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1. 发明申请

US20120305046A1 THERMOELECTRIC ELEMENT 有权
标题翻译：热电元件
公开(公告)号：US20120305046A1
公开(公告)日：2012-12-06
申请号：US13588896
申请日：2012-08-17
申请人： Takashi ASATANI , Fujimi Kimura
发明人： Takashi ASATANI , Fujimi Kimura
IPC分类号： H01L35/04
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间并且包括多个柱状部分的应力释放部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

2. 发明授权

US06631056B1 Thin film magnetic head assembly and method of manufacturing the same 失效
标题翻译：薄膜磁头组件及其制造方法
公开(公告)号：US06631056B1
公开(公告)日：2003-10-07
申请号：US09584267
申请日：2000-06-01
申请人： Takashi Asatani , Fujimi Kimura , Junichi Sato
发明人： Takashi Asatani , Fujimi Kimura , Junichi Sato
IPC分类号： G11B540
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3133 , G11B5/3163 , G11B5/3166 , G11B5/3173 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： On a wafer-like substrate 1, there are formed a number of thin film magnetic head elements in matrix, each of which is formed to include a first shield film 3 formed on the wafer-like substrate 1, a first insulating film 71 formed on the first shield film, a magnetoresistive element 9 and first and second electrode films 11, 13 connected to respective ends of the magnetoresistive element formed on the first insulating film, a second shield film 5 formed to cover the magnetoresistive element and first and second electrode films 11, 13, a second insulating film 72 formed on the second shield film, and a conductive film 191 electrically connected to the first electrode film 11 and second shield film 5 and having a middle portion which is separated from a side edge of the second shield film 5 by a distance &Dgr;G2 viewed in a film stacking direction. Since the first electrode film 11 and second shield film 5 become equipotential, no voltage is applied across the first and second insulating films 71, 72 and dielectric breakdown does not occur. By cutting the middle portion of the conductive film 191, property of the magnetoresistive element can be measured. Since the middle portion of the conductive film 191 situates outside the second shield film 5, a generation of conductive material debris upon cutting can be prevented, and a cut surface of the first electrode film 11 and second shield film 5 are not short-circuited.
摘要翻译：在晶片状基板1上形成多个矩阵状的薄膜磁头元件，每个薄膜磁头元件形成为包括形成在晶片状基板1上的第一屏蔽膜3，形成在第一绝缘膜71上的第一绝缘膜71 第一屏蔽膜，磁阻元件9和连接到形成在第一绝缘膜上的磁阻元件的各端的第一和第二电极膜11,13，形成为覆盖磁阻元件的第二屏蔽膜5和第一和第二电极膜形成在第二屏蔽膜上的第二绝缘膜72和与第一电极膜11和第二屏蔽膜5电连接并具有与第二屏蔽层的侧边缘分离的中间部分的导电膜191 胶片5在胶片层叠方向上观看距离DeltaG2。由于第一电极膜11和第二屏蔽膜5变为等电位，因此在第一绝缘膜71和第二绝缘膜72之间不施加电压，并且不会发生电介质击穿。通过切割导电膜191的中间部分，可以测量磁阻元件的性质。由于导电膜191的中间部分位于第二屏蔽膜5的外部，因此可以防止在切割时产生导电材料碎屑，并且第一电极膜11和第二屏蔽膜5的切割面不会短路。

3. 发明授权

US08270206B2 Spin high-frequency mixer and method of manufacture thereof 有权
标题翻译：旋转高频混合机及其制造方法
公开(公告)号：US08270206B2
公开(公告)日：2012-09-18
申请号：US12578059
申请日：2009-10-13
申请人： Takashi Asatani
发明人： Takashi Asatani
IPC分类号： G11C11/00
CPC分类号： H03D7/1441 , H03D7/1458 , H03D7/1491 , H03D2200/0084 , H03D2200/009
摘要： A spin high-frequency mixer includes a spin current generator generating a spin current upon input of a local oscillator signal, a TMR device which inputs a high-frequency signal and the spin current and generates a mixed signal, and an output device outputting the generated mixed signal from the TMR device.
摘要翻译：自旋高频混频器包括在本地振荡器信号输入时产生自旋电流的自旋电流发生器，输入高频信号的TMR装置和自旋电流并产生混合信号，以及输出装置来自TMR设备的混合信号。

4. 发明申请

US20080006890A1 Magnetic storage device and method for producing the same 有权
标题翻译：磁存储装置及其制造方法
公开(公告)号：US20080006890A1
公开(公告)日：2008-01-10
申请号：US11810835
申请日：2007-06-06
申请人： Susumu Haratani , Tohru Oikawa , Takashi Asatani
发明人： Susumu Haratani , Tohru Oikawa , Takashi Asatani
IPC分类号： H01L29/82
CPC分类号： H01L27/226 , G11C11/16 , H01L43/08
摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t
摘要翻译：在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。此外，磁阻元件设置在线的附近。假设在软磁体与反铁磁体层之间的界面处的交换耦合能为J（erg / cm 2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），软磁体的矫顽力为Hc（Oe）。然后，软磁体的厚度t（cm）被选择为使得t

5. 发明授权

US08269097B2 Thin film thermoelectric element including stress releasing elements 有权
标题翻译：薄膜热电元件包括应力释放元件
公开(公告)号：US08269097B2
公开(公告)日：2012-09-18
申请号：US11526677
申请日：2006-09-26
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： H01L35/00
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间的应力释放部分，并且包括多个柱状部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

6. 发明授权

US08692104B2 Thermoelectric element 有权
标题翻译：热电元件
公开(公告)号：US08692104B2
公开(公告)日：2014-04-08
申请号：US13588896
申请日：2012-08-17
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： H01L35/32
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间并且包括多个柱状部分的应力释放部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

7. 发明授权

US07692229B2 Magnetic memory including ferromagnetic yoke and antiferromagnetic layer 失效
标题翻译：磁记忆包括铁磁轭和反铁磁层
公开(公告)号：US07692229B2
公开(公告)日：2010-04-06
申请号：US11430630
申请日：2006-05-04
申请人： Susumu Haratani , Takashi Asatani
发明人： Susumu Haratani , Takashi Asatani
IPC分类号： H01L29/94
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.
摘要翻译：在磁存储器1中，磁电阻效应元件4被布置成与用于产生写入磁场的线5相邻，并且进一步地设置铁磁体20以便覆盖线5的至少一部分，并且因此使状态该铁磁体20在一个方向上的磁化强度X。根据本发明，可以在书写过程中使磁特性均匀化并有效地实现书写作业。

8. 发明申请

US20080157062A1 Spin transistor 审中-公开
标题翻译：旋转晶体管
公开(公告)号：US20080157062A1
公开(公告)日：2008-07-03
申请号：US12003032
申请日：2007-12-19
申请人： Takashi Asatani
发明人： Takashi Asatani
IPC分类号： H01L29/12
CPC分类号： H01L29/66984 , H01F10/1936
摘要： A spin transistor 1 is a spin transistor 1 having a source S of a ferromagnetic material, a drain D of a ferromagnetic material, a semiconductor SM on which the source S and the drain D are disposed and which forms a Schottky contact with the source S, and a gate electrode GE disposed through a gate insulating layer GI on the semiconductor SM, wherein a tunnel barrier insulating layer TI constituting a tunnel barrier is interposed between the semiconductor SM and the drain D.
摘要翻译：自旋晶体管1是具有铁磁材料源S，铁磁材料的漏极D，其上设置有源极S和漏极D的半导体SM并且与源极S形成肖特基接触的自旋晶体管1 以及通过半导体SM上的栅极绝缘层GI布置的栅电极GE，其中构成隧道势垒的隧道势垒绝缘层TI插入在半导体SM和漏极D之间。

9. 发明申请

US20070285978A1 Magnetic memory and method of spin injection 审中-公开
标题翻译：磁记忆和自旋注射方法
公开(公告)号：US20070285978A1
公开(公告)日：2007-12-13
申请号：US11727507
申请日：2007-03-27
申请人： Takashi Asatani
发明人： Takashi Asatani
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： According to this spin injection method, since a spin transfer torque assisted by an external magnetic field acts, a magnetization direction can be changed with a small current, and since the magnetization direction of a magnetosensitive layer can be controlled by just reducing the external magnetic field strength in the magnetosensitive layer, the external magnetic field carrying out an initial assist, a precise current control is not required and therefore the magnetization direction of the magnetosensitive layer can be changed by flowing a small current by simple control.
摘要翻译：根据这种自旋注入方法，由于由外部磁场辅助的自旋转移扭矩起作用，磁化方向可以用小电流改变，并且由于可以通过仅仅减小外部磁场来控制磁敏层的磁化方向磁感应层的强度，进行初始辅助的外部磁场，不需要精确的电流控制，因此可以通过简单控制流动小电流来改变磁敏层的磁化方向。

10. 发明申请

US20070068566A1 Thermoelectric element 有权
标题翻译：热电元件
公开(公告)号：US20070068566A1
公开(公告)日：2007-03-29
申请号：US11526677
申请日：2006-09-26
申请人： Takashi Asatani , Fujimi Kimura
发明人： Takashi Asatani , Fujimi Kimura
IPC分类号： H01L35/02
CPC分类号： H01L35/32
摘要： A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.
摘要翻译：热电元件具有高温侧的第一基板，面向第一基板的低温侧的第二基板，经由硅层配置在第二基板上的热电材料，形成在第一基板上的第一电极和形成在硅层上的第二电极。热电元件具有形成在第一电极和热电材料之间并且包括多个柱状部分的应力释放部分。应力释放部分抑制由于在热电元件中产生的应力而可能在热电元件中产生的诸如裂纹的缺陷。

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