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1. 发明授权

US07507615B2 Method of manufacturing gate insulated field effect transistors 失效
标题翻译：栅极绝缘场效应晶体管的制造方法
公开(公告)号：US07507615B2
公开(公告)日：2009-03-24
申请号：US10401891
申请日：2003-03-31
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。

2. 发明授权

US06566175B2 Method of manufacturing gate insulated field effect transistors 失效
公开(公告)号：US06566175B2
公开(公告)日：2003-05-20
申请号：US09877059
申请日：2001-06-11
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

3. 发明授权

US06261877B1 Method of manufacturing gate insulated field effect transistors 失效
标题翻译：栅极绝缘场效应晶体管的制造方法
公开(公告)号：US06261877B1
公开(公告)日：2001-07-17
申请号：US08677331
申请日：1996-07-02
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。

4. 发明授权

US06177302B1 Method of manufacturing a thin film transistor using multiple sputtering chambers 失效
标题翻译：使用多个溅射室制造薄膜晶体管的方法
公开(公告)号：US06177302B1
公开(公告)日：2001-01-23
申请号：US08310364
申请日：1994-09-22
申请人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
发明人： Shunpei Yamazaki , Hongyong Zhang , Takashi Inushima , Takeshi Fukada
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译：描述制造薄膜场效应晶体管的方法。通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。

5. 发明授权

US5320984A Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere 失效
标题翻译：通过溅射沉积在氢气氛中形成半导体膜的方法
公开(公告)号：US5320984A
公开(公告)日：1994-06-14
申请号：US810422
申请日：1991-12-20
申请人： Hongyong Zhang , Shunpei Yamazaki , Takashi Inushima
发明人： Hongyong Zhang , Shunpei Yamazaki , Takashi Inushima
IPC分类号： C23C14/35 , H01L21/203 , H01L21/00 , H01L21/02 , H01L21/469
CPC分类号： C23C14/35 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/02521 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02631
摘要： There is disclosed a method for forming a semiconductor film having a high electrical conductivity on a substrate at a low temperature below 200.degree. C. with high productivity by sputtering. For example, the sputtering process is carried out within an inert atmosphere consisting of an inert gas such as argon and hydrogen. The substrate is electrically insulated (floating) from the surroundings. The distance between the substrate and a target is set to a large value. Preferably, the ratio of the partial pressure of the hydrogen to the total pressure is 30 % or more. The target consists of a semiconductor doped with an impurity that imparts one conductivity type to the semiconductor, in the case where a semiconductor film containing an impurity that imparts the conductivity type to the semiconductor film is formed on the substrate. This impurity is for example a group III or V element.
摘要翻译：公开了通过溅射以高生产率在低于200℃的低温下在基板上形成具有高导电性的半导体膜的方法。例如，溅射工艺是在惰性气体如氩气和氢气组成的惰性气氛中进行的。基板与周围环境电绝缘（浮动）。基板与目标之间的距离被设定为大的值。优选地，氢的分压与总压的比例为30％以上。在基板上形成含有向半导体膜施加导电类型的杂质的半导体膜的半导体掺杂有杂质的半导体的半导体的靶的靶。该杂质例如为III族或V族元素。

6. 发明授权

US4730903A Ferroelectric crystal display panel and manufacturing method thereof 失效
标题翻译：铁电晶体显示面板及其制造方法
公开(公告)号：US4730903A
公开(公告)日：1988-03-15
申请号：US821840
申请日：1986-01-23
申请人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama
发明人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama
IPC分类号： G02F1/1365 , G02F1/13
CPC分类号： G02F1/1365 , Y10S359/90
摘要： A ferroelectric liquid crystal display having a matrix of ferroelectric liquid crystal elements and nonlinear elements having a diode characteristic in which the liquid crystal elements are connected in series with the nonlinear elements. The first substrate member comprises (a) a transparent first substrate having an insulating surface, (b) a plurality of m.times.n (m>1, n>1) of rectangular transparent conductive layers C.sub.11 to C.sub.1n, C.sub.21 to C.sub.2n, . . . C.sub.m1 to C.sub.mn arranged on the substrate in a matrix form on the first substrate, (c) a layer member A.sub.ij formed on the conductive layer C.sub.ij (where i=1, 2 . . . m and j=1, 2 . . . n) and (d) a stripe-like conductive layer F.sub.i extending in the row direction and making contact with layer member A.sub.i1 to A.sub.in on the side opposite from the conductive layer C.sub.i1 to C.sub.in, wherein the opposing side surfaces a and a' of the layer member A.sub.ij defining is length are substantially aligned with the opposing side surfaces b and b' of the conductive layer C.sub.ij defining its width, respectively, and wherein the opposing side surface b and b' of the layer member A.sub.ij defining its width are substantially aligned with the opposing side surfaces b and b' of the conductive layer F.sub.i defining its width, respectively. The layer member A.sub.ij may be a laminate layer of a first nontransparent conductive layer, non-single-crystal semiconductor layer member or thin insulating layer which permits passage therethrough of tunnel current and a second nontransparent conductive layer.
摘要翻译：具有铁电液晶元件的矩阵的铁电液晶显示器和具有二极管特性的非线性元件，其中液晶元件与非线性元件串联连接。第一衬底构件包括（a）具有绝缘表面的透明第一衬底，（b）矩形透明导电层C11至C1n，C21至C2n的多个m1n（m1，n≥1）。。。 Cm1至Cmn以矩阵形式布置在第一衬底上的衬底上，（c）形成在导电层Cij上的层构件Aij（其中i = 1,2 ...和j = 1,2 ...））和（d）沿行方向延伸的条状导电层Fi，并且在与导电层Ci1至Cin相对的一侧与层构件Ai1至Ain接触，其中层的相对侧表面a和a' 构件Aij的长度分别基本上与导电层Cij的相对的侧表面b和b'对准，以限定其宽度，并且其中限定其宽度的层构件Aij的相对的侧表面b和b'基本上与导电层Fi的相对的侧表面b和b'分别限定其宽度。层构件Aij可以是允许隧道电流通过的第一非透明导电层，非单晶半导体层构件或薄绝缘层的层压层和第二非透明导电层。

7. 发明授权

US4987004A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US4987004A
公开(公告)日：1991-01-22
申请号：US522129
申请日：1990-05-11
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

8. 发明授权

US4855805A Nonlinear semiconductor element, liquid crystal display panel using the same and their manufacturing methods 失效
标题翻译：非线性半导体元件，液晶显示面板及其制造方法
公开(公告)号：US4855805A
公开(公告)日：1989-08-08
申请号：US203641
申请日：1988-06-03
申请人： Shunpei Yamazaki , Akira Mase , Toshimitsu Konuma , Minoru Miyazaki , Mitsunori Sakama , Takashi Inushima
发明人： Shunpei Yamazaki , Akira Mase , Toshimitsu Konuma , Minoru Miyazaki , Mitsunori Sakama , Takashi Inushima
IPC分类号： G02F1/1365 , H01L21/77 , H01L21/84 , H01L29/167 , H01L29/868
CPC分类号： G02F1/1365 , H01L27/1214 , H01L29/167 , H01L29/868
摘要： The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.
摘要翻译：本发明提供一种具有优异原始对称性的V-I特性的非线性半导体元件和采用这种非线性半导体元件的液晶显示面板。非线性半导体具有n-i-n，n-i-p-i-n或p-i-n-i-p型结构。 i型半导体层有意地掺杂有硼，其用于使i型半导体层更内在。

9. 发明授权

US4844588A Liquid crystal display panel and manufacturing method thereof 失效
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US4844588A
公开(公告)日：1989-07-04
申请号：US148097
申请日：1988-01-25
申请人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Minoru Miyazaki , Mitsunori Sakama
发明人： Shunpei Yamazaki , Takashi Inushima , Akira Mase , Toshimitsu Konuma , Minoru Miyazaki , Mitsunori Sakama
IPC分类号： G02F1/136 , G02F1/1365 , H01L27/146
CPC分类号： G02F1/1365
摘要： A method for manufacturing a liquid crystal device including forming a semiconductor layer on a first substrate and an underlying conductive layer; separating the semiconductor layer and the underlying conductive layer into the elements of an array by removing the parts of the semiconductor and the conductive layer between the elements; insulating the side surfaces of the elements of said array; forming an overlying conductive layer on the first substrate over the array; removing the conductive layer other than at least one strip extending over a part of each surface of the elements arranged in a line, together with the underlying semiconductor layer whereby parts of the separated underlying conductors are exposed in the form of a plurality of first electrodes; and mating the first substrate to a second substrate having a plurality of second electrodes corresponding to the first electrodes, with a liquid crystal layer in between.
摘要翻译：一种制造液晶器件的方法，包括在第一衬底和下导电层上形成半导体层; 通过去除半导体的部件和元件之间的导电层将半导体层和下面的导电层分离成阵列的元件; 绝缘所述阵列的元件的侧表面; 在所述阵列上的所述第一衬底上形成覆盖的导电层; 去除除了下列半导体层之外的布置在一行中的元件的每个表面的一部分上延伸的至少一个条带之外的导电层，由此分离的下面的导体的一部分以多个第一电极的形式暴露; 以及将所述第一基板与具有与所述第一电极对应的多个第二电极的第二基板配合，其间具有液晶层。

10. 发明授权

US4780794A Electronic device 失效
标题翻译：电子设备
公开(公告)号：US4780794A
公开(公告)日：1988-10-25
申请号：US82908
申请日：1987-08-10
申请人： Akira Mase , Toshimitsu Konuma , Mitsunori Sakama , Takashi Inushima , Shunpei Yamazaki
发明人： Akira Mase , Toshimitsu Konuma , Mitsunori Sakama , Takashi Inushima , Shunpei Yamazaki
IPC分类号： B32B33/00 , B05D3/06 , B05D5/12 , H01L21/312 , H01L27/12 , H05K3/00 , H05K1/18
CPC分类号： H01L27/12
摘要： A electronic multilayer device is formed within a photocured insulative layer using a transparent substrate thereby forming a surface contamination free device without shorts between the layers of the device.
摘要翻译：使用透明基板在光固化绝缘层内形成电子多层器件，从而形成在器件层之间没有短路的无表面污染的器件。

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