会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper
    • (烷氧基) - 硅烷基烯属配体的前体,以沉积铜
    • US5767301A
    • 1998-06-16
    • US786546
    • 1997-01-21
    • Yoshihide SenzakiMasato KobayashiLawrence J. CharneskiTue Nguyen
    • Yoshihide SenzakiMasato KobayashiLawrence J. CharneskiTue Nguyen
    • C07F7/18C23C16/18H01L21/28H01L21/285C07F1/08
    • C23C16/18C07F7/1836C07F7/184C07F7/1844
    • A method is provided for applying chemical vapor deposition (CVD) copper (Cu) to integrated circuit substrates using a Cu(hfac)(ligand) precursor with a silylolefin ligand including combinations of C1-C8 alkyl groups with at least one C2-C8 alkyloxy group. The alkyloxy groups include, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, and aryloxy, while the alkyl groups include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, and aryl. The oxygen atoms of the alkyloxy groups, and the long carbon chains of both the alkyl and alkyloxy groups, increase the stability of the precursor by contributing electrons to the Cu(hfac) complex. The improved bond helps insure that the ligand separates from the (hfac)Cu complex at consistent temperatures when Cu is to be deposited. Combinations of alkyloxy and alkyl groups allow the molecular weight of the precursor to be manipulated so that the volatility of the precursor is adjustable for specific process scenarios. Other embodiments provide a precursor blend made from additional silylolefins, hexafluoroacetylacetone (H-hfac), H-hfac dihydrate, and water, either separately, or in combinations, to enhance deposition rate, conductivity, and precursor stability. A Cu precursor compound including silylolefin ligands having at least one alkyloxy group is also provided. Combinations of ethyl groups with ethoxy groups are specifically disclosed.
    • 提供了一种用于使用Cu(hfac)(配体)前体将金属化学气相沉积(CVD)铜(Cu)施加到集成电路衬底的方法,所述Cu(hfac)(配体)前体具有含有C 1 -C 8烷基与至少一个C 2 -C 8烷氧基 组。 烷氧基包括乙氧基,丙氧基,丁氧基,戊氧基,己氧基,庚氧基,辛氧基和芳氧基,而烷基包括甲基,乙基,丙基,丁基,戊基,己基,庚基,辛基和芳基。 烷基氧基和烷基和烷氧基的长碳链的氧原子通过向Cu(hfac)络合物贡献电子而增加前体的稳定性。 当Cu沉积时,改进的键有助于确保配体在恒定温度下与(hfac)Cu络合物分离。 烷氧基和烷基的组合允许操纵前体的分子量,使得前体的挥发性对于具体的工艺情况是可调节的。 其他实施方案提供由另外的水溶性烯烃,六氟乙酰丙酮(H-hfac),H-hfac二水合物和水分别或组合地制备的前体共混物,以增强沉积速率,导电性和前体稳定性。 还提供了包含具有至少一个烷氧基的硅单元配体的Cu前体化合物。 具体公开乙基与乙氧基的组合。