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1. 发明授权

US06656573B2 Method to grow self-assembled epitaxial nanowires 失效
标题翻译：生长自组装外延纳米线的方法
公开(公告)号：US06656573B2
公开(公告)日：2003-12-02
申请号：US10008058
申请日：2001-11-13
申请人： Yong Chen , R. Stanley Williams , Douglas A. A. Ohlberg
发明人： Yong Chen , R. Stanley Williams , Douglas A. A. Ohlberg
IPC分类号： C30B2910
CPC分类号： C30B23/02 , C30B25/02 , C30B29/605 , Y10S977/763 , Y10T428/12674 , Y10T428/24802 , Y10T428/24917 , Y10T428/24942 , Y10T428/249921
摘要： Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other.
摘要翻译：提供了自组装的纳米线，其包括在第二结晶组合物的基底上形成的第一晶体组合物的纳米线。两种结晶材料的特征在于不对称晶格失配，其中在两种材料之间的界面中，第一种材料与第二种材料具有紧密的晶格匹配（在任何方向上），并且在所有其它主要材料中具有大的晶格失配晶体方向与第二种材料。这允许外延晶体在第一方向上的不受限制的生长，但是限制另一方的宽度。

2. 发明授权

US06773616B1 Formation of nanoscale wires 失效
标题翻译：纳米线的形成
公开(公告)号：US06773616B1
公开(公告)日：2004-08-10
申请号：US10033408
申请日：2001-12-26
申请人： Yong Chen , Douglas A. A. Ohlberg , Theodore I. Kamins , R. Stanley Williams
发明人： Yong Chen , Douglas A. A. Ohlberg , Theodore I. Kamins , R. Stanley Williams
IPC分类号： B44C122
CPC分类号： C30B23/02 , C30B25/02 , C30B29/605 , Y10S977/888
摘要： Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer beneath a major surface thereof; (b) growing self-assembled nanowires on the surface of the etchable layer; and (c) etching the etchable layer anisotropically down to the insulating layer, using the self-assembled nanowires as a mask. The self-assembled nanowires may be removed or left. In either event, nanowires of the second composition are formed. The method enables the formation of one-dimensional crystalline nanowires with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality. Further, the method of the present invention avoids traditional lithography methods, minimizes environmental toxic chemicals usage, simplifies the manufacturing processes, and allows the formation of high-quality one-dimensional nanowires over large areas.
摘要翻译：可以将第一组合物的自组织或自组装的纳米线用作用于制造第二组合物的纳米线的蚀刻掩模。形成这种纳米线的方法包括：（a）提供第二组合物的可蚀刻层，并在其主表面下方具有掩埋绝缘层; （b）在可蚀刻层的表面上生长自组装纳米线; 和（c）使用自组装纳米线作为掩模，各向异性地将可蚀刻层蚀刻到绝缘层。自组装纳米线可以被去除或留下。在任一情况下，形成第二组合物的纳米线。该方法能够形成具有纳米尺度的宽度和高度的一维结晶纳米线，以及在具有高晶体质量的某些晶体方向上对准的微米尺度的长度。此外，本发明的方法避免了传统的光刻方法，使环境有毒化学品的使用最小化，简化了制造工艺，并且允许在大面积上形成高质量的一维纳米线。

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