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1. 发明申请

US20100323469A1 METHODS FOR SEPARATING INDIVIDUAL SEMICONDUCTOR DEVICES FROM A CARRIER 有权
标题翻译：从载体分离个体半导体器件的方法
公开(公告)号：US20100323469A1
公开(公告)日：2010-12-23
申请号：US12487547
申请日：2009-06-18
申请人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
发明人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
IPC分类号： H01L21/302 , H01L31/18 , B32B38/10
CPC分类号： H01L21/78 , H01L21/76898 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911
摘要： A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.
摘要翻译：集成电路的晶片可以使用一层接合材料结合到载体晶片。然后可以使用一系列研磨操作来减小集成电路的晶片的厚度。在研磨之后，可以执行背面处理操作以形成将管芯彼此分离并形成贯通晶片通孔的划线通道。划线通道可以通过干蚀刻形成，并且可以具有矩形，圆形或其它形状。拾取和放置工具可能具有加热头。接合层材料可以基于热塑性材料或其它材料，该材料可以被拾取和放置工具的加热头施加热释放。拾取和放置工具可以单独地从载体晶片剥离每个集成电路，并且可以将分离的电路安装在封装中。

2. 发明授权

US07989266B2 Methods for separating individual semiconductor devices from a carrier 有权
标题翻译：从载体分离各个半导体器件的方法
公开(公告)号：US07989266B2
公开(公告)日：2011-08-02
申请号：US12487547
申请日：2009-06-18
申请人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
发明人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/76898 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911
摘要： A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.
摘要翻译：集成电路的晶片可以使用一层接合材料结合到载体晶片。然后可以使用一系列研磨操作来减小集成电路的晶片的厚度。在研磨之后，可以执行背面处理操作以形成将管芯彼此分离并形成贯通晶片通孔的划线通道。划线通道可以通过干蚀刻形成，并且可以具有矩形，圆形或其它形状。拾取和放置工具可能具有加热头。接合层材料可以基于热塑性材料或其它材料，该材料可以被拾取和放置工具的加热头施加热释放。拾取和放置工具可以单独地从载体晶片剥离每个集成电路，并且可以将分离的电路安装在封装中。

3. 发明申请

US20120194719A1 IMAGE SENSOR UNITS WITH STACKED IMAGE SENSORS AND IMAGE PROCESSORS 审中-公开
标题翻译：具有堆叠图像传感器和图像处理器的图像传感器单元
公开(公告)号：US20120194719A1
公开(公告)日：2012-08-02
申请号：US13080889
申请日：2011-04-06
申请人： Scott Churchwell , Ulrich Boettiger , Swarnal Borthakur , Andrew Perkins , Rick Lake , Marc Sulfridge
发明人： Scott Churchwell , Ulrich Boettiger , Swarnal Borthakur , Andrew Perkins , Rick Lake , Marc Sulfridge
IPC分类号： H04N5/335
CPC分类号： H01L27/14618 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L2224/12105 , H01L2224/131 , H01L2224/221 , H01L2224/24011 , H01L2224/24105 , H01L2224/24146 , H01L2224/82039 , H01L2224/821 , H01L2924/01029 , H01L2924/12043 , H01L2924/014 , H01L2924/00
摘要： An image sensor unit has stacked imager and processor integrated circuits. The imager may have an image sensor pixel array on its front surface. Processor die may be mounted back-to-back with respective imagers on a wafer. A photodefinable dielectric film may cover the rear surface of the wafer. Metal traces in the photodefinable dielectric and through-silicon vias in each imager may be used to interconnect the processing circuitry on the front surface of a processor to the image sensor pixel array on the front surface of the imager. Openings may be formed in the photo definable dielectric to allow solder balls to form electrical connections with the metal traces. A cavity may be formed in a photo definable dielectric layer or an imager to accommodate the processor. The processor may also be mounted in a cavity in a separate silicon standoff structure before attaching the standoff structure to the imager.
摘要翻译：图像传感器单元具有堆叠的成像器和处理器集成电路。成像器在其前表面上可以具有图像传感器像素阵列。处理器管芯可以与晶片上的相应成像器背靠背安装。可光限定的电介质膜可以覆盖晶片的后表面。可以使用每个成像器中的光可定义电介质和穿硅通孔中的金属迹线将处理器前表面上的处理电路与成像器前表面上的图像传感器像素阵列互连。可以在可光电介质中形成开口以允许焊球与金属迹线形成电连接。空腔可以形成在可光定义的介电层或成像器中以容纳处理器。在将间隔结构附接到成像器之前，处理器还可以安装在分离的硅隔离结构中的空腔中。

4. 发明申请

US20110204462A1 METHOD AND APPARATUS PROVIDING AN IMAGER MODULE WITH A PERMANENT CARRIER 有权
标题翻译：用永久载体提供图像模块的方法和装置
公开(公告)号：US20110204462A1
公开(公告)日：2011-08-25
申请号：US13097085
申请日：2011-04-29
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L29/66 , H01L23/48
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

5. 发明授权

US08048708B2 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US08048708B2
公开(公告)日：2011-11-01
申请号：US12213836
申请日：2008-06-25
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

6. 发明申请

US20090321863A1 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US20090321863A1
公开(公告)日：2009-12-31
申请号：US12213836
申请日：2008-06-25
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L21/50 , H01L31/02
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

7. 发明授权

US08680634B2 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US08680634B2
公开(公告)日：2014-03-25
申请号：US13097085
申请日：2011-04-29
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L31/0232
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

8. 发明授权

US08497186B2 Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device 有权
公开(公告)号：US08497186B2
公开(公告)日：2013-07-30
申请号：US13113638
申请日：2011-05-23
申请人： Swarnal Borthakur , Marc Sulfridge
发明人： Swarnal Borthakur , Marc Sulfridge
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L24/05 , H01L24/10 , H01L24/13 , H01L27/14618 , H01L27/14683 , H01L27/1469 , H01L31/02164 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13 , H01L2224/13021 , H01L2224/131 , H01L2924/01029 , H01L2924/12042 , H01L2924/14 , H01L2924/014 , H01L2924/00
摘要： Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.

9. 发明申请

US20110221023A1 SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE 有权
标题翻译：用于在半导体器件上形成图案化辐射阻挡的半导体器件及方法
公开(公告)号：US20110221023A1
公开(公告)日：2011-09-15
申请号：US13113638
申请日：2011-05-23
申请人： Swarnal Borthakur , Marc Sulfridge
发明人： Swarnal Borthakur , Marc Sulfridge
IPC分类号： H01L31/02
CPC分类号： H01L27/14685 , H01L24/05 , H01L24/10 , H01L24/13 , H01L27/14618 , H01L27/14683 , H01L27/1469 , H01L31/02164 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13 , H01L2224/13021 , H01L2224/131 , H01L2924/01029 , H01L2924/12042 , H01L2924/14 , H01L2924/014 , H01L2924/00
摘要： Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
摘要翻译：本文公开了用于半导体器件的半导体器件的形式和形成方法。一个实施例涉及一种用于制造具有芯片的微电子成像器的方法，所述裸片包括图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的电连接器。该方法可以包括用辐射阻挡层覆盖电连接器，并且通过辐射阻挡层上的光致抗蚀剂层形成与电连接器对准的孔。辐射阻挡层不是光反应的，使得其不能使用辐射进行图案化。该方法还包括通过光致抗蚀剂层的孔蚀刻辐射阻挡层中的开口。

10. 发明申请

US20120193744A1 IMAGERS WITH BURIED METAL TRENCHES AND THOUGH-SILICON VIAS 审中-公开
标题翻译：具有金属镀层和透明六面体的成像器
公开(公告)号：US20120193744A1
公开(公告)日：2012-08-02
申请号：US13185366
申请日：2011-07-18
申请人： Swarnal Borthakur , Andrew Perkins , Warren M. Farnworth , Marc Sulfridge
发明人： Swarnal Borthakur , Andrew Perkins , Warren M. Farnworth , Marc Sulfridge
IPC分类号： H01L31/02
CPC分类号： H01L27/14683 , H01L27/14636
摘要： An imaging system may include an imager with frontside components such as imaging pixels and backside components. The backside components may include at least a first redistribution layer having metal trenches and through-silicon vias (TSVs) that couple at least some of the backside components to the frontside components. The metal trenches and through-silicon vias may be formed simultaneously. The through-silicon vias may have a width greater than the width of the metal trenches. The greater width of the through-silicon vias may facilitate forming the through-silicon vias simultaneously with the metal trenches.
摘要翻译：成像系统可以包括具有诸如成像像素和背侧部件的前端部件的成像器。背侧部件可以包括具有金属沟槽的至少第一再分配层和将至少一些后侧部件耦合到前侧部件的穿硅通孔（TSV）。金属沟槽和硅通孔可以同时形成。贯通硅通孔的宽度可以大于金属沟槽的宽度。穿硅通孔的较大宽度可以有助于与金属沟槽同时形成穿硅通孔。

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