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1. 发明授权

US4394401A Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film 失效
标题翻译：磷硅玻璃薄膜等离子体增强化学气相沉积方法
公开(公告)号：US4394401A
公开(公告)日：1983-07-19
申请号：US290978
申请日：1981-08-07
申请人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Kanetake Takasaki , Mikio Takagi
IPC分类号： C01B33/113 , C03C17/02 , C03C17/245 , C23C16/30 , C23C16/40 , C23C16/50 , C23C16/509 , C30B25/02 , C30B29/18 , H01L21/316
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/5096 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/31625
摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
摘要翻译：公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

2. 发明授权

US4625678A Apparatus for plasma chemical vapor deposition 失效
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US4625678A
公开(公告)日：1986-12-02
申请号：US740306
申请日：1985-06-03
申请人： Yoshimi Shioya , Mamoru Maeda , Yasushi Ohyama , Mikio Takagi
发明人： Yoshimi Shioya , Mamoru Maeda , Yasushi Ohyama , Mikio Takagi
IPC分类号： C23C16/50 , C23C16/448 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , H01L21/20 , C23C13/08
CPC分类号： H01J37/3244 , C23C16/5096
摘要： A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.
摘要翻译：一种等离子体CVD装置，其通过将化合物的气体引入室内并通过施加高频电力将气体转化为等离子体而在基体上形成沉积膜，包括从所述室的外部引出的供气管室的内部和加热装置。加热装置加热室内的供气管的至少一部分，从而防止气体冷凝或凝固。使用这种装置，可以使用在室温下为液体或固体的各种化合物的气体来稳定地进行等离子体CVD。

3. 发明授权

US4513026A Method for coating a semiconductor device with a phosphosilicate glass 失效
标题翻译：用磷硅玻璃涂覆半导体器件的方法
公开(公告)号：US4513026A
公开(公告)日：1985-04-23
申请号：US518329
申请日：1983-08-01
申请人： Hidekazu Miyamoto , Yoshimi Shioya , Mamoru Maeda , Mikio Takagi
发明人： Hidekazu Miyamoto , Yoshimi Shioya , Mamoru Maeda , Mikio Takagi
IPC分类号： C23C16/44 , C23C16/455 , H01L21/316
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45578 , H01L21/02129 , H01L21/02271 , H01L21/31625
摘要： A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof. Second, a silicon compound gas is introduced through one of the gas feed pipes into the reaction tube and an oxidizing gas is introduced through the other of the gas feed pipes into the reaction tube, while the inside of the reaction tube is maintained a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of the substrates.
摘要翻译：具有含有非实质量的氢和低磷浓度的沉积磷硅酸盐玻璃膜的半导体器件以高质量生产率被制造。该半导体器件通过首先在反应管中放置要处理的半导体器件的多个基板，使得基板的主表面相对于彼此大致垂直取向并且基本上垂直于反应管的中心轴线相交反应管设置有至少两个气体供给管，其具有沿其纵向方向刺穿的多个小开口。其次，将硅化合物气体通过气体供给管中的一个引入反应管中，并且将氧化气体通过另一个气体供给管引入反应管中，同时反应管的内部保持较低的压力，由此磷硅玻璃膜沉积在基板的主表面上。

4. 发明授权

US4406053A Process for manufacturing a semiconductor device having a non-porous passivation layer 失效
标题翻译：制造具有无孔钝化层的半导体器件的方法
公开(公告)号：US4406053A
公开(公告)日：1983-09-27
申请号：US289296
申请日：1981-07-31
申请人： Kanetake Takasaki , Yoshimi Shioya
发明人： Kanetake Takasaki , Yoshimi Shioya
IPC分类号： H01L21/268 , H01L21/3105 , H01L21/314 , H01L21/321 , H01L21/56
CPC分类号： H01L21/314 , H01L21/268 , H01L21/3105 , H01L21/321 , Y10S438/958
摘要： A process for manufacturing a semiconductor device comprises the step of annealing a porous passivation layer which is deposited on the surface of the device and which covers metallization layers fabricated thereon, by irradiating a laser beam on the passivation layer so as to densify the passivation layer, while the laser beam scans the surface of the passivation layer.
摘要翻译：制造半导体器件的方法包括以下步骤：通过在激光束上照射钝化层来钝化沉积在器件的表面上并覆盖其上制造的金属化层的多孔钝化层，从而使钝化层致密化，而激光束扫描钝化层的表面。

5. 发明授权

US4487787A Method of growing silicate glass layers employing chemical vapor deposition process 失效
标题翻译：使用化学气相沉积工艺生长硅酸盐玻璃层的方法
公开(公告)号：US4487787A
公开(公告)日：1984-12-11
申请号：US436294
申请日：1982-10-25
申请人： Yoshimi Shioya , Mikio Takagi
发明人： Yoshimi Shioya , Mikio Takagi
IPC分类号： C23C16/40 , C23C16/455 , C30B31/02 , H01L21/225 , H01L21/316
CPC分类号： H01L21/31625 , C23C16/401 , C23C16/455 , C30B29/06 , C30B31/02 , H01L21/02129 , H01L21/02271 , H01L21/2255
摘要： Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapor deposition process. The flow rate regulation is possible by monitoring readings of a manometer which is arranged around the inlets thereof and which was calibrated by the flow rate of a nonreactive gas such as nitrogen gas.
摘要翻译：使用化学气相沉积工艺沉积在半导体衬底上的PSG中掺杂的杂质浓度取决于同时在一批中用相同设备处理的多个半导体衬底中的第一个半导体衬底附近的反应气体的流速。同时在同一设备中处理的多个半导体衬底中的第一个半导体衬底附近的反应气体的流量的调节对于所加工的所有半导体衬底均匀掺杂PSG中的杂质浓度是有效的在一批中使用目前可用的真空气相沉积工艺的密封管式设备。通过监测布置在其入口周围的压力计的读数并且通过诸如氮气的非反应性气体的流量校准的流量调节是可能的。

6. 发明授权

US4804560A Method of selectively depositing tungsten upon a semiconductor substrate 失效
标题翻译：在半导体衬底上选择性地沉积钨的方法
公开(公告)号：US4804560A
公开(公告)日：1989-02-14
申请号：US026900
申请日：1987-03-17
申请人： Yoshimi Shioya , Yasushi Oyama , Norihisa Tsuzuki , Mamoru Maeda , Masaaki Ichikawa , Fumitake Mieno , Shin-ichi Inoue , Yasuo Uo-ochi , Akira Tabuchi , Atsuhiro Tsukune , Takuya Watanabe , Takayuki Ohba
发明人： Yoshimi Shioya , Yasushi Oyama , Norihisa Tsuzuki , Mamoru Maeda , Masaaki Ichikawa , Fumitake Mieno , Shin-ichi Inoue , Yasuo Uo-ochi , Akira Tabuchi , Atsuhiro Tsukune , Takuya Watanabe , Takayuki Ohba
IPC分类号： H01L21/205 , C23C16/04 , C23C16/14 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , B05D5/12 , C23C16/00
CPC分类号： H01L21/28562 , H01L21/32051 , H01L21/76879
摘要： A method of selectively depositing tungsten upon a silicon semiconductor substrate. A silicon substrate is coated with a masking film of PSG or SiO.sub.2 that is patterned to provide an opening for forming an electrode or wiring. On a portion of the substrate in the opening, a layer of tungsten having a thickness of approximately 2000 .ANG. is deposited by a CVD method from an atomosphere containing a gaseous mixture of WF.sub.6 and H.sub.2 . During this processing, tungsten nucleuses deposit on the surface of the masking film as well. Before such nucleuses form a film, the deposition processing is discontinued and H.sub.2 gas is fed into the CVD apparatus to produce HF, which etches the surface of the masking film, and thus tungsten nucleuses are removed. The deposition and removal steps are repeated several times until the height of the deposited tungsten and the thickness of the masking film are essentially equal to present a flat surface. Aluminum film is deposited on the flat surface and patterned by lithography. The flat aluminum deposition allows fabrication of accurate and reliable wirings and facilitates production of VLSI of sub-micron order.
摘要翻译：一种在硅半导体衬底上选择性地沉积钨的方法。硅衬底涂覆有被图案化以提供用于形成电极或布线的开口的PSG或SiO 2的掩模膜。在开口中的基板的一部分上，通过CVD法从含有WF6和H2的气体混合物的大气层沉积厚度约为2000的钨层。在该处理中，钨核沉积在掩模膜的表面上也是如此。在这种核形成膜之前，中断沉积处理，并且将H 2气体进料到CVD装置中以产生HF，其蚀刻掩模膜的表面，因此除去钨原子。沉积和去除步骤重复几次，直到沉积的钨的高度和掩模膜的厚度基本上等于呈现平坦表面。铝膜沉积在平坦表面上并通过光刻图案化。扁平铝沉积允许制造准确可靠的布线，并有助于生产亚微米级VLSI。

7. 发明授权

US07132171B2 Low dielectric constant insulating film and method of forming the same 有权
公开(公告)号：US07132171B2
公开(公告)日：2006-11-07
申请号：US10847670
申请日：2004-05-18
申请人： Toshiyuki Ohdaira , Yoshimi Shioya
发明人： Toshiyuki Ohdaira , Yoshimi Shioya
IPC分类号： B32B25/20
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02137 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3122 , H01L21/31612 , H01L21/31633 , Y10T428/31663
摘要： The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.

8. 发明授权

US06642157B2 Film forming method and semiconductor device 有权
标题翻译：成膜方法和半导体器件
公开(公告)号：US06642157B2
公开(公告)日：2003-11-04
申请号：US09742242
申请日：2000-12-22
申请人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
发明人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02274 , C23C16/308 , C23C16/402 , H01L21/02126 , H01L21/02216 , H01L21/31116 , H01L21/3122 , H01L21/3145 , H01L21/31612 , H01L21/31695 , H01L21/76802
摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
摘要翻译：提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

9. 发明授权

US06630412B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06630412B2
公开(公告)日：2003-10-07
申请号：US09897069
申请日：2001-07-03
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/308 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76834
摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

10. 发明申请

US20060251825A1 Low dielectric constant insulating film and method of forming the same 审中-公开
标题翻译：低介电常数绝缘膜及其形成方法
公开(公告)号：US20060251825A1
公开(公告)日：2006-11-09
申请号：US11474348
申请日：2006-06-26
申请人： Toshiyuki Ohdaira , Yoshimi Shioya
发明人： Toshiyuki Ohdaira , Yoshimi Shioya
IPC分类号： B05D3/06
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02137 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3122 , H01L21/31612 , H01L21/31633 , Y10T428/31663
摘要： The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.
摘要翻译：本发明涉及形成低介电常数绝缘膜的方法。其结构具有以下步骤：（a）在基板上的Si-O-Si的骨架中形成含有Si-CH 3键的绝缘膜; （b）在减压气氛中对绝缘膜照射紫外线，以从绝缘膜中的Si-CH 3键断开CH 3 3个基团; 和（c）从绝缘膜喷出断裂的CH 3 3个基团。

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