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    • 7. 发明授权
    • Differential amplifier circuit having a bias circuit with a differential
amplifier
    • 差分放大器电路具有带差分放大器的偏置电路
    • US5497120A
    • 1996-03-05
    • US350030
    • 1994-11-29
    • Masao ItoTakahiro Miki
    • Masao ItoTakahiro Miki
    • G01R19/165H03F1/30H03F3/45H03K17/16
    • G01R19/16519H03F1/303H03F3/45076
    • A differential amplifier circuit is obtained in which an operating power source voltage is suppressed to a minimum necessary level. The differential amplifier circuit includes a bias circuit having a differential amplifier with NMOS transistors (11A, 11B, 12A and 12B) and PMOS transistors (13A and 13B). Sources of NMOS transistors (11A)and (11B) are commonly grounded. A bias voltage (VB1) is supplied to gates of the NMOS transistors (11A) and (11B). Drains of the NMOS transistors (11A) and (11B) are connected to sources of NMOS transistors (12A) and (12B), respectively. A gate and a drain of the NMOS transistor (12A) are short-circuited to each other with the drain connected to a drain of a PMOS transistor (13A). A bias voltage (VB4) is applied to a gate of the NMOS transistor (12B). A drain of the NMOS transistor (12B) is connected to a drain of the PMOS transistor (13B) whose gate and drain are shared by each other. Gates of the PMOS transistors (13A) and (13B) are connected to a bias terminal (72) while sources of the PMOS transistors (13A) and (13B) are commonly connected to a power source. The bias terminal (72) is connected to an input bias terminal of a differential amplifier.
    • 获得了将工作电源电压抑制到最小必要水平的差分放大电路。 差分放大器电路包括具有NMOS晶体管(11A,11B,12A和12B)和PMOS晶体管(13A和13B)的差分放大器的偏置电路。 NMOS晶体管(11A)和(11B)的源极通常接地。 偏置电压(VB1)被提供给NMOS晶体管(11A)和(11B)的栅极。 NMOS晶体管(11A)和(11B)的漏极分别连接到NMOS晶体管(12A)和(12B)的源极。 NMOS晶体管(12A)的栅极和漏极彼此短路,漏极连接到PMOS晶体管(13A)的漏极。 偏置电压(VB4)施加到NMOS晶体管(12B)的栅极。 NMOS晶体管(12B)的漏极连接到其栅极和漏极彼此共享的PMOS晶体管(13B)的漏极。 PMOS晶体管(13A)和(13B)的栅极连接到偏置端子(72),而PMOS晶体管(13A)和(13B)的源极共同连接到电源。 偏置端子(72)连接到差分放大器的输入偏置端子。
    • 8. 发明授权
    • A/D converter
    • A / D转换器
    • US5225837A
    • 1993-07-06
    • US706834
    • 1991-05-29
    • Shiro HosotaniTakahiro MikiMasao Ito
    • Shiro HosotaniTakahiro MikiMasao Ito
    • H03M1/36H03M1/78
    • H03M1/362
    • An A/D converter includes a resistor network generating a reference voltage, a level detector for detecting the level of an input analogue signal with a reference voltage from the resistor network as a reference, and an encoder for providing a digital signal by encoding the output of the level detector. The level detector includes a plurality of comparators for bilevel-processing the input analogue signal with a preselected voltage from the resistor connection nodes of the resistor network as a reference voltage. The resistor network comprises a plurality of resistor elements between a first node receiving a first reference voltage and a second node receiving a second reference voltage, which are interconnected to provide a voltage from an associated connection node that is 1/2.sup.j times the difference between said first reference voltage and said second reference voltage. The comparator includes capacitors for providing the difference between the input analogue signal and the reference voltage by a capacitor coupling, and an inverter amplifier for determining the positive or negative of the voltage change generated by the capacitors. This structure implements an A/D converter of high precision with less elements.
    • A / D转换器包括产生参考电压的电阻网络,用于以来自电阻器网络的参考电压作为参考来检测输入模拟信号的电平的电平检测器,以及用于通过对输出进行编码来提供数字信号的编码器 的电平检测器。 电平检测器包括多个比较器,用于以来自电阻器网络的电阻器连接节点的预选电压作为参考电压对输入的模拟信号进行二维处理。 电阻网络包括在接收第一参考电压的第一节点和接收第二参考电压的第二节点之间的多个电阻器元件,其互连以提供来自相关联的连接节点的电压,所述相关联的连接节点是所述 第一参考电压和所述第二参考电压。 比较器包括用于通过电容器耦合提供输入模拟信号和参考电压之间的差异的电容器,以及用于确定由电容器产生的电压变化的正或负的反相放大器。 该结构实现了具有较低元件精度的A / D转换器。
    • 9. 发明授权
    • CMIS circuit and its driver
    • CMIS电路及其驱动程序
    • US5218247A
    • 1993-06-08
    • US762560
    • 1991-09-18
    • Masao ItoTakahiro Miki
    • Masao ItoTakahiro Miki
    • H01L21/8238H01L27/092H03K19/00
    • H03K19/0013
    • A semiconductor integrated circuit includes a complementary MIS circuit including first PMIS and NMIS transistors with their drain electrodes connected together. The integrated circuit further includes a driving level-shift which includes a second PMIS transistor having its drain electrode grounded, and having its source electrode connected to the gate of the first PMIS transistor and to a V.sub.DD voltage supply terminal via a first resistor. The level-shift circuit further includes a second NMIS transistor having its drain electrode connected directly to the V.sub.DD voltage supply terminal, having its source electrode grounded via a second resistor, and having its gate electrode connected to the gate electrode of the second PMIS transistor. An input voltage is applied to the gate electrodes of the second PMIS and NMIS transistors.
    • 半导体集成电路包括互补MIS电路,其包括第一PMIS和NMIS晶体管,其漏电极连接在一起。 集成电路还包括驱动电平转换,其包括其漏极接地的第二PMIS晶体管,并且其源极连接到第一PMIS晶体管的栅极,并经由第一电阻连接到VDD电压源端。 电平移位电路还包括第二NMIS晶体管,其漏极电极直接连接到VDD电压源端子,其源极通过第二电阻器接地,并且其栅电极连接到第二PMIS晶体管的栅电极。 输入电压施加到第二PMIS和NMIS晶体管的栅电极。