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1. 发明申请

US20100270264A1 NEAR FIELD EXPOSURE MASK, METHOD OF FORMING RESIST PATTERN USING THE MASK, AND METHOD OF PRODUCING DEVICE 失效
标题翻译：近场曝光掩模，使用掩模形成电阻图案的方法，以及制造装置的方法
公开(公告)号：US20100270264A1
公开(公告)日：2010-10-28
申请号：US12376426
申请日：2007-10-05
申请人： Toshiki Ito , Natsuhiko Mizutani , Akira Terao
发明人： Toshiki Ito , Natsuhiko Mizutani , Akira Terao
IPC分类号： B44C1/22 , G03F1/00 , G03F7/20
CPC分类号： G03F7/2014 , B82Y10/00 , G03F1/50 , G03F7/70325
摘要： Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2 formed above the transparent mask matrix l0 and containing silicon; a reflective layer l1 formed between the transparent mask matrix l0 and the light shielding layer l2; and an opening pattern provided in the reflective layer l1 and the light shielding layer l2 and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0 and the reflective layer l1 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
摘要翻译：提供一种可以抑制曝光期间掩模的发热的近场曝光掩模，并且还可以抑制每个镜头的抗蚀剂图案的尺寸变化，以及使用其的抗蚀剂图案形成方法。近场曝光掩模包括透明掩模矩阵10; 形成在透明掩模矩阵10上方并含有硅的遮光层12; 形成在透明掩模矩阵10和遮光层12之间的反射层l1; 以及设置在反射层11和遮光层12中并且尺寸小于曝光波长λ（nm）的开口图案，其中透明掩模矩阵10和反射层11之间的界面处的反射率高于在透明掩模矩阵和形成在透明掩模矩阵上的遮光层之间的界面处的反射率，并且包含在透明掩模矩阵和遮光层之间没有反射层的近场曝光掩模的硅。

2. 发明授权

US07968256B2 Near field exposure mask, method of forming resist pattern using the mask, and method of producing device 失效
标题翻译：近场曝光掩模，使用掩模形成抗蚀剂图案的方法，以及制造装置的方法
公开(公告)号：US07968256B2
公开(公告)日：2011-06-28
申请号：US12376426
申请日：2007-10-05
申请人： Toshiki Ito , Natsuhiko Mizutani , Akira Terao
发明人： Toshiki Ito , Natsuhiko Mizutani , Akira Terao
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/2014 , B82Y10/00 , G03F1/50 , G03F7/70325
摘要： Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2 formed above the transparent mask matrix l0 and containing silicon; a reflective layer l1 formed between the transparent mask matrix l0 and the light shielding layer l2; and an opening pattern provided in the reflective layer l1 and the light shielding layer l2 and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0 and the reflective layer l1 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
摘要翻译：提供一种可以抑制曝光期间掩模的发热的近场曝光掩模，并且还可以抑制每个镜头的抗蚀剂图案的尺寸变化，以及使用其的抗蚀剂图案形成方法。近场曝光掩模包括透明掩模矩阵10; 形成在透明掩模矩阵10上方并含有硅的遮光层12; 形成在透明掩模矩阵10和遮光层12之间的反射层l1; 以及设置在反射层11和遮光层12中并且尺寸小于曝光波长λ（nm）的开口图案，其中透明掩模矩阵10和反射层11之间的界面处的反射率高于在透明掩模矩阵和形成在透明掩模矩阵上的遮光层之间的界面处的反射率，并且包含在透明掩模矩阵和遮光层之间没有反射层的近场曝光掩模的硅。

3. 发明授权

US07704672B2 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US07704672B2
公开(公告)日：2010-04-27
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。

4. 发明授权

US07659039B2 Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method 失效
标题翻译：近场曝光掩模，制造该掩模的方法，具有该掩模的近场曝光装置和抗蚀剂图案形成方法
公开(公告)号：US07659039B2
公开(公告)日：2010-02-09
申请号：US10585644
申请日：2006-06-07
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , B82Y10/00 , G03F7/70325 , G03F7/7035
摘要： Disclosed is a near-field exposure mask having a light blocking layer formed on a substrate, the light blocking layer having an opening with an opening width narrower than a wavelength of an exposure light source, wherein exposure of an object to be exposed is carried out by use of near-field light to be produced at the opening while the exposure mask and the object to be exposed are placed in contact with each other, an important feature residing in that the light blocking layer is provided by a film that contains silicon in a range from 50% to 100% in terms of mole fraction.
摘要翻译：公开了一种具有在基板上形成的遮光层的近场曝光掩模，该遮光层具有开口宽度比曝光光源的波长窄的开口，其中进行曝光对象的曝光通过使曝光掩模和被曝光物体在开口处产生的近场光彼此接触，其特征在于阻光层由含有硅的膜提供，以摩尔分数计为50％至100％的范围。

5. 发明申请

US20090311631A1 NEAR-FIELD EXPOSURE APPARATUS AND NEAR-FIELD EXPOSURE METHOD 失效
标题翻译：近场曝光装置及近场曝光方法
公开(公告)号：US20090311631A1
公开(公告)日：2009-12-17
申请号：US11914040
申请日：2007-10-10
申请人： Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F9/7038 , B82Y10/00 , G03F7/70325 , G03F7/7035 , G03F7/70866 , G03F9/7096 , Y10S430/167
摘要： A near-field exposure apparatus includes a near-field exposure mask, a mechanism to place a substrate to be exposed, opposed to the near-field exposure mask, a mechanism to perform relative alignment of the near-field exposure mask and the substrate to be exposed, a mechanism to closely contact the near-field exposure mask and the substrate to be exposed, with each other, a mechanism to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed.
摘要翻译：近场曝光装置包括近场曝光掩模，与近场曝光掩模相对地放置待曝光的基板的机构，用于执行近场曝光掩模和基板的相对对准的机构，暴露出将近场曝光掩模和待曝光的基板紧密接触的机构，将曝光光投射到近场曝光掩模的机构，以及用于去除静电的软X射线照射装置在近场曝光掩模和待暴露的基板中的至少一个中充电的电。软X射线照射装置设置在远离待曝光的基板的近场曝光掩模的一侧。

6. 发明授权

US07605908B2 Near-field exposure mask, near-field exposure apparatus, and near-field exposure method 失效
标题翻译：近场曝光掩模，近场曝光装置和近场曝光法
公开(公告)号：US07605908B2
公开(公告)日：2009-10-20
申请号：US11864097
申请日：2007-09-28
申请人： Toshiki Ito , Natsuhiko Mizutani
发明人： Toshiki Ito , Natsuhiko Mizutani
IPC分类号： G03B27/02 , G03B27/20 , G03B27/62 , G03F1/00 , G03C5/04
CPC分类号： G03F7/24 , B82Y10/00 , G03F1/50 , G03F1/60 , G03F7/2014 , G03F7/7035
摘要： A near-field exposure mask includes a light blocking film having an opening smaller than a wavelength of exposure light, and a mask base material for holding the light blocking film. The near-field exposure mask is configured and positioned to effect exposure of an object to be exposed to near-field light generated corresponding to the opening during contact thereof with the object to be exposed. The mask base material is transparent to the exposure light and comprises a synthetic resin material having Young's modulus in a range of 1 GPa or more to 10 GPa or less.
摘要翻译：近场曝光掩模包括具有比曝光光的波长小的开口的遮光膜和用于保持遮光膜的掩模基材。近场曝光掩模被构造和定位成使得要暴露于与要暴露的物体接触期间对应于开口产生的近场光的物体的曝光。掩模基材对曝光光是透明的，并且包含杨氏模量在1GPa以上至10GPa以下的合成树脂材料。

7. 发明申请

US20090208850A1 Near-Field Exposure Mask, Method of Producing that Mask, Near-Field Exposure Apparatus Having that Mask, and Resist Pattern Forming Method 失效
标题翻译：近场曝光掩模，产生该掩模的方法，具有该掩模的近场曝光装置和抗蚀剂图案形成方法
公开(公告)号：US20090208850A1
公开(公告)日：2009-08-20
申请号：US10585644
申请日：2006-06-07
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/50 , B82Y10/00 , G03F7/70325 , G03F7/7035
摘要： Disclosed is a near-field exposure mask having a light blocking layer formed on a substrate, the light blocking layer having an opening with an opening width narrower than a wavelength of an exposure light source, wherein exposure of an object to be exposed is carried out by use of near-field light to be produced at the opening while the exposure mask and the object to be exposed are placed in contact with each other, an important feature residing in that the light blocking layer is provided by a film that contains silicon in a range from 50% to 100% in terms of mole fraction.
摘要翻译：公开了一种具有在基板上形成的遮光层的近场曝光掩模，该遮光层具有开口宽度比曝光光源的波长窄的开口，其中进行曝光对象的曝光通过使曝光掩模和被曝光物体在开口处产生的近场光彼此接触，其特征在于阻光层由含有硅的膜提供，以摩尔分数计为50％至100％的范围。

8. 发明申请

US20070218373A1 Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏硅烷偶联剂，形成图案的方法和制造装置的方法
公开(公告)号：US20070218373A1
公开(公告)日：2007-09-20
申请号：US11710901
申请日：2007-02-27
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F1/00
CPC分类号： G03F7/165 , C07F7/12 , C07F7/1804 , G03F7/0751 , G03F7/0755
摘要： Provided is a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern with a smaller number of process steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent having a secondary amino group protected by an o-nitrobenzyloxycarbonyl group.
摘要翻译：提供了用于形成具有较少数量的工艺步骤的低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用具有被邻硝基苄氧基羰基保护的仲氨基的感光性硅烷偶联剂。

9. 发明申请

US20080085474A1 EXPOSURE METHOD USING NEAR FIELD LIGHT AND PATTERN FORMATION METHOD USING THE METHOD 审中-公开
标题翻译：使用近场和曝光方法的曝光方法
公开(公告)号：US20080085474A1
公开(公告)日：2008-04-10
申请号：US11861711
申请日：2007-09-26
申请人： Natsuhiko Mizutani , Toshiki Ito
发明人： Natsuhiko Mizutani , Toshiki Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/2014 , B82Y10/00 , G03F1/50 , G03F7/7035
摘要： Provided is an exposure method using near field light which can form a pattern finer than a mask pitch and avoid difficulty when forming a mask for fine lithography at unity magnification. The exposure method is configured such that a mask including a light shielding film with a fine opening less in size than a wavelength of exposure light is closely contacted with a photosensitive thin film including a silane coupling agent on a substrate, and light of a wavelength at which the photosensitive thin film has sensitivity for propagating light is irradiated to perform exposure, wherein the exposure is performed with the light at such an exposure amount that an exposed portion in the photosensitive thin film just below an edge portion of the light shielding film and a non-exposed portion in the photosensitive thin film just below a central portion of the fine opening are formed coexistently.
摘要翻译：提供了一种使用近场光的曝光方法，其可以形成比掩模间距更细的图案，并且在以单位放大形成用于精细光刻的掩模时避免困难。曝光方法被配置为使得包括具有比曝光光的波长更小的精细开口的遮光膜的掩模与在基板上包括硅烷偶联剂的感光薄膜紧密接触，照射感光薄膜对传播光具有灵敏度的曝光，进行曝光，其中以这样的曝光量进行曝光，使曝光部分刚好在遮光膜的边缘部分处的感光薄膜的曝光部分和形成在微细开口的中央部正下方的感光性薄膜的非曝光部分共存。

10. 发明申请

US20070218398A1 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US20070218398A1
公开(公告)日：2007-09-20
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03C5/18
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl. group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。组。

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