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1. 发明授权

US07704672B2 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US07704672B2
公开(公告)日：2010-04-27
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。

2. 发明授权

US07659039B2 Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method 失效
标题翻译：近场曝光掩模，制造该掩模的方法，具有该掩模的近场曝光装置和抗蚀剂图案形成方法
公开(公告)号：US07659039B2
公开(公告)日：2010-02-09
申请号：US10585644
申请日：2006-06-07
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , B82Y10/00 , G03F7/70325 , G03F7/7035
摘要： Disclosed is a near-field exposure mask having a light blocking layer formed on a substrate, the light blocking layer having an opening with an opening width narrower than a wavelength of an exposure light source, wherein exposure of an object to be exposed is carried out by use of near-field light to be produced at the opening while the exposure mask and the object to be exposed are placed in contact with each other, an important feature residing in that the light blocking layer is provided by a film that contains silicon in a range from 50% to 100% in terms of mole fraction.
摘要翻译：公开了一种具有在基板上形成的遮光层的近场曝光掩模，该遮光层具有开口宽度比曝光光源的波长窄的开口，其中进行曝光对象的曝光通过使曝光掩模和被曝光物体在开口处产生的近场光彼此接触，其特征在于阻光层由含有硅的膜提供，以摩尔分数计为50％至100％的范围。

3. 发明申请

US20090208850A1 Near-Field Exposure Mask, Method of Producing that Mask, Near-Field Exposure Apparatus Having that Mask, and Resist Pattern Forming Method 失效
标题翻译：近场曝光掩模，产生该掩模的方法，具有该掩模的近场曝光装置和抗蚀剂图案形成方法
公开(公告)号：US20090208850A1
公开(公告)日：2009-08-20
申请号：US10585644
申请日：2006-06-07
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/50 , B82Y10/00 , G03F7/70325 , G03F7/7035
摘要： Disclosed is a near-field exposure mask having a light blocking layer formed on a substrate, the light blocking layer having an opening with an opening width narrower than a wavelength of an exposure light source, wherein exposure of an object to be exposed is carried out by use of near-field light to be produced at the opening while the exposure mask and the object to be exposed are placed in contact with each other, an important feature residing in that the light blocking layer is provided by a film that contains silicon in a range from 50% to 100% in terms of mole fraction.
摘要翻译：公开了一种具有在基板上形成的遮光层的近场曝光掩模，该遮光层具有开口宽度比曝光光源的波长窄的开口，其中进行曝光对象的曝光通过使曝光掩模和被曝光物体在开口处产生的近场光彼此接触，其特征在于阻光层由含有硅的膜提供，以摩尔分数计为50％至100％的范围。

4. 发明申请

US20070218373A1 Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏硅烷偶联剂，形成图案的方法和制造装置的方法
公开(公告)号：US20070218373A1
公开(公告)日：2007-09-20
申请号：US11710901
申请日：2007-02-27
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F1/00
CPC分类号： G03F7/165 , C07F7/12 , C07F7/1804 , G03F7/0751 , G03F7/0755
摘要： Provided is a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern with a smaller number of process steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent having a secondary amino group protected by an o-nitrobenzyloxycarbonyl group.
摘要翻译：提供了用于形成具有较少数量的工艺步骤的低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用具有被邻硝基苄氧基羰基保护的仲氨基的感光性硅烷偶联剂。

5. 发明申请

US20070218398A1 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US20070218398A1
公开(公告)日：2007-09-20
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03C5/18
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl. group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。组。

6. 发明申请

US20080107998A1 NEAR-FIELD EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD USING THE SAME 审中-公开
标题翻译：近场曝光方法及使用其的装置制造方法
公开(公告)号：US20080107998A1
公开(公告)日：2008-05-08
申请号：US11740604
申请日：2007-04-26
申请人： Yasuhisa Inao , Takako Yamaguchi , Toshiki Ito , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Takako Yamaguchi , Toshiki Ito , Natsuhiko Mizutani
IPC分类号： G03F9/00
CPC分类号： G03F7/2014 , G03F1/50 , G03F7/091 , G03F7/094 , G03F7/7035
摘要： A near-field exposure method in which a light blocking film with an opening having an opening width not greater than a wavelength size of exposure light is contacted to an object to be exposed and in which light from an exposure light source is projected on the light blocking film so that a pattern based on the opening of the light blocking film is formed on the object to be exposed, by use of near-field light produced at the opening, wherein the object to be exposed is prepared by a process that includes (i) a step of providing, upon a substrate having surface irregularity, a shape buffering layer so as to fill the surface irregularity thereof to thereby flatten the surface of the substrate, (ii) a step of providing, upon the shape buffering layer, a light reflecting layer for reflecting the exposure light, and (iii) a step of providing a photosensitive resist layer upon the light reflecting layer, and wherein the exposure is carried out to the object so prepared.
摘要翻译：一种近场曝光方法，其中具有不大于曝光光的波长尺寸的开口宽度的开口的遮光膜与待曝光的物体接触，并且来自曝光光源的光被投射到光使得通过使用在开口处产生的近场光，在待曝光的物体上形成基于遮光膜的开口的图案，其中待曝光的物体通过包括（ i）在具有表面不规则的基板上设置形状缓冲层以填充其表面不规则性从而使基板的表面变平的步骤，（ii）在形状缓冲层上设置一个用于反射曝光光的光反射层，以及（iii）在光反射层上提供光敏抗蚀剂层的步骤，并且其中对如此制备的物体进行曝光。

7. 发明授权

US07547503B2 Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏硅烷偶联剂，形成图案的方法和制造装置的方法
公开(公告)号：US07547503B2
公开(公告)日：2009-06-16
申请号：US11710901
申请日：2007-02-27
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F7/20 , G03F7/26 , G03F7/36 , C07F7/10
CPC分类号： G03F7/165 , C07F7/12 , C07F7/1804 , G03F7/0751 , G03F7/0755
摘要： Provided is a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern with a smaller number of process steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent having a secondary amino group protected by an o-nitrobenzyloxycarbonyl group.
摘要翻译：提供了用于形成具有较少数量的工艺步骤的低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用具有被邻硝基苄氧基羰基保护的仲氨基的感光性硅烷偶联剂。

8. 发明申请

US20080085479A1 PATTERN FORMING METHOD AND DEVICE PRODUCTION PROCESS USING THE METHOD 审中-公开
标题翻译：使用该方法的图案形成方法和设备生产过程
公开(公告)号：US20080085479A1
公开(公告)日：2008-04-10
申请号：US11866002
申请日：2007-10-02
申请人： Takako Yamaguchi , Toshiki Ito , Natsuhiko Mizutani
发明人： Takako Yamaguchi , Toshiki Ito , Natsuhiko Mizutani
IPC分类号： G03F7/20
CPC分类号： G03F7/11 , G03F7/0751
摘要： A pattern forming method for forming a pattern comprising a plurality of fine particles disposed on a substrate includes a step of forming, on the substrate, a silane coupling agent-containing layer containing an amino group-containing silane coupling agent; a step of forming a negative resist layer or a dissolution inhibition positive resist layer on the silane coupling agent-containing layer; a step of selectively removing the resist layer to expose the silane coupling agent-containing layer; and a step of disposing the plurality of fine particles on the exposed silane coupling agent-containing layer.
摘要翻译：用于形成包括设置在基板上的多个细颗粒的图案的图案形成方法包括在基板上形成含有含氨基的硅烷偶联剂的含硅烷偶联剂的层的步骤; 在含硅烷偶联剂的层上形成负的抗蚀剂层或溶解抑制正性抗蚀剂层的步骤; 选择性地除去抗蚀剂层以暴露含硅烷偶联剂的层的步骤; 以及将多个细颗粒设置在暴露的含硅烷偶联剂的层上的步骤。

9. 发明申请

US20060003269A1 Resist pattern forming method, substrate processing method, and device manufacturing method 审中-公开
标题翻译：抗蚀剂图案形成方法，基板处理方法和装置制造方法
公开(公告)号：US20060003269A1
公开(公告)日：2006-01-05
申请号：US11168422
申请日：2005-06-29
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
IPC分类号： G03F7/00
CPC分类号： G03F7/2014 , B82Y10/00 , G03F7/023 , G03F7/0382 , G03F7/0392
摘要： Disclosed is a pattern forming method for forming a resist pattern on a substrate to be processed. The method includes a resist layer forming step for forming a resist layer on the substrate, an exposure step for exposing the resist layer with near-field light, and a developing step for developing the exposed resist layer, wherein the resist layer is made of a resist material having an Y value calculated from a sensitivity curve, not less than 1.6.
摘要翻译：公开了一种用于在待处理的基板上形成抗蚀剂图案的图案形成方法。该方法包括用于在基板上形成抗蚀剂层的抗蚀剂层形成步骤，用近场光曝光抗蚀剂层的曝光步骤和用于显影曝光的抗蚀剂层的显影步骤，其中抗蚀剂层由具有由灵敏度曲线计算的Y值的抗蚀剂材料，不小于1.6。

10. 发明申请

US20090311631A1 NEAR-FIELD EXPOSURE APPARATUS AND NEAR-FIELD EXPOSURE METHOD 失效
标题翻译：近场曝光装置及近场曝光方法
公开(公告)号：US20090311631A1
公开(公告)日：2009-12-17
申请号：US11914040
申请日：2007-10-10
申请人： Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F9/7038 , B82Y10/00 , G03F7/70325 , G03F7/7035 , G03F7/70866 , G03F9/7096 , Y10S430/167
摘要： A near-field exposure apparatus includes a near-field exposure mask, a mechanism to place a substrate to be exposed, opposed to the near-field exposure mask, a mechanism to perform relative alignment of the near-field exposure mask and the substrate to be exposed, a mechanism to closely contact the near-field exposure mask and the substrate to be exposed, with each other, a mechanism to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed.
摘要翻译：近场曝光装置包括近场曝光掩模，与近场曝光掩模相对地放置待曝光的基板的机构，用于执行近场曝光掩模和基板的相对对准的机构，暴露出将近场曝光掩模和待曝光的基板紧密接触的机构，将曝光光投射到近场曝光掩模的机构，以及用于去除静电的软X射线照射装置在近场曝光掩模和待暴露的基板中的至少一个中充电的电。软X射线照射装置设置在远离待曝光的基板的近场曝光掩模的一侧。

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