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    • 2. 发明授权
    • Microcolumn assembly using laser spot welding
    • 使用激光点焊的微柱组件
    • US06195214B1
    • 2001-02-27
    • US09364822
    • 1999-07-30
    • Lawrence Peter MurayKim Y. LeeStephen A. RishtonHo-Seob KimTai-Hon Philip Chang
    • Lawrence Peter MurayKim Y. LeeStephen A. RishtonHo-Seob KimTai-Hon Philip Chang
    • G02B702
    • H01J37/12H01J9/18H01J2237/1205
    • A method for forming microcolumns in which laser spot welding bonds the multiple layers of an electron beam microcolumn. A silicon microlens is laser spot welded to a glass insulation layer by focusing a laser through the insulation layer onto the silicon microlens. The glass layer is transparent to the laser, allowing all of the energy to be absorbed by the silicon. This causes the silicon to heat, which, in turn, heats the adjacent surface of the glass insulation layer creating a micro-weld between the silicon and glass. The insulation layer includes a portion which protrudes beyond the edge of the first microlens so that when a second microlens is attached to the opposite side of the insulation layer, the second microlens can be laser spot welded to the protruding portion of the insulation layer by focusing a laser through the protruding portion of the insulation layer to heat the second microlens.
    • 一种形成微柱的方法,其中激光点焊结合电子束微柱的多层。 将硅微透镜通过将激光通过绝缘层聚焦到硅微透镜上而被激光点焊到玻璃绝缘层。 玻璃层对于激光是透明的,允许所有的能量被硅吸收。 这导致硅加热,这进而加热玻璃绝缘层的相邻表面,从而在硅和玻璃之间形成微焊缝。 绝缘层包括突出超过第一微透镜的边缘的部分,使得当第二微透镜附着到绝缘层的相对侧时,第二微透镜可以通过聚焦被激光点焊到绝缘层的突出部分 激光穿过绝缘层的突出部分以加热第二微透镜。
    • 8. 发明授权
    • Detecting registration marks with a low energy electron beam
    • 用低能电子束检测对准标记
    • US6008060A
    • 1999-12-28
    • US60496
    • 1998-04-15
    • Tai-Hon Philip ChangHoseob Kim
    • Tai-Hon Philip ChangHoseob Kim
    • G03F7/20H01J37/304H01L21/027H01L21/66H01L21/00
    • H01J37/3045H01J2237/30438Y10S438/949Y10S438/975
    • For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.
    • 对于电子束晶片或掩模处理,对准标记电容耦合到衬底上的覆盖抗蚀剂层的顶表面,以在抗蚀剂层的表面上直接在对准标记上形成电压电位。 对准标记直接连接到在引导标记上产生交流电压的电导线,其在抗蚀剂层的表面上电容性地感应。 或者,对准标记本身电容耦合到放置在半导体衬底的底表面上的导电板。 然后将AC电压施加到导电板上,该导电板在对准标记上引起电荷,其然后电容性地在抗蚀剂层的表面上感应电荷。 跨抗蚀剂层表面的电子束扫描产生二次电子。 二次电子具有低能量并且受到在抗蚀剂层表面产生的电压电位的影响。 因此,通过检测由电子束产生的二次电子信号,与周围区域相比,检测抗蚀剂层表面上的电压电位。 因此,通过电子束(例如由电子束微柱产生的低能量电子束)检测对准标记,其不具有足够的能量穿透抗蚀剂层。
    • 9. 发明授权
    • Detecting registration marks with low energy electron beam
    • 用低能电子束检测对准标记
    • US06127738A
    • 2000-10-03
    • US422921
    • 1999-10-21
    • Tai-Hon Philip ChangHoseob Kim
    • Tai-Hon Philip ChangHoseob Kim
    • G03F7/20H01J37/304H01L21/027H01L21/66H01L23/544G01B11/02
    • H01J37/3045H01J2237/30438Y10S438/949Y10S438/975
    • For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.
    • 对于电子束晶片或掩模处理,对准标记电容耦合到衬底上的覆盖抗蚀剂层的顶表面,以在抗蚀剂层的表面上直接在对准标记上形成电压电位。 对准标记直接连接到在引导标记上产生交流电压的电导线,其在抗蚀剂层的表面上电容性地感应。 或者,对准标记本身电容耦合到放置在半导体衬底的底表面上的导电板。 然后将AC电压施加到导电板上,该导电板在对准标记上引起电荷,其然后电容性地在抗蚀剂层的表面上感应电荷。 跨抗蚀剂层表面的电子束扫描产生二次电子。 二次电子具有低能量并且受到在抗蚀剂层表面产生的电压电位的影响。 因此,通过检测由电子束产生的二次电子信号,与周围区域相比,检测抗蚀剂层表面上的电压电位。 因此,通过电子束(例如由电子束微柱产生的低能量电子束)检测对准标记,其不具有足够的能量穿透抗蚀剂层。