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1. 发明授权

US07744445B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US07744445B2
公开(公告)日：2010-06-29
申请号：US11665001
申请日：2005-10-12
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
IPC分类号： B24B1/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B21/002
摘要： A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要翻译：抛光装置具有研磨带（21），用于将研磨带（21）供给到研磨带（21）与切口部（11）接触的接触部（30）的供带盘（22））和用于从所述接触部分（30）卷绕所述研磨带（21）的卷取卷轴（23）。抛光装置还具有第一引导部分（24），其具有用于将研磨带（21）直接供应到接触部分（30）的引导表面（241），以及具有引导表面的第二引导部分（25）研磨带（21）卷绕在卷取卷轴（23）上。第一引导部（24）的引导面（241）和/或第二引导部（25）的引导面具有与基板（10）的切口部（11）的形状对应的形状。

2. 发明授权

US07014529B1 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07014529B1
公开(公告)日：2006-03-21
申请号：US11036137
申请日：2005-01-18
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
IPC分类号： B24B49/14
CPC分类号： B24B37/015 , B24B9/065
摘要： A substrate processing apparatus polishes a to-be-polished portion of a semiconductor substrate with a polishing tape. Part of the polishing tape is heated in advance. Part of the polishing tape is deformed conforming to a shape of the to-be-polished portion. Part of the deformed polishing tape is brought into contact with the to-be-polished portion of the substrate. The substrate and polishing tape are moved relative to each other.
摘要翻译：基板处理装置用抛光带对半导体基板的被抛光部分进行抛光。抛光带的一部分预先加热。抛光带的一部分根据待抛光部分的形状而变形。变形的抛光带的一部分与基板的待抛光部分接触。基板和抛光带相对于彼此移动。

3. 发明申请

US20090017730A1 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US20090017730A1
公开(公告)日：2009-01-15
申请号：US11665001
申请日：2005-10-12
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota , Tamami Takahashi , Daisaku Fukuoka , Kenya Ito
IPC分类号： B24B1/00 , B24B21/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B21/002
摘要： A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要翻译：抛光装置具有研磨带（21），用于将研磨带（21）供给到研磨带（21）与切口部（11）接触的接触部（30）的供带盘（22））和用于从所述接触部分（30）卷绕所述研磨带（21）的卷取卷轴（23）。抛光装置还具有第一引导部分（24），其具有用于将研磨带（21）直接供应到接触部分（30）的引导表面（241），以及具有引导表面的第二引导部分（25）研磨带（21）卷绕在卷取卷轴（23）上。第一引导部（24）的引导面（241）和/或第二引导部（25）的引导面具有与基板（10）的切口部（11）的形状对应的形状。

4. 发明申请

US20070000873A1 Substrate processing method and semiconductor device manufacturing method 审中-公开
标题翻译：基板加工方法和半导体器件制造方法
公开(公告)号：US20070000873A1
公开(公告)日：2007-01-04
申请号：US11449686
申请日：2006-06-09
申请人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
发明人： Takeo Kubota , Atsushi Shigeta , Gen Toyota
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302
CPC分类号： H01L21/02087 , B24B9/065 , B24B21/002 , C09G1/04 , H01L21/302
摘要： There is disclosed a substrate processing method of polishing a peripheral portion of a substrate to-be-processed by sliding a polishing member and the peripheral portion of the substrate to each other to remove a SiN film deposited on the peripheral portion of the substrate. The method includes supplying a solution containing at least one of polyethyleneimine and tetramethylammonium hydroxide to a slide portion between the peripheral portion of the substrate and the polishing member.
摘要翻译：公开了通过将研磨部件和基板的周边部分彼此滑动以去除沉积在基板的周边部分上的SiN膜来研磨待处理基板的周边部分的基板处理方法。该方法包括将含有聚乙烯亚胺和四甲基氢氧化铵中的至少一种的溶液供应到基材的周边部分和抛光部件之间的滑动部分。

5. 发明申请

US20080113590A1 Polishing method for semiconductor wafer and polishing apparatus for semiconductor wafer 审中-公开
标题翻译：半导体晶片抛光方法及半导体晶片抛光装置
公开(公告)号：US20080113590A1
公开(公告)日：2008-05-15
申请号：US11984057
申请日：2007-11-13
申请人： Takeo Kubota , Atsushi Shigeta , Dai Fukushima
发明人： Takeo Kubota , Atsushi Shigeta , Dai Fukushima
IPC分类号： B24B7/04 , B24B41/06
CPC分类号： B24B9/065
摘要： A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.
摘要翻译：公开了一种在其周边部分具有抛光对象表面的半导体晶片的抛光方法。该方法包括：在半导体晶片沿圆周方向旋转的同时，通过多个按压部沿着半导体晶片的圆周将抛光构件压靠在抛光对象表面上，从而研磨半导体晶片的抛光对象表面。

6. 发明申请

US20070264822A1 Peripheral processing method and method of manufacturing a semiconductor device 有权
标题翻译：外围加工方法及其制造方法
公开(公告)号：US20070264822A1
公开(公告)日：2007-11-15
申请号：US11604786
申请日：2006-11-28
申请人： Takeo Kubota , Atsushi Shigeta , Kaori Yomogihara , Makoto Honda , Hirokazu Ezawa
发明人： Takeo Kubota , Atsushi Shigeta , Kaori Yomogihara , Makoto Honda , Hirokazu Ezawa
IPC分类号： H01L21/316 , H01L21/324
CPC分类号： H01L21/268 , H01L21/02238 , H01L21/02255 , H01L21/28518 , H01L21/31654 , H01L21/31658 , H01L21/31662 , H01L21/32 , H01L21/67115 , H01L21/76807 , H01L21/76814 , H01L21/7684
摘要： A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.
摘要翻译：周边加工方法包括：通过局部加热包括硅基底材的工件的周边中的至少一种，并选择性地向外围供应反应活化物质，允许外围的氧化速率高于自然氧化膜的氧化速率在硅基基板的表面上，由此沿着周边形成第一氧化膜，第一氧化膜比天然氧化膜厚。一种制造半导体器件的方法包括：在硅基衬底的前面和周围形成绝缘膜; 通过选择性地蚀刻掉绝缘膜以暴露硅基衬底的前侧的一部分来形成工件; 在硅基基板的暴露部分形成第一氧化物膜，在选择性蚀刻期间，暴露部分形成在周边的绝缘膜中; 在形成第一氧化膜之后，在工件的前侧沉积金属膜; 并通过热处理使金属膜与硅基基板的前侧的部分反应。

7. 发明授权

US07638439B2 Peripheral processing method and method of manufacturing a semiconductor device 有权
标题翻译：外围加工方法及其制造方法
公开(公告)号：US07638439B2
公开(公告)日：2009-12-29
申请号：US11604786
申请日：2006-11-28
申请人： Takeo Kubota , Atsushi Shigeta , Kaori Yomogihara , Makoto Honda , Hirokazu Ezawa
发明人： Takeo Kubota , Atsushi Shigeta , Kaori Yomogihara , Makoto Honda , Hirokazu Ezawa
IPC分类号： H01L21/31
CPC分类号： H01L21/268 , H01L21/02238 , H01L21/02255 , H01L21/28518 , H01L21/31654 , H01L21/31658 , H01L21/31662 , H01L21/32 , H01L21/67115 , H01L21/76807 , H01L21/76814 , H01L21/7684
摘要： A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.
摘要翻译：周边加工方法包括：通过局部加热包括硅基底材的工件的周边中的至少一种，并选择性地向外围供应反应活化物质，允许外围的氧化速率高于自然氧化膜的氧化速率在硅基基板的表面上，由此沿着周边形成第一氧化膜，第一氧化膜比天然氧化膜厚。一种制造半导体器件的方法包括：在硅基衬底的前面和周围形成绝缘膜; 通过选择性地蚀刻掉绝缘膜以暴露硅基衬底的前侧的一部分来形成工件; 在硅基基板的暴露部分形成第一氧化物膜，在选择性蚀刻期间，暴露部分形成在周边的绝缘膜中; 在形成第一氧化膜之后，在工件的前侧沉积金属膜; 并通过热处理使金属膜与硅基基板的前侧的部分反应。

8. 发明授权

US06984532B2 Method of judging residual film by optical measurement 失效
公开(公告)号：US06984532B2
公开(公告)日：2006-01-10
申请号：US10396310
申请日：2003-03-26
申请人： Takeo Kubota , Atsushi Shigeta
发明人： Takeo Kubota , Atsushi Shigeta
IPC分类号： H01L21/66
CPC分类号： G01N21/8422 , G01N21/55 , G01R31/2656 , H01L22/12
摘要： A method of judging a residual film on a sample by an optical measurement, the sample including a first metal film whose reflectance is changed depending on a wavelength of measuring light, and an insulating film formed above the first metal film, and the residual film being a second metal film above the insulating film, the method comprising irradiating the sample with a measuring light so as to measure a change in intensity of light reflected from the sample depending on the wavelength of the measuring light, thereby obtaining a reflectance spectrum curve, and dividing the reflectance spectrum curve into a plurality of wavelength regions so as to judge presence or absence of the second metal film above the insulating film depending on a waveform in each of the wavelength regions of the reflectance spectrum curve.

9. 发明授权

US06743645B2 Method of inspecting process for manufacturing semiconductor device and method of manufacturing semiconductor device 失效
标题翻译：半导体装置的制造方法及半导体装置的制造方法
公开(公告)号：US06743645B2
公开(公告)日：2004-06-01
申请号：US10107360
申请日：2002-03-28
申请人： Takeo Kubota , Atsushi Shigeta
发明人： Takeo Kubota , Atsushi Shigeta
IPC分类号： H01L2166
CPC分类号： H01L22/26
摘要： A method of inspecting a process for manufacturing a semiconductor device, used to determine the status of a processing operation during the manufacturing process, according to the embodiment of the present invention, comprises: detecting an image of a desired area of a surface of a semiconductor workpiece after it has been subjected to the processing operation, using an image signal detector; detecting image signal intensity at each pixel of a plurality of pixels of the image signal detector; and determining the status of the processing operation based on the relationship between the image signal intensity and the number of pixels at each of certain levels of the image signal intensity. A method of manufacturing a semiconductor device is made by utilizing the above-described inspection method.
摘要翻译：根据本发明的实施例的检查用于确定制造过程中的处理操作的状态的半导体器件的制造工艺的方法包括：检测半导体的表面的所需区域的图像使用图像信号检测器进行处理后的工件; 检测图像信号检测器的多个像素的每个像素处的图像信号强度; 以及基于所述图像信号强度与所述图像信号强度的某一特定水平的像素数之间的关系来确定所述处理操作的状态。利用上述检查方法制造半导体器件的制造方法。

10. 发明授权

US08641480B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08641480B2
公开(公告)日：2014-02-04
申请号：US13036114
申请日：2011-02-28
申请人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
发明人： Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota , Takeshi Nishioka
IPC分类号： B24B1/00
CPC分类号： B24B1/00 , B24B55/00
摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.
摘要翻译：抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

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