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    • 8. 发明授权
    • Method for manufacturing semiconductor device background
    • 制造半导体器件背景的方法
    • US07662727B2
    • 2010-02-16
    • US11979707
    • 2007-11-07
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • H01L21/31H01L21/469
    • H01L21/31645C23C16/405C23C16/45553H01L21/02181H01L21/0228H01L21/3141H01L21/31641
    • To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
    • 在通过将原料和醇交替地流动到处理室来形成薄膜的方法中,为了提高台阶覆盖率和装载效果,不会引起生产量的恶化和成本的增加。 该方法包括:将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环,首先清洗,供给原料和第二次清洗,并通过重复该循环规定次数,在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。
    • 9. 发明申请
    • Method for manufacturing semiconductor device background
    • 制造半导体器件背景的方法
    • US20080132084A1
    • 2008-06-05
    • US11979707
    • 2007-11-07
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • H01L21/316B05C11/00
    • H01L21/31645C23C16/405C23C16/45553H01L21/02181H01L21/0228H01L21/3141H01L21/31641
    • To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
    • 在通过将原料和醇交替地流动到处理室来形成薄膜的方法中,为了提高台阶覆盖率和装载效果,不会引起生产量的恶化和成本的增加。 该方法包括:将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环,首先清洗,供给原料和第二次清洗,并通过重复该循环规定次数,在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。