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1. 发明授权

US08367541B2 Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same 有权
标题翻译：适用于铁电存储器的半导体器件及其制造方法
公开(公告)号：US08367541B2
公开(公告)日：2013-02-05
申请号：US11189866
申请日：2005-07-27
申请人： Kouichi Nagai , Hitoshi Saito , Kaoru Sugawara , Makoto Takahashi , Masahito Kudo , Kazuhiro Asai , Yukimasa Miyazaki , Katsuhiro Sato , Kaoru Saigoh
发明人： Kouichi Nagai , Hitoshi Saito , Kaoru Sugawara , Makoto Takahashi , Masahito Kudo , Kazuhiro Asai , Yukimasa Miyazaki , Katsuhiro Sato , Kaoru Saigoh
IPC分类号： H01L21/4763
CPC分类号： H01L27/11507 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L24/03 , H01L24/05 , H01L24/48 , H01L27/105 , H01L27/11502 , H01L27/11509 , H01L28/57 , H01L28/65 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05096 , H01L2224/05166 , H01L2224/05187 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/48463 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01083 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/04941 , H01L2924/04953 , H01L2224/45099 , H01L2224/05552
摘要： After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an Al2O3 film is formed.
摘要翻译：在形成铁电电容器之后，形成连接到铁电电容器的Al布线（导电焊盘）。然后，在Al布线周围形成氧化硅膜和氮化硅膜。此后，作为抑制水分渗透到氧化硅膜中的渗透抑制膜，形成Al 2 O 3膜。

2. 发明申请

US20060220081A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060220081A1
公开(公告)日：2006-10-05
申请号：US11189866
申请日：2005-07-27
申请人： Kouichi Nagai , Hitoshi Saito , Kaoru Sugawara , Makoto Takahashi , Masahito Kudo , Kazuhiro Asai , Yukimasa Miyazaki , Katsuhiro Sato , Kaoru Saigoh
发明人： Kouichi Nagai , Hitoshi Saito , Kaoru Sugawara , Makoto Takahashi , Masahito Kudo , Kazuhiro Asai , Yukimasa Miyazaki , Katsuhiro Sato , Kaoru Saigoh
IPC分类号： H01L29/76
CPC分类号： H01L27/11507 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L24/03 , H01L24/05 , H01L24/48 , H01L27/105 , H01L27/11502 , H01L27/11509 , H01L28/57 , H01L28/65 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05096 , H01L2224/05166 , H01L2224/05187 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/48463 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01083 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/04941 , H01L2924/04953 , H01L2224/45099 , H01L2224/05552
摘要： After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an Al2O3 film is formed.
摘要翻译：在形成铁电电容器之后，形成连接到铁电电容器的Al布线（导电焊盘）。然后，在Al布线周围形成氧化硅膜和氮化硅膜。此后，作为抑制水分渗透到氧化硅膜中的渗透抑制膜，形成Al 2 O 3 3膜。

3. 发明授权

US07982254B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07982254B2
公开(公告)日：2011-07-19
申请号：US11969019
申请日：2008-01-03
申请人： Kouichi Nagai , Katsuhiro Sato , Kaoru Sugawara , Makoto Takahashi , Masahito Kudou , Kazuhiro Asai , Yukimasa Miyazaki , Kaoru Saigoh
发明人： Kouichi Nagai , Katsuhiro Sato , Kaoru Sugawara , Makoto Takahashi , Masahito Kudou , Kazuhiro Asai , Yukimasa Miyazaki , Kaoru Saigoh
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.
摘要翻译：形成具有水/氢阻断功能的保护膜（56），以便在与焊盘电极电隔离的同时覆盖焊盘电极（54a）的外围。用于构成保护膜的实施方案中选择的材料是具有显着优于绝缘材料（例如钯（Pd）或含钯材料）和铱（Ir）的防氢/阻氢功能的高度防潮材料）或氧化铱（IrOx：通常为x = 2）或含铱或氧化铱的材料。可以通过简单的结构实现能够可靠地防止水/氢进入内部并且保持铁电电容器结构（30）的高性能的FeRAM。

4. 发明授权

US07750485B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07750485B2
公开(公告)日：2010-07-06
申请号：US11970245
申请日：2008-01-07
申请人： Makoto Takahashi , Kouichi Nagai
发明人： Makoto Takahashi , Kouichi Nagai
IPC分类号： H01L23/485
CPC分类号： H01L27/11507 , H01L21/7685 , H01L23/53223 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/11502 , H01L27/11509 , H01L28/55 , H01L28/65 , H01L2224/02166 , H01L2224/03 , H01L2224/05006 , H01L2224/05093 , H01L2224/05546 , H01L2224/05556 , H01L2224/0558 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要翻译：根据半导体器件的制造方法，通过CMP等对下部绝缘膜（55）的表面进行平坦化，在绝缘层的下部绝缘膜（56）上形成上绝缘膜（56）和保护金属膜（59）电影（55）。因此，上绝缘膜56和保护金属膜59形成为具有优异的覆盖度和上绝缘膜56和保护金属膜59的水/氢阻断能力）最大化。

5. 发明授权

US08076212B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08076212B2
公开(公告)日：2011-12-13
申请号：US12785601
申请日：2010-05-24
申请人： Makoto Takahashi , Kouichi Nagai
发明人： Makoto Takahashi , Kouichi Nagai
IPC分类号： H01L21/20
CPC分类号： H01L27/11507 , H01L21/7685 , H01L23/53223 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/11502 , H01L27/11509 , H01L28/55 , H01L28/65 , H01L2224/02166 , H01L2224/03 , H01L2224/05006 , H01L2224/05093 , H01L2224/05546 , H01L2224/05556 , H01L2224/0558 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要翻译：根据半导体器件的制造方法，通过CMP等对下部绝缘膜（55）的表面进行平坦化，在绝缘层的下部绝缘膜（56）上形成上绝缘膜（56）和保护金属膜（59）电影（55）。因此，上绝缘膜56和保护金属膜59形成为具有优异的覆盖度和上绝缘膜56和保护金属膜59的水/氢阻断能力）最大化。

6. 外观设计

USD859240S1 Front bumper for an automobile 有权
公开(公告)号：USD859240S1
公开(公告)日：2019-09-10
申请号：US29656535
申请日：2018-07-13
申请人： Matthew Niven Sperling , Makoto Takahashi , Yukiko Yano
设计人： Matthew Niven Sperling , Makoto Takahashi , Yukiko Yano
摘要： FIG. 1 is a perspective view of a front bumper for an automobile showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof;
FIG. 8 is a perspective view of a second embodiment thereof;
FIG. 9 is a front view thereof;
FIG. 10 is a rear view thereof;
FIG. 11 is a left side view thereof;
FIG. 12 is a right side view thereof;
FIG. 13 is a top view thereof; and,
FIG. 14 is a bottom view thereof.
The claimed design is indicated by the relatively dark portions in the figures. The relatively light portions form no part of the claimed design.

7. 发明授权

US09322116B2 Apparatus for producing metal oxide nanofibers and method for producing metal oxide nanofibers 有权
标题翻译：金属氧化物纳米纤维的制造装置及金属氧化物纳米纤维的制造方法
公开(公告)号：US09322116B2
公开(公告)日：2016-04-26
申请号：US13636915
申请日：2011-04-25
申请人： Masaya Nakatani , Makoto Takahashi
发明人： Masaya Nakatani , Makoto Takahashi
IPC分类号： C01B33/20 , C01G23/047 , C01F7/02 , D01F9/08 , C04B35/622 , D01D5/00 , C01B33/18 , C01F7/04
CPC分类号： D01F9/08 , C01B33/18 , C01F7/04 , C01G23/047 , C04B35/62231 , C04B35/62236 , C04B35/6224 , C04B35/62259 , C04B2235/40 , C04B2235/402 , C04B2235/404 , C04B2235/428 , D01D5/00
摘要： An apparatus for producing metal oxide nanofibers includes a jetting unit, a mixing unit, a heating unit, and a cooling unit. The jetting unit jets particles made of a metal. The mixing unit prepares a mixture by mixing the metal particles and a gas containing an oxidizing component that includes oxygen in molecules of the component. The heating unit heats the mixture to raise the temperature of the mixture up to a temperature at which the metal evaporates. The cooling unit cools the product thus-produced in the heating unit.
摘要翻译：一种金属氧化物纳米纤维的制造装置，包括喷射单元，混合单元，加热单元和冷却单元。喷射装置喷射由金属制成的颗粒。混合单元通过在组分的分子中混合金属颗粒和含有氧的氧化组分的气体来制备混合物。加热单元加热混合物以将混合物的温度升高到金属蒸发的温度。冷却单元冷却在加热单元中产生的产品。

8. 发明授权

US09163311B2 Film forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US09163311B2
公开(公告)日：2015-10-20
申请号：US13333137
申请日：2011-12-21
申请人： Harunari Hasegawa , Kippei Sugita , Atsushi Ando , Yoshiki Fukuhara , Makoto Takahashi
发明人： Harunari Hasegawa , Kippei Sugita , Atsushi Ando , Yoshiki Fukuhara , Makoto Takahashi
IPC分类号： C23C16/455 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45578 , C23C16/455 , C23C16/45563 , C23C16/45576 , C23C16/458 , C23C16/4584 , C23C16/52
摘要： Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.
摘要翻译：本发明提供一种成膜装置，其通过向基板供给原料气体而在保持在成膜容器内的基板上形成膜。成膜容器包括基板保持单元，供给机构，其构造成包括供给管，其上形成有供给孔，供给孔通过供给孔向成膜容器的内部供给原料气体;排气机构，排气管，其上形成有排气孔，通过排气孔从成膜容器的内部排出气体;以及控制器，被配置为控制基板保持单元，供给机构和排气机构。供给孔和排气孔形成为彼此面对，并且基板保持在基板保持单元之间。

9. 发明授权

US09034121B2 Low alloy steel for geothermal power generation turbine rotor, and low alloy material for geothermal power generation turbine rotor and method for manufacturing the same 有权
标题翻译：地热发电用转子用低合金钢，地热发电用转子用低合金材料及其制造方法
公开(公告)号：US09034121B2
公开(公告)日：2015-05-19
申请号：US13448770
申请日：2012-04-17
申请人： Satoru Ohsaki , Kazuhiro Miki , Tsukasa Azuma , Koji Kajikawa , Shigeru Suzuki , Masayuki Yamada , Itaru Murakami , Kenichi Okuno , Liang Yan , Reki Takaku , Akihiro Taniguchi , Tetsuya Yamanaka , Makoto Takahashi , Kenichi Imai , Osamu Watanabe , Joji Kaneko
发明人： Satoru Ohsaki , Kazuhiro Miki , Tsukasa Azuma , Koji Kajikawa , Shigeru Suzuki , Masayuki Yamada , Itaru Murakami , Kenichi Okuno , Liang Yan , Reki Takaku , Akihiro Taniguchi , Tetsuya Yamanaka , Makoto Takahashi , Kenichi Imai , Osamu Watanabe , Joji Kaneko
IPC分类号： C22C38/46 , C21D6/00 , C22C38/58 , C22C38/44 , C21D7/13 , C21D1/25 , C21D1/28
CPC分类号： C22C38/58 , C21D1/25 , C21D1/28 , C21D7/13 , C22C38/44 , C22C38/46
摘要： A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40° C.
摘要翻译：低合金钢锭含有0.15〜0.30％的C，0.03〜0.2％的Si，0.5〜2.0％的Mn，0.1〜1.3％的Ni，1.5〜3.5％的Cr，0.1〜1.0 的Mo，以及大于0.15至0.35％的V，以及任选的Ni，余量为Fe和不可避免的杂质。对低合金钢锭进行包括淬火步骤和回火步骤的质量热处理，以获得其金相组织中晶粒数为3至7并且不含共析铁素体的材料，并且其中拉伸强度为760〜860MPa，断裂外观转变温度为40℃以下。

10. 发明授权

US09026135B2 Mobile terminal device and positioning method 有权
标题翻译：移动终端设备及定位方法
公开(公告)号：US09026135B2
公开(公告)日：2015-05-05
申请号：US13641019
申请日：2011-04-11
申请人： Makoto Takahashi
发明人： Makoto Takahashi
IPC分类号： H04W4/02 , H04W4/04 , H04W24/02 , H04W64/00 , G01S19/48 , G01S19/34 , G01S19/25
CPC分类号： G01S19/34 , G01S19/25
摘要： There are provided a mobile terminal device and a positioning method, in which power saving is enabled. When an environment estimating unit determines that the mobile terminal device is currently located in an indoor environment, an autonomous GPS positioning regulating unit thereof regulates implementation of an autonomous positioning operation by an autonomous GPS positioning unit to enable the suppression of wasteful power consumption caused by the implementation of the autonomous GPS positioning operation that has no possibility of being successful at a current time. In the meanwhile, an assist information acquiring processing unit of an A-GPS positioning unit is made to perform an assist information acquiring process that is a former process of the A-GPS positioning operation. When the location accuracy of outline location information acquired has a good result of a level 3 or higher, the outline location information is provided as a positioning result.
摘要翻译：提供了能够省电的移动终端装置和定位方法。当环境估计单元确定移动终端设备当前位于室内环境中时，自主GPS定位调节单元通过自主GPS定位单元来调节自主定位操作的实现，以便能够抑制由实施在当前时间无法成功的自主GPS定位操作。同时，使A-GPS定位单元的辅助信息获取处理单元执行作为A-GPS定位操作的前一处理的辅助信息获取处理。当获取的轮廓位置信息的位置精度具有3级或更高级别的良好结果时，轮廓位置信息被提供作为定位结果。

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