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1. 发明授权

US5610405A Electronic device for measuring light properties 失效
标题翻译：用于测量光性能的电子设备
公开(公告)号：US5610405A
公开(公告)日：1997-03-11
申请号：US216529
申请日：1994-03-23
申请人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
发明人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
IPC分类号： G11B11/08 , G11B11/12 , G11C7/00 , G11C13/04 , G01J1/24 , G01J1/42
CPC分类号： G11C7/005 , G11B11/08 , G11B11/12 , G11C13/047
摘要： An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first electromagnetic emission, (which may include visible light, ultraviolet light, gamma rays, or x-rays) having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with a second electromagnetic emission having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first emission can be known by measuring the induced photocurrent.
摘要翻译：一种电子设备，包括具有光电导性，能带隙和陷阱水平的材料。该材料以多晶金刚石薄膜为代表。该材料用具有小于材料的能带隙的光子能量的第一电磁发射（其可以包括可见光，紫外光，γ射线或X射线）照射。然后，用具有大于材料的能带隙的光子能量的第二电磁发射来照射材料，从而引起光电流。通过测量感应的光电流可以知道第一次发射的量。

2. 发明授权

US5670777A Photosensitive device and two frequency driving method thereof 失效
标题翻译：感光装置及其两种频率驱动方法
公开(公告)号：US5670777A
公开(公告)日：1997-09-23
申请号：US422544
申请日：1995-04-12
申请人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
发明人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
IPC分类号： G01J1/02 , G01J1/42 , G11B7/0045 , G11B7/005 , G11B7/125 , H01L21/00
CPC分类号： G01J1/429 , G11B7/00455 , G11B7/0052 , G11B7/127
摘要： An electronic device utilizing a material having: a photoconductive effect; a trap level for trapping an excited carrier; and an energy band gap, the device comprising: a means for illuminating the material with a first light, the first light having a wavelength corresponding to an energy higher than the energy band gap of the material; a means for illuminating the material with a second light, the second light having a wavelength corresponding to an energy lower than the energy band gap of the material; a means for measuring the quantity of second light transmitted through the material; and a means for obtaining information on the first light illuminated to the material from the quantity of the transmitted second light.
摘要翻译：一种利用具有光导效应的材料的电子装置; 捕获激动的载体的陷阱水平; 和能带隙，所述装置包括：用第一光照射所述材料的装置，所述第一光具有对应于高于所述材料的能带隙的能量的波长; 用于用第二光照射材料的装置，所述第二光具有对应于低于所述材料的能带隙的能量的波长; 用于测量透过材料的第二光的量的装置; 以及用于从所发送的第二光的量获得关于材料照射的第一光的信息的装置。

3. 发明授权

US5608666A Optical memory apparatus using first and second illuminating lights for writing and reading 失效
标题翻译：使用第一和第二照明灯进行写入和读取的光学存储装置
公开(公告)号：US5608666A
公开(公告)日：1997-03-04
申请号：US380698
申请日：1995-01-30
申请人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
发明人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
IPC分类号： G11B11/08 , G11B11/12 , G11C7/00 , G11C13/04
CPC分类号： G11C7/005 , G11B11/08 , G11B11/12 , G11C13/047
摘要： An electronic apparatus comprising a material having a photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first light having photon energies greater than the energy bandgap of the material. Then, the material is illuminated with a second light having photon energies smaller than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.
摘要翻译：一种电子设备，包括具有光电导性，能带隙和陷阱水平的材料。该材料以多晶金刚石薄膜为代表。材料用具有大于材料的能带隙的光子能量的第一光照射。然后，用具有小于材料的能带隙的光子能量的第二光照射材料，从而引起光电流。通过测量感应的光电流可以知道第一光的量。

4. 发明授权

US5717215A Electronic device for reading information stored in a substance 失效
标题翻译：用于读取存储在物质中的信息的电子设备
公开(公告)号：US5717215A
公开(公告)日：1998-02-10
申请号：US627422
申请日：1996-04-04
申请人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
发明人： Takashi Inushima , Rimantas Vaitkus , Satoshi Teramoto
IPC分类号： G11B11/08 , G11B11/12 , G11C7/00 , G11C13/04 , G01J1/44
CPC分类号： G11C7/005 , G11B11/08 , G11B11/12 , G11C13/047
摘要： An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with first light having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with second light having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.
摘要翻译：一种电子设备，包括具有光电导性，能带隙和陷阱水平的材料。该材料以多晶金刚石薄膜为代表。该材料用具有小于材料的能带隙的光子能量的第一光照射。然后，用具有大于材料的能带隙的光子能量的第二光照射材料，从而引起光电流。通过测量感应的光电流可以知道第一光的量。

5. 发明授权

US5469424A Electronic device utilizing a material capable of storing information which is readable by illumination 失效
标题翻译：利用能够存储可通过照明读取的信息的材料的电子设备
公开(公告)号：US5469424A
公开(公告)日：1995-11-21
申请号：US199955
申请日：1994-02-22
申请人： Takashi Inushima , Rimantas Vaitkus
发明人： Takashi Inushima , Rimantas Vaitkus
IPC分类号： G01J1/42 , G11B11/08 , G11C13/04 , G01J1/02
CPC分类号： G01J1/429 , G11B11/08 , G11C13/047
摘要： An electronic device comprising a diamond illuminated with ultraviolet radiation, a light source for illuminating the diamond with visible light, and a means for measuring a photocurrent induced in the diamond. The ultraviolet radiation has wavelengths shorter than about 230 nm corresponding to the energy bandgap of the diamond and is made to impinge on the diamond. Then, the light which has wavelengths longer than about 230 nm is made to impinge on the diamond. The photocurrent induced in the diamond is measured. In this way, the amount of the previously emitted ultraviolet radiation having wavelengths shorter than about 230 nm is known. Although the diamond is a primary substance to be illuminated, the substance to be illuminated comprises a material selected from a group consisting of diamond, boron nitride, aluminum nitride and a multi-layer thereof.
摘要翻译：一种电子设备，包括用紫外线照射的金刚石，用可见光照射金刚石的光源，以及用于测量在金刚石中引起的光电流的装置。紫外线辐射具有短于约230nm的波长，对应于金刚石的能量带隙并使其撞击在金刚石上。然后，使波长超过约230nm的光照射在金刚石上。测量在金刚石中诱发的光电流。以这种方式，已知波长短于约230nm的先前发射的紫外线辐射的量。虽然金刚石是要被照明的主要物质，但被照射的物质包括选自金刚石，氮化硼，氮化铝及其多层的材料。

6. 发明授权

US5622586A Method of fabricating device made of thin diamond foil 失效
标题翻译：制造薄金刚石薄片的方法
公开(公告)号：US5622586A
公开(公告)日：1997-04-22
申请号：US366573
申请日：1994-12-30
申请人： Rimantas Vaitkus , Takashi Inushima , Masaya Kadono
发明人： Rimantas Vaitkus , Takashi Inushima , Masaya Kadono
IPC分类号： G01F1/00 , G01D21/00 , G01F1/684 , G01K7/22 , H01L21/48 , H01L23/373 , B32B31/00
CPC分类号： H01L21/6835 , G01F1/6845 , H01L21/4871 , H01L23/3732 , H01L24/49 , H01L24/97 , H01L2221/68345 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4911 , H01L2224/97 , H01L24/45 , H01L24/48 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/15153 , H01L2924/1517 , H01L2924/19043 , H01L2924/19107 , H01L2924/3025 , Y10S148/135 , Y10S156/922 , Y10T156/11
摘要： Method of fabricating a device made of a thin diamond film having a thickness of less than 10 .mu.m which is difficult to handle. The method is initiated by forming a thin diamond film on a silicon substrate to a thickness of about 5 .mu.m by chemical vapor deposition. Then, paraffin is applied. The substrate is removed with hydrofluoric acid. Thus, the diamond film is retained on the paraffin that is made to act as a base. A required circuit is formed on the surface of the diamond film. Finally, the paraffin is removed. In this way, a device using the diamond film is completed. This structure can be used as a device for measuring thermal effect, using a thin diamond film. For example, the structure can be used for fabrication of a flowsensor.
摘要翻译：制造由难以处理的厚度小于10μm的薄金刚石膜制成的器件的方法。该方法通过在硅衬底上通过化学气相沉积在约5μm的厚度上形成薄金刚石薄膜来引发。然后施用石蜡。用氢氟酸除去底物。因此，金刚石膜保留在作为基底的石蜡上。在金刚石膜的表面上形成所需的电路。最后，除去石蜡。以这种方式，完成使用金刚石薄膜的装置。该结构可用作测量热效应的装置，使用薄金刚石薄膜。例如，该结构可用于制造流量传感器。

7. 发明授权

US06550325B1 Electric device and method of driving the same 失效
标题翻译：电气装置及其驱动方法
公开(公告)号：US06550325B1
公开(公告)日：2003-04-22
申请号：US08141632
申请日：1993-10-27
申请人： Takashi Inushima , Vaitkus Rimantas , Masaaki Hiroki , Eiji Sato , Satoshi Teramoto
发明人： Takashi Inushima , Vaitkus Rimantas , Masaaki Hiroki , Eiji Sato , Satoshi Teramoto
IPC分类号： G01F168
CPC分类号： G01F15/006 , G01F1/688
摘要： A thermistor layer made of platinum is formed on a thin diamond film. An amount of heat carried away from the diamond film by a fluid is detected as a change in the temperature of the thermistor layer. The rear side of the diamond film is kept in contact with the fluid to prevent the material of the thermistor from being corroded by the fluid. In another aspect of the invention, a heating element and a thermistor are formed on one surface of a thin diamond film. The other surface is kept in contact with a fluid. The diamond film is heated by the heating element in a quite short time of about 0.2 second. The resulting response characteristics of the diamond film are detected by the thermistor. The flow rate is calculated from the response characteristics.
摘要翻译：在金刚石薄膜上形成由铂制成的热敏电阻层。作为热敏电阻层的温度的变化，检测由流体从金刚石膜带走的热量。金刚石膜的后侧与流体保持接触，以防止热敏电阻的材料被流体腐蚀。在本发明的另一方面，在薄金刚石膜的一个表面上形成加热元件和热敏电阻。另一个表面与流体保持接触。金刚石膜在相当短的时间内由加热元件加热约0.2秒。通过热敏电阻检测所得到的金刚石膜的响应特性。流量根据响应特性计算。

8. 发明授权

US06520189B1 CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US06520189B1
公开(公告)日：2003-02-18
申请号：US09398059
申请日：1999-09-17
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： B08B312
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

9. 发明授权

US4730903A Ferroelectric crystal display panel and manufacturing method thereof 失效
标题翻译：铁电晶体显示面板及其制造方法
公开(公告)号：US4730903A
公开(公告)日：1988-03-15
申请号：US821840
申请日：1986-01-23
申请人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama
发明人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama
IPC分类号： G02F1/1365 , G02F1/13
CPC分类号： G02F1/1365 , Y10S359/90
摘要： A ferroelectric liquid crystal display having a matrix of ferroelectric liquid crystal elements and nonlinear elements having a diode characteristic in which the liquid crystal elements are connected in series with the nonlinear elements. The first substrate member comprises (a) a transparent first substrate having an insulating surface, (b) a plurality of m.times.n (m>1, n>1) of rectangular transparent conductive layers C.sub.11 to C.sub.1n, C.sub.21 to C.sub.2n, . . . C.sub.m1 to C.sub.mn arranged on the substrate in a matrix form on the first substrate, (c) a layer member A.sub.ij formed on the conductive layer C.sub.ij (where i=1, 2 . . . m and j=1, 2 . . . n) and (d) a stripe-like conductive layer F.sub.i extending in the row direction and making contact with layer member A.sub.i1 to A.sub.in on the side opposite from the conductive layer C.sub.i1 to C.sub.in, wherein the opposing side surfaces a and a' of the layer member A.sub.ij defining is length are substantially aligned with the opposing side surfaces b and b' of the conductive layer C.sub.ij defining its width, respectively, and wherein the opposing side surface b and b' of the layer member A.sub.ij defining its width are substantially aligned with the opposing side surfaces b and b' of the conductive layer F.sub.i defining its width, respectively. The layer member A.sub.ij may be a laminate layer of a first nontransparent conductive layer, non-single-crystal semiconductor layer member or thin insulating layer which permits passage therethrough of tunnel current and a second nontransparent conductive layer.
摘要翻译：具有铁电液晶元件的矩阵的铁电液晶显示器和具有二极管特性的非线性元件，其中液晶元件与非线性元件串联连接。第一衬底构件包括（a）具有绝缘表面的透明第一衬底，（b）矩形透明导电层C11至C1n，C21至C2n的多个m1n（m1，n≥1）。。。 Cm1至Cmn以矩阵形式布置在第一衬底上的衬底上，（c）形成在导电层Cij上的层构件Aij（其中i = 1,2 ...和j = 1,2 ...））和（d）沿行方向延伸的条状导电层Fi，并且在与导电层Ci1至Cin相对的一侧与层构件Ai1至Ain接触，其中层的相对侧表面a和a' 构件Aij的长度分别基本上与导电层Cij的相对的侧表面b和b'对准，以限定其宽度，并且其中限定其宽度的层构件Aij的相对的侧表面b和b'基本上与导电层Fi的相对的侧表面b和b'分别限定其宽度。层构件Aij可以是允许隧道电流通过的第一非透明导电层，非单晶半导体层构件或薄绝缘层的层压层和第二非透明导电层。

10. 发明授权

US07507615B2 Method of manufacturing gate insulated field effect transistors 失效
标题翻译：栅极绝缘场效应晶体管的制造方法
公开(公告)号：US07507615B2
公开(公告)日：2009-03-24
申请号：US10401891
申请日：2003-03-31
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。

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