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1. 发明授权

US08946379B2 Bladder cancer specific ligand peptides 有权
标题翻译：膀胱癌特异性配体肽
公开(公告)号：US08946379B2
公开(公告)日：2015-02-03
申请号：US13497041
申请日：2010-09-23
申请人： Chong-xian Pan , Hongyong Zhang , Kit S. Lam , Olulanu H. Aina
发明人： Chong-xian Pan , Hongyong Zhang , Kit S. Lam , Olulanu H. Aina
IPC分类号： C07K5/00 , G01N33/574 , A61K47/48 , A61K49/00 , B82Y5/00 , C07K7/06 , A61K38/00
CPC分类号： A61K47/48246 , A61K9/0019 , A61K9/51 , A61K38/00 , A61K47/51 , A61K47/64 , A61K47/66 , A61K49/0002 , A61K49/0032 , A61K49/0056 , A61K51/088 , B82Y5/00 , C07K7/06 , G01N33/57407
摘要： The present invention is directed to bladder cancer specific ligand peptides, comprising the amino acid sequence X1DGRX5GF (SEQ ID NO:1), and methods of their use, e.g., for imaging detection for diagnosis of bladder, tumor localization to guide transurethral resection of bladder cancer, imaging detection of bladder cancer for follow-up after the initial treatment that can replace or complement costly cystoscopy, imaging detection of metastatic bladder cancer, and targeted therapy for superficial and metastatic bladder cancer.
摘要翻译：本发明涉及包含氨基酸序列X1DGRX5GF（SEQ ID NO：1）的膀胱癌特异性配体肽及其使用方法，例如用于膀胱诊断的成像检测，用于引导膀胱经尿道切除的肿瘤定位癌症，成像检测膀胱癌的初步治疗后的后续可以替代或补充昂贵的膀胱镜检查，成像检测转移性膀胱癌和靶向治疗浅表和转移性膀胱癌。

2. 发明授权

US08665411B2 Liquid crystal display device having particular conductive layer 失效
标题翻译：具有特定导电层的液晶显示装置
公开(公告)号：US08665411B2
公开(公告)日：2014-03-04
申请号：US13484800
申请日：2012-05-31
申请人： Hongyong Zhang
发明人： Hongyong Zhang
IPC分类号： G02F1/1339 , G02F1/1345
CPC分类号： G02F1/136286 , G02F1/1339 , G02F1/13454
摘要： Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.
摘要翻译：提供了用于统一密封材料的步骤的技术，使得液晶显示装置的成品率和可靠性变高。扫描线的起始膜被图案化，使得在区域R1和R2中形成不电连接的第一层的棱形虚拟布线301，并且从像素部分延伸的布线302形成在区域R3中，并且布线303具有连接端部303a形成在区域R4中。在形成层间绝缘膜之后，将信号线的起始膜图案化，以形成用于第二层的虚拟布线304，以将布线301至303之间的间隙，以及布线305和布线303 从像素部分延伸的相互连接。这允许密封材料形成区域的横截面结构的统一。

3. 发明授权

US08154136B2 Method of fabricating semiconductor device 有权
公开(公告)号：US08154136B2
公开(公告)日：2012-04-10
申请号：US12883526
申请日：2010-09-16
申请人： Hongyong Zhang
发明人： Hongyong Zhang
IPC分类号： H01L23/48
摘要： Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved.

4. 发明申请

US20120068266A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068266A1
公开(公告)日：2012-03-22
申请号：US13282515
申请日：2011-10-27
申请人： Hongyong ZHANG , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong ZHANG , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L27/12
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。在具有薄膜晶体管的动态电路中同时获得具有低漏电流和高迁移率的晶体管，在半导体层上选择性地形成覆盖膜，半导体层将成为晶体管的有源层，并且之后将其热结晶。

5. 发明授权

US07998844B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07998844B2
公开(公告)日：2011-08-16
申请号：US12219026
申请日：2008-07-15
申请人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
发明人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
IPC分类号： H01L21/20 , H01L21/36 , H01L21/22 , H01L21/38 , H01L21/31 , H01L21/469 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78678 , Y10S148/016
摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
摘要翻译：一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶电影。

6. 发明授权

US07985635B2 Laser process 失效
标题翻译：激光工艺
公开(公告)号：US07985635B2
公开(公告)日：2011-07-26
申请号：US11321641
申请日：2005-12-30
申请人： Shunpei Yamazaki , Hongyong Zhang , Hiroaki Ishihara
发明人： Shunpei Yamazaki , Hongyong Zhang , Hiroaki Ishihara
IPC分类号： H01L21/00
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2022 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L21/84 , H01L27/1285
摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10 N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.
摘要翻译：一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加密度E（mJ / cm2），条件是其满足关系：log10 N＆nlE; -0.02（E-350），其中N是脉冲激光束的镜头数。

7. 发明申请

US20110100688A1 Electro-Optical Device and Method of Manufacturing the Same 审中-公开
标题翻译：电光器件及其制造方法
公开(公告)号：US20110100688A1
公开(公告)日：2011-05-05
申请号：US12986281
申请日：2011-01-07
申请人： Hongyong Zhang , Yoshiharu Hirakata , Kenji Otsuka , Shunpei Yamazaki , Hideaki Kuwabara
发明人： Hongyong Zhang , Yoshiharu Hirakata , Kenji Otsuka , Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H05K1/09 , H05K1/02 , G03F7/20
CPC分类号： G02F1/134363 , G02F1/136286 , G02F2001/136295
摘要： In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.
摘要翻译：在液晶显示装置中，首先同时形成栅极线和公共线，并且在形成层间膜之后，同时形成像素电极，公共电极和源极线。由此，可以使电极图案简单，并且简化制造步骤。此外，布置在最靠近液晶层的层中的布线和电极被制成像素电极，公共电极和源极线，并且其形状变得简单。

8. 发明授权

US07838968B2 Semiconductor device and method of fabricating same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07838968B2
公开(公告)日：2010-11-23
申请号：US11293111
申请日：2005-12-05
申请人： Hongyong Zhang , Satoshi Teramoto
发明人： Hongyong Zhang , Satoshi Teramoto
IPC分类号： H01L23/58 , H01L27/01 , H01L29/04
CPC分类号： H01L21/31111 , G02F1/136227 , H01L21/02532 , H01L21/02675 , H01L21/2026 , H01L21/76801 , H01L21/76802 , H01L27/12 , H01L27/1248
摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.
摘要翻译：公开了具有提高的可靠性的TFT。形成TFT的层间电介质膜由氮化硅膜构成。其它层间绝缘膜也由氮化硅制成。形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。这可以抑制层间绝缘膜的剥离和形成接触孔的困难。此外，可以抑制从活性层释放氢。以这种方式，可以获得高度可靠的TFT。

9. 发明授权

US07821011B2 Insulated gate field effect semiconductor devices and method of manufacturing the same 失效
标题翻译：绝缘栅场效应半导体器件及其制造方法
公开(公告)号：US07821011B2
公开(公告)日：2010-10-26
申请号：US12277547
申请日：2008-11-25
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , G02F1/13454 , G02F2001/136245 , H01L21/76897 , H01L27/1214 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78651 , H01L29/78666 , H01L29/78675
摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
摘要翻译：制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。然后对栅电极进行阳极氧化，形成包围电极的氧化膜。以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

10. 发明申请

US20100081247A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100081247A1
公开(公告)日：2010-04-01
申请号：US12579642
申请日：2009-10-15
申请人： Hongyong ZHANG , Hideki UOCHI , Toru TAKAYAMA , Takeshi FUKUNAGA , Yasuhiko TAKEMURA
发明人： Hongyong ZHANG , Hideki UOCHI , Toru TAKAYAMA , Takeshi FUKUNAGA , Yasuhiko TAKEMURA
IPC分类号： H01L21/268
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过选择性地形成覆盖膜来形成具有薄膜晶体管的动态电路，同时获得漏电流低的晶体管和迁移率高的晶体管，即将成为有源层的半导体层晶体管，然后通过其热结晶。

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