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1. 发明授权

US07816866B2 Photocathode comprising a plurality of openings on an electron emission layer 失效
标题翻译：光电阴极包括在电子发射层上的多个开口
公开(公告)号：US07816866B2
公开(公告)日：2010-10-19
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06 , H01J37/08 , G21K5/10 , H01L29/12
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

2. 发明申请

US20070096648A1 Photocathode 失效
标题翻译：光电阴极
公开(公告)号：US20070096648A1
公开(公告)日：2007-05-03
申请号：US11585936
申请日：2006-10-25
申请人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
发明人： Kazutoshi Nakajima , Minoru Niigaki , Tomoko Mochizuki , Toru Hirohata
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
摘要翻译：半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

3. 发明授权

US07176625B2 Photocathode plate and electron tube 有权
标题翻译：光电阴极板和电子管
公开(公告)号：US07176625B2
公开(公告)日：2007-02-13
申请号：US10969319
申请日：2004-10-21
申请人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
发明人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
IPC分类号： H01J40/06
CPC分类号： H01J1/34 , H01J1/78 , H01J43/08 , H01J2231/50
摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate.In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.
摘要翻译：提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

4. 发明申请

US20060038473A1 Photocathode plate and electron tube 有权
标题翻译：光电阴极板和电子管
公开(公告)号：US20060038473A1
公开(公告)日：2006-02-23
申请号：US10969319
申请日：2004-10-21
申请人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
发明人： Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
IPC分类号： H01J31/00 , H01J31/26 , H01J40/06
CPC分类号： H01J1/34 , H01J1/78 , H01J43/08 , H01J2231/50
摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate. In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.
摘要翻译：提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

5. 发明授权

US07365356B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US07365356B2
公开(公告)日：2008-04-29
申请号：US11055663
申请日：2005-02-11
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01L29/06 , H01L31/072
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.
摘要翻译：本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。在光电阴极中，在基板的上层形成有光吸收层。在光吸收层的上层形成电子发射层。具有条纹状的接触层形成在电子发射层的上层。在接触层的表面上形成由金属构成的表面电极。调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

6. 发明申请

US20050168144A1 Photocathode 有权
公开(公告)号：US20050168144A1
公开(公告)日：2005-08-04
申请号：US11055663
申请日：2005-02-11
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01J1/34 , H01J40/06 , H01J43/08 , H01L29/06
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.

7. 发明授权

US06903363B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US06903363B2
公开(公告)日：2005-06-07
申请号：US10705901
申请日：2003-11-13
申请人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
发明人： Toru Hirohata , Minoru Niigaki , Tomoko Mochizuki , Masami Yamada
IPC分类号： H01J1/34 , H01J40/06 , H01J43/08 , H01L29/06 , H01L33/00
CPC分类号： H01J1/34 , H01J2201/342
摘要： The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.
摘要翻译：本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。在光电阴极中，在基板的上层形成有光吸收层。在光吸收层的上层形成电子发射层。具有条纹状的接触层形成在电子发射层的上层。在接触层的表面上形成由金属构成的表面电极。调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

8. 发明授权

US06563264B2 Photocathode and electron tube 有权
公开(公告)号：US06563264B2
公开(公告)日：2003-05-13
申请号：US09842831
申请日：2001-04-27
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Mochizuki , Hirofumi Kan
IPC分类号： H01J4018
CPC分类号： H01J1/34 , H01J2201/3423
摘要： This photocathode comprises: InP substrate 1; InAsx2P1−x2(0 x1>0.53) light-absorbing layer 3; InAsx3P1−x3 (0

9. 发明申请

US20080121928A1 Semiconductor photocathode 审中-公开
标题翻译：半导体光电阴极
公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
申请人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
发明人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

10. 发明申请

US20080121909A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
申请人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合，做异质结。第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

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