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    • 1. 发明授权
    • Detecting registration marks with a low energy electron beam
    • 用低能电子束检测对准标记
    • US6008060A
    • 1999-12-28
    • US60496
    • 1998-04-15
    • Tai-Hon Philip ChangHoseob Kim
    • Tai-Hon Philip ChangHoseob Kim
    • G03F7/20H01J37/304H01L21/027H01L21/66H01L21/00
    • H01J37/3045H01J2237/30438Y10S438/949Y10S438/975
    • For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.
    • 对于电子束晶片或掩模处理,对准标记电容耦合到衬底上的覆盖抗蚀剂层的顶表面,以在抗蚀剂层的表面上直接在对准标记上形成电压电位。 对准标记直接连接到在引导标记上产生交流电压的电导线,其在抗蚀剂层的表面上电容性地感应。 或者,对准标记本身电容耦合到放置在半导体衬底的底表面上的导电板。 然后将AC电压施加到导电板上,该导电板在对准标记上引起电荷,其然后电容性地在抗蚀剂层的表面上感应电荷。 跨抗蚀剂层表面的电子束扫描产生二次电子。 二次电子具有低能量并且受到在抗蚀剂层表面产生的电压电位的影响。 因此,通过检测由电子束产生的二次电子信号,与周围区域相比,检测抗蚀剂层表面上的电压电位。 因此,通过电子束(例如由电子束微柱产生的低能量电子束)检测对准标记,其不具有足够的能量穿透抗蚀剂层。
    • 2. 发明授权
    • Detecting registration marks with low energy electron beam
    • 用低能电子束检测对准标记
    • US06127738A
    • 2000-10-03
    • US422921
    • 1999-10-21
    • Tai-Hon Philip ChangHoseob Kim
    • Tai-Hon Philip ChangHoseob Kim
    • G03F7/20H01J37/304H01L21/027H01L21/66H01L23/544G01B11/02
    • H01J37/3045H01J2237/30438Y10S438/949Y10S438/975
    • For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.
    • 对于电子束晶片或掩模处理,对准标记电容耦合到衬底上的覆盖抗蚀剂层的顶表面,以在抗蚀剂层的表面上直接在对准标记上形成电压电位。 对准标记直接连接到在引导标记上产生交流电压的电导线,其在抗蚀剂层的表面上电容性地感应。 或者,对准标记本身电容耦合到放置在半导体衬底的底表面上的导电板。 然后将AC电压施加到导电板上,该导电板在对准标记上引起电荷,其然后电容性地在抗蚀剂层的表面上感应电荷。 跨抗蚀剂层表面的电子束扫描产生二次电子。 二次电子具有低能量并且受到在抗蚀剂层表面产生的电压电位的影响。 因此,通过检测由电子束产生的二次电子信号,与周围区域相比,检测抗蚀剂层表面上的电压电位。 因此,通过电子束(例如由电子束微柱产生的低能量电子束)检测对准标记,其不具有足够的能量穿透抗蚀剂层。
    • 10. 发明授权
    • Patterned heat conducting photocathode for electron beam source
    • 用于电子束源的图形导热光电阴极
    • US06376984B1
    • 2002-04-23
    • US09364274
    • 1999-07-29
    • Andres FernandezMarian MankosTai-Hon Philip ChangKim LeeSteven T. Coyle
    • Andres FernandezMarian MankosTai-Hon Philip ChangKim LeeSteven T. Coyle
    • H01J3150
    • B82Y10/00H01J1/34H01J37/073H01J2201/02H01J2237/31779
    • A photocathode emitter as a source of electron beams, having an optically transmissive substrate patterned to define a protrusion, heat conducting material occupying the space surrounding the protrusion, and a photoemitter layer over the protrusion. The photoemitter is positioned on the side of the substrate opposite the surface on which the illumination is incident, and has an irradiation region at the contact with the top of the protrusion patterned on the substrate, and an emission region opposite the irradiation region, these regions being defined by the path of the illumination. The heat conducting material around the protrusion conducts heat away from this focused region of illumination on the photocathode to allow higher currents to be achieved from the photocathode and thus permits higher throughput rates in applications including electron beam lithography. In one version, the photocathode is fabricated using microfabrication techniques, to achieve a small emission spot size.
    • 作为电子束源的光电阴极发射体,具有图案化以限定突起的光学透射基底,占据突起周围的空间的导热材料,以及突出部上的光电发射体层。 光发射器位于与照射入射的表面相对的一侧上,并且具有与在基板上图案化的突起的顶部接触的照射区域和与照射区域相对的发射区域,这些区域 由照明的路径定义。 突起周围的导热材料将热量从该聚焦光照射区域传导到光电阴极上,以允许从光电阴极获得更高的电流,从而在包括电子束光刻的应用中允许较高的生产率。 在一个版本中,使用微细加工技术制造光电阴极,以实现小的发射点尺寸。