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1. 发明授权

US5491339A Charged particle detection device and charged particle radiation apparatus 失效
标题翻译：带电粒子检测装置和带电粒子辐射装置
公开(公告)号：US5491339A
公开(公告)日：1996-02-13
申请号：US308420
申请日：1994-09-19
申请人： Tadashi Mitsui , Nozomu Harada , Motosuke Miyoshi , Makoto Sekine , Katsuya Okumura , Haruo Okano
发明人： Tadashi Mitsui , Nozomu Harada , Motosuke Miyoshi , Makoto Sekine , Katsuya Okumura , Haruo Okano
IPC分类号： H01L31/09 , H01J37/244
CPC分类号： H01J37/244
摘要： According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a depletion layer, near a surface of the semiconductor substrate under the electrode, a member for sweeping, into the semiconductor substrate, charges which are generated in the semiconductor substrate by charged particles incident from the electrode and are stored in the potential well, and a member for detecting signal charges generated by the charged particles swept into the semiconductor substrate.
摘要翻译：根据本发明，提供了一种带电粒子检测装置，其包括半导体衬底，形成在半导体衬底上的绝缘膜，形成在绝缘膜上的电极，用于形成势阱的构件，其由耗尽层在电极下方的半导体衬底的表面附近，将从电极入射的带电粒子在半导体衬底中产生的电荷扫描到半导体衬底中并存储在势阱中的元件，以及用于检测由带电粒子产生的信号电荷扫入半导体衬底。

2. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

3. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

4. 发明授权

US5413663A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5413663A
公开(公告)日：1995-05-09
申请号：US74539
申请日：1993-06-11
申请人： Masahiro Shimizu , Takayuki Fukasawa , Yuichiro Yamazaki , Motosuke Miyoshi , Haruo Okano , Katsuya Okumura
发明人： Masahiro Shimizu , Takayuki Fukasawa , Yuichiro Yamazaki , Motosuke Miyoshi , Haruo Okano , Katsuya Okumura
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/3233
摘要： A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber. A sheet-like plasma region having a higher density of ions and a more uniform distribution thereof can be thus formed all over the surface of the wafer.
摘要翻译：晶片等离子体蚀刻装置包括电子发生，加速和处理室。电子从在电子发生室中产生的等离子体中抽出，在加速室中被加速并且作为电子束引入到处理室中。半导体晶片被定位成平行且平行于处理室中的电子引入方向。工艺气体被引入处理室并通过电子束激发成等离子体。通过该等离子体蚀刻晶片。在处理室的入口处形成磁场，使得电子束在水平面被分割成其延伸的中心线的两侧，并在垂直平面中被压扁。磁场也形成为使得电子束在晶片布置在处理室中的位置沿水平方向承载。因此，可以在晶片的整个表面上形成具有较高的离子密度和更均匀分布的片状等离子体区域。

5. 发明授权

US5660744A Plasma generating apparatus and surface processing apparatus 失效
标题翻译：等离子体发生装置和表面处理装置
公开(公告)号：US5660744A
公开(公告)日：1997-08-26
申请号：US492322
申请日：1995-06-19
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.
摘要翻译：表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

6. 发明授权

US5444207A Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field 失效
标题翻译：等离子体产生装置和用于在均匀磁场中处理晶片的表面处理装置和方法
公开(公告)号：US5444207A
公开(公告)日：1995-08-22
申请号：US37169
申请日：1993-03-26
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： B23K10/00 , H01J37/32 , H01L21/00 , H05H1/18
CPC分类号： H01J37/32623 , B23K10/003 , H01J37/3266
摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
摘要翻译：一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

7. 发明授权

US4178396A Method of forming an insulating film 失效
标题翻译：形成绝缘膜的方法
公开(公告)号：US4178396A
公开(公告)日：1979-12-11
申请号：US933844
申请日：1978-08-15
申请人： Haruo Okano , Nozomu Harada , Nobuhisa Kubota
发明人： Haruo Okano , Nozomu Harada , Nobuhisa Kubota
IPC分类号： H01L21/28 , H01L21/283 , H01L21/31 , H01L21/321 , H01L21/339 , H01L21/8247 , H01L29/762 , H01L29/788 , H01L29/792 , H01L21/312 , C03C15/00 , C03C25/06
CPC分类号： H01L29/66954 , H01L21/32105
摘要： A method of forming an insulating film of high breakdown voltage on a polycrystalline substance layer which comprises the steps of preparing the polycrystalline substance layer; selectively removing the polycrystalline substance layer; heat-treating for the first time that portion of the polycrystalline substance layer which is left after said selective removal in an oxidizing atmosphere to provide an oxide layer; removing the whole of said oxide layer; and heat-treating for the second time in an oxidizing atmosphere the polycrystalline substance layer which is now exposed due to removal of said oxide layer, thereby forming a second oxide layer acting as an insulating film on said exposed surface.
摘要翻译：一种在多晶物质层上形成高击穿电压的绝缘膜的方法，包括制备多晶物质层的步骤; 选择性地除去多晶物质层; 首先在氧化气氛中选择性除去之后留下多晶物质层的部分进行热处理以提供氧化物层; 除去整个所述氧化物层; 并且在氧化气氛中第二次热处理由于去除所述氧化物层而现在暴露的多晶物质层，从而在所述暴露表面上形成用作绝缘膜的第二氧化物层。

8. 发明授权

US5888338A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5888338A
公开(公告)日：1999-03-30
申请号：US827439
申请日：1997-03-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极，其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部块。

9. 发明授权

US5620815A Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask 失效
标题翻译：曝光掩模，曝光掩模基板，其制造方法以及基于曝光掩模形成图案的方法
公开(公告)号：US5620815A
公开(公告)日：1997-04-15
申请号：US471782
申请日：1995-06-06
申请人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
发明人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.
摘要翻译：通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案（第一图案）而制成的图案之间具有优异的取向精度的曝光掩模，在其上形成半透明膜或透光膜图案（第二图案），以便包括由遮光部分，半透明部分和透光部分组成的所需尺寸的所有图案，然后去除第一图案的突出部分使用第二种图案作为掩模。半透明膜由至少两层形成，每层均含有共同的元素，因此可以使用相同的装置制造半透明膜，并且当图案化时，可以使用它们进行蚀刻工艺蚀刻剂此外，由于在包括半透明图案的掩模中，至少通过转印光到达晶片的非图案区域的面积起到屏蔽曝光光的作用，可以防止太窄的图案或不充分的焦深。

10. 发明授权

US5236562A Method for discharging hydrogen from a vacuum vessel using a roughing vacuum pump and a turbo-molecular pump 失效
标题翻译：使用粗糙真空泵和涡轮分子泵从真空容器中排出氢的方法
公开(公告)号：US5236562A
公开(公告)日：1993-08-17
申请号：US672237
申请日：1991-03-20
申请人： Katsuya Okumura , Haruo Okano , Manabu Tsujimura , Akio Shibata
发明人： Katsuya Okumura , Haruo Okano , Manabu Tsujimura , Akio Shibata
IPC分类号： B01J3/00 , B01J3/02 , B01J12/00 , B01J19/08 , B01J19/12 , C01B5/00 , C01B7/01 , C01B7/19
CPC分类号： B01J19/123 , B01J12/00 , B01J19/08 , B01J3/006 , C01B5/00 , C01B7/012 , C01B7/191
摘要： A method and apparatus for discharging hydrogen from a vacuum vessel using a roughing vacuum pump and a turbo-molecular pump. During discharge of hydrogen from the vacuum vessel, a material which has excellent reactivity with hydrogen, such as a material which has been excited or ionized by microwave or laser radiation, is introduced into the exhaust system. The material reacts with hydrogen to convert hydrogen into another substance of large molecular weight, whereby the evacuating performance of the vacuum exhaust system is improved with respect to discharging of hydrogen.

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