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1. 发明申请

US20070018177A1 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US20070018177A1
公开(公告)日：2007-01-25
申请号：US11490231
申请日：2006-07-21
申请人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
发明人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极。在n电极下形成AlGaN层。在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。在GaN基LED结构下方形成p电极。导电性基板形成在p电极的下方。

2. 发明申请

US20060261367A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060261367A1
公开(公告)日：2006-11-23
申请号：US11435751
申请日：2006-05-18
申请人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
发明人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32
摘要： The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGa1-xN layer, where 0
摘要翻译：本发明提供一种氮化物半导体器件及其制造方法。在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。此外，在本发明的氮化物半导体器件中，其中0

3. 发明申请

US20060273341A1 Vertically-structured gan-based light emitting diode and method of manufacturing the same 有权
标题翻译：垂直结构的基于发光二极管的发光二极管及其制造方法
公开(公告)号：US20060273341A1
公开(公告)日：2006-12-07
申请号：US11430990
申请日：2006-05-10
申请人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
发明人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
摘要翻译：本发明涉及一种垂直构造的GaN基发光二极管的制造方法。制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

4. 发明申请

US20070018187A1 Vertical GaN-based LED and method of manfacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US20070018187A1
公开(公告)日：2007-01-25
申请号：US11490254
申请日：2006-07-21
申请人： Jae Lee , Bang Oh , Hee Choi , Jeong Oh , Seok Choi , Su Lee
发明人： Jae Lee , Bang Oh , Hee Choi , Jeong Oh , Seok Choi , Su Lee
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

5. 发明申请

US20080241982A1 Vertical GaN-based LED and method of manufacturing the same 有权
公开(公告)号：US20080241982A1
公开(公告)日：2008-10-02
申请号：US11878503
申请日：2007-07-25
申请人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
发明人： Jae Lee , Hee Choi , Jeong Oh , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

6. 发明申请

US20070042520A1 Method of manufacturing vertical GaN-based light emitting diode 有权
标题翻译：制造垂直GaN基发光二极管的方法
公开(公告)号：US20070042520A1
公开(公告)日：2007-02-22
申请号：US11503944
申请日：2006-08-15
申请人： Jeong Oh , Jae Lee , Seok Choi
发明人： Jeong Oh , Jae Lee , Seok Choi
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.
摘要翻译：本发明涉及一种制造垂直GaN基LED的方法。该方法包括在基板上形成绝缘图案以限定具有预定尺寸的LED区域; 在除了绝缘图案之外的衬底上依次堆叠n型GaN基半导体层，有源层和p型GaN基半导体层以形成发光结构; 去除绝缘图案以将发光结构分成具有预定尺寸的LED部分; 分别在LED部分上形成p电极; 在p电极上形成结构支撑层; 去除衬底以暴露分开的n型GaN基半导体层; 在暴露的n型GaN基半导体层上形成n电极。

7. 发明申请

US20060054917A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060054917A1
公开(公告)日：2006-03-16
申请号：US10998922
申请日：2004-11-30
申请人： Jae Lee , Jeong Oh , Jin Park
发明人： Jae Lee , Jeong Oh , Jin Park
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

8. 发明申请

US20060070395A1 Refrigerator 审中-公开
标题翻译：冰箱
公开(公告)号：US20060070395A1
公开(公告)日：2006-04-06
申请号：US11143458
申请日：2005-06-03
申请人： Jae Lee , Jae Lee , June Min
发明人： Jae Lee , Jae Lee , June Min
IPC分类号： F25D17/04 , F25D17/06
CPC分类号： F25D17/045 , F25D17/062 , F25D2317/0665 , F25D2317/067 , F25D2500/02
摘要： A refrigerator capable of adjusting a discharge position and a quantity of cold air discharged into the refrigerator. The refrigerator includes an inner panel installed at a rear surface of a storage chamber and having cold air outlets for forming a cooling channel. The refrigerator also includes a variable duct installed at one of the cold air outlets such that the variable duct can move back and forth to vary a length of the cooling channel, and a plurality of cold air distribution holes formed in the variable duct.
摘要翻译：一种能够调节排出位置的冰箱以及排入冰箱的冷气的量。冰箱包括安装在存储室的后表面的内板，并具有用于形成冷却通道的冷气出口。冰箱还包括安装在一个冷气出口处的可变管道，使得可变管道可前后移动以改变冷却通道的长度，以及形成在可变管道中的多个冷气分配孔。

9. 发明申请

US20080036055A1 Semiconductor package and method of making using leadframe having lead locks to secure leads to encapsulant 有权
标题翻译：半导体封装和使用具有引线锁的引线框的方法，以将引线固定到密封剂
公开(公告)号：US20080036055A1
公开(公告)日：2008-02-14
申请号：US11365246
申请日：2006-03-01
申请人： Jae Yee , Young Chung , Jae Lee , Terry Davis , Chung Han , Jae Ku , Jae Kwak , Sang Ryu
发明人： Jae Yee , Young Chung , Jae Lee , Terry Davis , Chung Han , Jae Ku , Jae Kwak , Sang Ryu
IPC分类号： H01L23/495 , H01L21/98
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49541 , H01L23/49548 , H01L23/49551 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/29007 , H01L2224/32014 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/0106 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A lead frame for making a semiconductor package is disclosed. The leadframe's leads include a lead lock provided at a free end of each inner lead that is adapted to increase a bonding force of the inner lead to a resin encapsulate, thereby effectively preventing a separation of the inner lead from occurring in a singulation process involved in the fabrication of the semiconductor package. A semiconductor package fabricated using the lead frame and a fabrication method for the semiconductor package are also disclosed. The lead frame includes a paddle, a plurality of tie bars for supporting the corners of the paddle, a plurality of leads arranged at each of four sides or two facing sides of the paddle in such a fashion that they are spaced apart from an adjacent side of the paddle while extending perpendicularly to the associated side of the paddle, each of the leads having lead separation preventing means adapted to increase a bonding force of the lead to a resin encapsulate subsequently molded to encapsulate the lead frame for fabrication of the semiconductor package, and dam bars for supporting the leads and the tie bars. Additional package embodiments include exposed protrusions extending downward from the leads. The exposed protrusions are irradiated with a laser to remove set resin prior to a solder ball attachment step.
摘要翻译：公开了一种用于制造半导体封装的引线框架。引线框架的引线包括提供在每个内引线的自由端处的引线锁，其适于增加内引线与树脂封装件的结合力，从而有效地防止内引线的分离在所涉及的单个加工过程中发生制造半导体封装。还公开了使用引线框制造的半导体封装和用于半导体封装的制造方法。引线框架包括桨，用于支撑桨的角的多个连杆，多个引线，其布置在桨的四个侧面或两个相对的侧面中，使得它们与相邻侧面间隔开的叶片，同时垂直于桨叶的相关侧延伸，每个引线具有引线分离防止装置，其适于增加引线与随后模制的树脂封装件的结合力，以封装引线框架以制造半导体封装，和用于支撑引线和连接条的阻挡条。另外的封装实施例包括从引线向下延伸的暴露突起。在焊球附着步骤之前，用激光照射暴露的突起以去除固化树脂。

10. 发明申请

US20080014462A1 ORGANIC EL DEVICE 有权
标题翻译：有机EL设备
公开(公告)号：US20080014462A1
公开(公告)日：2008-01-17
申请号：US11861595
申请日：2007-09-26
申请人： Myung KIM , Hyung Oh , Jae Kyung , Sung Kim , Jae Lee , Young Han , Chun Park , Jong Yoon , Sae Park
发明人： Myung KIM , Hyung Oh , Jae Kyung , Sung Kim , Jae Lee , Young Han , Chun Park , Jong Yoon , Sae Park
IPC分类号： B32B9/00
CPC分类号： H01L51/5088 , H01L51/0052 , H01L51/0059 , H01L2251/5346 , Y10S428/917
摘要： An organic EL device is disclosed, which has an organic multilayer between a first electrode and a second electrode, the organic multilayer comprising a hole injection layer formed on the first electrode, and formed of a mixture of at least one selected from organic materials and at least one selected from inorganic materials; a hole transport layer having at least one layer on the hole injection layer; and an emitting layer formed on the hole transport layer.
摘要翻译：公开了一种有机EL器件，其在第一电极和第二电极之间具有有机多层，所述有机层包含在第一电极上形成的空穴注入层，并且由选自有机材料中的至少一种和至少一种选自无机材料; 在空穴注入层上具有至少一层的空穴传输层; 以及形成在空穴传输层上的发光层。

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