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1. 发明申请

US20070108467A1 Vertical GaN-based light emitting diode 审中-公开
标题翻译：垂直GaN基发光二极管
公开(公告)号：US20070108467A1
公开(公告)日：2007-05-17
申请号：US11599266
申请日：2006-11-15
申请人： Tae Jang , Su Lee , Pil Kang , Tae Kim
发明人： Tae Jang , Su Lee , Pil Kang , Tae Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/22
摘要： A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under the n-type GaN layer, a p-type GaN layer formed under the active layer, a p-electrode formed under the p-type GaN layer and having an uneven profile at a surface which does not come in contact with the p-type GaN layer, a p-type reflective electrode formed along the uneven surface of the p-type electrode, and a support layer formed under the p-type reflective electrode.
摘要翻译：提供垂直的GaN基LED。垂直GaN基LED包括n型接合焊盘，形成在n型接合焊盘下面的n型反射电极，形成在n型反射电极下方的n型透明电极，n型GaN层形成在n型透明电极下面，形成在n型GaN层下面的有源层，在有源层下面形成的p型GaN层，在p型GaN层下面形成的具有不平坦轮廓的p电极在不与p型GaN层接触的表面上形成有沿p型电极的不平坦表面形成的p型反射电极和在p型反射电极下形成的支撑层。

2. 发明申请

US20070114545A1 Vertical gallium-nitride based light emitting diode 审中-公开
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US20070114545A1
公开(公告)日：2007-05-24
申请号：US11602311
申请日：2006-11-21
申请人： Tae Jang , Su Lee
发明人： Tae Jang , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/32 , H01L33/46
摘要： A vertical GaN-based LED includes: an n-type bonding pad; an n-electrode formed under the n-type bonding pad; an n-type transparent electrode formed under the n-electrode; an n-type GaN layer formed under the n-type transparent electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a current blocking layer formed under a predetermined portion of the p-type GaN layer corresponding to a region where the n-electrode is formed, the current blocking layer being formed of distributed Bragg reflector (DBR); a p-electrode formed under the resulting structure where the current blocking layer is formed; and a support layer formed under the p-electrode.
摘要翻译：垂直GaN基LED包括：n型接合焊盘; 形成在n型焊盘下面的n电极; 形成在n电极下面的n型透明电极; 形成在n型透明电极下方的n型GaN层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 电流阻挡层，其形成在对应于形成有n电极的区域的p型GaN层的预定部分之下，电流阻挡层由分布式布拉格反射器（DBR）形成; 在形成电流阻挡层的所得结构下形成的p型电极; 以及形成在p电极下方的支撑层。

3. 发明申请

US20070114552A1 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US20070114552A1
公开(公告)日：2007-05-24
申请号：US11581003
申请日：2006-10-16
申请人： Tae Jang , Su Lee , Seok Choi
发明人： Tae Jang , Su Lee , Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

4. 发明申请

US20080241982A1 Vertical GaN-based LED and method of manufacturing the same 有权
公开(公告)号：US20080241982A1
公开(公告)日：2008-10-02
申请号：US11878503
申请日：2007-07-25
申请人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
发明人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

5. 发明申请

US20060159936A1 Filter for plasma display panel with good re-workability and plasma display panel comprising the same 审中-公开
标题翻译：具有良好的再加工性的等离子体显示面板的过滤器和包括其的等离子体显示面板
公开(公告)号：US20060159936A1
公开(公告)日：2006-07-20
申请号：US11333313
申请日：2006-01-18
申请人： Suk Chang , In Han , Hyun Cho , Hyun Choi , Sang Park , Jung Kim , Su Lee
发明人： Suk Chang , In Han , Hyun Cho , Hyun Choi , Sang Park , Jung Kim , Su Lee
IPC分类号： B32B27/30
CPC分类号： H01J11/44 , H01J11/10 , H01J2211/446 , Y10T428/31663 , Y10T428/31935
摘要： This invention relates to a filter for a plasma display panel having excellent re-workability, durability, and reliability and a plasma display panel including the same. The filter for a plasma display panel of this invention is characterized by including an acrylic pressure-sensitive adhesive composition layer having adhesion after the lapse of a predetermined time period that is at least 1.5 times as great as initial adhesion. Since the inventive filter for a plasma display panel has low initial adhesion, when a defect occurs in a process of attaching the filter for a plasma display panel to an upper glass plate of the panel, a separation process may be easily conducted, and also adhesion increases with the lapse of time, thus exhibiting good durability and reliability without air bubbling and peeling.
摘要翻译：本发明涉及一种具有优异的再加工性，耐久性和可靠性的等离子体显示面板用滤波器和包括该等离子体显示面板的等离子体显示面板。本发明的等离子体显示面板用过滤器的特征在于，在经过预定时间段之后具有至少是初始粘合力的1.5倍的粘合性的丙烯酸系压敏粘合剂组合物层。由于用于等离子体显示面板的本发明的滤光器具有低的初始粘附性，所以当在用于等离子体显示面板的过滤器附着到面板的上部玻璃板的过程中发生缺陷时，可以容易地进行分离过程，并且还附着随着时间的推移而增加，因此在没有气泡和剥离的情况下表现出良好的耐久性和可靠性。

6. 发明申请

US20060159915A1 Acrylic pressure-sensitive adhesive composition with good re-workability 审中-公开
标题翻译：丙烯酸压敏粘合剂组合物具有良好的再加工性
公开(公告)号：US20060159915A1
公开(公告)日：2006-07-20
申请号：US11333319
申请日：2006-01-18
申请人： Suk Chang , In Han , Hyun Cho , Hyun Choi , Sang Park , Jung Kim , Su Lee
发明人： Suk Chang , In Han , Hyun Cho , Hyun Choi , Sang Park , Jung Kim , Su Lee
IPC分类号： B32B27/30 , B32B27/28 , C08L53/00 , C08L83/10 , C08G77/42
CPC分类号： C09J153/00 , C08L71/00 , C08L83/12 , C08L2666/02 , C08L2666/04 , C08L2666/14 , C09J7/385 , C09J133/066 , C09J151/085 , C09J2201/606 , H01J2211/44 , Y10T428/2891
摘要： This invention relates to an acrylic pressure-sensitive adhesive composition, including a) 100 parts by weight of an acrylic copolymer containing a hydroxy group without a carboxyl group; b) 0.01˜10 parts by weight of a cross-linkging agent; and c) 0.01˜5 parts by weight of a polyether modified polydimethylsiloxane copolymer having HLB of 4˜13 and having the structure of Formula 1, and to an adhesive sheet formed thereby. The adhesive composition and adhesive sheet according to this invention may exhibit excellent re-workability, durability, and reliability.
摘要翻译：本发明涉及一种丙烯酸类压敏粘合剂组合物，其包括a）100重量份含有不含羧基的羟基的丙烯酸共聚物; b）0.01〜10重量份的交联剂; 和c）0.01〜5重量份HLB为4〜13，具有式1结构的聚醚改性聚二甲基硅氧烷共聚物和由其形成的粘合片。根据本发明的粘合剂组合物和粘合片可以表现出优异的再加工性，耐久性和可靠性。

7. 发明申请

US20070114564A1 Vertical gallium nitride based light emitting diode 失效
标题翻译：立式氮化镓基发光二极管
公开(公告)号：US20070114564A1
公开(公告)日：2007-05-24
申请号：US11602285
申请日：2006-11-21
申请人： Su Lee , Dong Kim , Seok Choi , Tae Kim
发明人： Su Lee , Dong Kim , Seok Choi , Tae Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译：垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

8. 发明申请

US20060277568A1 Method and system for making compensation for advertising on display device of home appliance 审中-公开
标题翻译：家电显示设备广告补偿方法及系统
公开(公告)号：US20060277568A1
公开(公告)日：2006-12-07
申请号：US11432718
申请日：2006-05-12
申请人： Yong Kim , Eun Kim , Jong Shin , Sun Bae , Ku Son , Yong Kwon , Jae Sim , Su Lee
发明人： Yong Kim , Eun Kim , Jong Shin , Sun Bae , Ku Son , Yong Kwon , Jae Sim , Su Lee
IPC分类号： H04N7/025 , H04N7/10 , G06F13/00 , H04N5/445
CPC分类号： G06Q30/02
摘要： Method for making compensation for advertising on a display device of a home appliance including the steps of displaying a predetermined advertisement data on a display device of the home appliance, producing a display result data on a result of the display of the advertisement data, accumulating electronic cash of a predetermined amount for the user of the home appliance according to the display result data.
摘要翻译：在家用电器的显示装置上进行广告补偿的方法，包括以下步骤：在家用电器的显示装置上显示预定的广告数据，产生关于广告数据的显示结果的显示结果数据，累积电子根据显示结果数据，用于家用电器的用户的预定金额的现金。

9. 发明申请

US20060194356A1 Method for manufacturing multi-wavelength semiconductor laser device 审中-公开
标题翻译：制造多波长半导体激光器件的方法
公开(公告)号：US20060194356A1
公开(公告)日：2006-08-31
申请号：US11238319
申请日：2005-09-29
申请人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
发明人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译：本发明提供一种形成多波长半导体激光器件的方法。该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn（1-xy）P（0≤x≤1,0<= y <= 1）组成的蚀刻停止层）在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后，在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。

10. 发明申请

US20060139533A1 Polarizer for compensation of gravity defect in liquid crystal display device 有权
标题翻译：用于液晶显示装置重力缺陷补偿的偏振器
公开(公告)号：US20060139533A1
公开(公告)日：2006-06-29
申请号：US11289504
申请日：2005-11-30
申请人： Su Lee , Mon Kang
发明人： Su Lee , Mon Kang
IPC分类号： G02F1/1335
CPC分类号： G02F1/13363 , G02F1/133371 , G02F1/133528 , G02F2001/133633 , G02F2202/40 , G02F2413/09
摘要： An LCD device is disclosed, having a polarizer of which a retardation value is variable on regions for compensation of gravity defect caused by an excess liquid crystal at room temperature, wherein the LCD device includes an LCD panel having a normal cell gap region and an abnormal cell gap region; and the polarizer having a compensated retardation value Δnd for the abnormal cell gap region.
摘要翻译：公开了一种LCD装置，其具有在室温下由多余液晶引起的用于补偿重力缺陷的区域上的延迟值可变的偏振器，其中，LCD装置包括具有正常单元间隙区域和异常的LCD面板细胞间隙区域并且偏振器具有针对异常细胞间隙区域的补偿延迟值Deltand。

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