CPC分类号： C07F7/1836
摘要： Several thexyl trialkoxy silanes as a novel class of organosilicon compounds were synthesized by the reaction of dehydrochlorination condensation between thexyl trichlorosilane and an alcohol, e.g., methyl, ethyl, isopropyl and isobutyl alcohols, and characterized by the analytical data. These compounds are useful as an intermediate in the synthetic preparation of other organosilicon compounds, starting material of various silicones, surface-treatment agent of inorganic materials and additive in complex catalysts.

3. 发明授权

US5136072A Thexyl C.sub.1 -C.sub.4 alkyl dialkoxy silane 失效
标题翻译： THEXYL C1-C4ALKYL DIALKOXY SILANE
公开(公告)号：US5136072A
公开(公告)日：1992-08-04
申请号：US798515
申请日：1991-11-26
申请人： Toshio Shinohara , Motoaki Iwabuchi
发明人： Toshio Shinohara , Motoaki Iwabuchi
IPC分类号： C07F7/18 , C08F4/602
CPC分类号： C07F7/184
摘要： Thexyl (C.sub.1 -C.sub.4) alkyl dialkoxy silanes are proposed as a class of novel organosilicon compounds such as thexyl methyl dimethoxy silane and thexyl n-butyl dimethoxy silane. These silane compounds can be synthesized by several different routes. For example, thexyl methyl dimethoxy silane is prepared starting from methyl phenyl chlorosilane which is subjected to the hydrosilation reaction with 2,3-dimethyl-2-butene to introduce a thexyl group and the compound is converted by the reaction with hydrogen chloride into thexyl methyl dichlorosilane which is methoxylated by the reaction with methyl alcohol.

4. 发明授权

US5194627A N-tert-butyldialkylsilylmaleimide and its manufacture 失效
标题翻译： N-叔丁基二甲基硅氧烷和其制造方法
公开(公告)号：US5194627A
公开(公告)日：1993-03-16
申请号：US882899
申请日：1992-05-14
申请人： Toshio Shinohara , Motoaki Iwabuchi
发明人： Toshio Shinohara , Motoaki Iwabuchi
IPC分类号： C07F7/10
CPC分类号： C07F7/10
摘要： An N-tert-butyldialkylsilylmaleimide represented by the following general formula: ##STR1## wherein R's represent C.sub.1 to C.sub.5 alkyl groups which may be the same or different and a method of producing the compound. Said N-tert-butyldialkylsilylmaleimide is useful as a silylating agent, which does not produce hydrogen chloride or the like as a by-product and therefore does not require to use a neutralizing agent additionally. Further this compound is useful as a compound which provides a maleimido group.

5. 发明授权

US5084591A Method for the preparation of cyclopentyl trichlorosilane 失效
标题翻译：环丙基三氯硅烷的制备方法
公开(公告)号：US5084591A
公开(公告)日：1992-01-28
申请号：US710870
申请日：1991-06-06
申请人： Toshio Shinohara , Motoaki Iwabuchi
发明人： Toshio Shinohara , Motoaki Iwabuchi
IPC分类号： B01J27/13 , C07B61/00 , C07F7/12 , C07F7/14
CPC分类号： C07F7/14
摘要： Cyclopentyl trichlorosilane can be efficiently prepared by the hydrosiliaton reaction of trichlorosilane and cyclopentene which can proceed only to a very low extent by the use of conventional platinum catalysts effective in other hydrosilation reactions. Thus, an equimolar mixture of the reactants is heated in the presence of a chlorine-deficient chloroplatinic acid catalyst of a specified chlorine:platinum atomic ratio at a temperature higher than the boiling point of the mixture under normal pressure in a pressurizable vessel so that the desired product can be obtained in a yield of 90% of the theoretical value or higher.

6. 发明申请

US20080290472A1 SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体层间绝缘膜形成组合物，其制备方法，膜形成方法和半导体器件
公开(公告)号：US20080290472A1
公开(公告)日：2008-11-27
申请号：US12029562
申请日：2008-02-12
申请人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Tsutomu Ogihara , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Tsutomu Ogihara , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/58 , C08K3/34 , C08K3/36 , B32B5/18 , H01L21/312
CPC分类号： H01L21/31695 , C08G77/16 , C08G77/70 , C08G77/80 , C08K3/36 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/7682 , H01L2221/1047 , Y10T428/249953 , C08L83/00
摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4 (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.
摘要翻译：本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

7. 发明授权

US08822128B2 Production method of resist composition for lithography 有权
标题翻译：光刻抗蚀剂组合物的制备方法
公开(公告)号：US08822128B2
公开(公告)日：2014-09-02
申请号：US13604270
申请日：2012-09-05
申请人： Motoaki Iwabuchi , Tsutomu Ogihara
发明人： Motoaki Iwabuchi , Tsutomu Ogihara
IPC分类号： G03F7/004 , B01D37/02 , G03F7/075
CPC分类号： G03F7/004 , B01D37/025 , G03F7/075 , G03F7/16
摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译：本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，使胶态溶胶通过过滤器上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。

8. 发明授权

US07485690B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权
标题翻译：牺牲成膜组合物，图案化工艺，牺牲膜和去除方法
公开(公告)号：US07485690B2
公开(公告)日：2009-02-03
申请号：US11148380
申请日：2005-06-09
申请人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
发明人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
IPC分类号： C08G77/08
CPC分类号： G03F7/094 , G03F7/0752 , H01L21/31116 , H01L21/31144 , H01L21/76808
摘要： A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3 (1) RnSiZ4-n (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.
摘要翻译：提供牺牲性成膜组合物，其包含（A）作为具有式（1）和（2）的可水解硅烷的共水解缩合物的硅氧烷树脂：<？在线配方说明=“在线配方” end =“lead”？> XY-SiZ3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula end =“lead”？> RnSiZ4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，例如未取代的羟基或取代或未取代的环氧基，酰氧基或丙烯酰氧基，Y为单键或二价烃基，R为氢或一价烃基，n为0〜3的整数，有机硅树脂为能够通过式（1）中的交联性有机官能团交联反应，（B）交联剂，（C）酸产生剂和（D）有机溶剂进行交联反应。该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

9. 发明授权

US07417104B2 Porous film-forming composition, patterning process, and porous sacrificial film 有权
标题翻译：多孔成膜组合物，图案化工艺和多孔牺牲膜
公开(公告)号：US07417104B2
公开(公告)日：2008-08-26
申请号：US11148371
申请日：2005-06-09
申请人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda
发明人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda
IPC分类号： C08G77/08 , C08L83/04
CPC分类号： C08G77/04 , C08G77/08 , C08G77/14 , C09D183/04 , C09D183/06 , G03F7/0757 , H01L21/02123 , H01L21/02211 , H01L21/02282 , H01L21/0276 , H01L21/31144 , H01L21/3121 , H01L21/76808
摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.
摘要翻译：提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1）其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够通过有机交联基团进行交联反应，和（B）有机溶剂。该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。

10. 发明授权

US07357961B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07357961B2
公开(公告)日：2008-04-15
申请号：US10819544
申请日：2004-04-07
申请人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： C08G77/06 , B05D3/02
CPC分类号： H01L21/3122 , C08G77/04 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.
摘要翻译：本发明提供一种成膜组合物，其可以制造具有高强度和低介电常数的膜，其制造方法，多孔膜形成方法，多孔膜和在内部含有多孔膜的半导体器件。更具体地提供了一种成膜组合物，其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物，其中可水解硅烷化合物选自由式（1））和（2）：<？in-line-formula description =“In-line Formulas”end =“lead”？（R＆lt; 1＆gt;）＆lt; 4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula- 公式描述=“在线公式”end =“lead”？>（R 3）3（R 5）3 -b-Si-R 7 -Si（R 6）3-c（R 4））（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1，R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2，R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数， b和c各自表示1或2的整数。

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