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1. 发明授权

US06251560B1 Photoresist compositions with cyclic olefin polymers having lactone moiety 有权
标题翻译：具有内酯部分的环烯烃聚合物的光致抗蚀剂组合物
公开(公告)号：US06251560B1
公开(公告)日：2001-06-26
申请号：US09566395
申请日：2000-05-05
申请人： Thomas I. Wallow , Robert D. Allen , Phillip Joe Brock , Richard Anthony DiPietro , Hiroshi Ito , Hoa Dao Truong , Pushkara Rao Varanasi
发明人： Thomas I. Wallow , Robert D. Allen , Phillip Joe Brock , Richard Anthony DiPietro , Hiroshi Ito , Hoa Dao Truong , Pushkara Rao Varanasi
IPC分类号： B03F7004
CPC分类号： G03F7/0045 , G03F7/039
摘要： Acid-catalyzed positive photoresist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form photoresist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing cyclic olefin polymer having a cyclic olefin monomer having a lactone moiety, the monomer having no oxygen atoms intervening between the lactone moiety and a ring of the cyclic olefin. Preferred lactone moieties are spirolactones (having a 5 or 6 membered ring) directly to a cyclic olefin ring.
摘要翻译：通过使用含有具有环烯烃的环状烯烃聚合物的抗蚀剂组合物可以实现可用193nm辐射（和可能的其它辐射）成像并且可显影以形成改进的显影特性和改善的耐蚀刻性的光致抗蚀剂结构的酸性催化的正性光致抗蚀剂组合物具有内酯部分的单体，所述单体不含有介于内酯部分和环状烯烃环之间的氧原子。优选的内酯部分是直接与环烯烃环一起的螺内酯（具有5或6元环）。

2. 发明授权

US06420503B1 Norbornene sulfonamide polymers 有权
标题翻译：降冰片烯磺酰胺聚合物
公开(公告)号：US06420503B1
公开(公告)日：2002-07-16
申请号：US09497846
申请日：2000-02-03
申请人： Saikumar Jayaraman , Richard Vicari , Larry F. Rhodes , Pushkara Rao Varanasi , Thomas I. Wallow , Ratnam Sooriyakumaran , Robert D. Allen , Richard A. DiPietro , Hiroshi Ito , Juliann Opitz
发明人： Saikumar Jayaraman , Richard Vicari , Larry F. Rhodes , Pushkara Rao Varanasi , Thomas I. Wallow , Ratnam Sooriyakumaran , Robert D. Allen , Richard A. DiPietro , Hiroshi Ito , Juliann Opitz
IPC分类号： C08F2806
CPC分类号： C08F32/08 , C08G61/08
摘要： The invention is directed to polymers containing a repeating unit derived from a norbornene sulfonamide. These may be addition polymers which include copolymers with one or more comonomers such as norbornene, ethylene, an acrylate or sulfur dioxide or carbon monoxide. Said monomers may be polymerized using single or multicomponent Group VIII catalysts. The norbornene sulfonamides can also form ROMP polymers using known metathesis catalysts. Preferably the ROMP polymers may be hydrogenated to give more stable polymers.
摘要翻译：本发明涉及含有衍生自降冰片烯磺酰胺的重复单元的聚合物。这些可以是加成聚合物，其包括与一种或多种共聚单体如降冰片烯，乙烯，丙烯酸酯或二氧化硫或一氧化碳的共聚物。所述单体可以使用单组分或多组分VIII族催化剂进行聚合。降冰片烯磺酰胺也可以使用已知的复分解催化剂形成ROMP聚合物。优选地，ROMP聚合物可以被氢化以得到更稳定的聚合物。

3. 发明授权

US6165673A Resist composition with radiation sensitive acid generator 失效
标题翻译：抗辐射敏感产酸剂组成
公开(公告)号：US6165673A
公开(公告)日：2000-12-26
申请号：US813245
申请日：1997-03-07
申请人： Gregory Breyta , Richard Anthony DiPietro , Donald Clifford Hofer , Hiroshi Ito , Robert David Allen , Juliann Opitz , Thomas I. Wallow
发明人： Gregory Breyta , Richard Anthony DiPietro , Donald Clifford Hofer , Hiroshi Ito , Robert David Allen , Juliann Opitz , Thomas I. Wallow
IPC分类号： G03F7/004 , G03F7/039 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/122 , Y10S430/126
摘要： The invention relates to a polymeric, radiation-sensitive resist composition comprising (i) iodonium sulfonate radiation sensitive acid generator; (ii) a polymer; and (iii) an acid labile compound.
摘要翻译：本发明涉及一种聚合物，辐射敏感性抗蚀剂组合物，其包含（i）碘磺酸盐辐射敏感性酸产生剂; （ii）聚合物; 和（iii）酸不稳定化合物。

4. 发明授权

US06391521B1 Resist compositions containing bulky anhydride additives 有权
标题翻译：含有大量酸酐添加剂的抗蚀剂组合物
公开(公告)号：US06391521B1
公开(公告)日：2002-05-21
申请号：US09639784
申请日：2000-08-16
申请人： Hiroshi Ito , Pushkara Rao Varanasi
发明人： Hiroshi Ito , Pushkara Rao Varanasi
IPC分类号： G03F7039
CPC分类号： G03F7/0395 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and are developable to form resist structures of high resolution and high etch resistance are enabled by the use of a combination of (a) an imaging polymer comprising a monomer selected from the group consisting of a cyclic olefin, an acrylate and a methacrylate, (b) a radiation-sensitive acid generator, and (c) a bulky anhydride additive. The imaging polymer is preferably a cyclic olefin polymer.
摘要翻译：可以用193nm辐射成像并可显影以形成高分辨率和高耐蚀刻性的抗蚀剂结构的酸催化正性抗蚀剂组合物通过使用（a）包含选自以下的单体的成像聚合物的组合来实现：的环烯烃，丙烯酸酯和甲基丙烯酸酯，（b）辐射敏感性酸产生剂，和（c）大体积的酸酐添加剂。成像聚合物优选为环状烯烃聚合物。

5. 发明授权

US06627391B1 Resist compositions containing lactone additives 有权
标题翻译：含有内酯添加剂的抗蚀剂组合物
公开(公告)号：US06627391B1
公开(公告)日：2003-09-30
申请号：US09639785
申请日：2000-08-16
申请人： Hiroshi Ito , Pushkara Rao Varanasi
发明人： Hiroshi Ito , Pushkara Rao Varanasi
IPC分类号： G03C556
CPC分类号： G03F7/0395 , G03F7/0045
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and are developable to form resist structures of high resolution and high etch resistance are enabled by the use of a combination of (a) an imaging polymer comprising a monomer selected from the group consisting of a cyclic olefin, an acrylate and a methacrylate, (b) a radiation-sensitive acid generator, and (c) a lactone additive. The lactone additive preferably contains at least 10 carbon atoms and more preferably at least one saturated alicyclic moiety. The imaging polymer is preferably a cyclic olefin polymer.
摘要翻译：可以用193nm辐射成像并可显影以形成高分辨率和高耐蚀刻性的抗蚀剂结构的酸催化正性抗蚀剂组合物通过使用（a）包含选自以下的单体的成像聚合物的组合来实现：的环烯烃，丙烯酸酯和甲基丙烯酸酯，（b）辐射敏感性酸产生剂，和（c）内酯添加剂。内酯添加剂优选含有至少10个碳原子，更优选含有至少一个饱和脂环部分。成像聚合物优选为环状烯烃聚合物。

6. 发明授权

US06610456B2 Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions 有权
公开(公告)号：US06610456B2
公开(公告)日：2003-08-26
申请号：US09794466
申请日：2001-02-26
申请人： Robert David Allen , Phillip Joe Brock , Hiroshi Ito , Gregory Michael Wallraff
发明人： Robert David Allen , Phillip Joe Brock , Hiroshi Ito , Gregory Michael Wallraff
IPC分类号： G03F7039
CPC分类号： G03F7/0046 , C08F212/14 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/108
摘要： Copolymers prepared by radical polymerization of a fluorine-containing aromatic monomer and an acrylate-based comonomer that may or may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

7. 发明授权

US06509134B2 Norbornene fluoroacrylate copolymers and process for the use thereof 有权
标题翻译：降冰片烯氟代丙烯酸酯共聚物及其使用方法
公开(公告)号：US06509134B2
公开(公告)日：2003-01-21
申请号：US09771149
申请日：2001-01-26
申请人： Hiroshi Ito , Dolores Carlotta Miller , Phillip Joe Brock , Gregory Michael Wallraff
发明人： Hiroshi Ito , Dolores Carlotta Miller , Phillip Joe Brock , Gregory Michael Wallraff
IPC分类号： G03F7039
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0395 , G03F7/0758 , Y10S430/108 , Y10S430/111
摘要： Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供了新的降冰片烯氟代丙烯酸酯共聚物。聚合物可用于平版印刷光刻胶组合物，特别是化学增强抗蚀剂。在优选的实施方案中，聚合物对深紫外（DUV）辐射基本上是透明的，即波长小于250nm的辐射，包括157nm，193nm和248nm辐射，因此可用于DUV平版光刻胶组合物。还提供了使用该组合物在衬底上产生抗蚀剂图像的方法，即在集成电路等的制造中。

8. 发明授权

US06548219B2 Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions 有权
标题翻译：取代的降冰片烯氟代丙烯酸酯共聚物及其在平版光刻胶组合物中的用途
公开(公告)号：US06548219B2
公开(公告)日：2003-04-15
申请号：US09771262
申请日：2001-01-26
申请人： Hiroshi Ito , Phillip Joe Brock , Gregory Michael Wallraff
发明人： Hiroshi Ito , Phillip Joe Brock , Gregory Michael Wallraff
IPC分类号： G03F7039
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0382 , Y10S430/108 , Y10S430/111
摘要： Copolymers prepared by radical polymerization of a substituted norbornene monomer and a fluoromethacrylic acid, fluoromethacrylonitrile, or fluoromethacrylate comonomer are provided. The polymers are useful in lithographic phtoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供了通过取代的降冰片烯单体和氟代甲基丙烯酸，氟甲基丙烯腈或氟代甲基丙烯酸酯共聚单体的自由基聚合制备的共聚物。聚合物可用于光刻抗蚀剂组合物，特别是化学增强抗蚀剂。在优选的实施方案中，聚合物对深紫外（DUV）辐射基本上是透明的，即波长小于250nm的辐射，包括157nm，193nm和248nm辐射，因此可用于DUV平版光刻胶组合物。还提供了使用该组合物在衬底上产生抗蚀剂图像的方法，即在集成电路等的制造中。

9. 发明授权

US06730452B2 Lithographic photoresist composition and process for its use 有权
标题翻译：平版光刻胶组合物及其使用方法
公开(公告)号：US06730452B2
公开(公告)日：2004-05-04
申请号：US09771261
申请日：2001-01-26
申请人： Phillip Joe Brock , Daniel Joseph Dawson , Hiroshi Ito , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Daniel Joseph Dawson , Hiroshi Ito , Gregory Michael Wallraff
IPC分类号： G03F7039
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/108
摘要： A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译：提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。在优选的实施方案中，组合物对深紫外辐射即波长小于250nm（包括157nm，193nm和248nm辐射）的辐射基本上是透明的，并具有改进的灵敏度和分辨率。组合物包含氟化乙烯基聚合物，特别是氟化甲基丙烯酸酯，氟化甲基丙烯腈或氟化甲基丙烯酸，以及光酸产生剂。聚合物可以是均聚物或共聚物。还提供了使用该组合物在衬底上产生抗蚀剂图像的方法，即在集成电路等的制造中。

10. 发明申请

US20120291668A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY 有权
标题翻译：基于芳族乙烯基的反向色调和闪光曝光
公开(公告)号：US20120291668A1
公开(公告)日：2012-11-22
申请号：US13564812
申请日：2012-08-02
申请人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
发明人： Richard Anthony DiPietro , Mark Whitney Hart , Frances Anne Houle , Hiroshi Ito
IPC分类号： C09D5/00
CPC分类号： C08F2/50 , B82Y10/00 , B82Y40/00 , C08F216/125 , G03F7/0002 , G03F7/0045 , G03F7/038
摘要： A molding composition and a method of forming a pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.
摘要翻译：成型组合物和形成图案的方法。该方法包括在基材上形成芳族二乙烯基醚的模塑组合物的模塑层; 将模板压入成型层，模板具有浮雕图案，成型层在浮雕图案中填充空隙，模板不接触基板; 将成型层暴露于光化辐射，光化辐射将成型层转化成具有对应于浮雕图案的厚而薄的区域的固化模塑层; 删除模板; 用填充材料填充浮雕图案的薄区域; 除去未被回填材料保护的成型层的区域以暴露基底的区域; 在衬底的暴露区域中形成沟槽; 并移除任何剩余的成型层和回填材料。可以在模塑层和基材之间使用转移层。

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