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1. 发明授权

US06174779B1 Method for manufacturing a lateral bipolar transistor 失效
标题翻译：横向双极晶体管的制造方法
公开(公告)号：US06174779B1
公开(公告)日：2001-01-16
申请号：US09267775
申请日：1999-03-15
申请人： Tomoaki Shino , Takashi Yamada , Makoto Yoshimi , Shigeru Kawanaka , Hideaki Nii , Kazumi Inoh , Tsuneaki Fuse , Sadayuki Yoshitomi , Mamoru Terauchi
发明人： Tomoaki Shino , Takashi Yamada , Makoto Yoshimi , Shigeru Kawanaka , Hideaki Nii , Kazumi Inoh , Tsuneaki Fuse , Sadayuki Yoshitomi , Mamoru Terauchi
IPC分类号： H01L218228
CPC分类号： H01L29/66265 , H01L21/84 , H01L27/1203 , H01L29/7317
摘要： In a lateral bipolar transistor, its emitter region, base region, link base region, and so forth, are made in self alignment with side walls of masks by using partly overlapping two mask patterns. Therefore, not relying on the mask alignment accuracy, these regions are made in a precisely controlled positional relation. Thus, the lateral bipolar transistor, thus obtained, is reduced in parasitic resistance of the base and parasitic junction capacitance between the emitter and the base, and alleviated in variance of characteristics caused by fluctuation of the length of a link base region, length of the emitter-base junction and relative positions of the emitter and the collector, and can be manufactured with a high reproducibility.
摘要翻译：在横向双极晶体管中，通过使用部分重叠的两个掩模图案，其发射极区域，基极区域，链路基极区域等与掩模的侧壁自对准。因此，不依赖于掩模对准精度，这些区域被精确控制位置关系。因此，如此获得的横向双极晶体管的基极的寄生电阻和发射极与基极之间的寄生结电容减小，并且由于链路基极区域的长度的波动引起的特性的变化减轻，发射极 - 基极结和发射极和集电极的相对位置，并且可以以高再现性制造。

2. 发明授权

US06376897B2 Lateral bipolar transistor formed on an insulating layer 失效
标题翻译：形成在绝缘层上的侧面双极晶体管
公开(公告)号：US06376897B2
公开(公告)日：2002-04-23
申请号：US09314114
申请日：1999-05-19
申请人： Takashi Yamada , Hideaki Nii , Makoto Yoshimi , Tomoaki Shino , Kazumi Inoh , Shigeru Kawanaka , Tsuneaki Fuse , Sadayuki Yoshitomi
发明人： Takashi Yamada , Hideaki Nii , Makoto Yoshimi , Tomoaki Shino , Kazumi Inoh , Shigeru Kawanaka , Tsuneaki Fuse , Sadayuki Yoshitomi
IPC分类号： H01L2900
CPC分类号： H01L29/1008 , H01L29/7317
摘要： In a bipolar transistor improved to exhibit an excellent high-frequency property by decreasing the width of the intrinsic base with without increasing the base resistance, an emitter region, intrinsic base region and collector region are closely aligned on an insulating layer, and the intrinsic base region and the collector region make a protrusion projecting upward from the substrate surface. The protrusion has a width wider than the width of the intrinsic base region.
摘要翻译：在通过在不增加基极电阻的情况下减小本征基极的宽度而改善为显示优异的高频特性的双极晶体管中，发射极区域，本征基极区域和集电极区域在绝缘层上紧密对准，并且本征基极区域和集电区域形成从基板表面向上突出的突起。突起的宽度比本征基区宽度宽。

3. 发明授权

US06693328B1 Semiconductor device formed in a semiconductor layer provided on an insulating film 失效
标题翻译：半导体器件形成在设置在绝缘膜上的半导体层中
公开(公告)号：US06693328B1
公开(公告)日：2004-02-17
申请号：US10303546
申请日：2002-11-25
申请人： Shigeru Kawanaka , Hideaki Nii
发明人： Shigeru Kawanaka , Hideaki Nii
IPC分类号： H01L2712
CPC分类号： H01L29/78615 , H01L29/42384 , H01L29/4908 , Y10S257/901
摘要： A semiconductor device includes an insulating film provided on a semiconductor substrate and a semiconductor layer provided on the insulating film. An element separating insulating film separates element area. A first gate insulating film is provided on the semiconductor layer in the element area. A gate electrode is provided on the first gate insulating film. Source/drain diffusion layers are formed in the semiconductor layer sandwiching a channel area under the gate electrode therebetween. A potential applying section inducing a leak current which controls the potential of the semiconductor layer comprises a second gate insulating film provided on the semiconductor layer in the element area and a conductive film provided on the second gate insulating film and connected to the gate electrode. The potential applying section is configured so that a leak current through the second gate insulating film is larger than a leak current through the first gate insulating film.
摘要翻译：半导体器件包括设置在半导体衬底上的绝缘膜和设置在绝缘膜上的半导体层。分离绝缘膜的元件分离元件区域。第一栅极绝缘膜设置在元件区域中的半导体层上。栅电极设置在第一栅绝缘膜上。源极/漏极扩散层形成在半导体层中，夹着栅极之下的沟道区域。诱导控制半导体层电位的漏电流的电位施加部包括设置在元件区域的半导体层上的第二栅极绝缘膜和设置在第二栅极绝缘膜上并连接到栅电极的导电膜。电位施加部被配置为使得通过第二栅极绝缘膜的漏电流大于通过第一栅极绝缘膜的漏电流。

4. 发明授权

US5434440A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5434440A
公开(公告)日：1995-07-18
申请号：US68529
申请日：1993-05-28
申请人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata
发明人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata
IPC分类号： H01L21/033 , H01L21/225 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/78 , H01L29/06
CPC分类号： H01L29/6659 , H01L21/0338 , H01L21/2255 , H01L21/28035 , H01L21/28123 , H01L21/823814 , H01L27/0928 , H01L29/0847 , H01L29/41783 , H01L29/42376 , H01L29/66492 , H01L29/6656 , H01L29/66628 , H01L29/7833 , Y10S257/90 , Y10S438/965
摘要： A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.
摘要翻译：扩散层用作源极和漏极。其形成包括位于第一扩散层和沟道区之间的深第一扩散层和浅第二扩散层。在第二扩散区域中，载流子深度方向的分布具有在峰值处浓度大于5×10 18 cm -3的轮廓，并且与深度小于0.04μm的半导体衬底的载流子浓度相对应 m。由于第二扩散层具有高浓度，所以可以抑制短沟道效应。作为第二扩散区域，使用诸如杂质掺杂硅酸盐玻璃的固相扩散源。

5. 发明授权

US08009192B2 System and method for sensing geometric and photometric attributes of a scene with multiplexed illumination and solid states optical devices 有权
标题翻译：用多路复用照明和固态光学器件感测场景的几何和光度属性的系统和方法
公开(公告)号：US08009192B2
公开(公告)日：2011-08-30
申请号：US11435703
申请日：2006-05-17
申请人： Ramesh Raskar , Hideaki Nii , Jay W. Summet , Yong Zhao , Paul H. Dietz , Jonathan Westhues , Michael Noland , Erich Bruns , Shree Nayar , Vlad Branzoi
发明人： Ramesh Raskar , Hideaki Nii , Jay W. Summet , Yong Zhao , Paul H. Dietz , Jonathan Westhues , Michael Noland , Erich Bruns , Shree Nayar , Vlad Branzoi
IPC分类号： H04N7/18 , H04N5/222 , G02B13/16 , G06K19/06 , H04N5/225
CPC分类号： G01J1/42 , G01N21/55 , G01N2021/557 , G06K9/2036 , G06K9/3216 , G06K2009/3225 , G06T7/73 , G06T2207/10016 , G06T2207/30204
摘要： An optical receiver is arranged at a location in a scene. The optical receiver includes a photo sensor configured to detect spatio-temporal modulated optical signals directed at the scene from a set of spatially dispersed optical transmitters, and to convert the optical signals from each of the optical transmitters to a corresponding electronic signal. The electronic signals can be analyzed to determine geometric properties of the location in the scene.
摘要翻译：光接收器布置在场景中的位置。光接收器包括光传感器，其被配置为从一组空间分散的光发射器检测针对场景的时空调制光信号，并将来自每个光发射机的光信号转换成相应的电子信号。可以分析电子信号以确定场景中的位置的几何特性。

6. 发明申请

US20070268363A1 System and method for sensing geometric and photometric attributes of a scene with multiplexed illumination and solid states optical devices 有权
标题翻译：用多路复用照明和固态光学器件感测场景的几何和光度属性的系统和方法
公开(公告)号：US20070268363A1
公开(公告)日：2007-11-22
申请号：US11435703
申请日：2006-05-17
申请人： Ramesh Raskar , Hideaki Nii , Jay W. Summet , Yong Zhao , Paul H. Dietz , Jonathan Westhues , Michael Noland , Erich Bruns , Shree Nayar , Vlad Branzoi
发明人： Ramesh Raskar , Hideaki Nii , Jay W. Summet , Yong Zhao , Paul H. Dietz , Jonathan Westhues , Michael Noland , Erich Bruns , Shree Nayar , Vlad Branzoi
IPC分类号： H04N7/18 , G08B19/00 , G08B23/00
CPC分类号： G01J1/42 , G01N21/55 , G01N2021/557 , G06K9/2036 , G06K9/3216 , G06K2009/3225 , G06T7/73 , G06T2207/10016 , G06T2207/30204
摘要： An optical receiver is arranged at a location in a scene. The optical receiver includes a photo sensor configured to detect spatio-temporal modulated optical signals directed at the scene from a set of spatially dispersed optical transmitters, and to convert the optical signals from each of the optical transmitters to a corresponding electronic signal. The electronic signals can be analyzed to determine geometric properties of the location in the scene.
摘要翻译：光接收器布置在场景中的位置。光接收器包括光传感器，其被配置为从一组空间分散的光发射器检测针对场景的时空调制光信号，并将来自每个光发射机的光信号转换成相应的电子信号。可以分析电子信号以确定场景中的位置的几何特性。

7. 发明申请

US20050131617A1 Data collecting system and data transmitting method 审中-公开
标题翻译：数据采集系统和数据传输方法
公开(公告)号：US20050131617A1
公开(公告)日：2005-06-16
申请号：US10985967
申请日：2004-11-12
申请人： Hideaki Nii , Ichiro Kawabuchi
发明人： Hideaki Nii , Ichiro Kawabuchi
IPC分类号： G06G7/70 , G08C15/00 , G08C15/06 , G08C19/00 , H04L12/28
CPC分类号： G08C15/06
摘要： A data collecting system includes a data collecting device and plural data processing devices connected to the data collecting device by a cascade connection. For example, each of the data processing devices individually executes an A/D conversion and other data process, and adds data obtained by the data process to a data transmitting signal to transmit it to the subsequent cascade-connection data processing device in sequence. The data processing device at the head of the cascade connection generates the data transmitting signal including a data processing period and a communication period, and transmits it to the subsequent data processing device. Each of the data processing devices executes the data process in the data processing period, and transmits data obtained by the data process to the subsequent data processing device in the communication period on the basis of the data transmitting signal.
摘要翻译：数据采集系统包括数据采集装置和通过级联连接连接到数据采集装置的多个数据处理装置。例如，每个数据处理装置分别执行A / D转换和其他数据处理，并且将通过数据处理获得的数据附加到数据发送信号，以将其依次发送到后续级联连接数据处理装置。级联连接头部的数据处理装置生成包含数据处理期间和通信期间的数据发送信号，发送给后续的数据处理装置。数据处理装置中的每一个在数据处理期间执行数据处理，并且根据数据发送信号将通过数据处理获得的数据发送到通信期间的后续数据处理装置。

8. 发明授权

US06633069B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06633069B2
公开(公告)日：2003-10-14
申请号：US09081613
申请日：1998-05-20
申请人： Hideaki Nii , Chihiro Yoshino
发明人： Hideaki Nii , Chihiro Yoshino
IPC分类号： H01L2976
CPC分类号： H01L21/8249 , H01L29/41708
摘要： A bipolar transistor has metal silicide as a base lead-out electrode instead of conventional polysilicon, and the metal silicide film extends to an edge of an etching stopper layer, to reduce an emitter resistance and restrain an occurrence of an emitter plug effect. Such bipolar transistor can be utilized in a CMOS semiconductor device. In this case, (1) commonly using a process of providing an active base region, a base lead-out electrode and a collector lead-out electrode of the bipolar transistor and a process of providing gate electrodes a MOS field effect transistor, (2) commonly using a process of adding a p-type impurity into the active base region and the base lead-out electrode and a process of executing an ion-implantation for providing high-concentration impurity diffused layers of pMOS transistors, (3) commonly using a process of providing an etching stopper layer and a process of providing side wall insulating films of gate electrodes, and (4) commonly using a silicidation process of the base lead-out electrode and the collector lead-out electrode and a silicidation process of electrodes of MOS transistors. In other embodiment of the bipolar transistor, a single insulating film exist between the base layer and the emitter electrode in the peripheral of the emitter opening. By this construction, the etching stopper film is not necessary resulting in reducing the base resistance.
摘要翻译：双极晶体管具有金属硅化物作为基极引出电极而不是常规的多晶硅，并且金属硅化物膜延伸到蚀刻停止层的边缘，以降低发射极电阻并抑制发射极插塞效应的发生。这种双极晶体管可以用在CMOS半导体器件中。在这种情况下，（1）通常使用提供有源基极区域的工艺，双极晶体管的基极引出电极和集电极引出电极以及提供栅电极MOS场效应晶体管的工艺（2 ）通常使用将p型杂质添加到有源基极区域和基极引出电极中的过程以及执行用于提供pMOS晶体管的高浓度杂质扩散层的离子注入的过程，（3）通常使用提供蚀刻停止层的工艺和提供栅电极的侧壁绝缘膜的工艺，以及（4）通常使用基极引出电极和集电极引出电极的硅化工艺和电极的硅化工艺的MOS晶体管。在双极晶体管的另一个实施例中，在发射极开口周边的基极层和发射极之间存在单个绝缘膜。通过这种结构，不需要蚀刻阻挡膜，导致降低基极电阻

9. 发明授权

US5698881A MOSFET with solid phase diffusion source 失效
标题翻译：具有固相扩散源的MOSFET
公开(公告)号：US5698881A
公开(公告)日：1997-12-16
申请号：US353240
申请日：1994-12-02
申请人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata , Tatsuya Ooguro , Claudio Fiegna
发明人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata , Tatsuya Ooguro , Claudio Fiegna
IPC分类号： H01L21/033 , H01L21/225 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/76
CPC分类号： H01L29/6659 , H01L21/0338 , H01L21/2255 , H01L21/28035 , H01L21/28123 , H01L21/823814 , H01L27/0928 , H01L29/0847 , H01L29/42376 , H01L29/66628
摘要： A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j �nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff �nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.
摘要翻译： MOS型半导体器件具有长度为170nm（0.17μm）以下的栅极，沟道附近的源极和漏极扩散层的结深度为22nm以下，表面上的杂质浓度在源极和漏极扩散层中形成1020cm-3以上。这种结构使用从950℃到1050℃的热范围的固相扩散和/或通过灰化或蚀刻使栅极宽度变窄来获得。其他MOS型半导体器件的特征在于源极和漏极扩散层区域中的结深度xj [nm]与有效沟道长度Leff [nm]之间的关系由Leff> 0.69×j-6.17确定。

10. 发明申请

US20070268366A1 System and method for sensing geometric and photometric attributes of a scene with multiplexed illumination and solid state optical devices 审中-公开
标题翻译：用于利用多路复用照明和固态光学器件感测场景的几何和光度属性的系统和方法
公开(公告)号：US20070268366A1
公开(公告)日：2007-11-22
申请号：US11495946
申请日：2006-07-28
申请人： Ramesh Raskar , Hideaki Nii
发明人： Ramesh Raskar , Hideaki Nii
IPC分类号： H04N7/18 , H04N5/33
CPC分类号： G01J1/42 , G01N21/55 , G01N2021/557 , G01S5/16 , G06K9/2036 , G06K9/3216 , G06K2009/3225 , G06T7/73 , G06T2207/10016 , G06T2207/30204 , H04N5/222 , H04N5/2256 , H04N5/33
摘要： An optical emitter and an optical sensor are arranged at locations in a scene. A physical mask is arranged between the emitter and sensor to modulate directional electromagnetic signals from the emitter spatially. The modulated signals are analyzed to determine geometric properties at the location in the scene.
摘要翻译：光发射器和光学传感器布置在场景中的位置处。在发射器和传感器之间布置物理掩模，以调制来自发射器的定向电磁信号在空间上。分析调制信号以确定场景中位置的几何特性。

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