专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5148259A Semiconductor device having thin film wiring layer of aluminum containing carbon 失效
标题翻译：具有薄膜的铝薄膜接线层的半导体器件
公开(公告)号：US5148259A
公开(公告)日：1992-09-15
申请号：US740872
申请日：1991-07-31
申请人： Takashi Kato , Takashi Ito , Mamoru Maeda
发明人： Takashi Kato , Takashi Ito , Mamoru Maeda
IPC分类号： H01L21/3205 , H01L23/532 , H01L29/45
CPC分类号： H01L29/456 , H01L21/32051 , H01L23/53219 , H01L2924/0002 , Y10S438/937
摘要： A semiconductor device comprises one or a plurality of thin film wiring layers made of aluminum containing carbon, so as to obtain hillock-free wiring layers. A method of forming the thin film wiring layer employs a plasma-enhanced chemical vapor deposition or a magnetron-plasma chemical vapor deposition to form the thin film wiring layer.
摘要翻译：半导体器件包括由含有碳的铝制成的一个或多个薄膜布线层，以获得无小桥接的布线层。形成薄膜布线层的方法采用等离子体增强化学气相沉积或磁控管 - 等离子体化学气相沉积来形成薄膜布线层。

2. 发明授权

US4366506A Picture transfer method and apparatus therefor 失效
标题翻译：图像传送方法及其装置
公开(公告)号：US4366506A
公开(公告)日：1982-12-28
申请号：US271239
申请日：1981-06-08
申请人： Koichi Ejiri , Morisumi Kurose , Mamoru Maeda
发明人： Koichi Ejiri , Morisumi Kurose , Mamoru Maeda
IPC分类号： H03M7/46 , H04N1/41 , H04N1/411 , H04N7/12
CPC分类号： H04N1/411
摘要： A system for sampling binary value images of white and black and efficiently encoding and decoding them is disclosed. An image is sampled to form a plurality of small picture cells. The small picture cells are merged in groups of four to form a plurality of large picture cells. At least one least frequently occurring density level is determined for the plurality of large picture cells. The least frequently occurring density level is converted to an adjacent density level. The density levels for the picture cells are then encoded and transmitted to a receiver. At the receiving end, the encoded large picture cells are decoded to form a plurality of restored large picture cells. Each restored large picture cell is divided into four small restored picture cells by comparing its density level with that of four neighboring large restored picture cells.
摘要翻译：公开了一种用于对白和黑二进制值图像进行采样并对其进行有效编码和解码的系统。对图像进行采样以形成多个小图像单元。小图像单元以四组合并形成多个大图像单元。为多个大图像单元确定至少一个最不频繁出现的浓度水平。最不发生的密度水平被转换为相邻的密度水平。然后将图像单元的密度级别编码并发送到接收器。在接收端，编码的大图像单元被解码以形成多个恢复的大图像单元。将每个恢复的大图像单元通过将其密度水平与四个相邻的大的恢复图像单元的密度水平进行比较而被分为四个小的恢复图像单元

3. 发明授权

US6025603A Specific document determining apparatus, image reading apparatus, specific document determining method, and a computer-readable recording medium with a program for execution of the method stored therein image reading apparatus having a specific document 失效
标题翻译：特定文件确定装置，图像读取装置，特定文件确定方法以及具有用于执行存储在其中的方法的程序的计算机可读记录介质具有特定文档的图像读取装置
公开(公告)号：US6025603A
公开(公告)日：2000-02-15
申请号：US957737
申请日：1997-10-24
申请人： Yutaka Hasegawa , Takeshi Ukai , Hideaki Yamagata , Kazuhisa Ohtsubo , Mamoru Maeda
发明人： Yutaka Hasegawa , Takeshi Ukai , Hideaki Yamagata , Kazuhisa Ohtsubo , Mamoru Maeda
IPC分类号： G03G21/04 , G07D7/10 , G07D7/20 , H04N1/00 , G06K5/00
CPC分类号： H04N1/00846 , G03G21/046 , G07D7/10 , G07D7/20 , H04N1/00864 , H04N1/00872
摘要： The present specific document determining apparatus according to the present invention comprises a microwave sensor for irradiating a microwave to and scanning a document, detecting a reflected portion of the irradiated microwave, outputting a first detection signal, again irradiating a microwave and scanning the document after the document is placed on a contact glass, detecting a reflected portion of the irradiated microwave, and outputting a second detection signal; a signal processing section for using the first detection signal as a reference signal and comparing a level of the reference signal to a level of the second detection signal to make determination as to whether metallic fiber is included in the document or not, and a controller for making determination as to whether the document is a specific one or not according to a result of determination by the signal processing section.
摘要翻译：根据本发明的本具体文件确定装置包括微波传感器，用于向原稿照射微波并扫描原稿，检测被照射的微波的反射部分，输出第一检测信号，再次照射微波并扫描文件文件放置在接触玻璃上，检测被照射的微波的反射部分，并输出第二检测信号; 信号处理部分，用于使用第一检测信号作为参考信号，并将参考信号的电平与第二检测信号的电平进行比较，以确定金属纤维是否包括在文档中;以及控制器，根据信号处理部的判断结果，确定文件是否是特定的。

4. 发明授权

US4263087A Process for producing epitaxial layers 失效
标题翻译：生产外延层的方法
公开(公告)号：US4263087A
公开(公告)日：1981-04-21
申请号：US120094
申请日：1980-02-11
申请人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
发明人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
IPC分类号： C30B25/02 , C30B25/10 , C30B25/12 , H01L21/205 , H01L21/31 , C23C13/00
CPC分类号： C30B29/06 , C30B25/10 , C30B25/12 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.
摘要翻译：通过在不高于1333Pa（10Torr）的压力下将反应气体混合物引入到其中位于半导体衬底的反应容器中并通过高频感应功率加热所述半导体衬底以使得层外延生长来形成外延层在所述半导体衬底上。高频功率的频率f不高于50kHz，并且所述反应容器中的压力P保持在以下范围内：其中P是反应容器中的Pa或Torr单位的压力 f是所述高频功率的kHz的频率。

5. 发明授权

US5270224A Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit 失效
标题翻译：制造具有掺杂到超过溶解度极限的水平的区域的半导体器件的方法
公开(公告)号：US5270224A
公开(公告)日：1993-12-14
申请号：US822232
申请日：1992-01-17
申请人： Yuji Furumura , Fumitake Mieno , Tsutomu Nakazawa , Takashi Eshita , Mamoru Maeda , Tsunenori Yamauchi
发明人： Yuji Furumura , Fumitake Mieno , Tsutomu Nakazawa , Takashi Eshita , Mamoru Maeda , Tsunenori Yamauchi
IPC分类号： H01L29/08 , H01L29/16 , H01L29/36 , H01L29/737 , H01L21/265
CPC分类号： H01L29/7375 , H01L29/0817 , H01L29/1604 , H01L29/36 , Y10S148/123 , Y10S148/124 , Y10S148/155
摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.
摘要翻译：双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

6. 发明授权

US4394401A Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film 失效
标题翻译：磷硅玻璃薄膜等离子体增强化学气相沉积方法
公开(公告)号：US4394401A
公开(公告)日：1983-07-19
申请号：US290978
申请日：1981-08-07
申请人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
IPC分类号： C01B33/113 , C03C17/02 , C03C17/245 , C23C16/30 , C23C16/40 , C23C16/50 , C23C16/509 , C30B25/02 , C30B29/18 , H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/5096 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/31625
摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
摘要翻译：公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

7. 发明授权

US4275094A Process for high pressure oxidation of silicon 失效
标题翻译：硅高压氧化工艺
公开(公告)号：US4275094A
公开(公告)日：1981-06-23
申请号：US955755
申请日：1978-10-30
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.
摘要翻译：一种用于硅的高压氧化的方法，包括以下步骤：将硅晶片和氧化物质插入石英胶囊中，通过熔融气密地密封石英胶囊，并加热石英胶囊以在其中产生高压氧化气氛，并形成硅晶片上的氧化膜，而没有氧化气氛的流动。在使用水作为氧化物质的情况下，水被冻结，石英胶囊的内部空间在密封操作之前被排出。此外，在例如氧化气体的情况下，氧气用作氧化物质，如果气体的压力高于环境压力，则在密封操作之前，将石英胶囊冷却以将气体压力降低到低于环境压力的压力。

8. 发明授权

US5111266A Semiconductor device having a region doped to a level exceeding the solubility limit 失效
标题翻译：具有超过溶解度限制的区域的半导体器件
公开(公告)号：US5111266A
公开(公告)日：1992-05-05
申请号：US714367
申请日：1991-06-12
申请人： Yuji Furumura , Fumitake Mieno , Tsutomu Nakazawa , Takashi Eshita , Mamoru Maeda , Tsunenori Yamauchi
发明人： Yuji Furumura , Fumitake Mieno , Tsutomu Nakazawa , Takashi Eshita , Mamoru Maeda , Tsunenori Yamauchi
IPC分类号： H01L29/08 , H01L29/16 , H01L29/36 , H01L29/737
CPC分类号： H01L29/0817 , H01L29/1604 , H01L29/36 , H01L29/7375
摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

9. 发明授权

US4804560A Method of selectively depositing tungsten upon a semiconductor substrate 失效
标题翻译：在半导体衬底上选择性地沉积钨的方法
公开(公告)号：US4804560A
公开(公告)日：1989-02-14
申请号：US026900
申请日：1987-03-17
申请人： Yoshimi Shioya , Yasushi Oyama , Norihisa Tsuzuki , Mamoru Maeda , Masaaki Ichikawa , Fumitake Mieno , Shin-ichi Inoue , Yasuo Uo-ochi , Akira Tabuchi , Atsuhiro Tsukune , Takuya Watanabe , Takayuki Ohba
发明人： Yoshimi Shioya , Yasushi Oyama , Norihisa Tsuzuki , Mamoru Maeda , Masaaki Ichikawa , Fumitake Mieno , Shin-ichi Inoue , Yasuo Uo-ochi , Akira Tabuchi , Atsuhiro Tsukune , Takuya Watanabe , Takayuki Ohba
IPC分类号： H01L21/205 , C23C16/04 , C23C16/14 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , B05D5/12 , C23C16/00
CPC分类号： H01L21/28562 , H01L21/32051 , H01L21/76879
摘要： A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface. Aluminum film is deposited on the flat surface and patterned by lithography. The flat aluminum deposition allows fabrication of accurate and reliable wirings and facilitates production of VLSI of sub-micron order.
摘要翻译：一种在硅半导体衬底上选择性地沉积钨的方法。硅衬底涂覆有被图案化以提供用于形成电极或布线的开口的PSG或SiO 2的掩模膜。在开口中的基板的一部分上，通过CVD法从含有WF6和H2的气体混合物的大气层沉积厚度约为2000的钨层。在该处理中，钨核沉积在掩模膜的表面上也是如此。在这种核形成膜之前，中断沉积处理，并且将H 2气体进料到CVD装置中以产生HF，其蚀刻掩模膜的表面，因此除去钨原子。沉积和去除步骤重复几次，直到沉积的钨的高度和掩模膜的厚度基本上等于呈现平坦表面。铝膜沉积在平坦表面上并通过光刻图案化。扁平铝沉积允许制造准确可靠的布线，并有助于生产亚微米级VLSI。

10. 发明授权

US4625678A Apparatus for plasma chemical vapor deposition 失效
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US4625678A
公开(公告)日：1986-12-02
申请号：US740306
申请日：1985-06-03
申请人： Yoshimi Shioya , Mamoru Maeda , Yasushi Ohyama , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Yasushi Ohyama , Mikio Takagi
IPC分类号： C23C16/50 , C23C16/448 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , H01L21/20 , C23C13/08
CPC分类号： H01J37/3244 , C23C16/5096
摘要： A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.
摘要翻译：一种等离子体CVD装置，其通过将化合物的气体引入室内并通过施加高频电力将气体转化为等离子体而在基体上形成沉积膜，包括从所述室的外部引出的供气管室的内部和加热装置。加热装置加热室内的供气管的至少一部分，从而防止气体冷凝或凝固。使用这种装置，可以使用在室温下为液体或固体的各种化合物的气体来稳定地进行等离子体CVD。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式