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1. 发明授权

US08652267B2 Coated-type silicon-containing film stripping process 有权
标题翻译：涂层式含硅膜剥离工艺
公开(公告)号：US08652267B2
公开(公告)日：2014-02-18
申请号：US12591115
申请日：2009-11-09
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Shozo Shirai
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Shozo Shirai
IPC分类号： B08B3/00
CPC分类号： G03F7/423 , G03F7/0752 , G03F7/11 , G03F7/425
摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).
摘要翻译：公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂覆型含硅膜至少包括：第一用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。

2. 发明授权

US08501386B2 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process 有权
标题翻译：含硅成膜组合物，含硅膜基板和图案化工艺
公开(公告)号：US08501386B2
公开(公告)日：2013-08-06
申请号：US13205262
申请日：2011-08-08
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Koji Hasegawa
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Koji Hasegawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/40
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/091 , G03F7/11
摘要： A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.
摘要翻译：一种用于形成用于光刻的多层抗蚀剂工艺中的含硅膜的热固性含硅膜形成组合物，该组合物至少包括：（A）通过水解缩合得到的含硅化合物可水解硅化合物和选自可水解硅化合物和反应性化合物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价或两价或更多价的有机酸; 和（D）有机溶剂。

3. 发明申请

US20100086872A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process 有权
标题翻译：含有金属氧化物的成膜组合物，含金属氧化物的成膜基板和图案化工艺
公开(公告)号：US20100086872A1
公开(公告)日：2010-04-08
申请号：US12461726
申请日：2009-08-21
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , C08G77/58 , C09D183/04 , G03F7/0752
摘要： There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multi-layer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.
摘要翻译：公开了一种用于形成在用于光刻的多层抗蚀剂工艺中形成的含金属氧化物的膜的含热固性金属氧化物的成膜组合物，所述含热固性金属氧化物的成膜组合物至少包含：（A ）通过水解性硅化合物和可水解金属化合物的水解缩合获得的含金属氧化物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价，二价或更高级的有机酸; （D）三价或更高级醇; 和（E）有机溶剂。可以在多层抗蚀剂工艺中提供含金属氧化物的成膜组合物，使得由该组合物制成的膜能够形成光致抗蚀剂膜的优异图案，该组合物能够形成含有金属氧化物的膜作为具有优异的耐干蚀刻性的蚀刻掩模，该组合物具有优异的储存稳定性，并且由组合物制成的膜可通过在去除过程中使用的溶液除去; 含金属氧化物的膜形成基板; 和图案形成处理。

4. 发明申请

US20100040580A1 FREEZE-DRIED COMPOSITION OF INACTIVATED VIRUS ENVELOPE WITH MEMBRANE FUSION ACTIVITY 有权
标题翻译：具有膜融合活性的灭活病毒包膜的冷冻干燥组合物
公开(公告)号：US20100040580A1
公开(公告)日：2010-02-18
申请号：US12582115
申请日：2009-10-20
申请人： Takafumi UEDA
发明人： Takafumi UEDA
IPC分类号： A61K35/76 , C12N7/00
CPC分类号： C12N7/00 , A61K9/19 , A61K48/00 , C12N2770/24151
摘要： The objects of the present invention are to provide a freeze-dried composition of an inactivated virus envelop having membrane fusion activity which can be stored at higher temperatures without losing the ability to introduce foreign matters and to provide a method of introducing a foreign matter into a cell with high efficiency.The present invention provides a freeze-dried composition for introducing a foreign matter which comprises an inactivated virus envelope having membrane fusion activity, and at least one stabilizer selected from the group consisting of a protein hydrolysate, leucine, an L-arginine-acid and a polysaccharide, and a method of introducing a foreign matter using the freeze-dried composition containing an inactivated virus envelope.
摘要翻译：本发明的目的是提供具有膜融合活性的灭活病毒包封的冷冻干燥组合物，其可以在更高温度下储存而不会失去引入异物的能力，并提供将异物引入到电池效率高。本发明提供一种用于引入异物的冷冻干燥组合物，其包含具有膜融合活性的灭活病毒包膜和至少一种选自蛋白质水解物，亮氨酸，L-精氨酸和多糖，以及使用含有灭活病毒包膜的冷冻干燥组合物引入异物的方法。

5. 发明授权

US06210855B1 Positive resist composition suitable for lift-off technique and pattern forming method 有权
公开(公告)号：US06210855B1
公开(公告)日：2001-04-03
申请号：US09459876
申请日：1999-12-14
申请人： Takafumi Ueda , Hideto Kato , Toshihiko Fujii , Miki Kobayashi
发明人： Takafumi Ueda , Hideto Kato , Toshihiko Fujii , Miki Kobayashi
IPC分类号： G03F7023
CPC分类号： G03F7/0226 , G03F7/0233
摘要： A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.

6. 发明授权

US08852844B2 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process 有权
标题翻译：用于形成含硅膜，含硅膜形成基板和图案化工艺的组合物
公开(公告)号：US08852844B2
公开(公告)日：2014-10-07
申请号：US12461374
申请日：2009-08-10
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
IPC分类号： G03F7/00 , G03F7/004 , C08G77/06
CPC分类号： G03F7/11 , C08G77/14 , C08G77/18 , C08K5/0025 , C08K5/053 , C08K5/092 , C08L83/06 , C09D183/06 , G03F7/0752
摘要： There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.
摘要翻译：公开了一种用于形成含硅膜的热固性组合物，以形成在用于光刻的多层抗蚀剂工艺中形成的含硅膜，其至少包括（A）通过水解和缩合可水解硅化合物获得的含硅化合物使用酸作为催化剂，（B）热交联促进剂（C）具有1〜30个碳原子的一价或二价以上的有机酸，（D）三价以上的醇和（E）有机溶剂。可以提供一种能够在光致抗蚀剂膜中形成良好图案的含硅膜的组合物，可以形成具有良好耐干蚀刻性的蚀刻掩模用含硅膜，可以提供良好的储存稳定性，并且可以用于用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液，其上形成含硅膜的基板，以及形成图案的方法。

7. 发明授权

US08043610B2 Freeze-dried composition of inactivated virus envelope with membrane fusion activity 有权
标题翻译：具有膜融合活性的灭活病毒包膜的冻干组合物
公开(公告)号：US08043610B2
公开(公告)日：2011-10-25
申请号：US12582115
申请日：2009-10-20
申请人： Takafumi Ueda
发明人： Takafumi Ueda
IPC分类号： A61K48/00
CPC分类号： C12N7/00 , A61K9/19 , A61K48/00 , C12N2770/24151
摘要： The objects of the present invention are to provide a freeze-dried composition of an inactivated virus envelop having membrane fusion activity which can be stored at higher temperatures without losing the ability to introduce foreign matters and to provide a method of introducing a foreign matter into a cell with high efficiency.The present invention provides a freeze-dried composition for introducing a foreign matter which comprises an inactivated virus envelope having membrane fusion activity, and at least one stabilizer selected from the group consisting of a protein hydrolysate, leucine, an L-arginine-acid and a polysaccharide, and a method of introducing a foreign matter using the freeze-dried composition containing an inactivated virus envelope.
摘要翻译：本发明的目的是提供具有膜融合活性的灭活病毒包封的冷冻干燥组合物，其可以在更高温度下储存而不会失去引入异物的能力，并提供将异物引入到电池效率高。本发明提供一种用于引入异物的冷冻干燥组合物，其包含具有膜融合活性的灭活病毒包膜和至少一种选自蛋白质水解物，亮氨酸，L-精氨酸和多糖，以及使用含有灭活病毒包膜的冷冻干燥组合物引入异物的方法。

8. 发明授权

US08026038B2 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method 有权
标题翻译：含有金属氧化物的成膜组合物，含金属氧化物的膜，含金属氧化物的含膜基材和图案化方法
公开(公告)号：US08026038B2
公开(公告)日：2011-09-27
申请号：US12275088
申请日：2008-11-20
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Mutsuo Nakashima
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Mutsuo Nakashima
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/11 , G03F7/40
CPC分类号： G03F7/11 , C08G77/56 , C09D183/14 , G03F7/0752 , H01L21/316
摘要： A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.
摘要翻译：含有金属氧化物的膜由热固性组合物形成，该组合物包含（A）通过水解性硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物的化合物，（B）Li的氢氧化物或有机酸盐， Na，K，Rb或Cs，或锍，碘鎓盐或铵化合物，（C）有机酸和（D）有机溶剂。含金属氧化物的膜确保有效的图案形成。

9. 发明授权

US07855043B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method 有权
标题翻译：含硅成膜组合物，含硅膜，含硅膜基材和图案化方法
公开(公告)号：US07855043B2
公开(公告)日：2010-12-21
申请号：US11808100
申请日：2007-06-06
申请人： Tsutomu Ogihara , Takafumi Ueda , Takeshi Asano , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Takafumi Ueda , Takeshi Asano , Motoaki Iwabuchi
IPC分类号： G03F7/038 , G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： C08G77/08 , C08L83/04 , C09D183/04 , G03F7/094 , G03F7/11 , C08L83/00
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
摘要翻译：由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。

10. 发明申请

US20100273110A1 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US20100273110A1
公开(公告)日：2010-10-28
申请号：US12662078
申请日：2010-03-30
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/091 , H01L21/0273
摘要： There is disclosed a patterning process comprises at least (1) a step of forming an organic underlayer film on a substrate and then forming a photoresist pattern on the organic underlayer film, (2) a step of attaching an alkaline solution containing an alkaline substance onto the photoresist pattern and then removing the excess alkaline solution, (3) a step of applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern to form a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns, and (4) a step of removing the uncrosslinked siloxane polymer and the photoresist pattern. There can be provided a patterning process capable of forming a further finer pattern simply and efficiently and with a high practicability applicable to semiconductor manufacturing.
摘要翻译：公开了一种图案化工艺，至少包括（1）在衬底上形成有机下层膜，然后在有机下层膜上形成光致抗蚀剂图案的步骤，（2）将含有碱性物质的碱性溶液附着到光致抗蚀剂图案，然后除去过量的碱性溶液，（3）通过将光致抗蚀剂图案附近的硅氧烷聚合物交联，将通过碱性物质的作用将可交联的硅氧烷聚合物溶液施加到光致抗蚀剂图案上以形成交联部分的步骤，和（4）除去未交联的硅氧烷聚合物和光致抗蚀剂图案的步骤。可以提供能够简单有效地形成更精细图案并且具有适用于半导体制造的高实用性的图案化工艺。

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