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1. 发明授权

US07947432B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US07947432B2
公开(公告)日：2011-05-24
申请号：US11958661
申请日：2007-12-18
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

2. 发明申请

US20090186484A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20090186484A1
公开(公告)日：2009-07-23
申请号：US12412942
申请日：2009-03-27
申请人： Masayuki ENDO , Masaru Sasago
发明人： Masayuki ENDO , Masaru Sasago
IPC分类号： H01L21/302 , G03F7/20
CPC分类号： G03F7/2043 , G03F7/0045 , G03F7/2041 , Y10S438/948 , Y10S438/949
摘要： After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成由化学放大型抗蚀剂材料制成的抗蚀剂膜之后，通过在抗蚀剂膜上提供包含三苯基锍非酸盐，即酸产生剂的水并循环的水，选择性地照射抗蚀剂膜来进行曝光，并临时存储在解决方案存储中。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，然后用碱性显影剂显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

3. 发明授权

US07541132B2 Chemically amplified resist material, topcoat film material and pattern formation method using the same 有权
标题翻译：化学放大抗蚀剂材料，面漆膜材料和使用其的图案形成方法
公开(公告)号：US07541132B2
公开(公告)日：2009-06-02
申请号：US11968826
申请日：2008-01-03
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/11 , G03F7/2041 , G03F7/38
摘要： A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.
摘要翻译：由包含聚合物的化学放大抗蚀剂材料制成的抗蚀剂膜; 在基材上形成光酸产生剂和氨基甲酰肟。随后，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，烘烤抗蚀剂膜，并且烘烤的抗蚀剂膜被显影，以形成由抗蚀剂膜制成的抗蚀剂图案。

4. 发明申请

US20090011065A1 Dry etching method, fine structure formation method, mold and mold fabrication method 有权
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US20090011065A1
公开(公告)日：2009-01-08
申请号：US11659109
申请日：2006-05-23
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： B23K10/00 , B44C1/22
CPC分类号： C03B11/082 , B81C1/00531 , B81C2201/0143 , C03B11/084 , C03B2215/07 , C03B2215/412 , C04B41/009 , C04B41/5346 , C04B41/91 , C23F4/00 , G02B6/136 , Y02P40/57 , C04B41/0054 , C04B35/56
摘要： A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.
摘要翻译：通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

5. 发明授权

US07470501B2 Pattern formation method through liquid immersion lithography 有权
标题翻译：通过液浸光刻形成图案
公开(公告)号：US07470501B2
公开(公告)日：2008-12-30
申请号：US11203161
申请日：2005-08-15
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C5/00
CPC分类号： G03F7/70341 , G03F7/70733 , G03F7/70866 , Y10S430/146
摘要： An exposure system includes an exposure section provided within a chamber for irradiating a resist film formed on a wafer with exposing light through a mask with an immersion liquid provided on the resist film. It further includes a drying section for drying the surface of the resist film after the irradiation.
摘要翻译：曝光系统包括设置在室内的曝光部分，用于通过设置在抗蚀剂膜上的浸渍液体通过掩模曝光光照射形成在晶片上的抗蚀剂膜。其还包括干燥部分，用于在照射之后干燥抗蚀剂膜的表面。

6. 发明申请

US20080290521A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 失效
标题翻译：成膜组合物，具有低介电常数的绝缘膜，其形成方法和半导体器件
公开(公告)号：US20080290521A1
公开(公告)日：2008-11-27
申请号：US12029569
申请日：2008-02-12
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/31 , B32B3/26 , C04B41/49 , B05D3/02 , H01L23/58
CPC分类号： H01L21/31695 , C08G77/08 , C08L83/04 , C09D183/04 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
摘要翻译：在本发明中，通过水解和缩合由下式表示的硅烷化合物制备的硅溶胶：Si（OR1）4或R2nSi（OR3 )4-n，其中R1，R2（s）和R3（s）可以相同或者在分子中含有多个它们并且在亲水性碱性催化剂存在下各自独立地表示直链或支链C 1-4烷基，并且将疏水性碱性催化剂用于常规多孔膜形成组合物时使用。

7. 发明申请

US20080227038A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20080227038A1
公开(公告)日：2008-09-18
申请号：US12029944
申请日：2008-02-12
申请人： Masayuki ENDO , Masaru SASAGO
发明人： Masayuki ENDO , Masaru SASAGO
IPC分类号： G03F7/30
CPC分类号： G03F7/0035 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.
摘要翻译：在形成下层膜和中间层膜之后，将通过第一图案曝光形成的抗蚀图案与第一抗蚀剂膜和第二图案曝光用第二抗蚀剂膜转印到中间层膜。使用中间层图案作为掩模蚀刻下层膜，以形成下层膜图案。这里，第一和第二抗蚀剂膜是化学放大抗蚀剂膜。第二抗蚀剂膜含有更多量的添加剂，其提高了抗蚀剂的灵敏度或改善了抗蚀剂暴露部分的碱溶性。

8. 发明申请

US20080045005A1 Pattern formation method and method for forming semiconductor device 失效
标题翻译：用于形成半导体器件的图案形成方法和方法
公开(公告)号：US20080045005A1
公开(公告)日：2008-02-21
申请号：US11907018
申请日：2007-10-09
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： H01L21/31 , H01L21/4763
CPC分类号： H01L21/76801 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76802 , H01L21/76813 , H01L21/76817
摘要： A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.
摘要翻译：图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上，将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火，使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

9. 发明授权

US07314703B2 Chemically amplified resist material and pattern formation method using the same 有权
标题翻译：化学放大抗蚀剂材料和使用其的图案形成方法
公开(公告)号：US07314703B2
公开(公告)日：2008-01-01
申请号：US11409207
申请日：2006-04-24
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/492 , G03C1/494 , G03C1/76
CPC分类号： C08L59/00 , C08L2205/02 , G03F7/0392 , G03F7/2041 , Y10S430/106 , C08L2666/16
摘要： In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
摘要翻译：在图案形成方法中，在基板上形成由包含半缩醛或半缩醛的第一聚合物的化学放大抗蚀剂材料制成的抗蚀剂膜。然后，通过设置在抗蚀剂膜上的液体，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。

10. 发明申请

US20070187362A1 Dry etching method, fine structure formation method, mold and mold fabrication method 失效
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US20070187362A1
公开(公告)日：2007-08-16
申请号：US11475190
申请日：2006-06-27
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： C23F4/00 , G02B2006/12166 , G02B2006/12197
摘要： A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.
摘要翻译：通过使用等离子体蚀刻包括钨和碳的物质。等离子体由包括氟原子的气体，包括氮原子的气体和包括烃分子的气体的混合气体产生。

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