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1. 发明申请

US20110204462A1 METHOD AND APPARATUS PROVIDING AN IMAGER MODULE WITH A PERMANENT CARRIER 有权
标题翻译：用永久载体提供图像模块的方法和装置
公开(公告)号：US20110204462A1
公开(公告)日：2011-08-25
申请号：US13097085
申请日：2011-04-29
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L29/66 , H01L23/48
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

2. 发明授权

US08048708B2 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US08048708B2
公开(公告)日：2011-11-01
申请号：US12213836
申请日：2008-06-25
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

3. 发明申请

US20090321863A1 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US20090321863A1
公开(公告)日：2009-12-31
申请号：US12213836
申请日：2008-06-25
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L21/50 , H01L31/02
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

4. 发明授权

US08680634B2 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US08680634B2
公开(公告)日：2014-03-25
申请号：US13097085
申请日：2011-04-29
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L31/0232
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

5. 发明申请

US20100323469A1 METHODS FOR SEPARATING INDIVIDUAL SEMICONDUCTOR DEVICES FROM A CARRIER 有权
标题翻译：从载体分离个体半导体器件的方法
公开(公告)号：US20100323469A1
公开(公告)日：2010-12-23
申请号：US12487547
申请日：2009-06-18
申请人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
发明人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
IPC分类号： H01L21/302 , H01L31/18 , B32B38/10
CPC分类号： H01L21/78 , H01L21/76898 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911
摘要： A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.
摘要翻译：集成电路的晶片可以使用一层接合材料结合到载体晶片。然后可以使用一系列研磨操作来减小集成电路的晶片的厚度。在研磨之后，可以执行背面处理操作以形成将管芯彼此分离并形成贯通晶片通孔的划线通道。划线通道可以通过干蚀刻形成，并且可以具有矩形，圆形或其它形状。拾取和放置工具可能具有加热头。接合层材料可以基于热塑性材料或其它材料，该材料可以被拾取和放置工具的加热头施加热释放。拾取和放置工具可以单独地从载体晶片剥离每个集成电路，并且可以将分离的电路安装在封装中。

6. 发明授权

US07989266B2 Methods for separating individual semiconductor devices from a carrier 有权
标题翻译：从载体分离各个半导体器件的方法
公开(公告)号：US07989266B2
公开(公告)日：2011-08-02
申请号：US12487547
申请日：2009-06-18
申请人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
发明人： Swarnal Borthakur , Andy Perkins , Rick Lake , Marc Sulfridge
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/76898 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911
摘要： A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.
摘要翻译：集成电路的晶片可以使用一层接合材料结合到载体晶片。然后可以使用一系列研磨操作来减小集成电路的晶片的厚度。在研磨之后，可以执行背面处理操作以形成将管芯彼此分离并形成贯通晶片通孔的划线通道。划线通道可以通过干蚀刻形成，并且可以具有矩形，圆形或其它形状。拾取和放置工具可能具有加热头。接合层材料可以基于热塑性材料或其它材料，该材料可以被拾取和放置工具的加热头施加热释放。拾取和放置工具可以单独地从载体晶片剥离每个集成电路，并且可以将分离的电路安装在封装中。

7. 发明申请

US20090047781A1 Methods of Forming Through Substrate Interconnects 有权
标题翻译：通过基板互连形成的方法
公开(公告)号：US20090047781A1
公开(公告)日：2009-02-19
申请号：US11840120
申请日：2007-08-16
申请人： Dave Pratt , Andy Perkins
发明人： Dave Pratt , Andy Perkins
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/02282 , H01L21/76831
摘要： A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
摘要翻译：形成贯穿基板互连的方法包括将通孔形成为半导体基板。通孔延伸到基板的半导体材料中。施加液体电介质以将通孔的侧壁的至少顶部最外部分相对于基底的最初形成通孔的一侧排列。液体电介质在通孔内固化。导电材料形成在固化电介质上的通孔中，并且通过基板互连形成有导电材料。

8. 发明申请

US20120021601A1 Methods of Forming Through Substrate Interconnects 有权
标题翻译：通过基板互连形成的方法
公开(公告)号：US20120021601A1
公开(公告)日：2012-01-26
申请号：US13248970
申请日：2011-09-29
申请人： Dave Pratt , Andy Perkins
发明人： Dave Pratt , Andy Perkins
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L21/02282 , H01L21/76831
摘要： A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
摘要翻译：形成贯穿基板互连的方法包括将通孔形成为半导体基板。通孔延伸到基板的半导体材料中。施加液体电介质以将通孔的侧壁的至少顶部最外部分相对于基底的最初形成通孔的一侧排列。液体电介质在通孔内固化。导电材料形成在固化电介质上的通孔中，并且通过基板互连形成有导电材料。

9. 发明授权

US08629060B2 Methods of forming through substrate interconnects 有权
标题翻译：通过衬底互连形成的方法
公开(公告)号：US08629060B2
公开(公告)日：2014-01-14
申请号：US13248970
申请日：2011-09-29
申请人： Dave Pratt , Andy Perkins
发明人： Dave Pratt , Andy Perkins
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/02282 , H01L21/76831
摘要： A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
摘要翻译：形成贯穿基板互连的方法包括将通孔形成为半导体基板。通孔延伸到基板的半导体材料中。施加液体电介质以将通孔的侧壁的至少顶部最外部分相对于基底的最初形成通孔的一侧排列。液体电介质在通孔内固化。导电材料形成在固化电介质上的通孔中，并且通过基板互连形成有导电材料。

10. 发明授权

US08034702B2 Methods of forming through substrate interconnects 有权
标题翻译：通过衬底互连形成的方法
公开(公告)号：US08034702B2
公开(公告)日：2011-10-11
申请号：US11840120
申请日：2007-08-16
申请人： Dave Pratt , Andy Perkins
发明人： Dave Pratt , Andy Perkins
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/02282 , H01L21/76831
摘要： A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
摘要翻译：形成贯穿基板互连的方法包括将通孔形成为半导体基板。通孔延伸到基板的半导体材料中。施加液体电介质以将通孔的侧壁的至少顶部最外部分相对于基底的最初形成通孔的一侧排列。液体电介质在通孔内固化。导电材料形成在固化电介质上的通孔中，并且通过基板互连形成有导电材料。

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