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1. 发明授权

US08017421B2 Method of manufacturing semiconductor light emitting device 失效
公开(公告)号：US08017421B2
公开(公告)日：2011-09-13
申请号：US11889126
申请日：2007-08-09
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

2. 发明授权

US07935554B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07935554B2
公开(公告)日：2011-05-03
申请号：US12407361
申请日：2009-03-19
申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
发明人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
IPC分类号： H01L21/302
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L33/12 , H01L33/22
摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
摘要翻译：提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。光输出效率增加，半导体发光器件的内部缺陷减小。

3. 发明授权

US07736925B2 Method of fabricating nitride-based semiconductor laser diode 失效
标题翻译：制造氮化物基半导体激光二极管的方法
公开(公告)号：US07736925B2
公开(公告)日：2010-06-15
申请号：US11448800
申请日：2006-06-08
申请人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
发明人： Tan Sakong , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.
摘要翻译：提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域，包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

4. 发明授权

US07682852B2 Method of manufacturing semiconductor laser device including light shield plate 失效
标题翻译：制造包括遮光板的半导体激光装置的方法
公开(公告)号：US07682852B2
公开(公告)日：2010-03-23
申请号：US11889121
申请日：2007-08-09
申请人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
发明人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0286 , H01S5/2027 , H01S5/22 , H01S2301/18
摘要： Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
摘要翻译：提供一种制造具有遮光膜的半导体激光器件的方法，包括：通过在衬底上沉积第一覆盖层，有源层和第二覆盖层来形成发光结构; 在发光结构的发光面上沉积遮光膜和保护膜; 去除与包括第一包层以上的发光结构的发光面的区域相对应的遮光膜; 并去除保护层。

5. 发明授权

US07483463B2 Ridge-waveguide semiconductor laser diode 有权
标题翻译：脊波导半导体激光二极管
公开(公告)号：US07483463B2
公开(公告)日：2009-01-27
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要翻译：提供了具有改进的电流注入结构的脊 - 波导半导体激光二极管。脊波导半导体激光二极管包括：基板; 形成在所述基板上的下部多半导体层; 形成在下多层半导体层上的有源层; 具有脊部并形成在有源层上的上多层半导体层; 以及形成在所述上多层半导体层上的上电极，其中所述上电极覆盖所述脊部的至少一个侧表面。

6. 发明授权

US07406111B2 Semiconductor laser diode and method for manufacturing the same 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US07406111B2
公开(公告)日：2008-07-29
申请号：US11340590
申请日：2006-01-27
申请人： Youn-joon Sung , Tae-hoon Jang
发明人： Youn-joon Sung , Tae-hoon Jang
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.
摘要翻译：在半导体激光二极管中，第一材料层，有源层和第二材料层依次形成在基板上，脊部和第一突出部分在垂直于有源层的方向上形成在第二材料层上所述第一突起部分形成在所述脊部的一侧，形成与所述脊部的顶面接触的第二电极层，在所述第二材料层的整个表面上形成限流层，第二电极层，在第一突起部分上方的电流限制层的表面上形成保护层，并且具有不同于电流限制层的蚀刻选择性，并且在电流限制层上形成接合金属层，与第二电极层电连接的保护层。

7. 发明申请

US20070041413A1 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US20070041413A1
公开(公告)日：2007-02-22
申请号：US11580093
申请日：2006-10-13
申请人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

8. 发明申请

US20060118803A1 Semiconductor light emitting diode having high efficiency and method of manufacturing the same 有权
标题翻译：具有高效率的半导体发光二极管及其制造方法
公开(公告)号：US20060118803A1
公开(公告)日：2006-06-08
申请号：US11294403
申请日：2005-12-06
申请人： Jeong-wook Lee , Youn-joon Sung
发明人： Jeong-wook Lee , Youn-joon Sung
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/22 , H01L33/007 , H01L33/12
摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
摘要翻译：提供了一种在基板上形成纹理结构的半导体发光二极管。在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

9. 发明授权

US08895331B2 Semiconductor light emitting diode having high efficiency and method of manufacturing the same 有权
标题翻译：具有高效率的半导体发光二极管及其制造方法
公开(公告)号：US08895331B2
公开(公告)日：2014-11-25
申请号：US12627714
申请日：2009-11-30
申请人： Jeong-wook Lee , Youn-joon Sung
发明人： Jeong-wook Lee , Youn-joon Sung
IPC分类号： H01L21/00 , H01L33/00 , H01L33/22 , H01L33/12
CPC分类号： H01L33/22 , H01L33/007 , H01L33/12
摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
摘要翻译：提供了一种在基板上形成纹理结构的半导体发光二极管。在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

10. 发明授权

US08114691B2 Semiconductor light emitting device having textured structure and method of manufacturing the same 有权
标题翻译：具有纹理结构的半导体发光器件及其制造方法
公开(公告)号：US08114691B2
公开(公告)日：2012-02-14
申请号：US12630880
申请日：2009-12-04
申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek
发明人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/025 , H01L33/20 , H01L33/22
摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
摘要翻译：提供具有纹理结构的半导体发光二极管及其制造方法。半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层第一半导体层和中间层。

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