会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Apparatus, method and program for communication
    • 用于通信的装置,方法和程序
    • US07312904B2
    • 2007-12-25
    • US10600433
    • 2003-06-23
    • Takehiro YoshidaHitoshi Saito
    • Takehiro YoshidaHitoshi Saito
    • H04N1/04
    • H04N1/33361H04N1/32H04N1/333H04N1/33369H04N1/33384H04N2201/3335H04N2201/33371
    • Facsimile communication is correctly performed even when an echo is generated in a communication line having a delay, by handling an echo signal in such a manner that when an echo of a CFR signal (according to the ITU-T recommendation V.21) transmitted from a receiving communication apparatus is received by the receiving communication apparatus, the echo signal is not recognized as a carrier of a picture signal and training data is not adjusted on the basis of the received echo signal, thereby making it possible to receive a correct short training/picture signal which arrives thereafter. A facsimile communication procedure includes storing training information when long training information is received, detecting success in receiving short training information, detecting high-speed data, setting the stored training information into the modem, and changing the receiving operation in response to detection of short training information and high speed data.
    • 即使在具有延迟的通信线路中产生回波时也能正确地进行传真通信,通过以如下方式处理回波信号:当CFR信号(根据ITU-T建议V.21)的回波从 接收通信装置接收到接收通信装置,回波信号不被识别为图像信号的载波,并且基于接收的回波信号不调整训练数据,从而可以接收正确的短训练 /图像信号。 传真通信程序包括当接收长训练信息时存储训练信息,检测成功接收短训练信息,检测高速数据,将存储的训练信息设置到调制解调器中,以及响应于短训练的检测而改变接收操作 信息和高速数据。
    • 3. 发明授权
    • Communication apparatus and method
    • 通讯装置及方法
    • US06366363B1
    • 2002-04-02
    • US09190099
    • 1998-11-12
    • Koji HaradaTakehiro YoshidaHitoshi SaitoKoji Nishioka
    • Koji HaradaTakehiro YoshidaHitoshi SaitoKoji Nishioka
    • H04N100
    • H04N1/32117
    • A communication apparatus and method is arranged such that, when executing a communication protocol conforming to V.34 recommendation, the communication procedure is appropriately recovered even if a second tone signal (a tone A or a tone B) is not received within 2 seconds. A CPU (central processing unit) recognizes a state of execution of the communication procedure by a modem. When the second tone A signal (or tone B signal) has not been received, the CPU causes the modem to receive the tone A signal for a defined time period. When the tone A signal has been received within the defined time period, the CPU returns the communication procedure conforming to the V.34 recommendation by the modem to the first half portion of phase 2.
    • 通信装置和方法被布置成使得当执行符合V.34建议的通信协议时,即使在2秒内没有接收到第二音调信号(音调A或音调B),适当恢复通信过程。 CPU(中央处理单元)通过调制解调器识别通信过程的执行状态。 当没有接收到第二音调A信号(或音调B信号)时,CPU使调制解调器接收到定义的时间段的音调A信号。 当在定义的时间段内接收到音调A信号时,CPU将通过调制解调器将符合V.34建议的通信过程返回到阶段2的前半部分。
    • 6. 发明授权
    • Semiconductor device and test method
    • 半导体器件及测试方法
    • US08633571B2
    • 2014-01-21
    • US13482146
    • 2012-05-29
    • Akihiko OkutsuHitoshi SaitoYoshiaki Okano
    • Akihiko OkutsuHitoshi SaitoYoshiaki Okano
    • H01L23/544H01L29/66
    • G01R31/275G01R31/2601G01R31/2884H01L22/32H01L23/522H01L23/564H01L23/585H01L2224/05554H01L2924/0002H01L2924/00
    • A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple inter-layer insulation films each including a wiring layer, a moisture resistant film formed between a first inter-layer insulation film and a second inter-layer insulation film which are included in the multilayer interconnection structure, a first portion which extended from a first side of the moisture resistant film and passes the first opening part, a second portion which extended from a second side of the moisture resistant film and passes through the second opening part, and a wiring pattern including a via plug which penetrates the moisture resistant film and connects the first portion and the second portion.
    • 半导体器件包括:半导体衬底,包括元件区域,内部密封件和外部密封件,所述元件区域,内部密封件和外部密封件分别形成在所述元件区域上并具有第一开口部分和第二开口部分,所述多层互连结构分别形成在所述衬底上 并且堆叠多个层间绝缘膜,每个层间绝缘膜包括布线层,形成在包括在多层互连结构中的第一层间绝缘膜和第二层间绝缘膜之间的防潮膜,第一部分从 所述防潮膜的第一面通过所述第一开口部,所述第二部分从所述防湿膜的第二侧延伸并穿过所述第二开口部;以及布线图案,其包括穿过所述防潮膜的通孔塞 并且连接第一部分和第二部分。
    • 7. 发明申请
    • MAGNETIC FIELD OBSERVATION DEVICE AND MAGNETIC FIELD OBSERVATION METHOD
    • 磁场观测装置和磁场观测方法
    • US20130174302A1
    • 2013-07-04
    • US13819486
    • 2011-09-05
    • Hitoshi SaitoSatoru Yoshimura
    • Hitoshi SaitoSatoru Yoshimura
    • G01Q60/50
    • G01Q60/38G01Q60/50G01Q60/54G01R33/022G01R33/0385
    • A magnetic-field-observation device and method for measuring magnetic force near a magnetic material specimen's surface with high resolution and detecting the polarity of the magnetic pole of specimen's surface. The device including: a probe; excitation mechanism that excites it; scanning mechanism that relatively moves the probe and specimen; alternating magnetic field generation mechanism to make the probe periodically undergo magnetization reversal and apply thereto an alternating magnetic field having magnitude not making the specimen undergo magnetization reversal; and modulation measurement mechanism for measuring degree of periodical frequency modulation of the probe's oscillation caused by its apparent spring constant periodically changed by force of periodically changed intensity and applied to the probe by alternating force through magnetic interaction between magnetizations of the probe and specimen, by frequency demodulation or by measuring intensity of one sideband wave spectrum among spectrums generated by the frequency modulation. The method performed using the device.
    • 一种用于以高分辨率测量磁性材料试样表面附近的磁力并检测试样表面磁极极性的磁场观测装置和方法。 该装置包括:探头; 激发机制; 相对移动探头和试样的扫描机构; 交变磁场产生机构使探针周期性地进行磁化反转,并向其施加具有不使样本经历磁化反转的量值的交变磁场; 以及用于测量由其由周期性变化的强度周期性地改变的表观弹簧常数引起的探头振荡周期性频率调制程度的调制测量机构,并且通过以探针和样品的磁化之间的磁相互作用的交替力通过频率施加到探针 通过频率调制产生的频谱中的一个边带波谱的强度进行解调或测量。 使用该设备执行的方法。
    • 9. 发明授权
    • Communicating apparatus and program
    • 通讯设备和程序
    • US07903276B2
    • 2011-03-08
    • US12144556
    • 2008-06-23
    • Hitoshi Saito
    • Hitoshi Saito
    • G06F3/12
    • H04N1/3333H04N2201/3335
    • It is an object to provide a communicating apparatus and its program in which in the case where the RTC pattern or the RCP frame cannot be received due to the noises or in the case where a modem diverges and data cannot be normally demodulated, a procedure signal can be certainly detected, the modem can advance to a low-speed mode, and a possibility of a communication error can be remarkably reduced. During the image reception, both a carrier of V.21ch2 modulation and data signal quality (EQM) in a high-speed mode are, in parallel, monitored. When the data signal quality (EQM) deteriorates to a value larger than or equal to a predetermined threshold value and the carrier of the V.21ch2 modulation is detected, the modem advances to the low-speed mode and the procedure signal is received.
    • 本发明的目的是提供一种通信装置及其程序,其中在由于噪声而不能接收到RTC模式或RCP帧的情况下,或者在调制解调器发散并且数据不能正常解调的情况下,过程信号 可以肯定地检测到,调制解调器可以前进到低速模式,并且可以显着降低通信错误的可能性。 在图像接收期间,并行地监视V.21ch2调制的载波和高速模式的数据信号质量(EQM)。 当数据信号质量(EQM)恶化到大于或等于预定阈值的值并且检测到V.21ch2调制的载波时,调制解调器进入低速模式并且接收过程信号。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07221030B2
    • 2007-05-22
    • US11047603
    • 2005-02-02
    • Hitoshi Saito
    • Hitoshi Saito
    • H01L29/94
    • H01L21/76229H01L27/105H01L27/11526H01L27/11543H01L27/11546
    • A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.
    • 在半导体衬底上形成衬垫氧化膜和氮化硅膜。 接下来,在氮化硅膜的图案化之后,通过蚀刻衬垫氧化物膜和衬底,在第一区域中形成第一沟槽,在第二区域中形成第二沟槽。 之后,通过对第一区域的衬垫氧化膜进行侧蚀刻同时用抗蚀剂保护第二区域,在衬底和氮化硅膜之间形成间隙。 随后,第一和第二沟槽的内表面被氧化。 此时,相当大量的氧化剂(氧气)被供给到第一沟槽的顶部边缘部分,并且衬底的角部的曲率增加。