专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070114552A1 Vertical gallium-nitride based light emitting diode 有权
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US20070114552A1
公开(公告)日：2007-05-24
申请号：US11581003
申请日：2006-10-16
申请人： Tae Jang , Su Lee , Seok Choi
发明人： Tae Jang , Su Lee , Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译：垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

2. 发明申请

US20070114545A1 Vertical gallium-nitride based light emitting diode 审中-公开
标题翻译：垂直氮化镓基发光二极管
公开(公告)号：US20070114545A1
公开(公告)日：2007-05-24
申请号：US11602311
申请日：2006-11-21
申请人： Tae Jang , Su Lee
发明人： Tae Jang , Su Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/32 , H01L33/46
摘要： A vertical GaN-based LED includes: an n-type bonding pad; an n-electrode formed under the n-type bonding pad; an n-type transparent electrode formed under the n-electrode; an n-type GaN layer formed under the n-type transparent electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a current blocking layer formed under a predetermined portion of the p-type GaN layer corresponding to a region where the n-electrode is formed, the current blocking layer being formed of distributed Bragg reflector (DBR); a p-electrode formed under the resulting structure where the current blocking layer is formed; and a support layer formed under the p-electrode.
摘要翻译：垂直GaN基LED包括：n型接合焊盘; 形成在n型焊盘下面的n电极; 形成在n电极下面的n型透明电极; 形成在n型透明电极下方的n型GaN层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 电流阻挡层，其形成在对应于形成有n电极的区域的p型GaN层的预定部分之下，电流阻挡层由分布式布拉格反射器（DBR）形成; 在形成电流阻挡层的所得结构下形成的p型电极; 以及形成在p电极下方的支撑层。

3. 发明申请

US20070108467A1 Vertical GaN-based light emitting diode 审中-公开
标题翻译：垂直GaN基发光二极管
公开(公告)号：US20070108467A1
公开(公告)日：2007-05-17
申请号：US11599266
申请日：2006-11-15
申请人： Tae Jang , Su Lee , Pil Kang , Tae Kim
发明人： Tae Jang , Su Lee , Pil Kang , Tae Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/22
摘要： A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under the n-type GaN layer, a p-type GaN layer formed under the active layer, a p-electrode formed under the p-type GaN layer and having an uneven profile at a surface which does not come in contact with the p-type GaN layer, a p-type reflective electrode formed along the uneven surface of the p-type electrode, and a support layer formed under the p-type reflective electrode.
摘要翻译：提供垂直的GaN基LED。垂直GaN基LED包括n型接合焊盘，形成在n型接合焊盘下面的n型反射电极，形成在n型反射电极下方的n型透明电极，n型GaN层形成在n型透明电极下面，形成在n型GaN层下面的有源层，在有源层下面形成的p型GaN层，在p型GaN层下面形成的具有不平坦轮廓的p电极在不与p型GaN层接触的表面上形成有沿p型电极的不平坦表面形成的p型反射电极和在p型反射电极下形成的支撑层。

4. 发明申请

US20060056467A1 Multi-wavelength laser diode 失效
标题翻译：多波长激光二极管
公开(公告)号：US20060056467A1
公开(公告)日：2006-03-16
申请号：US10998921
申请日：2004-11-30
申请人： Tae Jang , Hee Choi , Sang Cho , Dong Jeon
发明人： Tae Jang , Hee Choi , Sang Cho , Dong Jeon
IPC分类号： H01S3/10
CPC分类号： H01S5/10 , H01S3/08086 , H01S5/028 , H01S5/20
摘要： The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.
摘要翻译：本发明涉及一种多波长激光二极管，其中振荡结构包括半导体衬底，以及在半导体衬底上依次形成的下包层，有源层和脊。第一金属层形成在包括脊的一端的振荡结构的第一面上，并且由在至少预定波长的第一波长范围内具有高反射率的金属制成。第二金属层形成在第一金属层上，第二金属层由在预定波长的第二波长范围内具有高反射率的金属制成。多波长激光二极管可以改善反射层结构，以在整个可见光范围内实现高反射率。

5. 发明申请

US20060273332A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060273332A1
公开(公告)日：2006-12-07
申请号：US11435892
申请日：2006-05-18
申请人： Pil Kang , Dong Jeon , Bong Yi , Tae Jang
发明人： Pil Kang , Dong Jeon , Bong Yi , Tae Jang
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a transparent electrode that is formed on the p-type nitride semiconductor layer; a p-type bonding electrode that is formed to be connected on the transparent electrode; and an n-type electrode that is formed of a compound containing aluminum or silver and is formed on the n-type nitride semiconductor layer.
摘要翻译：本发明涉及一种氮化物半导体发光器件。氮化物半导体发光器件包括衬底; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成为连接在透明电极上的p型接合电极; 以及由含有铝或银的化合物形成并形成在n型氮化物半导体层上的n型电极。

6. 发明申请

US20070098923A1 Polarizing liquid crystal film and method for manufacturing the same, light guide plate integrated with polarizing liquid crystal film and backlight unit 有权
标题翻译：极化液晶膜及其制造方法，与偏振液晶膜和背光单元集成的导光板
公开(公告)号：US20070098923A1
公开(公告)日：2007-05-03
申请号：US11415131
申请日：2006-05-01
申请人： Seong Choi , Sung Kim , Hun Pak , Tae Jang
发明人： Seong Choi , Sung Kim , Hun Pak , Tae Jang
IPC分类号： G02B5/30
CPC分类号： G02B5/3016 , Y10T428/10 , Y10T428/1005 , Y10T428/1041
摘要： The present invention relates to a polarizing liquid crystal film having no alignment layer and a method for manufacturing the same, a light guide plate integrated with the polarizing liquid crystal film, and a backlight unit. The polarizing liquid crystal film of the present invention includes an adhesive layer, a liquid crystal layer aligned on one side of the adhesive layer, and a protection film arranged on an opposite side of the adhesive layer to protect the liquid crystal layer. Further, the method for manufacturing a polarizing liquid crystal film includes preparing a liquid crystal alignment film, aligning liquid crystal on the liquid crystal alignment film, providing an adhesive layer on the liquid crystal, attaching a protection film protecting the liquid crystal on the adhesive layer, and exfoliating the liquid crystal alignment film. Furthermore, there is provided a light guide plate integrated with the polarizing liquid crystal film and a backlight unit including the same.
摘要翻译：本发明涉及不具有取向层的偏振液晶膜及其制造方法，与偏振液晶膜一体化的导光板和背光单元。本发明的偏振液晶膜包括粘合剂层，在粘合剂层的一侧上排列的液晶层和布置在粘合剂层的相对侧上以保护液晶层的保护膜。此外，制造偏振液晶膜的方法包括制备液晶取向膜，将液晶取向在液晶取向膜上，在液晶上提供粘合剂层，将保护液晶的保护膜附着在粘合剂层上，并使液晶取向膜剥离。此外，提供了一种与偏振液晶膜一体化的导光板和包括该导光板的背光单元。

7. 发明申请

US20070085943A1 Backlight assembly and liquid crystal display having the same 失效
标题翻译：背光组件和具有相同的液晶显示器
公开(公告)号：US20070085943A1
公开(公告)日：2007-04-19
申请号：US11495305
申请日：2006-07-29
申请人： Sung Kang , Seong Choi , Jheen Park , Jeoung Lee , Yong Won , Tae Jang
发明人： Sung Kang , Seong Choi , Jheen Park , Jeoung Lee , Yong Won , Tae Jang
IPC分类号： G02F1/1335
CPC分类号： G02F1/133615 , G02B6/0031 , G02B6/0085
摘要： The present disclosure relates to a liquid crystal display (LCD). There is provided an LCD comprising at least one lamp, a light guide plate for converting light incident from the lamp into a surface light source, an LCD panel disposed above the light guide plate for displaying an image thereon, a first reflection plate disposed below the light guide plate and including an end bent to extend parallel to a surface of the light guide plate such that the reflection plate can surround the lamp installed on the surface of the light guide plate, a mold frame including a space for accommodating the lamp, the light guide plate, the LCD panel and the reflection palate therein and including a portion of a sidewall protruding into the LCD to surround the top of the lamp, and a second reflection plate disposed on a rear surface of a portion of the mold frame arranged above the lamp. Therefore, a thin and lightweight LCD can be obtained and lamp efficiency can also be improved.
摘要翻译：本公开涉及一种液晶显示器（LCD）。提供了一种LCD，包括至少一个灯，用于将从灯入射的光转换成表面光源的导光板，设置在导光板上方用于在其上显示图像的LCD面板，设置在其下方的第一反射板导光板，并且包括弯曲成平行于导光板的表面延伸的端部，使得反射板可以围绕安装在导光板的表面上的灯，包括用于容纳灯的空间的模架，导光板，LCD面板和反射腭，并且包括突出到LCD中的侧壁的一部分以围绕灯的顶部;以及第二反射板，设置在设置在上述模具框架的一部分的后表面上灯。因此，可以获得薄且轻便的LCD，并且还可以提高灯效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式