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1. 发明申请

US20110246133A1 ROTATOR SENSOR 审中-公开
标题翻译：旋转传感器
公开(公告)号：US20110246133A1
公开(公告)日：2011-10-06
申请号：US13031810
申请日：2011-02-22
申请人： Tomoyuki HARADA , Hirofumi Uenoyama , Takashi Ishikawa
发明人： Tomoyuki HARADA , Hirofumi Uenoyama , Takashi Ishikawa
IPC分类号： G01B7/30 , G06F15/00
CPC分类号： G01D5/145
摘要： A rotation sensor includes: a magnetism generator; a sensor chip having a magneto-resistance element region and a Hall element region; and a detection circuit for detecting a relative rotation angle with reference to the magnetism generator according to output signals from each magneto-resistance element and each Hall element to detect. A phase difference is provided between output signals from the magneto-resistance elements. A phase difference is provided between output signals from the Hall elements. The magneto-resistance element region and the Hall element region at least partially overlap with each other. The detection circuit includes a comparison section, an angle computing section, and an output section. The comparison section compares an output level from each Hall element with a predetermined threshold value level, and provides a comparison result for each Hall element. The angle computing section calculates a calculation angle corresponding to the relative rotation angle with using an output signal from each magneto-resistance element. The output section compares the calculation angle with a predetermined threshold value, and provides a comparison result for each magneto-resistance element. The output section outputs a signal corresponding to the relative rotation angle based on a comparison result from the output section and a comparison result from the comparison section.
摘要翻译：旋转传感器包括：磁性发生器; 具有磁阻元件区域和霍尔元件区域的传感器芯片; 以及检测电路，用于根据来自每个磁阻元件和每个霍尔元件的输出信号检测相对于磁性发生器的相对旋转角度。在来自磁阻元件的输出信号之间提供相位差。在霍尔元件的输出信号之间提供相位差。磁阻元件区域和霍尔元件区域至少部分地彼此重叠。检测电路包括比较部分，角度计算部分和输出部分。比较部分将每个霍尔元件的输出电平与预定阈值电平进行比较，并为每个霍尔元件提供比较结果。角度计算部分使用来自每个磁阻元件的输出信号计算与相对旋转角度对应的计算角度。输出部分将计算角与预定阈值进行比较，并提供每个磁阻元件的比较结果。输出部基于来自输出部的比较结果和比较部的比较结果，输出与相对旋转角对应的信号。

2. 发明授权

US06924639B2 Position determination device using magnetoresistive element 有权
标题翻译：使用磁阻元件的位置确定装置
公开(公告)号：US06924639B2
公开(公告)日：2005-08-02
申请号：US10387550
申请日：2003-03-14
申请人： Hirofumi Uenoyama
发明人： Hirofumi Uenoyama
IPC分类号： G01D5/245 , F02D41/34 , F02D45/00 , G01D5/14 , G01D5/16 , G01D5/244 , G01B7/30
CPC分类号： G01D5/147 , F02D41/009 , G01D5/142 , G01D5/145 , G01D5/24476
摘要： In a position detecting device for a rotor, such as a camshaft gear, a magnet sensor is constructed of first, second, third, and fourth MRE bridges. The bridges are positioned symmetric to a magnetic axis of a bias magnet. The third bridge is arranged at a midpoint between the first bridge and the magnetic axis. The fourth bridge is arranged at a midpoint between the second bridge and the magnetic axis. Outputs of the bridges are inputted to a differential amplifier circuit to obtain a single differential output. A position of the rotor is determined based on the differential output, regardless of gear-teeth shapes of the rotor.
摘要翻译：在用于诸如凸轮轴齿轮的转子的位置检测装置中，磁传感器由第一，第二，第三和第四MRE桥构成。桥被定位成与偏置磁体的磁轴对称。第三桥被布置在第一桥和磁轴之间的中点处。第四桥被布置在第二桥和磁轴之间的中点处。桥的输出被输入到差分放大器电路以获得单个差分输出。无论转子的齿轮形状如何，基于差动输出确定转子的位置。

3. 发明授权

US06366079B1 Rotation detector having two pairs of symmetrically positioned magnetoresistive element circuits 有权
标题翻译：旋转检测器具有两对对称位置的磁阻元件电路
公开(公告)号：US06366079B1
公开(公告)日：2002-04-02
申请号：US09699557
申请日：2000-10-31
申请人： Hirofumi Uenoyama
发明人： Hirofumi Uenoyama
IPC分类号： G01B730
CPC分类号： G01D5/147 , G01P3/488 , G01R33/09
摘要： Rotation of a rotating object such as a toothed rotor is detected based on put potentials of a bridge circuit having four magnetoresistive elements. The bridge circuit formed on an integrated circuit chip is positioned in a biasing magnetic field generated by a magnet disposed at a vicinity of the toothed rotor. A pair of magnetoresistive elements form a first circuit in the bridge while the others pairs forms a second circuit. To cancel influence of magnetostrictive effects due to an external force imposed on the integrated circuit chip, the first and second circuits in the bridge are positioned symmetrically to each other with respect to a center line of the biasing magnetic field.
摘要翻译：基于具有四个磁阻元件的桥接电路的放置电位检测诸如齿形转子的旋转物体的旋转。形成在集成电路芯片上的桥接电路位于由设置在齿形转子附近的磁体产生的偏置磁场中。一对磁阻元件在桥中形成第一电路，而其它对形成第二电路。为了消除由于施加在集成电路芯片上的外力引起的磁致伸缩效应的影响，桥中的第一和第二电路相对于偏置磁场的中心线对称地定位。

4. 发明授权

US5619050A Semiconductor acceleration sensor with beam structure 失效
标题翻译：具有梁结构的半导体加速度传感器
公开(公告)号：US5619050A
公开(公告)日：1997-04-08
申请号：US399345
申请日：1995-03-06
申请人： Hirofumi Uenoyama , Kenichi Ao , Masakazu Kanosue , Yasutoshi Suzuki , Yukihiro Takeuchi
发明人： Hirofumi Uenoyama , Kenichi Ao , Masakazu Kanosue , Yasutoshi Suzuki , Yukihiro Takeuchi
IPC分类号： G01P15/125 , G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/12 , Y10S73/01
摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.
摘要翻译：公开了能够减小漏电流的半导体加速度传感器及其制造方法。梁结构设置在硅衬底上。梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。可动电极部分形成在可动部分的一部分中。在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。在硅衬底中形成外围电路。光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。

5. 发明申请

US20090251134A1 Rotation detection apparatus 有权
标题翻译：旋转检测装置
公开(公告)号：US20090251134A1
公开(公告)日：2009-10-08
申请号：US12385091
申请日：2009-03-31
申请人： Hirofumi Uenoyama
发明人： Hirofumi Uenoyama
IPC分类号： G01B7/30
CPC分类号： G01D5/24466 , G01D5/20
摘要： A rotation detection apparatus for detecting a rotation state of a gear is disclosed. The rotation detection apparatus includes a magnetic sensor, a magnetic filed generation unit, and a self-diagnosis unit. The sensor includes: a bias magnet for generating a bias magnetic field extending toward the gear; and a magnetic-electric conversion element for sensing the bias magnetic field acting thereon. When the gear is in a stationary state, the magnetic filed generation unit generates a diagnosis use magnetic field extending toward the magnetic-electric conversion element. The self-diagnosis unit determines whether the magnetic sensor has a failure based on an output from the magnetic-electric conversion element that is subjected to the bias magnetic field and the self-diagnosis use magnetic field.
摘要翻译：公开了一种用于检测齿轮的旋转状态的旋转检测装置。旋转检测装置包括磁传感器，磁场产生单元和自诊断单元。该传感器包括：用于产生向齿轮延伸的偏置磁场的偏置磁体; 以及用于感测作用在其上的偏置磁场的磁电转换元件。当齿轮处于静止状态时，磁场产生单元产生向磁电转换元件延伸的诊断用磁场。自诊断单元基于来自受到偏磁场的磁电转换元件和自诊断用磁场的输出，确定磁传感器是否具有故障。

6. 发明授权

US6104186A Rotation detector using magnetoresistance element positioned in vicinity of outer peripheral edge of toothed gear 失效
标题翻译：旋转检测器使用位于齿轮外周边缘附近的磁阻元件
公开(公告)号：US6104186A
公开(公告)日：2000-08-15
申请号：US57495
申请日：1998-04-09
申请人： Toshitaka Yamada , Seiki Aoyama , Hirofumi Uenoyama
发明人： Toshitaka Yamada , Seiki Aoyama , Hirofumi Uenoyama
IPC分类号： F02P7/07 , G01D5/14 , G01D5/16 , G01D5/245 , G01P3/488 , G01R33/06 , G01B7/30
CPC分类号： G01D5/147 , F02P7/07 , G01D5/2451 , G01P3/488
摘要： A magnetoresistance element detects an angular position of a toothed gear rotated by an engine. The element (first element) is positioned at a vicinity of the peripheral edge of the gear tooth in a magnetic filed supplied from a bias magnet. The magnetic field direction is changed by the tooth, which is detected by the element even when the gear is not rotated before the engine starts. To detect an exact angle of the gear, an additional magnetoresistance element positioned perpendicularly to the first element may be used. The gear tooth position is detected by the first element even when the gear is not rotated, and once the gear rotates, the second element detects an exact angular position of the gear.
摘要翻译：磁阻元件检测由发动机旋转的齿轮的角位置。元件（第一元件）位于从偏置磁铁供给的磁场中的齿轮齿周边附近。即使齿轮在发动机起动前没有旋转，磁场方向由齿也可以被元件所检测。为了检测齿轮的精确角度，可以使用垂直于第一元件定位的附加磁阻元件。即使齿轮没有旋转，齿轮齿位置也被第一元件检测到，一旦齿轮旋转，第二元件就检测齿轮的确切的角度位置。

7. 发明授权

US5618738A Manufacturing method for magnetoresistance elements 失效
标题翻译：磁阻元件的制造方法
公开(公告)号：US5618738A
公开(公告)日：1997-04-08
申请号：US404147
申请日：1995-03-14
申请人： Kenichi Ao , Minoru Murata , Hiroki Noguchi , Yoshimi Yoshino , Hirofumi Uenoyama
发明人： Kenichi Ao , Minoru Murata , Hiroki Noguchi , Yoshimi Yoshino , Hirofumi Uenoyama
IPC分类号： G01R33/09 , H01F10/06 , H01F41/02 , H01F41/30 , H01F41/34 , H01L21/66 , H01L21/8222 , H01L27/06 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , H01F10/06 , H01F41/302 , H01F41/34 , H01L43/12
摘要： A method of manufacturing a magnetoresistance element that can accurately sort out truely defective products from apparently defective products due to the manufacturing processes. Manufacturing processes for MR elements includes a MR element formation process, a magnetic field application process and an electric inspection process. In the magnetic field process, the magnetic field application is limited to a range within 75.degree. to the longitudinal direction of a MR element pattern. By performing the magnetic field application process before the electric inspection process, the anisotropic magnetic field due to a shape magnetic anisotropy of the MR element can be aligned almost in a fixed direction, defective products due to the manufacturing processes can exactly be sorted out from the apparently defective products in the electric inspection process, so that the yield rate can be improved.
摘要翻译：一种制造磁阻元件的方法，其可以由于制造工艺而精确地排除来自明显缺陷的产品的真实缺陷产品。 MR元件的制造过程包括MR元件形成处理，磁场施加处理和电检查过程。在磁场处理中，磁场施加被限制在与MR元件图案的纵向方向成75°的范围内。通过在电检测过程之前执行磁场施加处理，由于MR元件的形状磁各向异性而产生的各向异性磁场可以几乎在固定方向上排列，由于制造过程而导致的缺陷产物可以从在电气检查过程中显然有缺陷的产品，从而可以提高产量。

8. 发明授权

US5471084A Magnetoresistive element and manufacturing method therefor 失效
标题翻译：磁阻元件及其制造方法
公开(公告)号：US5471084A
公开(公告)日：1995-11-28
申请号：US94142
申请日：1993-07-30
申请人： Yasutoshi Suzuki , Kenichi Ao , Hirofumi Uenoyama , Hiroki Noguchi , Koji Eguchi , Ichiro Ito , Yoshimi Yoshino
发明人： Yasutoshi Suzuki , Kenichi Ao , Hirofumi Uenoyama , Hiroki Noguchi , Koji Eguchi , Ichiro Ito , Yoshimi Yoshino
IPC分类号： H01L43/08 , H01L27/22
CPC分类号： H01L43/08
摘要： This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used. Also, the surface protection film may be a multi-layered film having a first film containing no nitrogen, such as a silicon oxide film, and a second film of silicon nitride film formed on the first film.
摘要翻译： PCT No.PCT / JP92 / 01581 Sec。 371日期：1993年7月30日 102（e）日期1993年7月30日PCT提交1992年12月3日PCT公布。公开号WO93 / 11569 日本特许公报1993年6月10日。本发明涉及用于磁传感器等的磁阻元件。铁磁磁阻元件薄膜形成为与铝布线的上端部电连接并与其重叠金属在基板上。通过使用350〜450℃的真空热处理，在重叠部分形成Ni-Al系合金。因此，即使在基板上随后通过等离子体CVD形成氮化硅的表面保护膜，合金也能防止铝布线金属的上端部的氮化。因此，可以防止表面被氮化硅膜防止湿气，而不增加磁阻元件薄膜和布线金属之间的接触电阻。可以使用TiW，TiN，Ti，Zr等其他导电性金属代替Ni-Al系合金。此外，表面保护膜也可以是具有不含氮的第一膜的多层膜，例如氧化硅膜，以及形成在第一膜上的第二氮化硅膜。

9. 发明授权

US08138752B2 Rotation detection apparatus 有权
标题翻译：旋转检测装置
公开(公告)号：US08138752B2
公开(公告)日：2012-03-20
申请号：US12385091
申请日：2009-03-31
申请人： Hirofumi Uenoyama
发明人： Hirofumi Uenoyama
IPC分类号： G01B7/30
CPC分类号： G01D5/24466 , G01D5/20
摘要： A rotation detection apparatus for detecting a rotation state of a gear is disclosed. The rotation detection apparatus includes a magnetic sensor, a magnetic filed generation unit, and a self-diagnosis unit. The sensor includes: a bias magnet for generating a bias magnetic field extending toward the gear; and a magnetic-electric conversion element for sensing the bias magnetic field acting thereon. When the gear is in a stationary state, the magnetic filed generation unit generates a diagnosis use magnetic field extending toward the magnetic-electric conversion element. The self-diagnosis unit determines whether the magnetic sensor has a failure based on an output from the magnetic-electric conversion element that is subjected to the bias magnetic field and the self-diagnosis use magnetic field.
摘要翻译：公开了一种用于检测齿轮的旋转状态的旋转检测装置。旋转检测装置包括磁传感器，磁场产生单元和自诊断单元。该传感器包括：用于产生向齿轮延伸的偏置磁场的偏置磁体; 以及用于感测作用在其上的偏置磁场的磁电转换元件。当齿轮处于静止状态时，磁场产生单元产生向磁电转换元件延伸的诊断用磁场。自诊断单元基于来自受到偏磁场的磁电转换元件和自诊断用磁场的输出，确定磁传感器是否具有故障。

10. 发明授权

US06954063B2 Motion detecting device using magnetoresistive unit 有权
标题翻译：运动检测装置采用磁阻单元
公开(公告)号：US06954063B2
公开(公告)日：2005-10-11
申请号：US10101834
申请日：2002-03-21
申请人： Takamasa Kinpara , Hirofumi Uenoyama
发明人： Takamasa Kinpara , Hirofumi Uenoyama
IPC分类号： G01D5/245 , G01D5/14 , G01D5/16 , G01P3/487 , G01R33/02 , G01R33/09 , G01B7/30
CPC分类号： G01D5/145 , G01P3/487
摘要： A rotation detecting device includes a magnetoresistive unit comprising a pair of magnetoresistive sensing elements arranged in line symmetry, and a biasing magnet that generates magnetic flux. The magnetoresistive unit is arranged so that its line of symmetry extends in the direction of the magnetic flux generated by the biasing magnet. As a result, an output of the magnetoresistive unit does not change when the magnetic flux passes along the line of symmetry whether operating in a high temperature condition or a room temperature condition. By setting the threshold level to this output voltage, the output of the magnetoresistive unit can be shaped into a pulse signal without changing it in correspondence with temperatures.
摘要翻译：旋转检测装置包括磁阻单元，其包括以线对称布置的一对磁阻感测元件和产生磁通量的偏置磁体。磁阻单元布置成使得其对称线在偏置磁体产生的磁通量的方向上延伸。结果，当磁通量沿着对称线通过时，磁阻单元的输出不变，无论是在高温条件还是室温条件下工作。通过将阈值电平设置为该输出电压，磁阻单元的输出可以被形成为脉冲信号而不改变它对应于温度。

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