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1. 发明授权

US07507673B2 Method for etching an object to be processed 有权
标题翻译：蚀刻待处理物体的方法
公开(公告)号：US07507673B2
公开(公告)日：2009-03-24
申请号：US11620501
申请日：2007-01-05
申请人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
发明人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/0271 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.
摘要翻译：要处理的对象具有在SiC膜61上形成的具有SiC膜61和有机Si-低介电常数膜62的结构。使用由蚀刻气体产生的等离子体并使用有机Si低 - 介电常数膜62作为掩模。蚀刻气体含有CH2F2或CH3F。

2. 发明申请

US20050101140A1 Method of plasma etching 审中-公开
标题翻译：等离子体蚀刻方法
公开(公告)号：US20050101140A1
公开(公告)日：2005-05-12
申请号：US10949366
申请日：2004-09-27
申请人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
发明人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31116 , H01J37/32165
摘要： A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.
摘要翻译：等离子体蚀刻方法包括以下步骤：将在处理容器中引入的蚀刻气体激发成等离子体，蚀刻气体包括1,1,1,4,4,5,5,5-八氟-2-戊炔，并进行通过膜上的抗蚀剂掩模的开口图案对容纳在处理容器中的目标物体上的膜上的等离子体蚀刻。因此，可以进行具有高抗蚀性和/或抑制蚀刻停止的高选择性的等离子体蚀刻。

3. 发明授权

US07432207B2 Method for etching object to be processed 有权
标题翻译：蚀刻待处理物体的方法
公开(公告)号：US07432207B2
公开(公告)日：2008-10-07
申请号：US10486363
申请日：2002-06-10
申请人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
发明人： Takashi Fuse , Kiwamu Fujimoto , Tomoyo Yamaguchi
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/0271 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CH2F2 or CH3F.
摘要翻译：被处理物体具有在SiC膜上形成有SiC膜和有机Si型低介电常数膜的结构。使用由蚀刻气体产生的等离子体并使用有机Si低介电常数膜作为掩模蚀刻SiC膜。蚀刻气体含有CH 2 2 F 2 CH 3或CH 3 F。

4. 发明申请

US20070111530A1 METHOD FOR ETCHING AN OBJECT TO BE PROCESSED 有权
标题翻译：蚀刻要处理的对象的方法
公开(公告)号：US20070111530A1
公开(公告)日：2007-05-17
申请号：US11620501
申请日：2007-01-05
申请人： TAKASHI FUSE , Kiwamu Fujimoto , Tomoyo Yamaguchi
发明人： TAKASHI FUSE , Kiwamu Fujimoto , Tomoyo Yamaguchi
IPC分类号： H01L21/82 , H01L21/302
CPC分类号： H01J37/32082 , H01L21/0271 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.
摘要翻译：要处理的对象具有在SiC膜61上形成的具有SiC膜61和有机Si-低介电常数膜62的结构。使用由蚀刻气体产生的等离子体并使用有机Si低 - 介电常数膜62作为掩模。蚀刻气体含有CH 2 2 F 2 CH 3或CH 3 F。

5. 发明授权

US07473377B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07473377B2
公开(公告)日：2009-01-06
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： B44C1/22
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括制备其表面上具有有机层的工艺对象的步骤，以及用H 2等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

6. 发明申请

US20050103748A1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US20050103748A1
公开(公告)日：2005-05-19
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： H01L21/311 , H01L21/312 , C23F1/00
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括在其表面上制备具有有机层的工艺对象的步骤，以及用H 2 O 3等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

7. 发明授权

US06967171B2 Insulation film etching method 有权
标题翻译：绝缘膜蚀刻方法
公开(公告)号：US06967171B2
公开(公告)日：2005-11-22
申请号：US10653707
申请日：2003-08-28
申请人： Kiwamu Fujimoto , Nobuhiro Wada
发明人： Kiwamu Fujimoto , Nobuhiro Wada
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768 , H01L23/522 , H01L21/302
CPC分类号： H01L21/31116
摘要： The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film.When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.
摘要翻译：根据本发明的绝缘膜蚀刻方法防止了对绝缘膜的蚀刻的暂停，同时确保了对于掩模和基底膜的良好的各向异性（垂直）结构和高选择性。当使用CHF 3 / Ar / N 2 H 2混合气体的第一级等离子体蚀刻结束时，作为清洗气体的Ar气体从Ar气体供给源46与等离子体熄灭，由此处理容器10中的残余氢和氢化合物被吹扫气体旋转，以通过排气口10b通过排气管52排出。当清洗步骤完成时，第二步骤用C 4 N 8 N 8 / Ar / N 2 N 2混合气体进行等离子体蚀刻。

8. 发明申请

US20050112879A1 Insulation film etching method 有权
公开(公告)号：US20050112879A1
公开(公告)日：2005-05-26
申请号：US10653707
申请日：2003-08-28
申请人： Kiwamu Fujimoto , Nobuhiro Wada
发明人： Kiwamu Fujimoto , Nobuhiro Wada
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768 , H01L23/522 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.

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