专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130082177A1 CIRCUIT PATTERN INSPECTION APPARATUS AND CIRCUIT PATTERN INSPECTION METHOD 审中-公开
标题翻译：电路图案检查装置和电路图案检查方法
公开(公告)号：US20130082177A1
公开(公告)日：2013-04-04
申请号：US13702923
申请日：2011-05-13
申请人： Takashi Hiroi , Mari Nozoe , Takuma Yamamoto , Masaaki Nojiri , Mitsuru Okamura
发明人： Takashi Hiroi , Mari Nozoe , Takuma Yamamoto , Masaaki Nojiri , Mitsuru Okamura
IPC分类号： H01J37/28 , H01J37/20
CPC分类号： H01J37/28 , G01N23/2251 , G06T7/001 , G06T2207/10061 , G06T2207/30148 , H01J37/20 , H01J2237/221 , H01J2237/2817
摘要： High-speed inspection is performed with appropriate sensitivity according to the pattern density and pattern characteristic of a device.The pixel dimension used in image acquisition is changed in accordance with the pattern density of a device. An image is acquired at high speed by changing the beam scan speed and the stage drive speed in accordance with the pixel dimension and eliminating an error by controlling the amount of beam delay. The acquired image is so resampled that the image dimensions of the acquired image and a reference image are equally sized, and the acquired image and the reference image are then aligned with each other. The aligned images are resampled in accordance with a preset pixel dimension to extract a difference between the images with the sensitivity according to the pixel dimension.
摘要翻译：根据设备的图案密度和图案特性，以适当的灵敏度进行高速检查。图像采集中使用的像素尺寸根据设备的图案密度而改变。通过根据像素尺寸改变光束扫描速度和平台驱动速度，通过控制光束延迟量来消除误差，高速获取图像。所获取的图像被如此重新采样，使得所获取的图像和参考图像的图像尺寸的大小相等，并且获取的图像和参考图像然后彼此对准。对准的图像根据预设的像素尺寸重新采样，以根据像素尺寸提取具有灵敏度的图像之间的差异。

2. 发明申请

US20080302964A1 METHOD AND APPARATUS FOR INSPECTING INTEGRATED CIRCUIT PATTERN 有权
标题翻译：用于检查集成电路图案的方法和装置
公开(公告)号：US20080302964A1
公开(公告)日：2008-12-11
申请号：US12190388
申请日：2008-08-12
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01N23/00 , G01R31/305
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：电路图案检查方法及其装置，其中待检查的样品的待检查部分的整体部分处于预定的改变状态，被检查的部分用成像高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

3. 发明授权

US06828554B2 Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 失效
公开(公告)号：US06828554B2
公开(公告)日：2004-12-07
申请号：US10785949
申请日：2004-02-26
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
IPC分类号： G01N2300
CPC分类号： H01J37/28 , H01J2237/2817
摘要： A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen in synchronism with the irradiation of the electron beam, processing the acquired image to detect a defect on the specimen, and outputting information regarding the detected defect. The image acquisition condition is determined based on plural images which are acquired by changing at least one of acceleration condition of the secondary electron and an electrical field in the vicinity of the specimen.

4. 发明授权

US06759655B2 Inspection method, apparatus and system for circuit pattern 失效
标题翻译：检查方法，电路图案的装置和系统
公开(公告)号：US06759655B2
公开(公告)日：2004-07-06
申请号：US09832220
申请日：2001-04-11
申请人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa
发明人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa
IPC分类号： G01N23225
CPC分类号： G03F7/70616 , G03F1/84 , G03F7/7065 , G06T7/001 , G06T2207/30141 , H01J37/226 , H01J2237/082 , H01J2237/2817 , H01L22/12
摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.
摘要翻译：设置用于电路图案的检查方法，装置和系统，其中当通过使用通过照射白光形成的图像，激光束或带电粒子束来检查精细电路图案的情况下需要各种条件时，其运行效率可以提高。显示检查对象基板的检查对象区域，并且指定区域的指定地图画面和光学显微镜或电子束显微镜的图像并行显示，从而能够将缺陷分布和缺陷图像同时看到。检查条件的项目名称和显示，输入或指示检查条件内容的画面被整合，这些内容与图像平面重叠，层叠显示，并且所有项目名称均以选项卡格式在内容的图片平面的上部。当点击所需的项目名称时，切换画面并显示与点击的项目名称对应的内容。

5. 发明授权

US06493082B2 Inspection method, apparatus and system for circuit pattern 失效
公开(公告)号：US06493082B2
公开(公告)日：2002-12-10
申请号：US10116134
申请日：2002-04-05
申请人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa , Maki Ito
发明人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa , Maki Ito
IPC分类号： G01B1100
CPC分类号： G03F7/70616 , G03F1/84 , G03F7/7065 , G06T7/001 , G06T2207/30141 , H01J37/226 , H01J2237/082 , H01J2237/2817 , H01L22/12
摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

6. 发明授权

US06373054B1 Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 有权
公开(公告)号：US06373054B1
公开(公告)日：2002-04-16
申请号：US09752468
申请日：2001-01-03
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
IPC分类号： H01J37304
摘要： An inspection method and apparatus which controls an acceleration voltage of an electron beam, irradiates the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, detects at least one of a secondary electron and a reflected electron emanated from the object by the irradiating, obtains an image of the object from the detected electron by using positional information of the stage, conducts inspection or measurement of the object using the image obtained, and outputs a result of the inspection or the measurement through a network system which is connected to a computer.

7. 发明授权

US06236057B1 Method of inspecting pattern and apparatus thereof with a differential brightness image detection 有权
标题翻译：用差分亮度图像检测来检查图案及其装置的方法
公开(公告)号：US06236057B1
公开(公告)日：2001-05-22
申请号：US09610954
申请日：2000-07-06
申请人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
发明人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
IPC分类号： G01N2188
CPC分类号： G01N21/95607
摘要： A method and apparatus for inspecting a pattern, a first image of a first area on a sample is acquired by imaging the first area formed as a first pattern, and the first image is memorized. A second image of a second area on the sample is acquired by imaging the second area formed as a second pattern which is to be the same as the first pattern. A defect of the first pattern is detected by acquiring a differential image between the first image and the second image. The detection of the defect includes processing the differential image by using information of brightness corresponding to both of the first image and the second image.
摘要翻译：通过对形成为第一图案的第一区域进行成像，并记录第一图像来获取用于检查图案的样品的第一区域的第一图像的方法和装置。通过对形成为与第一图案相同的第二图案的第二区域成像来获取样品上的第二区域的第二图像。通过获取第一图像和第二图像之间的差分图像来检测第一图案的缺陷。缺陷的检测包括通过使用与第一图像和第二图像两者相对应的亮度的信息来处理差分图像。

8. 发明授权

US06172365B2 Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 有权
标题翻译：电子束检查方法及装置及半导体制造方法及其制造线
公开(公告)号：US06172365B2
公开(公告)日：2001-01-09
申请号：US09437313
申请日：1999-11-10
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
IPC分类号： H01J3728
CPC分类号： H01J37/28 , H01J2237/2817
摘要： An electron beam inspection method including the steps of irradiating an electron beam to an object to be inspected, detecting at least one of a secondary electron and a reflected electron emanated from the object by the irradiation of the electron beam, and obtaining an image of the object from the detected electron. The method further includes the steps of controlling an electric field in a neighborhood of the object for filtering the at least one of the secondary and reflected electron emanated from the object so as to control the contrast of the image, detecting at least one of the secondary and reflected electron emanated from the object which passes through the electric field in the neighborhood of the object by the irradiation of the electron beam, and conducting inspection or measurement of the object on the basis of a detected signal of the detection in the controlled electric field.
摘要翻译：一种电子束检查方法，包括以下步骤：将电子束照射到待检查对象，通过电子束的照射检测从物体发射的二次电子和反射电子中的至少一种，并获得物体来自被检测的电子。该方法还包括以下步骤：控制物体附近的电场，以对从物体发出的次级和反射电子中的至少一种进行过滤，以便控制图像的对比度，检测二次以及通过电子束的照射而在物体附近通过电场发射的反射电子，并且根据检测到的受控电场的检测信号进行物体的检查或测量。

9. 发明授权

US6087673A Method of inspecting pattern and apparatus thereof 失效
标题翻译：检查图案及其装置的方法
公开(公告)号：US6087673A
公开(公告)日：2000-07-11
申请号：US81636
申请日：1998-05-20
申请人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
发明人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N21/88 , G01N21/956 , G01N23/225 , G06T1/00 , H01L21/66
CPC分类号： G01N21/95607
摘要： In a method of inspecting a defect and an apparatus thereof, an allowable range for a gradation value of a difference image is determined for each pixel from one pixel or less of position shift quantity between two images to be compared, a variation rate in a local gradation value of an image, and a representative value of the local gradation value. Then, by comparing the gradation value of the difference image with the allowable range determined for each pixel, a pixel, on which the gradation value of the difference image is within the allowable range, is judged to be an non-defective candidate and a pixel, on which the gradation value of the difference image is beyond the allowable range, is judged to be a defective candidate. This reduces the number of false information caused by mismatches attributed to an object to be inspected and an image detecting system, such as an infinitesimal difference in pattern configuration, a difference in the gradation value, a distortion of a pattern, and a position shift, thus making it possible to detect a more minute defect.
摘要翻译：在检查缺陷的方法和装置中，针对要比较的两个图像之间的位置偏移量的一个像素或更少的像素，针对每个像素确定差分图像的灰度值的允许范围，局部变化率图像的灰度值和局部灰度值的代表值。然后，通过将差分图像的灰度值与对于每个像素确定的容许范围进行比较，将差分图像的灰度值在允许范围内的像素判断为无缺陷候选和像素，其中差分图像的灰度值超出允许范围，被判断为缺陷候选。这减少了归因于待检查对象的失配和图像检测系统引起的错误信息的数量，例如图案配置中的无穷小差异，灰度值的差异，图案的失真和位置偏移，从而可以检测到更小的缺陷。

10. 发明授权

US5986263A Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 失效
标题翻译：电子束检查方法及装置及半导体制造方法及其制造线
公开(公告)号：US5986263A
公开(公告)日：1999-11-16
申请号：US824413
申请日：1997-03-26
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
IPC分类号： G01Q20/00 , G01Q30/04 , G01Q30/02 , G01Q60/00 , H01J37/20 , H01J37/22 , H01J37/256 , H01J37/28 , H01L21/66
CPC分类号： H01J37/28 , H01J2237/2817
摘要： An electron beam inspection method and apparatus. The method includes controlling acceleration voltage of electron beam and electric field on a sample, beam current, beam diameter, image detection rate, image dimensions, precharge, discharge, or a combination of them, exposing an object to the electron beam, detecting in a sensor a physical change generated from the object, and inspecting or measuring the object on the basis of a signal representing the detected physical change. The apparatus includes an electron source (potential E2) for generating an electron beam, a deflector for scanning generated electrons, an objective lens for focusing the electron beam upon the object, a grid (potential E1) disposed between the object and the objective lens, a wafer holder (potential E0) for holding the object, a sensor for detecting generated secondary electrons, a potential controller for controlling the potential E0, E1 and E2, and a storage for storing optimum potential conditions. By changing conditions of an electron optic system such as potential E0, E1 and E2, the acceleration voltage and electric field on the object are controlled. For a material located at least in an upper layer of a plurality of materials forming the object, the secondary electron yield ratio can be made nearly unity and appropriate contrast of an obtained image can be provided with minimized influence of charge up.
摘要翻译：电子束检查方法和装置。该方法包括控制电子束的加速电压和样品上的电场，束电流，光束直径，图像检测率，图像尺寸，预充电，放电或它们的组合，将物体暴露于电子束，在传感器从物体产生的物理变化，以及根据表示检测到的物理变化的信号检查或测量物体。该装置包括用于产生电子束的电子源（电位E2），用于扫描产生的电子的偏转器，用于将电子束聚焦在物体上的物镜，设置在物体和物镜之间的格栅（电位E1）用于保持物体的晶片保持器（电位E0），用于检测产生的二次电子的传感器，用于控制电位E0，E1和E2的电位控制器，以及用于存储最佳电位条件的存储器。通过改变诸如电位E0，E1和E2的电子光学系统的状态，控制对象上的加速电压和电场。对于至少位于形成物体的多种材料的上层中的材料，二次电子屈服比可以几乎一致，并且可以以最小化的充电影响来提供所获得的图像的适当的对比度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式