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1. 发明授权

US06398429B1 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06398429B1
公开(公告)日：2002-06-04
申请号：US09524282
申请日：2000-03-13
申请人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
发明人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
IPC分类号： G03D500
CPC分类号： G03D5/04 , G03F7/3021 , G03F7/38 , Y10S134/902
摘要： A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.
摘要翻译：将具有光敏基团的溶液施加到抗蚀剂膜上，将显影液施加到其上，并且具有光敏基团的溶液的整个表面全部被曝光。在具有感光性自由基的溶液的涂膜溶解在显影液中之后，抗蚀剂膜的显影全部进行，因此在基板表面上不会发生显影开始时间的时间差，从而能够均匀显影以及衬底表面的线宽均匀性（CD值均匀性）的改善。

2. 发明授权

US06713239B2 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06713239B2
公开(公告)日：2004-03-30
申请号：US10108382
申请日：2002-03-29
申请人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
发明人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
IPC分类号： G03F730
CPC分类号： G03D5/04 , G03F7/3021 , G03F7/38 , Y10S134/902
摘要： A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.
摘要翻译：将具有光敏基团的溶液施加到抗蚀剂膜上，将显影液施加到其上，并且具有光敏基团的溶液的整个表面全部被曝光。在具有感光性自由基的溶液的涂膜溶解在显影液中之后，抗蚀剂膜的显影全部进行，因此在基板表面上不会发生显影开始时间的时间差，从而能够均匀显影以及衬底表面的线宽均匀性（CD值均匀性）的改善。

3. 发明授权

US06709523B1 Silylation treatment unit and method 失效
公开(公告)号：US06709523B1
公开(公告)日：2004-03-23
申请号：US09713247
申请日：2000-11-16
申请人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
发明人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
IPC分类号： C23C1600
CPC分类号： H01L21/67109 , G03F7/265 , G03F7/70991
摘要： A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

4. 发明授权

US06491452B2 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06491452B2
公开(公告)日：2002-12-10
申请号：US09832205
申请日：2001-04-11
申请人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
发明人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
IPC分类号： G03D500
CPC分类号： G03F7/32 , G03F7/3014 , G03F7/3021
摘要： When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.
摘要翻译：当形成在基板上的抗蚀剂膜以预定图案曝光，然后曝光图案显影时，将能够降低显影液流动性的物质加入显影液中，引起添加物质的显影液在预定条件下变成低流体，将显影液施加到基板上暴露的抗蚀剂膜上，然后给显影液赋予预定的触发剂，使显影液变成高流体，以使显影进步。因此，可以使线宽度均匀，并且在显影溶液的涂布期间不会发生缺陷。

5. 发明授权

US06238848B1 Developing method and developing apparatus 失效
公开(公告)号：US06238848B1
公开(公告)日：2001-05-29
申请号：US09539378
申请日：2000-03-31
申请人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
发明人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
IPC分类号： G03F730
CPC分类号： G03F7/32 , G03F7/3014 , G03F7/3021
摘要： When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

6. 发明授权

US06872670B2 Silylation treatment unit and method 失效
标题翻译：甲硅烷基化处理装置及方法
公开(公告)号：US06872670B2
公开(公告)日：2005-03-29
申请号：US10752556
申请日：2004-01-08
申请人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
发明人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
IPC分类号： H01L21/205 , G03F7/20 , G03F7/26 , H01L21/00 , H01L21/31
CPC分类号： H01L21/67109 , G03F7/265 , G03F7/70991
摘要： A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.
摘要翻译：甲硅烷基化处理单元包括室，设置在该室中用于加热基板的加热机构，用于将包含甲硅烷基化试剂的蒸气供应到室中的供给机构。该单元还具有用于将基板保持在室中的基板保持器，其中加热机构和基板之间的间隔可调节至少三级或更多级。接收基板，使得其通过使来自加热机构的间隔最大化而受到室内热量的影响最小。使间隔相对更靠近加热机构，等待室内温度获得高的平面均匀性。在获得高平面均匀性之后，间隔进一步靠近加热机构，使得发生甲硅烷基化反应。

7. 发明授权

US06706322B2 Film forming apparatus and film forming method 失效
标题翻译：成膜装置及成膜方法
公开(公告)号：US06706322B2
公开(公告)日：2004-03-16
申请号：US10062506
申请日：2002-02-05
申请人： Kiyohisa Tateyama , Tsutae Omori
发明人： Kiyohisa Tateyama , Tsutae Omori
IPC分类号： B05D312
CPC分类号： H01L21/6715 , B05C11/08 , Y10T74/19074 , Y10T74/19102
摘要： A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.
摘要翻译：驱动皮带轮设置在驱动马达上。多个从动带轮设置在旋转卡盘的旋转轴上，真空吸附基板。皮带从一个从动轮传递到驱动皮带轮。皮带从其他从动滑轮传递到多个气动马达的驱动轴。由于空气马达有助于驱动马达的驱动，因此可以以预定的旋转加速度旋转大的基板。因此，可以提供允许提供的处理溶液量减少并且可以在基板上同样形成处理溶液膜的成膜装置和成膜方法。

8. 发明授权

US06306455B1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US06306455B1
公开(公告)日：2001-10-23
申请号：US09141721
申请日：1998-08-27
申请人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
发明人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
IPC分类号： B05D312
CPC分类号： H01L21/67248 , B05C11/08 , B05D1/005 , H01L21/6838
摘要： A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.
摘要翻译：一种处理在基板上形成涂膜的基板的方法，包括以下步骤：（a）将基板安装在能够对基板产生热影响的温度控制装置上，并将基板的温度控制在温度控制装置，（b）控制供给到基板的涂布液的温度，（c）控制基板被输送和保持时与基板接触的接触部件的温度，（d）检测温度，用于将涂布溶液涂布到基板上的处理空间，（e）基于通过在基板上形成涂膜而获得的温度/膜厚度数据设定所需温度，（f）控制在基板上的温度控制操作基于步骤（e）中设定的所需温度和步骤（d）中检测到的温度，最小步骤（c），和（g）将涂布溶液施加到副策划

9. 发明授权

US06203218B1 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06203218B1
公开(公告)日：2001-03-20
申请号：US09362963
申请日：1999-07-30
申请人： Tsutae Omori , Mitsuhiro Sakai , Shinobu Tanaka
发明人： Tsutae Omori , Mitsuhiro Sakai , Shinobu Tanaka
IPC分类号： G03D500
CPC分类号： G03F7/30 , Y10T156/1928
摘要： When an edge processing head is scanned in one direction, the discharge of a rinse solution from a rinse solution discharge nozzle at the front in a carrying direction is stopped, a developing solution is discharged from a developing solution discharge nozzle, and a rinse solution is discharged from a rinse solution discharge nozzle at the rear in the carrying direction. Specifically, with a developing solution being discharged to a glass substrate, the discharge of a rinse solution immediately follows the discharge of the developing solution. Thus, the edge processing of the substrate can be performed with minimal increases in the number of processes and in installation.
摘要翻译：当在一个方向上扫描边缘处理头时，停止在前方从冲洗液排出喷嘴沿输送方向排出冲洗溶液，将显影液从显影液排出喷嘴排出，冲洗溶液为从后方的冲洗液排出喷嘴在运送方向排出。具体地说，将显影溶液排出到玻璃基板上，冲洗液的排出立即在显影液的排出之后。因此，可以以最少的加工次数和安装次数来进行基板的边缘加工。

10. 发明授权

US06361600B1 Film forming apparatus and film forming method 失效
公开(公告)号：US06361600B1
公开(公告)日：2002-03-26
申请号：US09366959
申请日：1999-08-04
申请人： Kiyohisa Tateyama , Tsutae Omori
发明人： Kiyohisa Tateyama , Tsutae Omori
IPC分类号： B05C1102
CPC分类号： H01L21/6715 , B05C11/08 , Y10T74/19074 , Y10T74/19102
摘要： A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.

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