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1. 发明授权

US06631056B1 Thin film magnetic head assembly and method of manufacturing the same 失效
标题翻译：薄膜磁头组件及其制造方法
公开(公告)号：US06631056B1
公开(公告)日：2003-10-07
申请号：US09584267
申请日：2000-06-01
申请人： Takashi Asatani , Fujimi Kimura , Junichi Sato
发明人： Takashi Asatani , Fujimi Kimura , Junichi Sato
IPC分类号： G11B540
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3133 , G11B5/3163 , G11B5/3166 , G11B5/3173 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： On a wafer-like substrate 1, there are formed a number of thin film magnetic head elements in matrix, each of which is formed to include a first shield film 3 formed on the wafer-like substrate 1, a first insulating film 71 formed on the first shield film, a magnetoresistive element 9 and first and second electrode films 11, 13 connected to respective ends of the magnetoresistive element formed on the first insulating film, a second shield film 5 formed to cover the magnetoresistive element and first and second electrode films 11, 13, a second insulating film 72 formed on the second shield film, and a conductive film 191 electrically connected to the first electrode film 11 and second shield film 5 and having a middle portion which is separated from a side edge of the second shield film 5 by a distance &Dgr;G2 viewed in a film stacking direction. Since the first electrode film 11 and second shield film 5 become equipotential, no voltage is applied across the first and second insulating films 71, 72 and dielectric breakdown does not occur. By cutting the middle portion of the conductive film 191, property of the magnetoresistive element can be measured. Since the middle portion of the conductive film 191 situates outside the second shield film 5, a generation of conductive material debris upon cutting can be prevented, and a cut surface of the first electrode film 11 and second shield film 5 are not short-circuited.
摘要翻译：在晶片状基板1上形成多个矩阵状的薄膜磁头元件，每个薄膜磁头元件形成为包括形成在晶片状基板1上的第一屏蔽膜3，形成在第一绝缘膜71上的第一绝缘膜71 第一屏蔽膜，磁阻元件9和连接到形成在第一绝缘膜上的磁阻元件的各端的第一和第二电极膜11,13，形成为覆盖磁阻元件的第二屏蔽膜5和第一和第二电极膜形成在第二屏蔽膜上的第二绝缘膜72和与第一电极膜11和第二屏蔽膜5电连接并具有与第二屏蔽层的侧边缘分离的中间部分的导电膜191 胶片5在胶片层叠方向上观看距离DeltaG2。由于第一电极膜11和第二屏蔽膜5变为等电位，因此在第一绝缘膜71和第二绝缘膜72之间不施加电压，并且不会发生电介质击穿。通过切割导电膜191的中间部分，可以测量磁阻元件的性质。由于导电膜191的中间部分位于第二屏蔽膜5的外部，因此可以防止在切割时产生导电材料碎屑，并且第一电极膜11和第二屏蔽膜5的切割面不会短路。

2. 发明授权

US06445551B1 Bar-shaped head aggregation, a thin film magnetic head, a magnetic head device and a magnetic disk driving device 失效
标题翻译：棒状头部聚集，薄膜磁头，磁头装置和磁盘驱动装置
公开(公告)号：US06445551B1
公开(公告)日：2002-09-03
申请号：US09610289
申请日：2000-07-05
申请人： Takashi Asatani , Fujimi Kimura , Junichi Sato
发明人： Takashi Asatani , Fujimi Kimura , Junichi Sato
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3166 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B5/455
摘要： A first insulating film is provided on a first shielding film. A magnetoresistive effective element is provided on the first insulating film. A first and a second leading conductor films are provided on the first insulating film and connected to both ends of the magnetoresistive effective element. A second insulating film covers the first and second leading conductor films and the magnetoresistive effective element, and a second shielding film is provided on the second insulating film. A terminal conductor for measurement is conductively connected to at least one of the first and the second shielding films, and exposed to a different surface of a slider from a medium opposing surface thereof.
摘要翻译：第一绝缘膜设置在第一屏蔽膜上。在第一绝缘膜上设置有磁阻有效元件。第一和第二引线导体膜设置在第一绝缘膜上并连接到磁阻有效元件的两端。第二绝缘膜覆盖第一和第二引线导体膜和磁阻效应元件，第二绝缘膜设置在第二绝缘膜上。用于测量的端子导体导电地连接到第一和第二屏蔽膜中的至少一个，并且从其与介质相对表面暴露于滑块的不同表面。

3. 发明授权

US08269097B2 Thin film thermoelectric element including stress releasing elements 有权
标题翻译：薄膜热电元件包括应力释放元件
公开(公告)号：US08269097B2
公开(公告)日：2012-09-18
申请号：US11526677
申请日：2006-09-26
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： H01L35/00
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间的应力释放部分，并且包括多个柱状部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

4. 发明申请

US20120305046A1 THERMOELECTRIC ELEMENT 有权
标题翻译：热电元件
公开(公告)号：US20120305046A1
公开(公告)日：2012-12-06
申请号：US13588896
申请日：2012-08-17
申请人： Takashi ASATANI , Fujimi Kimura
发明人： Takashi ASATANI , Fujimi Kimura
IPC分类号： H01L35/04
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间并且包括多个柱状部分的应力释放部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

5. 发明授权

US07057861B2 Electromagnetic transducer laminate with different widths for the semi-hard magnetic layer and the first ferromagnetic layer 失效
标题翻译：用于半硬磁层和第一铁磁层的不同宽度的电磁换能器叠层
公开(公告)号：US07057861B2
公开(公告)日：2006-06-06
申请号：US10624685
申请日：2003-07-23
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01F41/325
摘要： Provided is a magnetic reproducing apparatus capable of controlling a magnetic domain of a free layer, and obtaining a sufficient reproduction output even if the size of an MR device is reduced. The MR device is formed so as to have a laminate structure in which a semi-hard magnetic layer and a first ferromagnetic layer (free layer) are exchange-coupled to each other through a non-magnetic exchange coupling layer. Unlike an abutted junction structure using a hard magnetic layer, the distribution of a magnetic bias applied from the semi-hard magnetic layer to the first ferromagnetic layer becomes uniform, thereby the first ferromagnetic layer is brought into a single magnetic domain state. Moreover, the semi-hard magnetic layer has a moderate coercive force lying halfway between soft magnetism and hard magnetism, so the magnetization direction of the first ferromagnetic layer is not fixed. Therefore, the magnetization direction of the first ferromagnetic layer can be easily rotated, thereby a magnetoresistive ratio can be secured, so even if the size of the MR device is reduced, a sufficient reproduction output can be obtained.
摘要翻译：提供了一种能够控制自由层的磁畴并且即使MR器件的尺寸减小也能获得足够的再现输出的磁再现装置。 MR器件形成为具有半硬磁性层和第一铁磁性层（自由层）通过非磁性交换耦合层彼此交换耦合的叠层结构。与使用硬磁性层的邻接结结构不同，从半硬磁性层施加到第一铁磁层的磁偏压的分布变得均匀，从而使第一铁磁层成为单一磁畴状态。此外，半硬磁性层在软磁性和硬磁性之间具有中等矫顽力，因此第一铁磁层的磁化方向不固定。因此，第一铁磁层的磁化方向可以容易地旋转，从而可以确保磁阻比，因此即使MR器件的尺寸减小，也可以获得足够的再现输出。

6. 发明授权

US08692104B2 Thermoelectric element 有权
标题翻译：热电元件
公开(公告)号：US08692104B2
公开(公告)日：2014-04-08
申请号：US13588896
申请日：2012-08-17
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： H01L35/32
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间并且包括多个柱状部分的应力释放部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

7. 发明申请

US20070068566A1 Thermoelectric element 有权
标题翻译：热电元件
公开(公告)号：US20070068566A1
公开(公告)日：2007-03-29
申请号：US11526677
申请日：2006-09-26
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： H01L35/02
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间并且包括多个柱状部分的应力释放部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

8. 发明授权

US07358193B2 Apparatus for forming nanoholes and method for forming nanoholes 失效
标题翻译：用于形成纳米孔的装置和形成纳米孔的方法
公开(公告)号：US07358193B2
公开(公告)日：2008-04-15
申请号：US11002266
申请日：2004-12-03
申请人： Junichi Sato , Hajime Amano , Fujimi Kimura
发明人： Junichi Sato , Hajime Amano , Fujimi Kimura
IPC分类号： H01L21/302
CPC分类号： B82Y20/00 , H01J37/32082 , H01J37/3266 , H01J2237/334
摘要： A vacuum chamber includes a plasma generating space in its interior. A magnetic field generating device applies a fluctuating magnetic field to the plasma generating space to cause plasma therein to fluctuate. A substrate is placed in the plasma generating space so that when a potential difference is evoked between a first conductor and a second conductor as a result of the fluctuation of the plasma, the potential difference causes nanoholes to be formed in the substrate.
摘要翻译：真空室在其内部包括等离子体产生空间。磁场产生装置向等离子体产生空间施加波动的磁场，使其中的等离子体发生波动。将衬底放置在等离子体产生空间中，使得当由于等离子体的波动而在第一导体和第二导体之间引起电位差时，电位差导致在衬底中形成纳孔。

9. 发明申请

US20060060465A1 Apparatus for forming nanoholes and method for forming nanoholes 失效
标题翻译：用于形成纳米孔的装置和形成纳米孔的方法
公开(公告)号：US20060060465A1
公开(公告)日：2006-03-23
申请号：US11002266
申请日：2004-12-03
申请人： Junichi Sato , Hajime Amano , Fujimi Kimura
发明人： Junichi Sato , Hajime Amano , Fujimi Kimura
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： B82Y20/00 , H01J37/32082 , H01J37/3266 , H01J2237/334
摘要： A vacuum chamber 1 has a plasma generating space 11 in its interior. A magnetic field generating means 4 applies a fluctuating magnetic field to the plasma generating space 11 to cause plasma there to fluctuate. A substrate 6 is placed in the plasma generating space 11 so that when a potential difference is evoked between a first conductor 61 and a second conductor 62 as a result of the fluctuation of plasma, the potential difference can cause nanoholes to be formed in the substrate 6.
摘要翻译：真空室1的内部具有等离子体产生空间11。磁场产生装置4向等离子体产生空间11施加波动的磁场，使等离子体发生波动。将基板6放置在等离子体产生空间11中，使得当由于等离子体的波动而在第一导体61和第二导体62之间引起电位差时，电位差可能导致在基板中形成纳孔 6。

10. 发明授权

US5700381A Method for manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US5700381A
公开(公告)日：1997-12-23
申请号：US526498
申请日：1995-09-07
申请人： Fujimi Kimura , Toyoaki Tanaka , Akihiko Dobashi , Takashi Abe
发明人： Fujimi Kimura , Toyoaki Tanaka , Akihiko Dobashi , Takashi Abe
IPC分类号： C04B41/45 , C04B41/53 , C04B41/81 , C04B41/91 , G11B5/31 , B44C1/22
CPC分类号： C04B41/009 , C04B41/4592 , C04B41/5353 , C04B41/81 , C04B41/91 , G11B5/3163 , C04B2111/00422
摘要： After applying a metal film on a surface of a substrate, the metal film is patterned in such a manner that the surface of the substrate is exposed in a pattern that corresponds to the pattern of the required indented portion. Then, the substrate is immersed in an etchant which etches the substrate selectively to form the indented portion in the surface of the substrate using the metal film as a mask. The method makes it possible to define the depth and the pattern of an indented portion where a magnetic transducer is provided with a high degree of accuracy, to prevent a reduction in pattern accuracy due to re-adhering and to advance industrial productivity.
摘要翻译：在基板的表面上施加金属膜之后，以使得基板的表面以对应于所需凹入部分的图案的图案曝光的方式对金属膜进行图案化。然后，将衬底浸入蚀刻剂中，该蚀刻剂选择性地蚀刻衬底，以使用金属膜作为掩模在衬底的表面中形成凹陷部分。该方法能够以高精度定义设置有磁换能器的凹入部分的深度和图案，以防止由于再附着而导致的图案精度降低，并提高工业生产率。

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