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1. 发明授权

US07744445B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US07744445B2
公开(公告)日：2010-06-29
申请号：US11665001
申请日：2005-10-12
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
IPC分类号： B24B1/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B21/002
摘要： A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要翻译：抛光装置具有研磨带（21），用于将研磨带（21）供给到研磨带（21）与切口部（11）接触的接触部（30）的供带盘（22））和用于从所述接触部分（30）卷绕所述研磨带（21）的卷取卷轴（23）。抛光装置还具有第一引导部分（24），其具有用于将研磨带（21）直接供应到接触部分（30）的引导表面（241），以及具有引导表面的第二引导部分（25）研磨带（21）卷绕在卷取卷轴（23）上。第一引导部（24）的引导面（241）和/或第二引导部（25）的引导面具有与基板（10）的切口部（11）的形状对应的形状。

2. 发明申请

US20090017730A1 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US20090017730A1
公开(公告)日：2009-01-15
申请号：US11665001
申请日：2005-10-12
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
IPC分类号： B24B1/00 , B24B21/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B21/002
摘要： A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要翻译：抛光装置具有研磨带（21），用于将研磨带（21）供给到研磨带（21）与切口部（11）接触的接触部（30）的供带盘（22））和用于从所述接触部分（30）卷绕所述研磨带（21）的卷取卷轴（23）。抛光装置还具有第一引导部分（24），其具有用于将研磨带（21）直接供应到接触部分（30）的引导表面（241），以及具有引导表面的第二引导部分（25）研磨带（21）卷绕在卷取卷轴（23）上。第一引导部（24）的引导面（241）和/或第二引导部（25）的引导面具有与基板（10）的切口部（11）的形状对应的形状。

3. 发明授权

US07014529B1 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07014529B1
公开(公告)日：2006-03-21
申请号：US11036137
申请日：2005-01-18
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
IPC分类号： B24B49/14
CPC分类号： B24B37/015 , B24B9/065
摘要： A substrate processing apparatus polishes a to-be-polished portion of a semiconductor substrate with a polishing tape. Part of the polishing tape is heated in advance. Part of the polishing tape is deformed conforming to a shape of the to-be-polished portion. Part of the deformed polishing tape is brought into contact with the to-be-polished portion of the substrate. The substrate and polishing tape are moved relative to each other.
摘要翻译：基板处理装置用抛光带对半导体基板的被抛光部分进行抛光。抛光带的一部分预先加热。抛光带的一部分根据待抛光部分的形状而变形。变形的抛光带的一部分与基板的待抛光部分接触。基板和抛光带相对于彼此移动。

4. 发明申请

US20070000873A1 Substrate processing method and semiconductor device manufacturing method 审中-公开
标题翻译：基板加工方法和半导体器件制造方法
公开(公告)号：US20070000873A1
公开(公告)日：2007-01-04
申请号：US11449686
申请日：2006-06-09
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302
CPC分类号： H01L21/02087 , B24B9/065 , B24B21/002 , C09G1/04 , H01L21/302
摘要： There is disclosed a substrate processing method of polishing a peripheral portion of a substrate to-be-processed by sliding a polishing member and the peripheral portion of the substrate to each other to remove a SiN film deposited on the peripheral portion of the substrate. The method includes supplying a solution containing at least one of polyethyleneimine and tetramethylammonium hydroxide to a slide portion between the peripheral portion of the substrate and the polishing member.
摘要翻译：公开了通过将研磨部件和基板的周边部分彼此滑动以去除沉积在基板的周边部分上的SiN膜来研磨待处理基板的周边部分的基板处理方法。该方法包括将含有聚乙烯亚胺和四甲基氢氧化铵中的至少一种的溶液供应到基材的周边部分和抛光部件之间的滑动部分。

5. 发明授权

US08641480B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08641480B2
公开(公告)日：2014-02-04
申请号：US13036114
申请日：2011-02-28
申请人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
发明人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
IPC分类号： B24B1/00
CPC分类号： B24B1/00 , B24B55/00
摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.
摘要翻译：抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

6. 发明申请

US20110256811A1 POLISHING METHOD 审中-公开
标题翻译：抛光方法
公开(公告)号：US20110256811A1
公开(公告)日：2011-10-20
申请号：US13080821
申请日：2011-04-06
申请人： Masayuki NAKANISHI , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
发明人： Masayuki NAKANISHI , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
IPC分类号： B24B1/00
CPC分类号： B24B21/002 , B24B9/065 , B24B21/04 , B24B37/042
摘要： A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.
摘要翻译：抛光方法可以获得良好的抛光轮廓，其例如不会导致半导体层从硅衬底剥离。抛光方法包括：将抛光头定位在旋转基板的边缘部分中的抛光开始位置上方的位置; 降低抛光头的抛光工具，直到研磨工具与旋转基板的边缘部分中的抛光开始位置接触，并且抛光工具和抛光开始位置之间的压力达到设定压力; 允许抛光工具在抛光开始位置停留预定的时间量; 然后将抛光头朝向基板的周缘移动，同时保持抛光工具在旋转基板的边缘部分处于设定压力。

7. 发明申请

US20080113590A1 Polishing method for semiconductor wafer and polishing apparatus for semiconductor wafer 审中-公开
标题翻译：半导体晶片抛光方法及半导体晶片抛光装置
公开(公告)号：US20080113590A1
公开(公告)日：2008-05-15
申请号：US11984057
申请日：2007-11-13
申请人： Takeo Kubota , Atsushi Shigeta , Dai Fukushima
发明人： Takeo Kubota , Atsushi Shigeta , Dai Fukushima
IPC分类号： B24B7/04 , B24B41/06
CPC分类号： B24B9/065
摘要： A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.
摘要翻译：公开了一种在其周边部分具有抛光对象表面的半导体晶片的抛光方法。该方法包括：在半导体晶片沿圆周方向旋转的同时，通过多个按压部沿着半导体晶片的圆周将抛光构件压靠在抛光对象表面上，从而研磨半导体晶片的抛光对象表面。

8. 发明申请

US20070264822A1 Peripheral processing method and method of manufacturing a semiconductor device 有权
标题翻译：外围加工方法及其制造方法
公开(公告)号：US20070264822A1
公开(公告)日：2007-11-15
申请号：US11604786
申请日：2006-11-28
申请人： Takeo Kubota , Atsushi Shigeta , Kaori Yomogihara , Makoto Honda , Hirokazu Ezawa
发明人： Takeo Kubota , Atsushi Shigeta , Kaori Yomogihara , Makoto Honda , Hirokazu Ezawa
IPC分类号： H01L21/316 , H01L21/324
CPC分类号： H01L21/268 , H01L21/02238 , H01L21/02255 , H01L21/28518 , H01L21/31654 , H01L21/31658 , H01L21/31662 , H01L21/32 , H01L21/67115 , H01L21/76807 , H01L21/76814 , H01L21/7684
摘要： A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.
摘要翻译：周边加工方法包括：通过局部加热包括硅基底材的工件的周边中的至少一种，并选择性地向外围供应反应活化物质，允许外围的氧化速率高于自然氧化膜的氧化速率在硅基基板的表面上，由此沿着周边形成第一氧化膜，第一氧化膜比天然氧化膜厚。一种制造半导体器件的方法包括：在硅基衬底的前面和周围形成绝缘膜; 通过选择性地蚀刻掉绝缘膜以暴露硅基衬底的前侧的一部分来形成工件; 在硅基基板的暴露部分形成第一氧化物膜，在选择性蚀刻期间，暴露部分形成在周边的绝缘膜中; 在形成第一氧化膜之后，在工件的前侧沉积金属膜; 并通过热处理使金属膜与硅基基板的前侧的部分反应。

9. 发明授权

US08445360B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08445360B2
公开(公告)日：2013-05-21
申请号：US13027551
申请日：2011-02-15
申请人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
发明人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L21/02038 , B24B9/065 , B24B21/002 , B24B37/042 , H01L21/02087 , H01L21/304 , H01L21/76256
摘要： A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
摘要翻译：一种制造半导体器件的方法使得可以在抛光条件下，在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下，用研磨带有效地抛光硅衬底的周边部分。该方法包括在第一旋转速度旋转器件基板的同时将第一研磨带压靠在具有沉积膜的器件基板的周边部分上，同时以第一转速旋转器件基板，从而去除位于器件基板的周边部分中的沉积膜，暴露下面的硅。在第二旋转速度旋转器件基板的同时，将第二研磨带压在位于器件基板的周边部分中的暴露的硅上，从而将硅抛光到预定的深度。

10. 发明申请

US20110217906A1 POLISHING APPARATUS AND POLISHING METHOD 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US20110217906A1
公开(公告)日：2011-09-08
申请号：US13036114
申请日：2011-02-28
申请人： Masayuki NAKANISHI , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
发明人： Masayuki NAKANISHI , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
IPC分类号： B24B1/00 , B24B55/00
CPC分类号： B24B1/00 , B24B55/00
摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.
摘要翻译：抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

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