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1. 发明申请

US20100044343A1 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20100044343A1
公开(公告)日：2010-02-25
申请号：US12545541
申请日：2009-08-21
申请人： Hiroshi Tomita , Linan Ji , Hisashi Okuchi , Tatsuhiko Koide , Hiroyasu Iimori , Hidekazu Hayashi
发明人： Hiroshi Tomita , Linan Ji , Hisashi Okuchi , Tatsuhiko Koide , Hiroyasu Iimori , Hidekazu Hayashi
IPC分类号： C03C15/00
CPC分类号： C03C15/00 , H01L21/67028 , H01L21/67126
摘要： A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.
摘要翻译：一种用于处理其上形成有多个图案的基板的基板处理装置，具有耐化学品的第一室，并且用该化学品清洁该基板; 设置在第一室的上方或下方的第二室具有比第一室更高的耐压性，并且对基板进行超临界干燥; 以及设置在第一和第二室之间并可以打开/关闭的门单元。

2. 发明申请

US20110220152A1 SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING APPARATUS 审中-公开
标题翻译：超临界干燥方法和超临界干燥装置
公开(公告)号：US20110220152A1
公开(公告)日：2011-09-15
申请号：US12963952
申请日：2010-12-09
申请人： Yukiko KITAJIMA , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Tatsuhiko Koide
发明人： Yukiko KITAJIMA , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Tatsuhiko Koide
IPC分类号： B08B3/00 , F26B21/00
CPC分类号： F26B3/00 , H01L21/67028 , H01L21/67034
摘要： According to one embodiment, a substrate having a plurality of adjacent patterns on one surface thereof is cleaned by cleaning liquid. Subsequently, after the cleaning liquid is displaced with pure water, the pure water is displaced with displacement liquid. Under a condition that the displacement liquid among the patterns does not vaporize, the displacement liquid not contributing to prevention of collapse of the patterns is removed. After the displacement liquid is removed, the substrate is held in supercritical fluid and the displacement liquid among the patterns is displaced with the supercritical fluid. After the displacement liquid among the patterns is displaced with the supercritical fluid, the supercritical fluid adhering to the substrate is vaporized.
摘要翻译：根据一个实施例，在其一个表面上具有多个相邻图案的基板通过清洗液体被清洁。随后，在用纯水置换清洗液之后，用置换液体移动纯水。在图案中的位移液不会蒸发的条件下，不利于防止图案塌陷的位移液被去除。在取出置换液后，将基板保持在超临界流体中，并且图案中的置换液体与超临界流体一起移位。在图案中的位移液体被超临界流体置换之后，附着在基板上的超临界流体被蒸发。

3. 发明授权

US08097538B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08097538B2
公开(公告)日：2012-01-17
申请号：US12715727
申请日：2010-03-02
申请人： Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
发明人： Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
IPC分类号： H01L21/461
CPC分类号： H01L21/31144 , H01L21/0206 , H01L21/02071 , H01L21/32139 , H01L27/101 , H01L27/24 , Y10S438/906
摘要： A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.
摘要翻译：图案化硅构件层上的金属构件层。在金属构件层的表面上形成侧壁膜。图案化硅构件层以形成包括硅构件层和金属构件层的结构，其表面被侧壁膜覆盖。在清洁结构表面之后，在结构表面干燥之前，在结构的表面上形成防水保护膜。

4. 发明申请

US20100267233A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100267233A1
公开(公告)日：2010-10-21
申请号：US12715727
申请日：2010-03-02
申请人： Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
发明人： Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
IPC分类号： H01L21/321
CPC分类号： H01L21/31144 , H01L21/0206 , H01L21/02071 , H01L21/32139 , H01L27/101 , H01L27/24 , Y10S438/906
摘要： A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.
摘要翻译：图案化硅构件层上的金属构件层。在金属构件层的表面上形成侧壁膜。图案化硅构件层以形成包括硅构件层和金属构件层的结构，其表面被侧壁膜覆盖。在清洁结构表面之后，在结构表面干燥之前，在结构的表面上形成防水保护膜。

5. 发明授权

US07985683B2 Method of treating a semiconductor substrate 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US07985683B2
公开(公告)日：2011-07-26
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/312
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

6. 发明申请

US20110143541A1 APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：US20110143541A1
公开(公告)日：2011-06-16
申请号：US12886427
申请日：2010-09-20
申请人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/308 , B08B3/08 , B08B3/02
CPC分类号： H01L21/0206 , H01L21/02043 , H01L21/02211 , H01L21/31116 , H01L21/32135 , H01L21/67028
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.
摘要翻译：在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。去除单元除去留下凸起图案的防水保护膜。

7. 发明申请

US20100075504A1 METHOD OF TREATING A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US20100075504A1
公开(公告)日：2010-03-25
申请号：US12574543
申请日：2009-10-06
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

8. 发明申请

US20090311874A1 METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：处理半导体衬底表面的方法
公开(公告)号：US20090311874A1
公开(公告)日：2009-12-17
申请号：US12257493
申请日：2008-10-24
申请人： Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
发明人： Hiroshi Tomita , Hiroyasu Iimori , Hisashi Okuchi , Tatsuhiko Koide , Linan Ji
IPC分类号： H01L21/31
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.
摘要翻译：处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板，通过使用纯水去除化学溶液，在半导体基板的表面上形成防水保护膜，冲洗通过使用纯水对半导体衬底进行干燥，并干燥半导体衬底。

9. 发明授权

US08435903B2 Semiconductor substrate surface treatment method 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US08435903B2
公开(公告)日：2013-05-07
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro Ogawa , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

10. 发明申请

US20110269313A1 SEMICONDUCTOR SUBSTRATE SURFACE TREATMENT METHOD 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US20110269313A1
公开(公告)日：2011-11-03
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/3065
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

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