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1. 发明授权

US6055255A Semiconductor laser device and method for producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US6055255A
公开(公告)日：2000-04-25
申请号：US790815
申请日：1997-01-30
申请人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
发明人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
IPC分类号： H01S5/06 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0601 , H01S5/0658 , H01S5/2219
摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。层状结构设置在半导体基板上。半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。

2. 发明授权

US5571750A Method for producing a semiconductor laser device 失效
公开(公告)号：US5571750A
公开(公告)日：1996-11-05
申请号：US314585
申请日：1994-09-28
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osumu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

3. 发明授权

US5592502A Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same 失效
标题翻译：半导体激光元件及其调节自身振荡强度的方法
公开(公告)号：US5592502A
公开(公告)日：1997-01-07
申请号：US327452
申请日：1994-10-21
申请人： Mitsuhiro Matsumoto , Ken Ohbayashi
发明人： Mitsuhiro Matsumoto , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/065 , H01S5/068 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/18
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/221 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser element includes: a semiconductor laminated structure for emitting a laser light, including an active layer interposed between a first cladding layer of a first-conductivity type and a second cladding layer of a second-conductivity type, the first cladding layer and the semiconductor layer having lower refractive indices than that of the active layer; and a current light confining means including a stripe-shaped semiconductor layer of the second-conductivity type formed on a surface of the second cladding layer on a side opposite to the active layer, for confining a laser driving current and the laser light in a region of the active layer corresponding to the stripe-shaped semiconductor layer, wherein the refractive index of the first cladding layer is larger than that of the second cladding layer in the semiconductor laminated structure, and the semiconductor laminated structure includes at least one semiconductor layer of the first-conductivity type having a lower refractive index than that of the first cladding layer, disposed between the first cladding layer and the active layer.
摘要翻译：半导体激光元件包括：发射激光的半导体层叠结构，包括介于第一导电类型的第一包层和第二导电类型的第二包层之间的有源层，第一包层和半导体层的折射率低于有源层的折射率; 以及电流限制装置，包括在与有源层相反的一侧形成在第二包层的表面上的第二导电类型的条形半导体层，用于将激光驱动电流和激光限制在区域所述半导体层叠结构中的所述第一包覆层的折射率比所述第二包层的折射率大，所述半导体层叠结构具有至少一个所述半导体层叠结构的半导体层，第一导电型，其具有比第一包层更低的折射率，设置在第一包层和有源层之间。

4. 发明授权

US5413956A Method for producing a semiconductor laser device 失效
标题翻译：半导体激光装置的制造方法
公开(公告)号：US5413956A
公开(公告)日：1995-05-09
申请号：US995064
申请日：1992-12-22
申请人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Ken Ohbayashi , Kazuaki Sasaki , Osamu Yamamoto , Mitsuhiro Matsumoto
IPC分类号： H01S5/02 , H01S5/028 , H01S5/042 , H01S5/16 , H01L21/20
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

5. 发明授权

US6023484A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US6023484A
公开(公告)日：2000-02-08
申请号：US694594
申请日：1996-08-09
申请人： Mitsuhiro Matsumoto , Takahiro Suyama
发明人： Mitsuhiro Matsumoto , Takahiro Suyama
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/30 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/3054
摘要： The semiconductor laser device of the invention includes: an n-type semiconductor and a semiconductor multi-layer structure formed on the n-type semiconductor. The semiconductor multi-layer structure includes: an active layer; an n-type first cladding layer and a p-type second cladding layer which are disposed so as to sandwich the active layer therebetween; an n-type current/light confinement layer having a stripe-shaped groove portion for injecting a current into a selected region of the active layer; and a p-type third cladding layer formed so as to bury the stripe-shaped groove portion of the n-type current/light confinement layer. In the semiconductor laser device, the current/light confinement layer contains Si as a dopant and the n-type first cladding layer contains substantially no Si as a dopant.
摘要翻译：本发明的半导体激光器件包括n型半导体和形成在n型半导体上的半导体多层结构。半导体多层结构包括：有源层; n型第一包层和p型第二包覆层，以将活性层夹在其间; n型电流/光限制层，其具有用于将电流注入到所述有源层的选定区域中的条形槽部; 以及形成为埋入n型电流/光限制层的条形槽部的p型第三覆层。在半导体激光装置中，电流/光限制层含有Si作为掺杂剂，n型第一包层基本上不含Si作为掺杂剂。

6. 发明授权

US5909425A Optical information reproduction apparatus having a semiconductor laser device light source 失效
标题翻译：具有半导体激光装置光源的光信息再生装置
公开(公告)号：US5909425A
公开(公告)日：1999-06-01
申请号：US844278
申请日：1997-04-18
申请人： Takahiro Suyama , Mitsuhiro Matsumoto , Mototaka Taneya
发明人： Takahiro Suyama , Mitsuhiro Matsumoto , Mototaka Taneya
IPC分类号： G11B7/125 , H01S5/00 , H01S5/065 , G11B7/00
CPC分类号： G11B7/127 , H01S5/0658
摘要： An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.
摘要翻译：光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系：TP <（4L / C）和T> TP +（2L / C），其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度，其被定义为各个脉冲波的一部分的宽度，该部分的强度对应于各个脉冲波的峰值强度的10％以上; C是通过空气的光速。

7. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

8. 发明授权

US08897686B2 Fixing device and image forming apparatus 有权
标题翻译：固定装置和成像装置
公开(公告)号：US08897686B2
公开(公告)日：2014-11-25
申请号：US13612284
申请日：2012-09-12
申请人： Mitsuhiro Matsumoto , Hiroyoshi Inoue , Junpei Amano , Nobuyoshi Komatsu , Atsumi Kurita
发明人： Mitsuhiro Matsumoto , Hiroyoshi Inoue , Junpei Amano , Nobuyoshi Komatsu , Atsumi Kurita
IPC分类号： G03G15/20
CPC分类号： G03G15/2053 , G03G2215/2029
摘要： A fixing device includes a heat assembly including an endless belt, a heat source, an attachment member having an attachment surface and first and second side surfaces, and a slide sheet having first and second end portions that are respectively fixed to a first fixing portion at the first side surface and a second fixing portion at the second side surface, the slide sheet having a larger length from the first end portion to the second end portion than a length of a path of the attachment member extending from the first fixing portion to the second fixing portion through the first side surface, the attachment surface, and the second side surface; and a pressure roller that presses the outer surface of the endless belt to the attachment surface.
摘要翻译：一种固定装置，包括一个包括环形带，热源，具有附接表面的附接构件和第一和第二侧表面的热组件，以及具有分别固定到第一固定部分上的第一和第二端部的滑动片所述第一侧表面和所述第二固定部分在所述第二侧表面处，所述滑动片具有从所述第一端部到所述第二端部的长度大于所述附接构件从所述第一固定部延伸到所述第二固定部的路径的长度通过第一侧表面，附接表面和第二侧表面的第二固定部分; 以及将环形带的外表面按压到附接表面的压力辊。

9. 发明授权

US08491335B2 Waterproof connector 有权
标题翻译：防水连接器
公开(公告)号：US08491335B2
公开(公告)日：2013-07-23
申请号：US13259881
申请日：2010-03-23
申请人： Mitsuhiro Matsumoto , Hajime Kato , Yoshiaki Ozaki , Tsuyoshi Mizushima
发明人： Mitsuhiro Matsumoto , Hajime Kato , Yoshiaki Ozaki , Tsuyoshi Mizushima
IPC分类号： H01R13/52
CPC分类号： H01R13/5208 , H01R13/506 , H01R13/58 , H01R2201/26
摘要： There is provided a waterproof connector in which swing of electric wires inside a rear holder can be prevented, and insertion of the rear holder into a connector body can be easily performed with a small force. The waterproof connector includes a connector body 2 having a terminal containing room 21 in which a terminal metal fitting 9 of an electric wire 7 is contained, a waterproof plug 3 which is fitted to the electric wire 7 at a wire withdrawing side 23 of the connector body 2 and assembled to the wire withdrawing side 23 of the connector body 2, and a rear holder 5 which is mounted on the wire withdrawing side 23 of the connector body 2 thereby to prevent drop of the waterproof plug 3 from the connector body 2. The rear holder includes a pair of half bodies which are separated as a first holder body 51 and a second holder body 52, wire containing recesses 53, 54 which contain respective semi-circular portions of the electric wire are respectively formed in the first holder body 51 and the second holder body 52, and the first holder body 51 and the second holder body 52 are individually mounted on the wire withdrawing side 23 of the connector body 2 to be combined together.
摘要翻译：提供了一种防水连接器，其中可以防止后保持器内的电线的摆动，并且能够以较小的力容易地进行后保持器插入连接器主体中。防水连接器包括具有端子容纳室21的连接器主体2，其中容纳有电线7的端子金属配件9;防水插头3，其在连接器的拔线侧23处装配到电线7 主体2并组装到连接器主体2的引线侧23，以及安装在连接器主体2的拔线侧23上的后保持器5，从而防止防水插头3从连接器主体2掉落。后保持器包括一对半体，其被分离为第一保持器主体51和第二保持器主体52，包含凹槽53,54的电线的各自的半圆形部分的电线分别形成在第一保持器主体中 51和第二保持器主体52以及第一保持器主体51和第二保持器主体52分别安装在连接器主体2的引线抽出侧23上以组合在一起。

10. 发明授权

US08430696B2 Connector having improved fitting properties 有权
标题翻译：连接器具有改进的配合性能
公开(公告)号：US08430696B2
公开(公告)日：2013-04-30
申请号：US12991458
申请日：2009-08-21
申请人： Mitsuhiro Matsumoto , Hajime Kato , Suminori Arima , Shinji Ichikawa
发明人： Mitsuhiro Matsumoto , Hajime Kato , Suminori Arima , Shinji Ichikawa
IPC分类号： H01R13/40
CPC分类号： H01R13/4367 , H01R13/426 , H01R13/5205 , H01R13/521
摘要： A connector includes: a terminal fitting which includes a wire connecting portion and an electric contact portion disposed coaxially with the wire connecting portion; a connector housing for fitting to a mating connector; a rear holder which is fitted at an end portion of the connector housing; a terminal accommodating chamber which is provided in the connector housing. The terminal accommodating chamber includes a first accommodating portion for accommodating the wire connecting portion, a second accommodating portion which is continuous with the first accommodating portion to accommodate the electric contact portion, and a stepped surface formed between the first and second accommodating portions. The connector also includes a flange portion which projects from an outer peripheral surface of the wire connecting portion so as to contact the stepped surface, and a sleeve member provided between the flange portion and the rear holder.
摘要翻译：连接器包括：端子接头，其包括电线连接部分和与电线连接部分同轴设置的电接触部分; 用于配合到配合连接器的连接器壳体; 一个后座，其安装在连接器壳体的端部; 设置在连接器壳体中的端子容纳室。端子容纳室包括用于容纳电线连接部分的第一容纳部分，与第一容纳部分连续以容纳电接触部分的第二容纳部分，以及形成在第一和第二容纳部分之间的台阶表面。连接器还包括从电线连接部分的外周表面突出以接触台阶表面的凸缘部分和设置在凸缘部分和后保持器之间的套筒部件。

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