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1. 发明授权

US07365356B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US07365356B2
公开(公告)日：2008-04-29
申请号：US11055663
申请日：2005-02-11
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01L29/06 , H01L31/072
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.
摘要翻译：本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。在光电阴极中，在基板的上层形成有光吸收层。在光吸收层的上层形成电子发射层。具有条纹状的接触层形成在电子发射层的上层。在接触层的表面上形成由金属构成的表面电极。调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

2. 发明申请

US20050168144A1 Photocathode 有权
公开(公告)号：US20050168144A1
公开(公告)日：2005-08-04
申请号：US11055663
申请日：2005-02-11
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01J1/34 , H01J40/06 , H01J43/08 , H01L29/06
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.

3. 发明授权

US06903363B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US06903363B2
公开(公告)日：2005-06-07
申请号：US10705901
申请日：2003-11-13
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01J1/34 , H01J40/06 , H01J43/08 , H01L29/06 , H01L33/00
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.
摘要翻译：本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。在光电阴极中，在基板的上层形成有光吸收层。在光吸收层的上层形成电子发射层。具有条纹状的接触层形成在电子发射层的上层。在接触层的表面上形成由金属构成的表面电极。调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

4. 发明授权

US07176625B2 Photocathode plate and electron tube 有权
标题翻译：光电阴极板和电子管
公开(公告)号：US07176625B2
公开(公告)日：2007-02-13
申请号：US10969319
申请日：2004-10-21
申请人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
发明人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J1/78 , H01J43/08 , H01J2231/50
摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate.In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.
摘要翻译：提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

5. 发明授权

US07816866B2 Photocathode comprising a plurality of openings on an electron emission layer 失效
标题翻译：光电阴极包括在电子发射层上的多个开口
公开(公告)号：US07816866B2
公开(公告)日：2010-10-19
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06 , H01J37/08 , G21K5/10 , H01L29/12
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

6. 发明申请

US20060038473A1 Photocathode plate and electron tube 有权
标题翻译：光电阴极板和电子管
公开(公告)号：US20060038473A1
公开(公告)日：2006-02-23
申请号：US10969319
申请日：2004-10-21
申请人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
发明人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
IPC分类号： H01J31/00 , H01J31/26 , H01J40/06
CPC分类号： H01J1/34 , H01J1/78 , H01J43/08 , H01J2231/50
摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate. In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.
摘要翻译：提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

7. 发明申请

US20070096648A1 Photocathode 失效
标题翻译：光电阴极
公开(公告)号：US20070096648A1
公开(公告)日：2007-05-03
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

8. 发明授权

US06563264B2 Photocathode and electron tube 有权
公开(公告)号：US06563264B2
公开(公告)日：2003-05-13
申请号：US09842831
申请日：2001-04-27
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
IPC分类号： H01J4018
CPC分类号： H01J1/34 , H01J2201/3423
摘要： This photocathode comprises: InP substrate 1; InAsx2P1−x2(0 x1>0.53) light-absorbing layer 3; InAsx3P1−x3 (0

9. 发明授权

US5591986A Photoemitter electron tube and photodetector 失效
标题翻译： Photoemitter电子管和光电探测器
公开(公告)号：US5591986A
公开(公告)日：1997-01-07
申请号：US299664
申请日：1994-09-02
申请人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
IPC分类号： H01J1/34 , H01L27/14 , H01J31/00 , H01L29/49
CPC分类号： H01J1/34 , H01J2201/3423
摘要： The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.
摘要翻译：本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成由形成在引线电极和一个表面之间的电场发射预定的极性电压。

10. 发明授权

US5471051A Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same 失效
标题翻译：能够检测一维或二维入射光的位置的光电阴极，光电管和含有它的光电检测装置
公开(公告)号：US5471051A
公开(公告)日：1995-11-28
申请号：US251928
申请日：1994-06-01
申请人： Minoru Niigaki , Katsuyuki Kinoshita , Toru Hirohata , Tuneo Ihara , Masami Yamada , Norio Asakura , Yasuharu Negi , Tomoko Suzuki
发明人： Minoru Niigaki , Katsuyuki Kinoshita , Toru Hirohata , Tuneo Ihara , Masami Yamada , Norio Asakura , Yasuharu Negi , Tomoko Suzuki
IPC分类号： H01J1/34 , H01J43/04 , H01J40/14
CPC分类号： H01J1/34 , H01J43/045
摘要： There is disclosed a photocathode comprising:a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.
摘要翻译：公开了一种光电阴极，包括：用于响应于入射光子而内部激发光电子的光电转换层; 具有光电子发射表面的半导体层，用于发射从光电子发射表面在光电转换层中产生和加速的光电子; 形成在所述半导体层的光电子发射表面上的上表面电极; 以及形成在半导体层上的下表面电极，使得下表面电极通过半导体层与上表面电极相对，上表面电极被分割以提供彼此电绝缘的多个像素电极多个像素电极分别连接到多个偏置施加电线。

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