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    • 3. 发明申请
    • POLISHING METHOD
    • 抛光方法
    • US20110256811A1
    • 2011-10-20
    • US13080821
    • 2011-04-06
    • Masayuki NAKANISHIKenya ItoMasaya SekiKenji IwadeTakeo Kubota
    • Masayuki NAKANISHIKenya ItoMasaya SekiKenji IwadeTakeo Kubota
    • B24B1/00
    • B24B21/002B24B9/065B24B21/04B24B37/042
    • A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.
    • 抛光方法可以获得良好的抛光轮廓,其例如不会导致半导体层从硅衬底剥离。 抛光方法包括:将抛光头定位在旋转基板的边缘部分中的抛光开始位置上方的位置; 降低抛光头的抛光工具,直到研磨工具与旋转基板的边缘部分中的抛光开始位置接触,并且抛光工具和抛光开始位置之间的压力达到设定压力; 允许抛光工具在抛光开始位置停留预定的时间量; 然后将抛光头朝向基板的周缘移动,同时保持抛光工具在旋转基板的边缘部分处于设定压力。