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1. 发明授权

US4394401A Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film 失效
标题翻译：磷硅玻璃薄膜等离子体增强化学气相沉积方法
公开(公告)号：US4394401A
公开(公告)日：1983-07-19
申请号：US290978
申请日：1981-08-07
申请人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
IPC分类号： C01B33/113 , C03C17/02 , C03C17/245 , C23C16/30 , C23C16/40 , C23C16/50 , C23C16/509 , C30B25/02 , C30B29/18 , H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/5096 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/31625
摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
摘要翻译：公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

2. 发明授权

US4625678A Apparatus for plasma chemical vapor deposition 失效
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US4625678A
公开(公告)日：1986-12-02
申请号：US740306
申请日：1985-06-03
申请人： Yoshimi Shioya , Mamoru Maeda , Yasushi Ohyama , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Yasushi Ohyama , Mikio Takagi
IPC分类号： C23C16/50 , C23C16/448 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , H01L21/20 , C23C13/08
CPC分类号： H01J37/3244 , C23C16/5096
摘要： A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.
摘要翻译：一种等离子体CVD装置，其通过将化合物的气体引入室内并通过施加高频电力将气体转化为等离子体而在基体上形成沉积膜，包括从所述室的外部引出的供气管室的内部和加热装置。加热装置加热室内的供气管的至少一部分，从而防止气体冷凝或凝固。使用这种装置，可以使用在室温下为液体或固体的各种化合物的气体来稳定地进行等离子体CVD。

3. 发明授权

US4513026A Method for coating a semiconductor device with a phosphosilicate glass 失效
标题翻译：用磷硅玻璃涂覆半导体器件的方法
公开(公告)号：US4513026A
公开(公告)日：1985-04-23
申请号：US518329
申请日：1983-08-01
申请人： Hidekazu Miyamoto , Yoshimi Shioya , Mamoru Maeda , Mikio Takagi
发明人： Hidekazu Miyamoto , Yoshimi Shioya , Mamoru Maeda , Mikio Takagi
IPC分类号： C23C16/44 , C23C16/455 , H01L21/316
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45578 , H01L21/02129 , H01L21/02271 , H01L21/31625
摘要： A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof. Second, a silicon compound gas is introduced through one of the gas feed pipes into the reaction tube and an oxidizing gas is introduced through the other of the gas feed pipes into the reaction tube, while the inside of the reaction tube is maintained a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of the substrates.
摘要翻译：具有含有非实质量的氢和低磷浓度的沉积磷硅酸盐玻璃膜的半导体器件以高质量生产率被制造。该半导体器件通过首先在反应管中放置要处理的半导体器件的多个基板，使得基板的主表面相对于彼此大致垂直取向并且基本上垂直于反应管的中心轴线相交反应管设置有至少两个气体供给管，其具有沿其纵向方向刺穿的多个小开口。其次，将硅化合物气体通过气体供给管中的一个引入反应管中，并且将氧化气体通过另一个气体供给管引入反应管中，同时反应管的内部保持较低的压力，由此磷硅玻璃膜沉积在基板的主表面上。

4. 发明授权

US4363868A Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process 失效
标题翻译：通过在选择性氧化工艺中使用的等离子体CVD技术形成氮氧化硅层来制造半导体器件的工艺
公开(公告)号：US4363868A
公开(公告)日：1982-12-14
申请号：US219494
申请日：1980-12-23
申请人： Kanetake Takasaki , Mamoru Maeda
发明人： Kanetake Takasaki , Mamoru Maeda
IPC分类号： H01L21/318 , H01L21/314 , H01L21/316 , H01L21/32 , H01L21/762
CPC分类号： H01L21/76202 , H01L21/3145 , H01L21/32
摘要： A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.
摘要翻译：用于制造半导体器件的选择性氧化工艺包括通过等离子体化学气相沉积方法将硅氧氮化物层直接沉积在硅衬底上的步骤。在硅衬底的选择性氧化之后，去除氧氮化硅层。

5. 发明授权

US4804560A Method of selectively depositing tungsten upon a semiconductor substrate 失效
标题翻译：在半导体衬底上选择性地沉积钨的方法
公开(公告)号：US4804560A
公开(公告)日：1989-02-14
申请号：US026900
申请日：1987-03-17
申请人： Yoshimi Shioya , Yasushi Oyama , Norihisa Tsuzuki , Mamoru Maeda , Masaaki Ichikawa , Fumitake Mieno , Shin-ichi Inoue , Yasuo Uo-ochi , Akira Tabuchi , Atsuhiro Tsukune , Takuya Watanabe , Takayuki Ohba
发明人： Yoshimi Shioya , Yasushi Oyama , Norihisa Tsuzuki , Mamoru Maeda , Masaaki Ichikawa , Fumitake Mieno , Shin-ichi Inoue , Yasuo Uo-ochi , Akira Tabuchi , Atsuhiro Tsukune , Takuya Watanabe , Takayuki Ohba
IPC分类号： H01L21/205 , C23C16/04 , C23C16/14 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , B05D5/12 , C23C16/00
CPC分类号： H01L21/28562 , H01L21/32051 , H01L21/76879
摘要： A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface. Aluminum film is deposited on the flat surface and patterned by lithography. The flat aluminum deposition allows fabrication of accurate and reliable wirings and facilitates production of VLSI of sub-micron order.
摘要翻译：一种在硅半导体衬底上选择性地沉积钨的方法。硅衬底涂覆有被图案化以提供用于形成电极或布线的开口的PSG或SiO 2的掩模膜。在开口中的基板的一部分上，通过CVD法从含有WF6和H2的气体混合物的大气层沉积厚度约为2000的钨层。在该处理中，钨核沉积在掩模膜的表面上也是如此。在这种核形成膜之前，中断沉积处理，并且将H 2气体进料到CVD装置中以产生HF，其蚀刻掩模膜的表面，因此除去钨原子。沉积和去除步骤重复几次，直到沉积的钨的高度和掩模膜的厚度基本上等于呈现平坦表面。铝膜沉积在平坦表面上并通过光刻图案化。扁平铝沉积允许制造准确可靠的布线，并有助于生产亚微米级VLSI。

6. 发明授权

US4263087A Process for producing epitaxial layers 失效
标题翻译：生产外延层的方法
公开(公告)号：US4263087A
公开(公告)日：1981-04-21
申请号：US120094
申请日：1980-02-11
申请人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
发明人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
IPC分类号： C30B25/02 , C30B25/10 , C30B25/12 , H01L21/205 , H01L21/31 , C23C13/00
CPC分类号： C30B29/06 , C30B25/10 , C30B25/12 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.
摘要翻译：通过在不高于1333Pa（10Torr）的压力下将反应气体混合物引入到其中位于半导体衬底的反应容器中并通过高频感应功率加热所述半导体衬底以使得层外延生长来形成外延层在所述半导体衬底上。高频功率的频率f不高于50kHz，并且所述反应容器中的压力P保持在以下范围内：其中P是反应容器中的Pa或Torr单位的压力 f是所述高频功率的kHz的频率。

7. 发明授权

US4275094A Process for high pressure oxidation of silicon 失效
标题翻译：硅高压氧化工艺
公开(公告)号：US4275094A
公开(公告)日：1981-06-23
申请号：US955755
申请日：1978-10-30
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.
摘要翻译：一种用于硅的高压氧化的方法，包括以下步骤：将硅晶片和氧化物质插入石英胶囊中，通过熔融气密地密封石英胶囊，并加热石英胶囊以在其中产生高压氧化气氛，并形成硅晶片上的氧化膜，而没有氧化气氛的流动。在使用水作为氧化物质的情况下，水被冻结，石英胶囊的内部空间在密封操作之前被排出。此外，在例如氧化气体的情况下，氧气用作氧化物质，如果气体的压力高于环境压力，则在密封操作之前，将石英胶囊冷却以将气体压力降低到低于环境压力的压力。

8. 发明授权

US4293590A Process for high pressure oxidation of silicon 失效
公开(公告)号：US4293590A
公开(公告)日：1981-10-06
申请号：US192813
申请日：1980-10-01
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

9. 发明授权

US4293589A Process for high pressure oxidation of silicon 失效
公开(公告)号：US4293589A
公开(公告)日：1981-10-06
申请号：US192812
申请日：1980-10-01
申请人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
发明人： Mikio Takagi , Mamoru Maeda , Hajime Kamioka
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： H01L21/02238 , C30B33/005 , H01L21/02255 , H01L21/31662
摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

10. 发明授权

US4366506A Picture transfer method and apparatus therefor 失效
标题翻译：图像传送方法及其装置
公开(公告)号：US4366506A
公开(公告)日：1982-12-28
申请号：US271239
申请日：1981-06-08
申请人： Koichi Ejiri , Morisumi Kurose , Mamoru Maeda
发明人： Koichi Ejiri , Morisumi Kurose , Mamoru Maeda
IPC分类号： H03M7/46 , H04N1/41 , H04N1/411 , H04N7/12
CPC分类号： H04N1/411
摘要： A system for sampling binary value images of white and black and efficiently encoding and decoding them is disclosed. An image is sampled to form a plurality of small picture cells. The small picture cells are merged in groups of four to form a plurality of large picture cells. At least one least frequently occurring density level is determined for the plurality of large picture cells. The least frequently occurring density level is converted to an adjacent density level. The density levels for the picture cells are then encoded and transmitted to a receiver. At the receiving end, the encoded large picture cells are decoded to form a plurality of restored large picture cells. Each restored large picture cell is divided into four small restored picture cells by comparing its density level with that of four neighboring large restored picture cells.
摘要翻译：公开了一种用于对白和黑二进制值图像进行采样并对其进行有效编码和解码的系统。对图像进行采样以形成多个小图像单元。小图像单元以四组合并形成多个大图像单元。为多个大图像单元确定至少一个最不频繁出现的浓度水平。最不发生的密度水平被转换为相邻的密度水平。然后将图像单元的密度级别编码并发送到接收器。在接收端，编码的大图像单元被解码以形成多个恢复的大图像单元。将每个恢复的大图像单元通过将其密度水平与四个相邻的大的恢复图像单元的密度水平进行比较而被分为四个小的恢复图像单元

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