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1. 发明授权

US07521687B2 Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate 失效
标题翻译：静电偏转装置，电子束照射装置，基板处理装置，基板处理方法以及基板的制造方法
公开(公告)号：US07521687B2
公开(公告)日：2009-04-21
申请号：US11615588
申请日：2006-12-22
申请人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： H01J37/147 , H01J3/26
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.
摘要翻译：公开了一种用电子束照射处理基板并用电子束处理基板的基板处理装置。基板处理装置包括：电子束发生机构，其产生电子束，第一区域具有多个第一静电偏转装置，其厚度在电子束的行进方向上逐渐增加，第二区域设置在电子束的下游侧第一区域的电子束，并且具有多个第二静电偏转装置，其厚度在电子束的行进方向上几乎相同。基板处理装置还可以包括其厚度在电子束的行进方向上逐渐减小的多个透镜，多个透镜中的至少一个设置在第一区域和第二区域中的每一个中。

2. 发明申请

US20080067429A1 STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE 审中-公开
标题翻译：静电电压偏移装置，电子束辐射装置，基板处理装置，基板处理方法及制造基板的方法
公开(公告)号：US20080067429A1
公开(公告)日：2008-03-20
申请号：US11932770
申请日：2007-10-31
申请人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： H01L21/30
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.
摘要翻译：公开了一种用电子束照射处理基板并用电子束处理基板的基板处理装置。基板处理装置包括：电子束发生机构，其产生电子束，第一区域具有多个第一静电偏转装置，其厚度在电子束的行进方向上逐渐增加，第二区域设置在电子束的下游侧第一区域的电子束，并且具有多个第二静电偏转装置，其厚度在电子束的行进方向上几乎相同。基板处理装置还可以包括其厚度在电子束的行进方向上逐渐减小的多个透镜，多个透镜中的至少一个设置在第一区域和第二区域中的每一个中。

3. 发明申请

US20070228275A1 STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE 失效
标题翻译：静电电压偏移装置，电子束辐射装置，基板处理装置，基板处理方法及制造基板的方法
公开(公告)号：US20070228275A1
公开(公告)日：2007-10-04
申请号：US11615485
申请日：2006-12-22
申请人： Takashi FUSE , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi FUSE , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： G21K7/00
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.
摘要翻译：公开了一种用电子束照射处理基板并用电子束处理基板的基板处理装置。基板处理装置包括：电子束发生机构，其产生电子束，第一区域具有多个第一静电偏转装置，其厚度在电子束的行进方向上逐渐增加，第二区域设置在电子束的下游侧第一区域的电子束，并且具有多个第二静电偏转装置，其厚度在电子束的行进方向上几乎相同。基板处理装置还可以包括其厚度在电子束的行进方向上逐渐减小的多个透镜，多个透镜中的至少一个设置在第一区域和第二区域中的每一个中。

4. 发明申请

US20070228285A1 STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE 失效
公开(公告)号：US20070228285A1
公开(公告)日：2007-10-04
申请号：US11615588
申请日：2006-12-22
申请人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： G21K1/08 , H01R43/00
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

5. 发明授权

US07554095B2 Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing substrate 失效
标题翻译：静电偏转装置，电子束照射装置，基板处理装置，基板处理方法以及基板的制造方法
公开(公告)号：US07554095B2
公开(公告)日：2009-06-30
申请号：US11932625
申请日：2007-10-31
申请人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： H01J37/147 , H01J3/26
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.
摘要翻译：公开了一种用电子束照射处理基板并用电子束处理基板的基板处理装置。基板处理装置包括：电子束发生机构，其产生电子束，第一区域具有多个第一静电偏转装置，其厚度在电子束的行进方向上逐渐增加，第二区域设置在电子束的下游侧第一区域的电子束，并且具有多个第二静电偏转装置，其厚度在电子束的行进方向上几乎相同。基板处理装置还可以包括其厚度在电子束的行进方向上逐渐减小的多个透镜，多个透镜中的至少一个设置在第一区域和第二区域中的每一个中。

6. 发明授权

US07550739B2 Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate 失效
公开(公告)号：US07550739B2
公开(公告)日：2009-06-23
申请号：US11615485
申请日：2006-12-22
申请人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
发明人： Takashi Fuse , Tadashi Kotsugi , Kyo Tsuboi , Koji Takeya
IPC分类号： H01J49/22 , H01J49/06
CPC分类号： H01J37/1474 , B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/147 , H01J37/3174 , H01J2237/03 , H01J2237/151 , H01L21/67017 , H01L21/67213 , Y10T29/49117 , Y10T29/49204 , Y10T29/49224 , Y10T29/49885
摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

7. 发明授权

US07033444B1 Plasma processing apparatus, and electrode structure and table structure of processing apparatus 失效
标题翻译：等离子体处理装置，电极结构和加工装置的工作台结构
公开(公告)号：US07033444B1
公开(公告)日：2006-04-25
申请号：US09667770
申请日：2000-09-22
申请人： Mitsuaki Komino , Yasuharu Sasaki , Kyo Tsuboi , Hideaki Amano
发明人： Mitsuaki Komino , Yasuharu Sasaki , Kyo Tsuboi , Hideaki Amano
IPC分类号： C23C16/509 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67109 , C23C16/46 , H01J2237/2002
摘要： An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber (26) in which a vacuum can be formed. An electrode unit (38) has a heater unit (44) therein. A cooling block (40) having a cooling jacket (58) is joined to the electrode unit (38) so as to cool the electrode unit. A heat resistant metal seal member (66A, 66B) seals an electrode-side heat transfer space (62, 64) formed between the electrode unit and the cooling block. Electrode-side heat transfer gas supply means (94) supplies a heat transfer gas to the electrode-side heat transfer space. Accordingly, a sealing characteristic of the electrode-side heat transfer space does not deteriorate even in a high temperature range such as a temperature higher than 200° C. and, for example, a range from 350° C. to 500° C., and the heat transfer gas does not leak.
摘要翻译：一种在等离子体处理装置中使用的电极结构，其对能够形成真空的处理室（26）中的等离子体对待处理的物体（W）进行预定的处理。电极单元（38）中具有加热器单元（44）。具有冷却套（58）的冷却块（40）与电极单元（38）接合，以冷却电极单元。耐热金属密封构件（66A，66B）密封形成在电极单元和冷却块之间的电极侧传热空间（62,64）。电极侧传热气体供给装置（94）向电极侧传热空间供给传热气体。因此，即使在高于200℃的温度和例如350℃至500℃的温度的高温范围内，电极侧传热空间的密封特性也不会劣化，并且传热气体不会泄漏。

8. 发明授权

US5956837A Method of detaching object to be processed from electrostatic chuck 失效
标题翻译：从静电吸盘分离待处理物体的方法
公开(公告)号：US5956837A
公开(公告)日：1999-09-28
申请号：US970241
申请日：1997-11-14
申请人： Iku Shiota , Kyo Tsuboi
发明人： Iku Shiota , Kyo Tsuboi
IPC分类号： H01L21/683 , B23Q3/15 , B25B11/00 , H02N13/00
CPC分类号： H01L21/6833 , B25B11/002 , H02N13/00 , Y10T279/23 , Y10T29/49117 , Y10T29/49998
摘要： After the release of the application of an attraction voltage to an electrostatic chuck that is attracting a semiconductor wafer, the wafer is pushed upward by lifting pins through only a very small projection distance. Immediately after processing has ended, the temperature of the wafer is several tens of degrees higher than that of the electrostatic chuck so that, if the wafer has detached, the temperature of the rear surface thereof will fall toward the original temperature of the electrostatic chuck. If the wafer has not detached, the temperature thereof will not fall. Therefore, a determination is made as to whether the wafer has detached or whether it is being subjected to residual attraction, based on temperature change data obtained for the wafer in combination with the electrostatic chuck, by a temperature sensor after the wafer has been pushed upward by a very small projection distance. If there is residual attraction, wafer transfer is halted. This makes it possible to prevent damage to the wafer that would occur if an unreasonable force is applied to the wafer by the residual attraction when the wafer is being detached from the electrostatic chuck.
摘要翻译：在将吸引电压释放到吸引半导体晶片的静电卡盘之后，通过仅通过非常小的投影距离提升销来将晶片向上推动。处理结束后，晶片的温度立即高于静电卡盘的几十度，如果晶片脱落，则其后表面的温度将下降到静电卡盘的初始温度。如果晶片没有脱落，其温度不会下降。因此，在晶片被向上推动之后，通过温度传感器，基于与静电卡盘相结合的晶片获得的温度变化数据，确定晶片是否脱落，或者是否进行残留吸引通过非常小的投影距离。如果有残留吸引力，晶片转移停止。这使得可以防止当晶片与静电卡盘分离时通过残留吸引力向晶片施加不合理的力时会发生的晶片损坏。

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