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1. 发明授权

US08043687B2 Structure including a graphene layer and method for forming the same 失效
标题翻译：包括石墨烯层的结构及其形成方法
公开(公告)号：US08043687B2
公开(公告)日：2011-10-25
申请号：US12253158
申请日：2008-10-16
申请人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
发明人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
IPC分类号： B32B9/00 , B32B19/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/02 , C30B25/02 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , Y10T428/24562 , Y10T428/24612 , Y10T428/30
摘要： A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.
摘要翻译：本文公开了一种形成石墨烯层的方法。该方法包括在衬底上建立绝缘层，使得形成暴露衬底表面的至少一个种子区域。将种子区域中的种子材料暴露于含碳前体气体，由此引发种子材料上的石墨烯层的成核，并且能够沿着绝缘层的表面的至少一部分横向生长石墨烯层。

2. 发明申请

US20100003462A1 Structure Including A Graphene Layer And Method For Forming The Same 失效
标题翻译：包括石墨烯层的结构及其形成方法
公开(公告)号：US20100003462A1
公开(公告)日：2010-01-07
申请号：US12253158
申请日：2008-10-16
申请人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
发明人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
IPC分类号： B32B9/00 , B32B3/26 , C30B23/04
CPC分类号： C30B29/02 , C30B25/02 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , Y10T428/24562 , Y10T428/24612 , Y10T428/30
摘要： A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.
摘要翻译：本文公开了一种形成石墨烯层的方法。该方法包括在衬底上建立绝缘层，使得形成暴露衬底表面的至少一个种子区域。将种子区域中的种子材料暴露于含碳前体气体，由此引发种子材料上的石墨烯层的成核，并且能够沿着绝缘层的表面的至少一部分横向生长石墨烯层。

3. 发明授权

US07872318B2 Sensing devices and methods for forming the same 失效
标题翻译：传感装置及其形成方法
公开(公告)号：US07872318B2
公开(公告)日：2011-01-18
申请号：US11584103
申请日：2006-10-20
申请人： Duncan R. Stewart , Amir A. Yasseri , R. Stanley Williams , Theodore I. Kamins
发明人： Duncan R. Stewart , Amir A. Yasseri , R. Stanley Williams , Theodore I. Kamins
IPC分类号： H01L27/14
CPC分类号： B82Y20/00 , G01N21/658 , H01L31/035227
摘要： A sensing device includes an optical cavity having two substantially opposed reflective surfaces. At least one nanowire is operatively disposed in the optical cavity. A plurality of metal nanoparticles is established on the at least one nanowire.
摘要翻译：感测装置包括具有两个基本上相对的反射表面的光学腔。至少一个纳米线可操作地设置在光腔中。在至少一个纳米线上建立多个金属纳米颗粒。

4. 发明授权

US08787064B2 Programmable bipolar electronic device 有权
标题翻译：可编程双极电子器件
公开(公告)号：US08787064B2
公开(公告)日：2014-07-22
申请号：US13130805
申请日：2009-01-13
申请人： Theodore I. Kamins , R. Stanley Williams
发明人： Theodore I. Kamins , R. Stanley Williams
IPC分类号： G11C11/00
CPC分类号： G11C13/0002 , G11C13/003 , G11C2213/52 , G11C2213/53 , H01L27/101 , H01L27/1026 , H01L45/08 , H01L45/1206 , H01L45/122 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) containing a first dopant species; emitter (320), collector (310), and a base electrodes (330, 340) which are in contact with the memristive matrix (350); and a mobile dopant species contained within a central region (360) contiguous with the base electrodes (330, 340), the mobile dopant species moving within the memristive matrix (350) in response to a programming electrical field. A method of configuring and using a memristive device (300) includes: applying a programming electrical field across a memristive matrix (350) such that a mobile dopant species creates a central doped region (360) which bisects the memristive matrix (350); and applying a control voltage to the central doped region (360) to regulate current flow between an emitter electrode (320) and a collector electrode (310).
摘要翻译：用于调节电信号的可配置忆阻装置（300）包括含有第一掺杂剂物质的忆阻矩阵（350）发射极（320），集电极（310）以及与所述忆阻矩阵（350）接触的基极（330,340）; 以及包含在与所述基极（330,340）相邻的中心区域（360）内的移动掺杂剂物质，所述移动掺杂剂物质响应于编程电场在所述忆阻矩阵（350）内移动。一种配置和使用忆阻器件（300）的方法包括：跨越忆阻矩阵（350）施加编程电场，使得移动掺杂物物质形成将所述忆阻矩阵（350）平分的中心掺杂区域（360）; 以及向所述中心掺杂区域（360）施加控制电压以调节发射极电极（320）和集电极电极（310）之间的电流。

5. 发明授权

US06773616B1 Formation of nanoscale wires 失效
标题翻译：纳米线的形成
公开(公告)号：US06773616B1
公开(公告)日：2004-08-10
申请号：US10033408
申请日：2001-12-26
申请人： Yong Chen , Douglas A. A. Ohlberg , Theodore I. Kamins , R. Stanley Williams
发明人： Yong Chen , Douglas A. A. Ohlberg , Theodore I. Kamins , R. Stanley Williams
IPC分类号： B44C122
CPC分类号： C30B23/02 , C30B25/02 , C30B29/605 , Y10S977/888
摘要： Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer beneath a major surface thereof; (b) growing self-assembled nanowires on the surface of the etchable layer; and (c) etching the etchable layer anisotropically down to the insulating layer, using the self-assembled nanowires as a mask. The self-assembled nanowires may be removed or left. In either event, nanowires of the second composition are formed. The method enables the formation of one-dimensional crystalline nanowires with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality. Further, the method of the present invention avoids traditional lithography methods, minimizes environmental toxic chemicals usage, simplifies the manufacturing processes, and allows the formation of high-quality one-dimensional nanowires over large areas.
摘要翻译：可以将第一组合物的自组织或自组装的纳米线用作用于制造第二组合物的纳米线的蚀刻掩模。形成这种纳米线的方法包括：（a）提供第二组合物的可蚀刻层，并在其主表面下方具有掩埋绝缘层; （b）在可蚀刻层的表面上生长自组装纳米线; 和（c）使用自组装纳米线作为掩模，各向异性地将可蚀刻层蚀刻到绝缘层。自组装纳米线可以被去除或留下。在任一情况下，形成第二组合物的纳米线。该方法能够形成具有纳米尺度的宽度和高度的一维结晶纳米线，以及在具有高晶体质量的某些晶体方向上对准的微米尺度的长度。此外，本发明的方法避免了传统的光刻方法，使环境有毒化学品的使用最小化，简化了制造工艺，并且允许在大面积上形成高质量的一维纳米线。

6. 发明申请

US20130027776A1 CONTROLLING PHASE RESPONSE IN A SUB-WAVELENGTH GRATING LENS 有权
标题翻译：在亚波长光栅镜中控制相位响应
公开(公告)号：US20130027776A1
公开(公告)日：2013-01-31
申请号：US13640348
申请日：2010-04-13
申请人： Wei Wu , R. Stanley Williams , Jingjing Li , Theodore I. Kamins , Marco Fiorentino
发明人： Wei Wu , R. Stanley Williams , Jingjing Li , Theodore I. Kamins , Marco Fiorentino
IPC分类号： G02B5/18 , B05D3/10 , B05D5/06
CPC分类号： G02B5/1809 , B05D5/06 , G02B5/18 , G02B5/1828 , G02B5/1861
摘要： A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension.
摘要翻译：具有受控相位响应的亚波长光栅装置包括具有线宽，线厚度，线周期和线间隔的光栅层，其被选择以产生从光栅反射的光束的不同部分的相位变化中的第一级控制层。该装置还包括固定到光栅层的衬底，其产生从光栅层反射的光束的不同部分的相位变化的第二级控制，第二级控制是在水平方向上完成衬底的突然步进尺寸，在水平尺寸上斜化基底，或改变水平尺寸的折射率。

7. 发明授权

US07359048B2 Raman signal-enhancing structures and devices 有权
标题翻译：拉曼信号增强结构和器件
公开(公告)号：US07359048B2
公开(公告)日：2008-04-15
申请号：US11413910
申请日：2006-04-28
申请人： Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
发明人： Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658 , G01J3/44
摘要： Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
摘要翻译：拉曼系统包括辐射源，辐射检测器和拉曼器件或信号增强结构。拉曼器件包括耦合到空腔的可调谐谐振腔和拉曼信号增强结构。空腔包括第一反射构件，第二反射构件和设置在反射构件之间的电光材料。电光材料表现出响应于所施加的电场而变化的折射率。拉曼信号增强结构包括具有主表面的基本平坦的拉曼信号增强材料层，从主表面延伸的支撑结构和包括设置在支撑结构的端部上的拉曼信号增强材料的基本上平面的构件与拉曼信号增强材料层相对。支撑结构将平面构件的至少一部分与拉曼信号增强材料层分开小于约五十纳米的选定距离。

8. 发明申请

US20120025343A1 THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE 审中-公开
标题翻译：具有可变交叉部分连接结构的热电装置
公开(公告)号：US20120025343A1
公开(公告)日：2012-02-02
申请号：US13262799
申请日：2009-04-15
申请人： Philip J. Kuekes , Alexandre M. Bratkovski , Hans S. Cho , Nathaniel J. Quitoriano , Theodore I. Kamins , R. Stanley Williams
发明人： Philip J. Kuekes , Alexandre M. Bratkovski , Hans S. Cho , Nathaniel J. Quitoriano , Theodore I. Kamins , R. Stanley Williams
IPC分类号： H01L29/66 , H01L35/34
CPC分类号： H01L35/32
摘要： A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section.
摘要翻译：具有可变横截面连接结构的热电装置包括第一电极，第二电极和连接第一电极和第二电极的连接结构。连接结构具有第一部分和第二部分。第二部分的宽度大于第一部分的宽度，并且第一部分的宽度小于大致等于通过第一部分的声子平均自由程的宽度。

9. 发明授权

US07924413B2 Nanowire-based photonic devices 有权
标题翻译：基于纳米线的光子器件
公开(公告)号：US07924413B2
公开(公告)日：2011-04-12
申请号：US12074133
申请日：2008-02-29
申请人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
发明人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
IPC分类号： G01N21/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/06 , H01L33/08 , H01S5/341 , H01S5/4031
摘要： Embodiments of the present invention are related to nanowire-based devices that can be configured and operated as modulators, chemical sensors, and light-detection devices. In one aspect, a nanowire-based device includes a reflective member, a resonant cavity surrounded by at least a portion of the reflective member, and at least one nanowire disposed within the resonant cavity. The nanowire includes at least one active segment selectively disposed along the length of the nanowire to substantially coincide with at least one antinode of light resonating within the cavity. The active segment can be configured to interact with the light resonating within the cavity.
摘要翻译：本发明的实施例涉及可以配置和操作为调制器，化学传感器和光检测装置的基于纳米线的器件。在一个方面，基于纳米线的器件包括反射部件，由反射部件的至少一部分包围的谐振腔以及设置在谐振腔内的至少一个纳米线。纳米线包括至少一个有源区段，沿着纳米线的长度选择性地设置，以与腔内谐振的至少一个光波导基本重合。活动段可以被配置为与腔内共振的光相互作用。

10. 发明申请

US20080218740A1 Nanowire-based photonic devices 有权
标题翻译：基于纳米线的光子器件
公开(公告)号：US20080218740A1
公开(公告)日：2008-09-11
申请号：US12074133
申请日：2008-02-29
申请人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
发明人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
IPC分类号： G01N21/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/06 , H01L33/08 , H01S5/341 , H01S5/4031
摘要： Embodiments of the present invention are related to nanowire-based devices that can be configured and operated as modulators, chemical sensors, and light-detection devices. In one aspect, a nanowire-based device includes a reflective member, a resonant cavity surrounded by at least a portion of the reflective member, and at least one nanowire disposed within the resonant cavity. The nanowire includes at least one active segment selectively disposed along the length of the nanowire to substantially coincide with at least one antinode of light resonating within the cavity. The active segment can be configured to interact with the light resonating within the cavity.
摘要翻译：本发明的实施例涉及可以配置和操作为调制器，化学传感器和光检测装置的基于纳米线的器件。在一个方面，基于纳米线的器件包括反射部件，由反射部件的至少一部分包围的谐振腔以及设置在谐振腔内的至少一个纳米线。纳米线包括至少一个有源区段，沿着纳米线的长度选择性地设置，以与腔内谐振的至少一个光波导基本重合。活动段可以被配置为与腔内共振的光相互作用。

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