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1. 发明授权

US5619050A Semiconductor acceleration sensor with beam structure 失效
标题翻译：具有梁结构的半导体加速度传感器
公开(公告)号：US5619050A
公开(公告)日：1997-04-08
申请号：US399345
申请日：1995-03-06
申请人： Hirofumi Uenoyama , Kenichi Ao , Masakazu Kanosue , Yasutoshi Suzuki , Yukihiro Takeuchi
发明人： Hirofumi Uenoyama , Kenichi Ao , Masakazu Kanosue , Yasutoshi Suzuki , Yukihiro Takeuchi
IPC分类号： G01P15/125 , G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/12 , Y10S73/01
摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.
摘要翻译：公开了能够减小漏电流的半导体加速度传感器及其制造方法。梁结构设置在硅衬底上。梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。可动电极部分形成在可动部分的一部分中。在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。在硅衬底中形成外围电路。光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。

2. 发明授权

US5851851A Method for fabricating a semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器的制造方法
公开(公告)号：US5851851A
公开(公告)日：1998-12-22
申请号：US399342
申请日：1995-03-06
申请人： Hirofumi Uenoyama , Masakazu Kanosue , Kenichi Ao , Yasutoshi Suzuki
发明人： Hirofumi Uenoyama , Masakazu Kanosue , Kenichi Ao , Yasutoshi Suzuki
IPC分类号： G01P15/08 , G01P15/12 , H01L21/78
CPC分类号： G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.
摘要翻译：本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。可动构件由该聚酰亚胺膜支撑。因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。此后，将硅衬底浸入软化水中以用软化水代替蚀刻液，随后将硅衬底干燥。因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

3. 发明授权

US5936159A Semiconductor sensor having multi-layer movable beam structure film 失效
标题翻译：具有多层可移动束结构膜的半导体传感器
公开(公告)号：US5936159A
公开(公告)日：1999-08-10
申请号：US755097
申请日：1996-11-25
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
IPC分类号： G01P15/08 , G01P15/12 , H01L21/28 , H01L29/51 , H01L29/84
CPC分类号： H01L21/28238 , G01P15/0802 , G01P15/124 , H01L29/51 , H01L29/84 , G01P2015/0814 , G01P2015/0828
摘要： A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.
摘要翻译：一种半导体传感器，包括具有减小的偏转特性的可动构件梁结构。传感器包括从半导体衬底悬挂的可移动的光束结构膜，其间插入在光束结构膜和衬底之间。束结构膜由沿膜厚方向层叠的多个膜层构成。此外，应力消除层插入在各个膜之间以减小结构上的整体内部应力。

4. 发明授权

US5627397A Semiconductor acceleration sensor with source and drain regions 失效
标题翻译：具有源极和漏极区域的半导体加速度传感器
公开(公告)号：US5627397A
公开(公告)日：1997-05-06
申请号：US402949
申请日：1995-03-13
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
IPC分类号： G01P1/00 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/124 , G01P1/006 , Y10S73/01
摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.
摘要翻译：根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。在该检测中使用两个晶体管结构。一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。此时，另一晶体管结构中的固定电极之间的电流降低。这两个晶体管结构靠近地设置。通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

5. 发明授权

US5587343A Semiconductor sensor method 失效
标题翻译：半导体传感器方法
公开(公告)号：US5587343A
公开(公告)日：1996-12-24
申请号：US401044
申请日：1995-03-08
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
IPC分类号： G01L1/18 , G01L1/22 , G01P15/08 , G01P15/12 , H01L21/28 , H01L29/51 , H01L29/84 , H01L21/00 , B44C1/22
CPC分类号： H01L21/28238 , G01P15/0802 , G01P15/124 , H01L29/51 , H01L29/84 , G01P2015/0828
摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.
摘要翻译：一种制造半导体传感器的方法，其中公开了可移动部件的偏转。在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。进行通过光刻法的干蚀刻等的图案化，形成可动部件。然后蚀刻可动件下方的氧化硅膜。

6. 发明授权

US5551586A Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device 失效
标题翻译：一种使用电磁转换装置的电磁转换装置和位移检测器的制造方法
公开(公告)号：US5551586A
公开(公告)日：1996-09-03
申请号：US293966
申请日：1994-08-24
申请人： Hirofumi Uenoyama , Kenichi Ao , Yasutoshi Suzuki , Yoshimi Yoshino , Motofumi Suzuki
发明人： Hirofumi Uenoyama , Kenichi Ao , Yasutoshi Suzuki , Yoshimi Yoshino , Motofumi Suzuki
IPC分类号： G01B7/00 , C23C28/00 , G01D5/14 , G01D5/16 , G01D5/18 , G01P3/487 , G01R33/09 , H01L27/22 , B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： G01D5/145 , B82Y25/00 , C23C28/00 , G01P3/487 , G01R33/093 , H01L27/22
摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.
摘要翻译：一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。磁电转换装置位于IC芯片上。这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十几十埃。

7. 发明授权

US5471084A Magnetoresistive element and manufacturing method therefor 失效
标题翻译：磁阻元件及其制造方法
公开(公告)号：US5471084A
公开(公告)日：1995-11-28
申请号：US94142
申请日：1993-07-30
申请人： Yasutoshi Suzuki , Kenichi Ao , Hirofumi Uenoyama , Hiroki Noguchi , Koji Eguchi , Ichiro Ito , Yoshimi Yoshino
发明人： Yasutoshi Suzuki , Kenichi Ao , Hirofumi Uenoyama , Hiroki Noguchi , Koji Eguchi , Ichiro Ito , Yoshimi Yoshino
IPC分类号： H01L43/08 , H01L27/22
CPC分类号： H01L43/08
摘要： This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used. Also, the surface protection film may be a multi-layered film having a first film containing no nitrogen, such as a silicon oxide film, and a second film of silicon nitride film formed on the first film.
摘要翻译： PCT No.PCT / JP92 / 01581 Sec。 371日期：1993年7月30日 102（e）日期1993年7月30日PCT提交1992年12月3日PCT公布。公开号WO93 / 11569 日本特许公报1993年6月10日。本发明涉及用于磁传感器等的磁阻元件。铁磁磁阻元件薄膜形成为与铝布线的上端部电连接并与其重叠金属在基板上。通过使用350〜450℃的真空热处理，在重叠部分形成Ni-Al系合金。因此，即使在基板上随后通过等离子体CVD形成氮化硅的表面保护膜，合金也能防止铝布线金属的上端部的氮化。因此，可以防止表面被氮化硅膜防止湿气，而不增加磁阻元件薄膜和布线金属之间的接触电阻。可以使用TiW，TiN，Ti，Zr等其他导电性金属代替Ni-Al系合金。此外，表面保护膜也可以是具有不含氮的第一膜的多层膜，例如氧化硅膜，以及形成在第一膜上的第二氮化硅膜。

8. 发明授权

US5618738A Manufacturing method for magnetoresistance elements 失效
标题翻译：磁阻元件的制造方法
公开(公告)号：US5618738A
公开(公告)日：1997-04-08
申请号：US404147
申请日：1995-03-14
申请人： Kenichi Ao , Minoru Murata , Hiroki Noguchi , Yoshimi Yoshino , Hirofumi Uenoyama
发明人： Kenichi Ao , Minoru Murata , Hiroki Noguchi , Yoshimi Yoshino , Hirofumi Uenoyama
IPC分类号： G01R33/09 , H01F10/06 , H01F41/02 , H01F41/30 , H01F41/34 , H01L21/66 , H01L21/8222 , H01L27/06 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/09 , H01F10/06 , H01F41/302 , H01F41/34 , H01L43/12
摘要： A method of manufacturing a magnetoresistance element that can accurately sort out truely defective products from apparently defective products due to the manufacturing processes. Manufacturing processes for MR elements includes a MR element formation process, a magnetic field application process and an electric inspection process. In the magnetic field process, the magnetic field application is limited to a range within 75.degree. to the longitudinal direction of a MR element pattern. By performing the magnetic field application process before the electric inspection process, the anisotropic magnetic field due to a shape magnetic anisotropy of the MR element can be aligned almost in a fixed direction, defective products due to the manufacturing processes can exactly be sorted out from the apparently defective products in the electric inspection process, so that the yield rate can be improved.
摘要翻译：一种制造磁阻元件的方法，其可以由于制造工艺而精确地排除来自明显缺陷的产品的真实缺陷产品。 MR元件的制造过程包括MR元件形成处理，磁场施加处理和电检查过程。在磁场处理中，磁场施加被限制在与MR元件图案的纵向方向成75°的范围内。通过在电检测过程之前执行磁场施加处理，由于MR元件的形状磁各向异性而产生的各向异性磁场可以几乎在固定方向上排列，由于制造过程而导致的缺陷产物可以从在电气检查过程中显然有缺陷的产品，从而可以提高产量。

9. 发明授权

US06661225B2 Revolution detecting device 有权
公开(公告)号：US06661225B2
公开(公告)日：2003-12-09
申请号：US10348187
申请日：2003-01-22
申请人： Inao Toyoda , Yasutoshi Suzuki , Yuichiro Murata , Hirofumi Uenoyama
发明人： Inao Toyoda , Yasutoshi Suzuki , Yuichiro Murata , Hirofumi Uenoyama
IPC分类号： G11B5147
CPC分类号： G01D5/145 , B82Y25/00 , G01P3/487 , G01R33/093
摘要： In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element. The surface portion is formed with S poles and N poles which are alternately arranged. In the revolution detecting device, a magnet is disposed in a vicinity of the element and generating the magnetic field and a direction of the magnetic field is substantially parallel to the Y axis at a center portion of the element. When the revolution member revolves, the S poles and N poles are configured to move substantially in parallel to the X axis on the Y axis determined by the element.

10. 发明授权

US07078238B2 Method for manufacturing magnetic sensor 失效
公开(公告)号：US07078238B2
公开(公告)日：2006-07-18
申请号：US10458631
申请日：2003-06-11
申请人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
发明人： Yuichiro Murata , Inao Toyoda , Yasutoshi Suzuki , Hirofumi Uenoyama , Toshihisa Suzuki , Osamu Mochizuki , Kiyoshi Natsume
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , G01R33/093 , H01L27/22
摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

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