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1. 发明授权

US08513079B2 TFT SAS memory cell structures 有权
标题翻译： TFT SAS存储单元结构
公开(公告)号：US08513079B2
公开(公告)日：2013-08-20
申请号：US12259144
申请日：2008-10-27
申请人： Fumitake Mieno
发明人： Fumitake Mieno
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L29/4234 , H01L29/517 , H01L29/66757 , H01L29/66833 , H01L29/792
摘要： A device having thin-film transistor (TFT) silicon-aluminum oxide-silicon (SAS) memory cell structures is provided. The device includes a substrate, a dielectric layer on the substrate, and one or more source or drain regions being embedded in the dielectric layer. the dielectric layer being associated with a first surface. Each of the one or more source or drain regions includes an N+ polysilicon layer on a diffusion barrier layer which is on a conductive layer. The N+ polysilicon layer has a second surface substantially co-planar with the first surface. Additionally, the device includes a P− polysilicon layer overlying the co-planar surface, an aluminum oxide layer overlying the P− polysilicon layer; and at least one control gate overlying the aluminum oxide layer. In a specific embodiment, the control gate is made of highly doped P+ polysilicon. A method for making the TFT SAS memory cell structure is provided and can be repeated to integrate the structure three-dimensionally.
摘要翻译：提供一种具有薄膜晶体管（TFT）硅 - 氧化铝 - 硅（SAS）存储单元结构的器件。该器件包括衬底，衬底上的电介质层，以及嵌入电介质层中的一个或多个源极或漏极区域。介电层与第一表面相关联。所述一个或多个源区或漏区中的每一个包括在导电层上的扩散阻挡层上的N +多晶硅层。 N +多晶硅层具有与第一表面基本共面的第二表面。另外，该器件包括覆盖共面表面的P-多晶硅层，覆盖在P-多晶硅层上的氧化铝层; 以及覆盖氧化铝层的至少一个控制栅极。在具体实施例中，控制栅由高掺杂P +多晶硅制成。提供了用于制造TFT SAS存储单元结构的方法，并且可以重复三维地集成结构。

2. 发明申请

US20130140576A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130140576A1
公开(公告)日：2013-06-06
申请号：US13369782
申请日：2012-02-09
申请人： FUMITAKE MIENO , Meisheng Zhou
发明人： FUMITAKE MIENO , Meisheng Zhou
IPC分类号： H01L29/78 , H01L21/36 , H01L21/336
CPC分类号： H01L29/78 , H01L29/1083 , H01L29/66636
摘要： A semiconductor device, and a method for manufacturing the same, comprises a source/drain region formed using a solid phase epitaxy (SPE) process to provide partially isolated source/drain transistors. Amorphous semiconductor material at the source/drain region is crystallized and then shrunk through annealing, to apply tensile stress in the channel direction.
摘要翻译：半导体器件及其制造方法包括使用固相外延（SPE）工艺形成的源极/漏极区域，以提供部分隔离的源极/漏极晶体管。源极/漏极区域的非晶半导体材料结晶，然后通过退火而收缩，以在沟道方向施加拉伸应力。

3. 发明授权

US08415218B2 Atomic layer deposition epitaxial silicon growth for TFT flash memory cell 有权
标题翻译：用于TFT闪存单元的原子层沉积外延硅生长
公开(公告)号：US08415218B2
公开(公告)日：2013-04-09
申请号：US12259128
申请日：2008-10-27
申请人： Fumitake Mieno
发明人： Fumitake Mieno
IPC分类号： H01L21/336 , H01L21/20 , H01L21/36 , H01L21/00 , C23C16/24 , H01L29/06 , H01L47/02 , H01L29/04 , H01L29/15 , H01L31/036 , H01L29/80 , H01L29/76 , H01L29/788 , H01L21/70
CPC分类号： H01L21/02381 , H01L21/02488 , H01L21/02499 , H01L21/02532 , H01L21/0262 , H01L21/28273 , H01L27/11521 , H01L29/66825 , H01L29/78672
摘要： A method of growing an epitaxial silicon layer is provided. The method comprising providing a substrate including an oxygen-terminated silicon surface and forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface. Additionally, the method includes forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface through atomic-layer deposition (ALD) epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. The second hydrogen-terminated silicon surface is capable of being added one or more layer of silicon through ALD epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. In one embodiment, the method is applied for making devices with thin-film transistor (TFT) floating gate memory cell structures which is capable for three-dimensional integration.
摘要翻译：提供了生长外延硅层的方法。该方法包括提供包含氧封端的硅表面的衬底，并在氧封端的硅表面上形成第一个氢封端的硅表面。此外，该方法包括通过原子层沉积（ALD）外延从由Ar流和闪光灯退火辅助的SiH 4热裂解基团连续形成在第一氢封端硅表面上的第二氢封端硅表面。第二个氢封端的硅表面能够连续地由Ar流和闪光灯退火辅助的SiH 4热裂解基团通过ALD外延添加一层或多层硅。在一个实施例中，该方法被应用于制造具有能够进行三维集成的薄膜晶体管（TFT）浮动栅极存储单元结构的器件。

4. 发明授权

US08105920B2 Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof 有权
标题翻译：具有非晶硅mas存储单元结构的半导体器件及其制造方法
公开(公告)号：US08105920B2
公开(公告)日：2012-01-31
申请号：US12259015
申请日：2008-10-27
申请人： Fumitake Mieno
发明人： Fumitake Mieno
IPC分类号： H01L21/00
CPC分类号： H01L29/792 , H01L27/11568 , H01L27/12 , H01L29/8616
摘要： A semiconductor device with an amorphous silicon (a-Si) metal-aluminum oxide-semiconductor (MAS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric layer with a co-planar surface of n-type a-Si and the dielectric layer. Additionally, the device includes a p-i-n a-Si diode junction. The device further includes an aluminum oxide charge trapping layer on the a-Si p-i-n diode junction and a metal control gate overlying the aluminum oxide layer. A method is provided for making the a-Si MAS memory cell structure and can be repeated to integrate the structure three-dimensionally.
摘要翻译：具有非晶硅（a-Si）金属 - 氧化铝半导体（MAS）存储单元结构的半导体器件。该器件包括衬底，覆盖在衬底上的电介质层，以及嵌入电介质层中的一个或多个源极或漏极区域，其中n型a-Si的共面表面和电介质层。另外，器件包括p-i-n a-Si二极管结。该器件还包括在a-Si p-i-n二极管结上的氧化铝电荷俘获层和覆盖氧化铝层的金属控制栅极。提供了一种用于制造a-Si MAS存储单元结构并且可以重复三维地集成结构的方法。

5. 发明申请

US20110065281A1 METHOD OF RAPID THERMAL TREATMENT USING HIGH ENERGY ELECTROMAGNETIC RADIATION OF A SEMICONDUCTOR SUBSTRATE FOR FORMATION OF EPITAXIAL MATERIALS 有权
标题翻译：使用半导体基板的高能电磁辐射形成外源材料的快速热处理方法
公开(公告)号：US20110065281A1
公开(公告)日：2011-03-17
申请号：US12869620
申请日：2010-08-26
申请人： DAVID GAO , Fumitake Mieno
发明人： DAVID GAO , Fumitake Mieno
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/823807 , H01L21/823814 , H01L29/7848
摘要： A method for fabricating semiconductor devices includes providing a semiconductor substrate having a surface region containing one or more contaminants and having an overlying oxide layer. In an embodiment, the one or more contaminants are at least a carbon species. The method includes processing the surface region using at least a wet processing process to selectively remove the overlying oxide layer and expose the surface region including the one or more contaminants. The method includes subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants. The method includes removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.
摘要翻译：一种制造半导体器件的方法包括提供具有包含一种或多种污染物并具有上覆氧化物层的表面区域的半导体衬底。在一个实施方案中，一种或多种污染物是至少一种碳物质。该方法包括使用至少湿法处理工艺来处理表面区域，以选择性地去除上覆的氧化物层并暴露包括一种或多种污染物的表面区域。该方法包括使表面区域经受约300至约800纳米的波长范围为小于1秒的高能电磁辐射，以将表面区域的温度升高到大于1000摄氏度，以除去一个或更多的污染物。该方法包括去除高能量电磁辐射，以在小于1秒的时间段内将温度降低到约300至约600摄氏度。

6. 发明授权

US07709386B2 Atomic layer deposition method and semiconductor device formed by the same 有权
标题翻译：原子层沉积法和由其形成的半导体器件
公开(公告)号：US07709386B2
公开(公告)日：2010-05-04
申请号：US12141045
申请日：2008-06-17
申请人： Hua Ji , Min-Hwa Chi , Fumitake Mieno
发明人： Hua Ji , Min-Hwa Chi , Fumitake Mieno
IPC分类号： H01L21/44
CPC分类号： H01L21/0228 , C23C16/45529 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/28282 , H01L21/3141 , H01L21/31645 , H01L21/318 , H01L21/3185 , H01L27/11563
摘要： There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within the ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; and forming a second discrete compound monolayer above the semiconductor substrate by the same process as that for forming the first discrete compound monolayer. There is also provided a semiconductor device in which the charge trapping layer is a dielectric layer containing the first and second discrete compound monolayers formed by the ALD method.
摘要翻译：提供了一种制造半导体器件的方法，包括以下步骤：将第一前体气体流到ALD室内的半导体衬底，以在半导体衬底上形成第一离散单层; 将惰性吹扫气体流入ALD室内的半导体衬底; 使第二前体气体流到ALD室以与形成第一单层的第一前体气体反应，从而形成第一离散化合物单层; 并流动惰性吹扫气体; 以及通过与形成第一离散化合物单层相同的方法在半导体衬底上方形成第二离散化合物单层。还提供了一种半导体器件，其中电荷捕获层是包含通过ALD法形成的第一和第二离散化合物单层的介电层。

7. 发明申请

US20100009528A1 Method for Rapid Thermal Treatment Using High Energy Electromagnetic Radiation of a Semiconductor Substrate for Formation of Dielectric Films 有权
标题翻译：用于形成介质膜的半导体基板的高能电磁辐射的快速热处理方法
公开(公告)号：US20100009528A1
公开(公告)日：2010-01-14
申请号：US12259095
申请日：2008-10-27
申请人： David GAO , Fumitake Mieno
发明人： David GAO , Fumitake Mieno
IPC分类号： H01L21/28 , H01L21/31
CPC分类号： H01L21/31654 , H01L21/02233 , H01L21/268 , H01L21/2686 , H01L21/28211 , H01L21/28282
摘要： A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface region to a wet cleaning process to remove a native oxide layer from the surface region. In a specific embodiment, the method includes subjecting the surface region to an oxygen bearing environment and subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 10 milli-seconds to increase a temperature of the surface region to greater than 1000 Degrees Celsius. In a specific embodiment, the method causes formation of an oxide layer having a thickness of less than 10 Angstroms. In a preferred embodiment, the oxide layer is substantially free from pinholes and other imperfections. In a specific embodiment, the oxide layer is a gate oxide layer.
摘要翻译：一种制造半导体器件的方法，例如SONOS电池。该方法包括提供具有自然氧化物层的具有表面区域的半导体衬底（例如，硅晶片，绝缘体上硅）。该方法包括将表面区域处理为湿清洗工艺以从表面区域去除自然氧化物层。在一个具体实施方案中，该方法包括使表面区域承受含氧环境，并使表面区域经受波长为约300至约800纳米的高能电磁辐射，持续时间小于10毫秒至将表面区域的温度增加到大于1000摄氏度。在一个具体实施方案中，该方法导致形成厚度小于10埃的氧化物层。在优选实施例中，氧化物层基本上没有针孔和其它缺陷。在具体实施方案中，氧化物层是栅极氧化物层。

8. 发明授权

US06300217B1 Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof 失效
标题翻译：一种制造半导体器件的方法，包括用于形成非晶硅层的步骤，接着进行结晶
公开(公告)号：US06300217B1
公开(公告)日：2001-10-09
申请号：US09069170
申请日：1998-04-29
申请人： Masaki Kuramae , Fumitake Mieno
发明人： Masaki Kuramae , Fumitake Mieno
IPC分类号： H01L2120
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/2022 , H01L28/84 , H01L28/87 , Y10S438/901
摘要： A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer with an oxidation gas. The forming step occurs before crystallization of the amorphous silicon layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上沉积非晶硅层，并通过用氧化气体处理非晶硅层的表面，在非晶硅层的表面上形成氧化膜。形成步骤在非晶硅层结晶之前发生。

9. 发明授权

US5518937A Semiconductor device having a region doped to a level exceeding the solubility limit 失效
标题翻译：具有掺杂到超过溶解度极限的水平的区域的半导体器件
公开(公告)号：US5518937A
公开(公告)日：1996-05-21
申请号：US407254
申请日：1995-03-20
申请人： Yuji Furumura , Fumitake Mieno , Tsutomu Nakazawa , Takashi Eshita , Mamoru Maeda , Tsunenori Yamauchi
发明人： Yuji Furumura , Fumitake Mieno , Tsutomu Nakazawa , Takashi Eshita , Mamoru Maeda , Tsunenori Yamauchi
IPC分类号： H01L29/08 , H01L29/16 , H01L29/36 , H01L29/737 , H01L21/265
CPC分类号： H01L29/0817 , H01L29/1604 , H01L29/36 , H01L29/7375
摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.
摘要翻译：双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

10. 发明授权

US09478654B2 Method for manufacturing semiconductor device with tensile stress 有权
标题翻译：制造具有拉伸应力的半导体器件的方法
公开(公告)号：US09478654B2
公开(公告)日：2016-10-25
申请号：US13369782
申请日：2012-02-09
申请人： Fumitake Mieno , Meisheng Zhou
发明人： Fumitake Mieno , Meisheng Zhou
IPC分类号： H01L21/336 , H01L29/78 , H01L29/66 , H01L29/10
CPC分类号： H01L29/78 , H01L29/1083 , H01L29/66636
摘要： A semiconductor device, and a method for manufacturing the same, comprises a source/drain region formed using a solid phase epitaxy (SPE) process to provide partially isolated source/drain transistors. Amorphous semiconductor material at the source/drain region is crystallized and then shrunk through annealing, to apply tensile stress in the channel direction.
摘要翻译：半导体器件及其制造方法包括使用固相外延（SPE）工艺形成的源极/漏极区域，以提供部分隔离的源极/漏极晶体管。源极/漏极区域的非晶半导体材料结晶，然后通过退火而收缩，以在沟道方向施加拉伸应力。

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