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1. 发明授权

US5660671A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5660671A
公开(公告)日：1997-08-26
申请号：US266635
申请日：1994-06-28
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：磁控管等离子体处理装置包括：存储蚀刻对象的真空室;设置在真空室中并保持蚀刻对象物的第一电极;与第一电极相对设置并平行于第一电极的第二电极。气体供给单元，其向所述真空室供给蚀刻气体，同时在与所述第一电极相对的所述部分上配置有磁场产生单元，所述电源单元与所述第二电极相对，并且电源单元将功率供给到所述第一或第第二电极并在电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，在第二电极的两端面之间设置有与第二电极相对的平面凹部磁块。

2. 发明授权

US5376211A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5376211A
公开(公告)日：1994-12-27
申请号：US766324
申请日：1991-09-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.
摘要翻译：一种磁控管等离子体处理装置，包括：存储待蚀刻对象物的真空室;设置在真空室内的用于保持物体的第一电极，设置在第一电极的一侧的第二电极，第一电极和第二电极平行彼此相连的气体供给单元向真空室供给蚀刻气体;磁场产生装置，包括设置在第二电极的相对侧的腔室外侧的磁性块，并且能够围绕与该物体保持的物体垂直的轴旋转第一电极和向第一和第二电极之一供电并在这些平行电极之间产生放电的电源单元。磁性块具有设置有彼此极性相反的磁极的端面，此外，在磁极之间设置与第二电极相反的平面凹部。

3. 发明授权

US5888338A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5888338A
公开(公告)日：1999-03-30
申请号：US827439
申请日：1997-03-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极，其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部块。

4. 发明授权

US5439547A Semiconductor manufacturing apparatus with a spare vacuum chamber 失效
标题翻译：具有备用真空室的半导体制造装置
公开(公告)号：US5439547A
公开(公告)日：1995-08-08
申请号：US140887
申请日：1993-10-25
申请人： Hiromi Kumagai
发明人： Hiromi Kumagai
IPC分类号： H01L21/00 , H01L21/677 , C23F1/02
CPC分类号： H01L21/67069 , H01L21/67739 , H01L21/67742 , H01L21/67745 , H01L21/67751 , H01L21/67754 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： In a semiconductor manufacturing apparatus, provided are a vacuum processing chamber which implements a required processing to an object of processing under an atmosphere of reduced pressure, a single spare vacuum processing chamber provided to one side and adjacent to the vacuum processing chamber and provided with a support mechanism to support the object of processing and a conveyor arm to convey the object of processing internally. Thus the object of processing is conveyed to the vacuum processing chamber and conveyed from the vacuum processing chamber via the spare vacuum processing chamber.
摘要翻译：在半导体制造装置中，设置有对减压气氛下的加工对象进行所需处理的真空处理室，设置在一侧并与真空处理室相邻的一个备用真空处理室，支撑机构支撑加工对象和输送臂，以便在内部传送加工对象。因此，处理对象被传送到真空处理室并经由备用真空处理室从真空处理室传送。

5. 发明授权

US4954685A Heating furnace for semiconductor wafers 失效
标题翻译：半导体晶圆加热炉
公开(公告)号：US4954685A
公开(公告)日：1990-09-04
申请号：US223343
申请日：1988-07-25
申请人： Hiromi Kumagai , Kaoru Sato , Yoshio Imai
发明人： Hiromi Kumagai , Kaoru Sato , Yoshio Imai
IPC分类号： C30B25/10 , C30B31/12 , F27D1/00
CPC分类号： C30B25/10 , C30B31/12 , F27D1/0033
摘要： A heating furnace for semiconductor wafers having a heater arranged around a core tube, layers of a heat insulating material made of a porous heat insulating material or ceramic fibers arranged around the heater, and layers of a heat reflecting material arranged in the layers of the heat insulating material.
摘要翻译：一种用于半导体晶片的加热炉，具有围绕芯管布置的加热器，由多孔绝热材料制成的隔热材料层或布置在加热器周围的陶瓷纤维层，以及布置在热层中的热反射材料层绝缘材料。

6. 发明授权

US5332442A Surface processing apparatus 失效
标题翻译：表面处理装置
公开(公告)号：US5332442A
公开(公告)日：1994-07-26
申请号：US973915
申请日：1992-11-12
申请人： Masao Kubodera , Masaki Narushima , Masahito Ozawa , Hiromi Kumagai , Tomihiro Yonenaga , Sumi Tanaka
发明人： Masao Kubodera , Masaki Narushima , Masahito Ozawa , Hiromi Kumagai , Tomihiro Yonenaga , Sumi Tanaka
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/10 , C30B31/20 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45512 , C23C16/4584 , C23C16/481 , C30B25/105 , C30B31/20 , H01L21/67017 , H01L21/67115
摘要： The present invention relates to a surface processing apparatus which performs heating processing of an object of heating which is mounted on a mounting device provided inside a process container, and which includes a plural number of lamps provided so as to oppose a rear surface of a processing surface of an object of processing, a rotating unit which has the plural number of lamps mounted to it in a ring shape, and a drive unit which drives the rotating unit. Also, the present invention relates to a processing apparatus for leading a process gas from a gas supply tube to a gas chamber partitioned inside a process container, and which blows process gas from an outlet of the gas chamber and onto an object of processing which is mounted on a mounting device provided inside the process container, and which includes a plural number of partition plates each provided with a plural number of through holes, being provided at required intervals in a direction of gas flow and inside the gas chamber.
摘要翻译：本发明涉及一种对加热对象进行加热处理的表面处理装置，该加热处理装置安装在设置在处理容器内部的安装装置上，并且包括多个设置成与处理容器的后表面相对的灯处理对象的表面，具有安装在环状的多个灯的旋转单元和驱动旋转单元的驱动单元。本发明还涉及一种处理装置，用于将处理气体从气体供给管引导到在处理容器内分隔的气体室，并且将处理气体从气体室的出口吹送到处理对象物上，安装在设置在处理容器内部的安装装置上，并且包括多个分隔板，每个分隔件设置有多个通孔，沿气流方向和气室内部需要间隔设置。

7. 发明授权

US06247889B1 Multiple-shaft power transmission apparatus and wafer transport arm link 失效
标题翻译：多轴动力传动装置和晶片运输臂连杆
公开(公告)号：US06247889B1
公开(公告)日：2001-06-19
申请号：US09325552
申请日：1999-06-04
申请人： Hiroko Kono , Hiromi Kumagai
发明人： Hiroko Kono , Hiromi Kumagai
IPC分类号： B25J1804
CPC分类号： B25J9/107 , B25J9/126 , H01L21/67739
摘要： The apparatus comprising a partition, a plurality of inner magnetic rings, and a plurality of outer magnetic rings is disclosed. The outer magnetic rings are magnetically coupled to the inner magnetic rings via the partition. The inner magnetic rings comprises a plurality of magnets disposed around a first yoke member. The outer magnetic rings comprise a plurality of magnets disposed around a second yoke member. One or both of the first and second yoke members can be disassembled.
摘要翻译：公开了一种包括隔板，多个内磁环和多个外磁环的装置。外磁环通过隔板与内磁环磁耦合。内磁环包括围绕第一磁轭构件设置的多个磁体。外磁环包括围绕第二磁轭构件设置的多个磁体。第一和第二轭构件中的一个或两个可以拆卸。

8. 发明授权

US5916455A Method and apparatus for generating a low pressure plasma 失效
标题翻译：用于产生低压等离子体的方法和装置
公开(公告)号：US5916455A
公开(公告)日：1999-06-29
申请号：US676831
申请日：1996-07-08
申请人： Hiromi Kumagai
发明人： Hiromi Kumagai
IPC分类号： H01L21/02 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/321 , H01J37/32009
摘要： A low pressure plasma ignition method and apparatus includes an ignition cylinder which passes through an anode of a vacuum chamber, where the outlet of the ignition cylinder forms a nozzle. A coil is arranged around the cylinder and a plasma-generating gas supply pipe passes through an upper part of the cylinder. A plasma-generating gas, such as Argon gas, is supplied to the ignition cylinder in this structure, such that a high density plasma is formed in the ignition cylinder that is expelled into the vacuum chamber while the pressure is reduced through the nozzle. In the vacuum chamber, the expelled plasma becomes a seed plasma, such that a low pressure plasma is readily generated in the vacuum chamber.
摘要翻译：低压等离子体点火方法和装置包括通过真空室的阳极的点火圆筒，点火圆筒的出口形成喷嘴。在圆筒周围配置有线圈，等离子体产生气体供给管穿过气缸的上部。在这种结构中，将诸如氩气的等离子体产生气体供应到点火缸，使得在通过喷嘴减压的同时，在点火缸中形成高密度等离子体，其被排出到真空室中。在真空室中，排出的等离子体成为种子等离子体，使得在真空室中容易产生低压等离子体。

9. 发明授权

US4733632A Wafer feeding apparatus 失效
标题翻译：晶圆送料装置
公开(公告)号：US4733632A
公开(公告)日：1988-03-29
申请号：US911362
申请日：1986-09-25
申请人： Tadahiro Ohmi , Hiromi Kumagai , Yoshiaki Yanagi
发明人： Tadahiro Ohmi , Hiromi Kumagai , Yoshiaki Yanagi
IPC分类号： H01L21/683 , H01L21/687 , B05C13/02
CPC分类号： H01L21/68707 , H01L21/6831
摘要： A wafer feeding apparatus comprises a horizontally movable arm section, an electrostatic chuck mechanism having a vertically movable support member attached to the arm section and moving mechanism for moving the support member, and an electrostatic chuck attached to the support member and having two semi-circular electrodes located in a manner to be electrically isolated from each other and each having a wafer attraction section and an insulating film formed on the wafer attraction section. A direct-current voltage is across the electrodes to electrostatically attract a semiconductor wafer to the wafer attraction sections of the electrodes through the insulating film.
摘要翻译：晶片馈送装置包括水平可动的臂部分，静电吸盘机构，其具有附接到臂部的可垂直移动的支撑构件和用于移动支撑构件的移动机构，以及附接到支撑构件的静电卡盘，并具有两个半圆形电极以彼此电隔离的方式设置，并且每个电极具有形成在晶片吸引部分上的晶片吸引部分和绝缘膜。跨电极的直流电压通过绝缘膜将半导体晶片静电吸引到电极的晶片吸引部分。

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