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1. 发明公开

US20230187161A1 PHOTOCATHODE, AND METHOD FOR MANUFACTURING PHOTOCATHODE 审中-公开
公开(公告)号：US20230187161A1
公开(公告)日：2023-06-15
申请号：US17923949
申请日：2021-04-15
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY , HAMAMATSU PHOTONICS K.K.
发明人： Atsushi NAKAMURA , Yusuke NODA
IPC分类号： H01J1/34 , H01J9/12 , H01J43/08
CPC分类号： H01J1/34 , H01J9/12 , H01J43/08
摘要： A photocathode 4 includes an optically transparent conductive layer provided between a translucent substrate and a photoelectric conversion layer. The optically transparent conductive layer is formed of a constituent material including carbon. A Raman spectrum of the constituent material has a peak of a band, a peak of a band, a peak of a band, and a peak of a band.

2. 发明授权

US09478402B2 Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor 有权
标题翻译：光电倍增管，图像传感器和使用PMT或图像传感器的检测系统
公开(公告)号：US09478402B2
公开(公告)日：2016-10-25
申请号：US14198175
申请日：2014-03-05
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Chuang , David L. Brown , John Fielden
IPC分类号： H01L31/11 , H01L31/167 , H01J40/06 , H01L31/103 , H01J43/08
CPC分类号： H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
摘要： A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
摘要翻译：光电倍增管包括半导体光电阴极和光电二极管。值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层半导体层。半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。半导体光电阴极可以包括例如氮化镓。一个或多个p掺杂氮化镓层。在其他实施例中，半导体光电阴极可以包括硅。该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

3. 发明授权

US09147559B2 Photomultiplier and its manufacturing method 有权
标题翻译：光电倍增管及其制造方法
公开(公告)号：US09147559B2
公开(公告)日：2015-09-29
申请号：US14136236
申请日：2013-12-20
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
IPC分类号： H01J43/04 , H01J43/24
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
摘要翻译：本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极在电子倍增器部分中产生的电极被布置在外壳中。外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

4. 发明申请

US20140348293A1 Photomultiplier and Detection Systems 有权
标题翻译：光电倍增管和检测系统
公开(公告)号：US20140348293A1
公开(公告)日：2014-11-27
申请号：US14082658
申请日：2013-11-18
申请人： Rapiscan Systems, Inc.
发明人： Edward James Morton
IPC分类号： H01J43/30 , G01V5/00 , H01J43/18 , G01T1/208
CPC分类号： H01J43/30 , G01T1/16 , G01T1/167 , G01T1/208 , G01T3/06 , G01V5/0025 , G01V5/0091 , H01J40/04 , H01J43/08 , H01J43/18
摘要： The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state whilst an external radiation source is irradiating the object.
摘要翻译：本发明提供了一种可切换的光电倍增器，其可在检测状态和非检测状态之间切换，包括入射辐射被布置成入射的阴极。光电倍增管还包括一系列倍增电极，其布置成在检测到光辐射时放大阴极产生的电流。本发明还提供了一种检测系统，用于检测物体中的辐射发射材料。该系统包括可在检测器被布置成检测辐射的检测状态和其中检测器被布置为不检测辐射的非检测状态之间切换的检测器。该系统还包括控制器，其布置成控制检测器在状态之间的切换，使得当外部辐射源照射物体时检测器切换到非检测状态。

5. 发明授权

US08242694B2 Photomultiplier and its manufacturing method 有权
标题翻译：光电倍增管及其制造方法
公开(公告)号：US08242694B2
公开(公告)日：2012-08-14
申请号：US13113604
申请日：2011-05-23
申请人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
发明人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
IPC分类号： H01J43/20 , H01J43/26
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
摘要翻译：本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极在电子倍增器部分中产生的电极被布置在外壳中。外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

6. 发明授权

US07855510B2 Photomultiplier tube 有权
标题翻译：光电倍增管
公开(公告)号：US07855510B2
公开(公告)日：2010-12-21
申请号：US10585355
申请日：2004-12-24
申请人： Takayuki Ohmura , Suenori Kimura , Masuo Ito
发明人： Takayuki Ohmura , Suenori Kimura , Masuo Ito
IPC分类号： H01J43/18
CPC分类号： H01J43/08
摘要： A photomultiplier tube includes: a cathode, a plurality of dynodes, and an electron lens forming electrode. The cathode emits electrons in response to incident light. The plurality of dynodes multiplies electrons emitted from the cathode. The electron lens forming the electrode is disposed in a prescribed position in relation to an edge of a first dynode positioned in a first stage from the cathode and an edge of a second dynode positioned in a second stage from the cathode, and smoothes an equipotential surface in a space between the first dynode and the second dynode along a longitudinal direction of the first dynode. This structure improves time resolution in response to incident light.
摘要翻译：光电倍增管包括：阴极，多个倍增电极和电子透镜形成电极。阴极响应于入射光而发射电子。多个倍增电极将从阴极发射的电子相乘。形成电极的电子透镜相对于从阴极位于第一级的第一倍增电极的边缘和从阴极定位在第二级中的第二倍增电极的边缘相对于预定位置设置，并平滑等电位面在第一倍增电极和第二倍增电极之间的空间中沿着第一倍增极的纵向方向。该结构提高响应于入射光的时间分辨率。

7. 发明授权

US07602122B2 Photomultiplier 有权
标题翻译：光电倍增管
公开(公告)号：US07602122B2
公开(公告)日：2009-10-13
申请号：US10586498
申请日：2005-02-16
申请人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
发明人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
IPC分类号： H01J43/04
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
摘要翻译：本发明涉及实现高乘法器效率的精细结构的光电倍增管。光电倍增管包括内壳保持真空的外壳，在外壳中，响应于入射光发射光电子的光电阴极，执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极用于取出在电子倍增器部分产生的二次电子。具体而言，在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部，在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子在其表面上形成的发光表面。

8. 发明申请

US20080018246A1 Photomultiplier 有权
标题翻译：光电倍增管
公开(公告)号：US20080018246A1
公开(公告)日：2008-01-24
申请号：US10586498
申请日：2005-02-16
申请人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
发明人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
IPC分类号： H01J43/04
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
摘要翻译：本发明涉及实现高乘法器效率的精细结构的光电倍增管。光电倍增管包括内壳保持真空的外壳，在外壳中，响应于入射光发射光电子的光电阴极，执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极用于取出在电子倍增器部分产生的二次电子。具体而言，在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部，在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子在其表面上形成的发光表面。

9. 发明申请

US20070194713A1 Photomultiplier and its manufacturing method 有权
标题翻译：光电倍增管及其制造方法
公开(公告)号：US20070194713A1
公开(公告)日：2007-08-23
申请号：US10589602
申请日：2005-02-16
申请人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
发明人： Hiroyuki Kyushima , Hideki Shimoi , Akihiro Kageyama , Keisuke Inoue , Masuo Ito
IPC分类号： H01J43/04 , H01J43/18
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
摘要翻译：本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极在电子倍增器部分中产生的电极被布置在外壳中。外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

10. 发明授权

US07176625B2 Photocathode plate and electron tube 有权
标题翻译：光电阴极板和电子管
公开(公告)号：US07176625B2
公开(公告)日：2007-02-13
申请号：US10969319
申请日：2004-10-21
申请人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
发明人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J1/78 , H01J43/08 , H01J2231/50
摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate.In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.
摘要翻译：提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

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