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1. 发明申请

US20100151126A1 SUBSTRATE COATING METHOD AND SUBSTRATE COATING APPARATUS 审中-公开
标题翻译：基材涂料方法和基材涂料装置
公开(公告)号：US20100151126A1
公开(公告)日：2010-06-17
申请号：US12638418
申请日：2009-12-15
申请人： Tomohiro ISEKI , Kentaro YOSHIHARA , Tomohiro NODA , Kousuke YOSHIHARA
发明人： Tomohiro ISEKI , Kentaro YOSHIHARA , Tomohiro NODA , Kousuke YOSHIHARA
IPC分类号： B05D1/40 , B05C5/02
CPC分类号： B05D1/005 , G03F7/162 , H01L21/6715
摘要： There are provided a substrate coating method and a substrate coating apparatus to achieve the uniformity of a coating-liquid film and the improvement of the yield by inhibiting the bubbles generated during the application of a coating liquid. Also, there are provided a substrate coating method and a substrate coating apparatus to achieve the effective availability of the coating liquid and the uniformity of the coating-liquid film.According to one example, a substrate coating method includes forming a liquid pool of deionized water by rotating the substrate at low speed of a first rotation speed and supplying deionized water to the center of the substrate, mixing the water-soluble coating liquid with the deionized water by supplying the coating liquid to the center of the substrate in a state where the substrate is rotated at the first rotation speed, and forming the coating-liquid film by rotating the substrate at a second rotation speed higher than the first rotation speed.According to another example, a substrate coating method includes forming a liquid pool of the deionized water by rotating the substrate at low speed of a first rotation speed and supplying deionized water to the center of the substrate, mixing the water-soluble coating liquid with the deionized water by supplying the coating liquid to the center of the substrate in a state where the substrate is rotated at the first rotation speed, and forming the coating-liquid film by rotating the substrate at a second rotation speed higher than the first rotation speed. The discharge of the coating liquid (TARC) is set by controlling the time ratio of mixing the coating liquid with the deionized water to forming the coating-liquid film to be within a range of 1:3 to 3:1.
摘要翻译：提供了一种基板涂布方法和基材涂布装置，以实现涂布液膜的均匀性，并且通过抑制涂布液施加期间产生的气泡来提高产率。此外，提供了一种基板涂布方法和基材涂布装置，以实现涂布液的有效可用性和涂布液膜的均匀性。根据一个实例，基材涂布方法包括通过以低速旋转第一转速的方式形成去离子水的液体池，并将去离子水供应到基材的中心，将水溶性涂布液与去离子水在基板以第一转速旋转的状态下将涂布液供给到基板的中心，通过以比第一旋转速度高的第二旋转速度旋转基板来形成涂布液膜而形成涂布液。根据另一个实例，基材涂布方法包括通过以第一转速的低速旋转基板来形成去离子水的液体池，并将去离子水供给到基板的中心，将水溶性涂布液与在基板以第一旋转速度旋转的状态下将涂布液供给到基板的中心，通过以比第一旋转速度高的第二旋转速度旋转基板来形成涂布液膜而形成去离子水。涂布液（TARC）的排出是通过控制涂布液与去离子水的混合时间来形成涂布液膜而设定在1：3〜3：1的范围内。

2. 发明申请

US20090181174A1 METHOD OF TREATING SUBSTRATE AND COMPUTER STORAGE MEDIUM 审中-公开
标题翻译：处理基板和计算机存储介质的方法
公开(公告)号：US20090181174A1
公开(公告)日：2009-07-16
申请号：US12348513
申请日：2009-01-05
申请人： Kousuke YOSHIHARA , Tomohiro Iseki , Koji Takayanagi , Kentaro Yoshihara
发明人： Kousuke YOSHIHARA , Tomohiro Iseki , Koji Takayanagi , Kentaro Yoshihara
IPC分类号： B05D3/02
CPC分类号： H01L21/67248 , G03F7/162 , H01L21/6715
摘要： In the present invention, a substrate is adjusted in temperature such that its contact portion held on a substrate holding unit and its outer peripheral portion outside the contact portion are at different temperatures. The temperature of the contact portion is adjusted such that the contact portion and the substrate holding unit are at the same temperature when the substrate is held on the substrate holding unit. The temperature-adjusted substrate is then held and rotated by the substrate holding unit, and a coating solution is applied onto the rotating substrate to form a coating film with a uniform film thickness, so that even if the number of times of coating treatment for substrates increases, the film thickness of the coating film to be formed on the substrate can be made uniform.
摘要翻译：在本发明中，调整基板的温度，使得其保持在基板保持单元上的接触部分及其外部接触部分外部的温度处于不同的温度。调节接触部分的温度，使得接触部分和基板保持单元在基板被保持在基板保持单元上时处于相同的温度。然后通过基板保持单元将调温后的基板保持旋转，将涂布液涂布在旋转基板上，形成膜厚均匀的涂膜，使得即使基板的涂布处理次数可以使待在基板上形成的涂膜的膜厚均匀。

3. 发明申请

US20070092643A1 RESIST COATING METHOD AND RESIST COATING APPARATUS 有权
标题翻译：电阻涂层方法和耐酸涂装置
公开(公告)号：US20070092643A1
公开(公告)日：2007-04-26
申请号：US11549826
申请日：2006-10-16
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： B05D3/12 , B05C11/00 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then reduces a rotational speed of the target substrate to a second rotational speed lower than the first rotational speed, reduces the rotational speed of the target substrate to a third rotational speed lower than the second rotational speed or until rotational halt to adjust the film thickness of the resist solution, and accelerates the rotation of the target substrate to a fourth rotational speed higher than the third rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀剂涂布方法在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将目标基板的转速降低到低于第一转速的第二转速将目标基板的旋转速度降低到低于第二旋转速度的第三旋转速度，或者直到旋转停止，以调整抗蚀剂溶液的膜厚度，并且将目标基板的旋转加速至高于第三旋转速度以分离抗蚀剂溶液的残留物。

4. 发明申请

US20110146572A1 RESIST COATING METHOD AND RESIST COATING APPARATUS 有权
标题翻译：电阻涂层方法和耐酸涂装置
公开(公告)号：US20110146572A1
公开(公告)日：2011-06-23
申请号：US13038011
申请日：2011-03-01
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： B05C9/02 , B05C11/00 , B05C13/00
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then reduces a rotational speed of the target substrate to a second rotational speed lower than the first rotational speed, reduces the rotational speed of the target substrate to a third rotational speed lower than the second rotational speed or until rotational halt to adjust the film thickness of the resist solution, and accelerates the rotation of the target substrate to a fourth rotational speed higher than the third rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀剂涂布方法在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将目标基板的转速降低到低于第一转速的第二转速将目标基板的旋转速度降低到低于第二旋转速度的第三旋转速度，或者直到旋转停止，以调整抗蚀剂溶液的膜厚度，并且将目标基板的旋转加速至高于第三旋转速度以分离抗蚀剂溶液的残留物。

5. 发明申请

US20120034792A1 COATING TREATMENT METHOD 有权
标题翻译：涂料处理方法
公开(公告)号：US20120034792A1
公开(公告)日：2012-02-09
申请号：US13236750
申请日：2011-09-20
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： H01L21/31
CPC分类号： H01L21/6715 , G03F7/162
摘要： The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a first number of rotations. The substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, consumption of the resist solution can be suppressed and a high in-plane uniformity can be obtained for the film thickness of the resist film.
摘要翻译：本发明在旋转基板的同时将溶剂供给到基板的前表面。基板被加速旋转到第一转数，并且在加速旋转期间以及以第一转数旋转时，将抗蚀剂溶液供应到基板的中心部分。基板减速旋转到第二转数，并且在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。根据本发明，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。

6. 发明申请

US20110005459A1 RESIST COATING APPARATUS 有权
标题翻译：电阻涂装
公开(公告)号：US20110005459A1
公开(公告)日：2011-01-13
申请号：US12877187
申请日：2010-09-08
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： H01L21/46 , B05C11/08 , H01L21/683
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating apparatus supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀涂层装置在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后使基板的旋转减速到低于第一转速的第二转速，或直到旋转停止，随着转速变得更接近于第二转速或转动停止，减速步骤中的减速度变小，并且将基板的旋转加速到高于第二转速的第三转速，以使其脱离抗蚀剂溶液的残留物。

7. 发明申请

US20080069948A1 COATING TREATMENT METHOD 有权
标题翻译：涂料处理方法
公开(公告)号：US20080069948A1
公开(公告)日：2008-03-20
申请号：US11851747
申请日：2007-09-07
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： B05D3/12
CPC分类号： H01L21/6715 , G03F7/162
摘要： The present invention supplies a solvent to the front surface of a substrate while rotating the substrate. Subsequently, the substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at the first number of rotations. Thereafter, the substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, in application of the resist solution by spin coating, the consumption of the resist solution can be suppressed, and a high in-plane uniformity can be obtained for the film thickness of the resist film.
摘要翻译：本发明在旋转衬底的同时向衬底的前表面提供溶剂。随后，基板被加速旋转到第一转数，并且在加速旋转和第一转数旋转期间，将抗蚀剂溶液供应到基板的中心部分。此后，基板减速旋转到第二转数，在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。根据本发明，通过旋涂的抗蚀剂溶液的应用，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。

8. 发明申请

US20070092642A1 RESIST COATING METHOD AND RESIST COATING APPARATUS 有权
标题翻译：电阻涂层方法和耐酸涂装置
公开(公告)号：US20070092642A1
公开(公告)日：2007-04-26
申请号：US11549793
申请日：2006-10-16
申请人： Kousuke YOSHIHARA , Tomohiro Iseki
发明人： Kousuke YOSHIHARA , Tomohiro Iseki
IPC分类号： B05D3/12 , B05C11/02
CPC分类号： H01L21/6715 , G03F7/162
摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.
摘要翻译：抗蚀剂涂布方法在以第一旋转速度旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将基板的旋转减速到低于第一转速的第二转速，或直到旋转停止，随着转速变得更接近于第二转速或转动停止，减速步骤中的减速度变小，并且将基板的旋转加速到高于第二转速的第三转速，以使其脱离抗蚀剂溶液的残留物。

9. 发明申请

US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD 有权
标题翻译：开发设备和开发方法
公开(公告)号：US20100330508A1
公开(公告)日：2010-12-30
申请号：US12877612
申请日：2010-09-08
申请人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
发明人： Atsushi OOKOUCHI , Taro YAMAMOTO , Hirofumi TAKEGUCHI , Hideharu KYOUDA , Kousuke YOSHIHARA
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译：显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。此外，可以减少基板上的显影液的厚度，从而可以节省显影液。

10. 发明申请

US20090250079A1 SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS 有权
标题翻译：基板清洗方法和基板清洗装置
公开(公告)号：US20090250079A1
公开(公告)日：2009-10-08
申请号：US12400419
申请日：2009-03-09
申请人： Kousuke YOSHIHARA , Yuichi YOSHIDA , Taro YAMAMOTO
发明人： Kousuke YOSHIHARA , Yuichi YOSHIDA , Taro YAMAMOTO
IPC分类号： B08B7/04
CPC分类号： G03F7/168 , B08B3/024 , G03F7/3021 , H01L21/67051
摘要： The present invention relates to a substrate cleaning method for cleaning a substrate whose static contact angle with respect to water is 85 degrees or more. The substrate cleaning method includes a step in which the substrate is held horizontally by a substrate holder in such a manner that a central part of the substrate and a central part in rotation correspond to each other; a step in which, while the substrate holder is being rotated about a vertical axis, a cleaning liquid is discharged from a cleaning-liquid nozzle to the central part of the substrate and is spread over all the surface of the substrate by a centrifugal force; a step in which, while the substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a distance between an interface on a side of a to-be-discharged position of the gas in the to-be-discharged position of the cleaning liquid and an interface on a side of the to-be-discharged position of the cleaning liquid in the to-be-discharged position of the gas is set between 9 mm and 15 mm; and a step in which, while the substrate holder is being continuously rotated, the to-be-discharged position of the cleaning liquid is moved toward a periphery of the substrate at a speed lower than a speed at which the dried area is spread outward.
摘要翻译：本发明涉及一种清洗相对于水的静态接触角为85度以上的基板的基板清洗方法。基板清洗方法包括以下步骤：基板由基板保持器水平地保持，使得基板的中心部分和旋转中心部分彼此对应; 在衬底保持器围绕垂直轴线旋转的同时，清洗液从清洗液喷嘴排出到基板的中心部分，并通过离心力分散在基板的所有表面上; 在基板保持器持续旋转的同时，将基板上的清洗液的排出位置变更为离开基板的中心部的偏心位置，从而从气体喷嘴到基板的中心部分，以便在待处理气体的待排出位置的一侧的界面之间的距离处于这样的条件下形成清洁液体的干燥区域，清洁液体的排出位置和待排出位置的清洗液体的待排出位置一侧的界面设定在9mm〜15mm之间; 以及在衬底保持器持续旋转的同时，清洗液的排出位置以比干燥区域向外扩展的速度朝向衬底的周边移动的步骤。

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