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1. 发明授权

US07473377B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07473377B2
公开(公告)日：2009-01-06
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： B44C1/22
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括制备其表面上具有有机层的工艺对象的步骤，以及用H 2等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

2. 发明申请

US20050103748A1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US20050103748A1
公开(公告)日：2005-05-19
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： H01L21/311 , H01L21/312 , C23F1/00
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括在其表面上制备具有有机层的工艺对象的步骤，以及用H 2 O 3等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

3. 发明申请

US20050101140A1 Method of plasma etching 审中-公开
标题翻译：等离子体蚀刻方法
公开(公告)号：US20050101140A1
公开(公告)日：2005-05-12
申请号：US10949366
申请日：2004-09-27
申请人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
发明人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31116 , H01J37/32165
摘要： A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.
摘要翻译：等离子体蚀刻方法包括以下步骤：将在处理容器中引入的蚀刻气体激发成等离子体，蚀刻气体包括1,1,1,4,4,5,5,5-八氟-2-戊炔，并进行通过膜上的抗蚀剂掩模的开口图案对容纳在处理容器中的目标物体上的膜上的等离子体蚀刻。因此，可以进行具有高抗蚀性和/或抑制蚀刻停止的高选择性的等离子体蚀刻。

4. 发明授权

US07432207B2 Method for etching object to be processed 有权
标题翻译：蚀刻待处理物体的方法
公开(公告)号：US07432207B2
公开(公告)日：2008-10-07
申请号：US10486363
申请日：2002-06-10
申请人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
发明人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/0271 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CH2F2 or CH3F.
摘要翻译：被处理物体具有在SiC膜上形成有SiC膜和有机Si型低介电常数膜的结构。使用由蚀刻气体产生的等离子体并使用有机Si低介电常数膜作为掩模蚀刻SiC膜。蚀刻气体含有CH 2 2 F 2 CH 3或CH 3 F。

5. 发明授权

US07507673B2 Method for etching an object to be processed 有权
标题翻译：蚀刻待处理物体的方法
公开(公告)号：US07507673B2
公开(公告)日：2009-03-24
申请号：US11620501
申请日：2007-01-05
申请人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
发明人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/0271 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.
摘要翻译：要处理的对象具有在SiC膜61上形成的具有SiC膜61和有机Si-低介电常数膜62的结构。使用由蚀刻气体产生的等离子体并使用有机Si低 - 介电常数膜62作为掩模。蚀刻气体含有CH2F2或CH3F。

6. 发明申请

US20120071003A1 Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus 审中-公开
标题翻译：真空处理装置，真空加工方法和微加工装置
公开(公告)号：US20120071003A1
公开(公告)日：2012-03-22
申请号：US13233150
申请日：2011-09-15
申请人： Kazuya Dobashi , Takashi Fuse , Satohiko Hoshino , Takehiko Senoo , Yu Yoshino
发明人： Kazuya Dobashi , Takashi Fuse , Satohiko Hoshino , Takehiko Senoo , Yu Yoshino
IPC分类号： H01L21/31 , C23C14/16 , C23F1/08 , C23C14/34 , C23C16/455 , C23C16/48
CPC分类号： H01L21/306 , C23C14/02 , C23C14/165 , C23C14/568 , H01M4/0421 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M10/0525
摘要： Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.
摘要翻译：公开了一种技术，其中喷嘴部分安装在真空室中，并且硅衬底被保持以面对喷嘴部分的排放孔。例如，从喷嘴部供给ClF 3气体和Ar气体，在真空气氛下从喷嘴部排出混合气体。通过这样做，混合气体绝热膨胀，Ar原子或ClF3分子结合成为气体簇。将气体簇照射到硅衬底的表面而不被电离，结果，硅表面变成多孔状态。然后，通过溅射在单独的真空室41中在硅衬底的表面上生长锂，而不破坏真空。

7. 发明申请

US20080067429A1 STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE 审中-公开
标题翻译：静电电压偏移装置，电子束辐射装置，基板处理装置，基板处理方法及制造基板的方法
公开(公告)号：US20080067429A1
公开(公告)日：2008-03-20
申请号：US11932770
申请日：2007-10-31
申请人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： H01L21/30
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.
摘要翻译：公开了一种用电子束照射处理基板并用电子束处理基板的基板处理装置。基板处理装置包括：电子束发生机构，其产生电子束，第一区域具有多个第一静电偏转装置，其厚度在电子束的行进方向上逐渐增加，第二区域设置在电子束的下游侧第一区域的电子束，并且具有多个第二静电偏转装置，其厚度在电子束的行进方向上几乎相同。基板处理装置还可以包括其厚度在电子束的行进方向上逐渐减小的多个透镜，多个透镜中的至少一个设置在第一区域和第二区域中的每一个中。

8. 发明授权

US06914010B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06914010B2
公开(公告)日：2005-07-05
申请号：US10745519
申请日：2003-12-29
申请人： Jae Young Jeong , Takashi Fuse , Kiwami Fujimoto
发明人： Jae Young Jeong , Takashi Fuse , Kiwami Fujimoto
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76802 , H01L21/31116
摘要： A plasma etching method is performed by plasma etching an SiN layer through a mask layer to form a first wiring portion and a second wiring portion, the first and the second wiring portions having different wiring densities in the etched SiN layer, the mask having two pattern portions respectively corresponding to the first and the second wiring portions. In the plasma etching step, by using an etching gas including fluorocarbon and C2H2F4, the line width variation between the first and the second wiring portions is restrained.
摘要翻译：通过等离子体蚀刻SiN层通过掩模层来形成等离子体蚀刻方法，以形成第一布线部分和第二布线部分，第一和第二布线部分在蚀刻SiN层中具有不同的布线密度，掩模具有两个图案分别对应于第一和第二布线部分的部分。在等离子体蚀刻步骤中，通过使用包括碳氟化合物和C 2 H 2 F 4 F 4的蚀刻气体，第一和第二第二配线部被抑制。

9. 发明授权

US09099298B2 Substrate cleaning apparatus and substrate cleaning method 有权
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US09099298B2
公开(公告)日：2015-08-04
申请号：US13617530
申请日：2012-09-14
申请人： Kazuya Dobashi , Takashi Fuse
发明人： Kazuya Dobashi , Takashi Fuse
IPC分类号： B08B3/02 , H01L21/02 , H01L21/67 , H01L21/311
CPC分类号： H01L21/02052 , H01L21/0206 , H01L21/31133 , H01L21/67051
摘要： A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.
摘要翻译：衬底清洁装置能够从超低温气溶胶喷射中除去基材中更多种污染物，同时避免湿法清洁所固有的技术问题，例如微粗糙度，水印，衬底材料的损失和器件结构的破坏。用于清洁清洁对象物体所粘附的晶片的基板清洗装置包括：一个簇喷射单元，其用一个或多个聚集在一起的清洁制剂分子形成的一个或多个类型的簇喷射晶片;抽吸单元，其吸取通过喷射分离的清洁对象物体清洁剂分子的簇; 以及用于相对于彼此沿晶片W的表面移动所述晶片和所述簇喷射单元的单元，所述晶片W的附着在所述表面上。

10. 发明申请

US20130209666A1 EVAPORATING APPARATUS AND EVAPORATING METHOD 审中-公开
标题翻译：蒸发装置和蒸发方法
公开(公告)号：US20130209666A1
公开(公告)日：2013-08-15
申请号：US13818406
申请日：2011-08-24
申请人： Tomiko Kamada , Hiraku Ishikawa , Yuji Ono , Teruyuki Hayashi , Takashi Fuse , Misako Saito , Toyohiro Kamada , Shimon Otsuki
发明人： Tomiko Kamada , Hiraku Ishikawa , Yuji Ono , Teruyuki Hayashi , Takashi Fuse , Misako Saito , Toyohiro Kamada , Shimon Otsuki
IPC分类号： H05B33/10
CPC分类号： H05B33/10 , C23C14/12 , C23C14/228 , C23C14/544 , C23C14/545 , H01L51/001 , H01L51/56
摘要： An evaporating method is capable of forming a thin film on a substrate by a vapor deposition process. The evaporating method includes measuring a vapor concentration of a material gas discharged to the substrate by a detector; and controlling a film forming condition based on a measurement result from the detector.
摘要翻译：蒸镀法能够通过蒸镀法在基板上形成薄膜。蒸发方法包括通过检测器测量排出到基板的原料气体的蒸汽浓度; 以及基于来自检测器的测量结果来控制成膜条件。

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