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1. 发明申请

US20110143541A1 APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：US20110143541A1
公开(公告)日：2011-06-16
申请号：US12886427
申请日：2010-09-20
申请人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/308 , B08B3/08 , B08B3/02
CPC分类号： H01L21/0206 , H01L21/02043 , H01L21/02211 , H01L21/31116 , H01L21/32135 , H01L21/67028
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.
摘要翻译：在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。去除单元除去留下凸起图案的防水保护膜。

2. 发明申请

US20110139192A1 SURFACE TREATMENT APPARATUS AND METHOD FOR SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：表面处理装置和半导体基板的方法
公开(公告)号：US20110139192A1
公开(公告)日：2011-06-16
申请号：US12887332
申请日：2010-09-21
申请人： Tatsuhiko KOIDE , Shinsuke KIMURA , Yoshihiro OGAWA , Hisashi OKUCHI , Hiroshi TOMITA
发明人： Tatsuhiko KOIDE , Shinsuke KIMURA , Yoshihiro OGAWA , Hisashi OKUCHI , Hiroshi TOMITA
IPC分类号： B08B3/00
CPC分类号： H01L21/02057 , H01L21/3065 , H01L21/31 , H01L21/31116 , H01L21/324 , H01L21/67028
摘要： In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.
摘要翻译：在一个实施例中，用于半导体衬底的表面处理装置包括保持单元，第一供应单元，第二供应单元，第三供应单元，干燥处理单元和拆卸单元。保持单元保持其上形成有凸起图案的表面的半导体衬底。第一供给单元向半导体基板的表面供给化学溶液，进行清洗和氧化。第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。第三供给单元向半导体基板的表面供给防水剂，在凸形图案的表面上形成防水保护膜。干燥处理单元干燥半导体基板。去除单元在保持凸起图案的同时去除防水保护膜。

3. 发明申请

US20110269313A1 SEMICONDUCTOR SUBSTRATE SURFACE TREATMENT METHOD 有权
标题翻译：半导体衬底表面处理方法
公开(公告)号：US20110269313A1
公开(公告)日：2011-11-03
申请号：US13069164
申请日：2011-03-22
申请人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
发明人： Yoshihiro OGAWA , Shinsuke Kimura , Tatsuhiko Koide , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/3065
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译：在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜并释放抗蚀剂。此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。

4. 发明申请

US20120088357A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120088357A1
公开(公告)日：2012-04-12
申请号：US13238997
申请日：2011-09-21
申请人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura
发明人： Yoshihiro OGAWA , Tatsuhiko Koide , Shinsuke Kimura
IPC分类号： H01L21/265 , H01L21/308
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/265 , H01L21/31133 , H01L27/1052
摘要： A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.
摘要翻译：公开了制造半导体器件的方法。该方法形成半导体器件，该半导体器件包括具有第一区域的工件结构和与形成在其中的第一区域相邻的第二区域。第一区域包括第一图案，第二区域包括具有比第一图案至少更大的图案宽度或更小的纵横比的第二图案。该方法包括：通过在其顶部提供具有小于第一接触角的第二接触角的第二膜，通过提供在其顶部具有第一接触角的第一膜和第二图案来形成第一图案; 用化学液体清洗第一和第二区域; 用漂洗液冲洗净化的第一和第二区域; 并干燥漂洗的第一和第二区域。

5. 发明申请

US20130196512A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20130196512A1
公开(公告)日：2013-08-01
申请号：US13595076
申请日：2012-08-27
申请人： Tatsuhiko KOIDE , Yoshihiro OGAWA , Yoshihiro UOZUMI
发明人： Tatsuhiko KOIDE , Yoshihiro OGAWA , Yoshihiro UOZUMI
IPC分类号： H01L21/306 , B08B3/00
CPC分类号： H01L21/0206 , H01L21/32139 , H01L21/67028 , H01L27/11521 , H01L29/40114
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can rinse a substrate with water, a plurality of protruding patterns being formed on the substrate. The method can dry the substrate by removing water from a recess between the protruding patterns by irradiating microwaves.
摘要翻译：根据一个实施例，公开了一种用于制造半导体器件的方法。该方法可以用水冲洗基材，在基材上形成多个突起图案。通过照射微波，该方法可以通过从突出图案之间的凹槽中除去水来干燥基底。

6. 发明申请

US20090250431A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20090250431A1
公开(公告)日：2009-10-08
申请号：US12404681
申请日：2009-03-16
申请人： Minako INUKAI , Yoshihiro OGAWA , Hiroshi TOMITA , Hiroyasu IIMORI , Yuji YAMADA , Yoshihiro UOZUMI , Linan JI , Kaori UMEZAWA , Hisadhi OKUCHI
发明人： Minako INUKAI , Yoshihiro OGAWA , Hiroshi TOMITA , Hiroyasu IIMORI , Yuji YAMADA , Yoshihiro UOZUMI , Linan JI , Kaori UMEZAWA , Hisadhi OKUCHI
IPC分类号： C23F1/00 , B08B3/08 , C23F1/08 , B08B13/00
CPC分类号： H01L21/02082 , H01L21/02057
摘要： A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid.
摘要翻译：在其上形成有彼此相邻的多个图案的基板的处理的基板处理方法具有：将第一处理液体供给到干燥后的基板的主面，并且形成有图案的第一处理液粘附在基材的主表面上; 以及在所述第一处理液体粘附到所述基板的主表面的状态下，将具有比所述第一处理液体更高的表面张力的第二处理液供给到所述基板的主表面，以处理所述基板的所述主表面，处理液体。

7. 发明申请

US20110067734A1 APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于清洁半导体基板的装置和方法
公开(公告)号：US20110067734A1
公开(公告)日：2011-03-24
申请号：US12845371
申请日：2010-07-28
申请人： Yoshihiro OGAWA , Hajime Onoda , Hiroshi Kawamoto
发明人： Yoshihiro OGAWA , Hajime Onoda , Hiroshi Kawamoto
IPC分类号： B08B3/00
CPC分类号： H01L21/67028 , B08B3/022 , C11D11/0047 , H01L21/02057
摘要： A method of cleaning a semiconductor substrate includes cleaning a semiconductor substrate with a cleaning liquid, rinsing the semiconductor substrate with rinse water after the semiconductor substrate has been cleaned, and drying the semiconductor substrate after the semiconductor substrate has been rinsed. A temperature of the rinse water is set to 70° C. or above in the rinsing, and the rinse water is set so as to be acidic.
摘要翻译：清洗半导体衬底的方法包括用清洗液清洗半导体衬底，在半导体衬底被清洁之后用冲洗水冲洗半导体衬底，以及在半导体衬底被冲洗之后干燥半导体衬底。冲洗水的温度在漂洗中设定为70℃以上，冲洗水设定为酸性。

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